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Records |
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Author |
Ke, X. |
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Title |
From top-down to bottom-up : from carbon nanotubes to nanodevices |
Type |
Doctoral thesis |
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Year |
2010 |
Publication |
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Abbreviated Journal |
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Volume |
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Pages |
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Keywords |
Doctoral thesis; Electron microscopy for materials research (EMAT) |
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Antwerpen |
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Wos |
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0000-00-00 |
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Additional Links  |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:87408 |
Serial |
1289 |
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Author |
Lisiecki, I.; Turner, S.; Bals, S.; Pileni, M.P.; Van Tendeloo, G. |
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Title |
Enhanced stability against oxidation due to 2D self-organisation of hcp cobalt nanocrystals |
Type |
H1 Book chapter |
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Year |
2008 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
273-274 |
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Keywords |
H1 Book chapter; Electron microscopy for materials research (EMAT) |
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Publisher |
Springer |
Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
978-3-540-85226-1 |
Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:87610 |
Serial |
1055 |
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Author |
d' Hondt, H. |
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Title |
Characterization of anion deficient perovskites |
Type |
Doctoral thesis |
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Year |
2011 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
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Keywords |
Doctoral thesis; Electron microscopy for materials research (EMAT) |
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Place of Publication |
Antwerpen |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Issue |
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Edition |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:87905 |
Serial |
317 |
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Author |
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
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Title |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
107 |
Issue |
2 |
Pages |
024518,1-024518,8 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000274180600122 |
Publication Date |
2010-01-28 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
150 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 2010 IF: 2.079 |
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Call Number |
UA @ lucian @ c:irua:89507 |
Serial |
2146 |
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Author |
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. |
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Title |
Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Journal Of Physical Chemistry C |
Abbreviated Journal |
J Phys Chem C |
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Volume |
114 |
Issue |
5 |
Pages |
6894-6900 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level. |
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Address |
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Corporate Author |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
000276562500002 |
Publication Date |
2010-03-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1932-7447;1932-7455; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
4.536 |
Times cited |
54 |
Open Access |
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Notes |
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Approved |
Most recent IF: 4.536; 2010 IF: 4.524 |
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Call Number |
UA @ lucian @ c:irua:89508 |
Serial |
3757 |
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Author |
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
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Title |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
96 |
Issue |
21 |
Pages |
213514,1-213514,3 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000278183200090 |
Publication Date |
2010-05-28 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
26 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2010 IF: 3.841 |
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Call Number |
UA @ lucian @ c:irua:89509 |
Serial |
2143 |
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Author |
Cao, S. |
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Title |
Quantitative 3D analysis of Ni4Ti3 precipitate morphology and distribution in Ni-Ti by FIB/SEM slice-and-view |
Type |
Doctoral thesis |
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Year |
2010 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
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Keywords |
Doctoral thesis; Electron microscopy for materials research (EMAT) |
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Abstract |
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Place of Publication |
Antwerpen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:89816 |
Serial |
2744 |
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Author |
Bals, S.; Casavola, M.; van Huis, M.A.; Van Aert, S.; Batenburg, K.J.; Van Tendeloo, G.; Vanmaekelbergh, D. |
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Title |
Three-dimensional atomic imaging of colloidal core-shell nanocrystals |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Nano letters |
Abbreviated Journal |
Nano Lett |
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Volume |
11 |
Issue |
8 |
Pages |
3420-3424 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
Colloidal coreshell semiconductor nanocrystals form an important class of optoelectronic materials, in which the exciton wave functions can be tailored by the atomic configuration of the core, the interfacial layers, and the shell. Here, we provide a trustful 3D characterization at the atomic scale of a free-standing PbSe(core)CdSe(shell) nanocrystal by combining electron microscopy and discrete tomography. Our results yield unique insights for understanding the process of cation exchange, which is widely employed in the synthesis of coreshell nanocrystals. The study that we present is generally applicable to the broad range of colloidal heteronanocrystals that currently emerge as a new class of materials with technological importance. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington |
Editor |
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Language |
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Wos |
000293665600062 |
Publication Date |
2011-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1530-6984;1530-6992; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.712 |
Times cited |
121 |
Open Access |
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Notes |
Esteem 026019; Fwo |
Approved |
Most recent IF: 12.712; 2011 IF: 13.198 |
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Call Number |
UA @ lucian @ c:irua:91263 |
Serial |
3643 |
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Author |
Sels, D.; Sorée, B.; Groeseneken, G. |
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Title |
2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
85-88 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Pisa University Press |
Place of Publication |
Pisa |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
14th International Workshop on Computational Electronics |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
978-1-4244-9381-4 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:91699 |
Serial |
6 |
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Author |
Wang, W.-C. |
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Title |
Quantitative analysis of electron exit waves with single atom sensitivity |
Type |
Doctoral thesis |
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Year |
2011 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
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Keywords |
Doctoral thesis; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Antwerpen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:93201 |
Serial |
2745 |
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Author |
Wang, B. |
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Title |
TEM study of plasticity mechanisms in metals : nanocrystalline Al Pd thin films and bulk bcc Nb |
Type |
Doctoral thesis |
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Year |
2011 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
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Keywords |
Doctoral thesis; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Antwerpen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:93202 |
Serial |
3491 |
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Author |
van Huis, M.A.; Figuerola, A.; Fang, C.; Béché, A.; Zandbergen, H.W.; Manna, L. |
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Title |
Letter Chemical transformation of Au-tipped CdS nanorods into AuS/Cd core/shell particles by electron beam irradiation |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Nano letters |
Abbreviated Journal |
Nano Lett |
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Volume |
11 |
Issue |
11 |
Pages |
4555-4561 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
We demonstrate that electron irradiation of colloidal CdS nanorods carrying Au domains causes their evolution into AuS/Cd core/shell nanoparticles as a result of a concurrent chemical and morphological transformation. The shrinkage of the CdS nanorods and the growth of the Cd shell around the Au tips are imaged in real time, while the displacement of S atoms from the CdS nanorod to the Au domains is evidenced by high-sensitivity energy-dispersive X-ray (EDX) spectroscopy. The various nanodomains display different susceptibility to the irradiation, which results in nanoconfigurations that are very different from those obtained after thermal annealing. Such physical manipulations of colloidal nanocrystals can be exploited as a tool to access novel nanocrystal heterostructures. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington |
Editor |
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Language |
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Wos |
000296674700009 |
Publication Date |
2011-10-13 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1530-6984;1530-6992; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.712 |
Times cited |
25 |
Open Access |
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Notes |
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Approved |
Most recent IF: 12.712; 2011 IF: 13.198 |
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Call Number |
UA @ lucian @ c:irua:93710 |
Serial |
1814 |
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Author |
Van Aert, S.; Batenburg, J.; Van Tendeloo, S. |
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Title |
Atomen tellen |
Type |
A3 Journal article |
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Year |
2011 |
Publication |
Nederlands tijdschrift voor natuurkunde (1991) |
Abbreviated Journal |
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Volume |
77 |
Issue |
8 |
Pages |
292-295 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0926-4264 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:94119 |
Serial |
164 |
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Author |
Batenburg, J.; Van Aert, S. |
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Title |
Three-dimensional reconstruction of a nanoparticle at atomic resolution |
Type |
A2 Journal article |
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Year |
2011 |
Publication |
ERCIM news |
Abbreviated Journal |
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Volume |
86 |
Issue |
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Pages |
52 |
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Keywords |
A2 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Le Chesnay |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0926-4981 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94120 |
Serial |
3655 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Van Aert, S. |
|
| |
Title |
Atomen in 3D : Antwerpenaren brengen atomaire structuur nanodeeltjes in beeld |
Type |
Newspaper/Magazine/blog article |
| |
Year |
2011 |
Publication |
Chemie magazine |
Abbreviated Journal |
|
|
| |
Volume |
7 |
Issue |
3 |
Pages |
9 |
|
| |
Keywords |
Newspaper/Magazine/blog article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0379-7651 |
ISBN |
|
Additional Links |
UA library record |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94122 |
Serial |
163 |
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| Permanent link to this record |
| |
|
| |
|
Author |
Schryvers, D.; Van Aert, S. |
|
| |
Title |
High-resolution visualization techniques : structural aspects |
Type |
H1 Book chapter |
| |
Year |
2012 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
135-149 |
|
| |
Keywords |
H1 Book chapter; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Springer |
Place of Publication |
Berlin |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
978-3-642-20942-0 |
Additional Links |
UA library record |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94124 |
Serial |
1464 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gao, J.; Lebedev, O.I.; Turner, S.; Li, Y.F.; Lu, Y.H.; Feng, Y.P.; Boullay, P.; Prellier, W.; Van Tendeloo, G.; Wu, T. |
|
| |
Title |
Phase selection enabled formation of abrupt axial heterojunctions in branched oxide nanowires |
Type |
A1 Journal article |
| |
Year |
2012 |
Publication |
Nano letters |
Abbreviated Journal |
Nano Lett |
|
| |
Volume |
12 |
Issue |
1 |
Pages |
275-280 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
Rational synthesis of nanowires via the vaporliquidsolid (VLS) mechanism with compositional and structural controls is vitally important for fabricating functional nanodevices from bottom up. Here, we show that branched indium tin oxide nanowires can be in situ seeded in vapor transport growth using tailored AuCu alloys as catalyst. Furthermore, we demonstrate that VLS synthesis gives unprecedented freedom to navigate the ternary InSnO phase diagram, and a rare and bulk-unstable cubic phase can be selectively stabilized in nanowires. The stabilized cubic fluorite phase possesses an unusual almost equimolar concentration of In and Sn, forming a defect-free epitaxial interface with the conventional bixbyite phase of tin-doped indium oxide that is the most employed transparent conducting oxide. This rational methodology of selecting phases and making abrupt axial heterojunctions in nanowires presents advantages over the conventional synthesis routes, promising novel composition-modulated nanomaterials. |
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| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Washington |
Editor |
|
|
| |
Language |
|
Wos |
000298943100048 |
Publication Date |
2011-12-05 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1530-6984;1530-6992; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
12.712 |
Times cited |
25 |
Open Access |
|
|
| |
Notes |
Fwo |
Approved |
Most recent IF: 12.712; 2012 IF: 13.025 |
|
| |
Call Number |
UA @ lucian @ c:irua:94209 |
Serial |
2587 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Biermans, E. |
|
| |
Title |
Electron tomography : from qualitative to quantitative |
Type |
Doctoral thesis |
| |
Year |
2012 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
|
|
| |
Keywords |
Doctoral thesis; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Antwerpen |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94220 |
Serial |
989 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Krsmanovic, R.; Bertoni, G.; Van Tendeloo, G. |
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| |
Title |
Structural characterization of erbium doped LAS glass ceramics obtained by glass melting technique |
Type |
A1 Journal article |
| |
Year |
2007 |
Publication |
Materials science forum |
Abbreviated Journal |
|
|
| |
Volume |
555 |
Issue |
|
Pages |
377-381 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
Samples of transparent glass-ceramics in the ternary system Li2O-Al2O3-SiO2 (LAS), with Er2O3 as a luminescent dopant, are investigated. The initial glass is obtained by the classical melting technique. In order to induce ceramization of the glass, TiO2 and ZrO2 are added in small amount as nucleating agents. The thermal treatments at 730 and 770 degrees C are carried out to promote formation of titanium zirconate solid solution precipitates. The spatial distribution of the precipitates in the material, their morphology, and their composition are investigated with TEM, HRTEM, HAADF-STEM, EELS and EFTEM. The results demonstrate that with the glass-melting preparation technique it is possible to achieve small nanoparticles with uniform distribution and higher number density than with the sol-gel glass preparation. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
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| |
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0255-5476 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94673 |
Serial |
3220 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Schryvers, D.; Tirry, W.; Yang, Z. |
|
| |
Title |
Ni4Ti3 precipitates and their influence on the surrounding NiTi matrix |
Type |
P1 Proceeding |
| |
Year |
2005 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
205-220 |
|
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
The properties of the shape memory behaviour of Ni-rich binary NiTi are strongly dependant on the thermal history of the material. In this respect the changing of transformation temperatures of the underlying martensitic transformation and the occurrence of multiple step transformations are the most important phenomena. Part of the explanation is found in the presence of Ni4Ti3 precipitates in the B2 matrix after particular heat treatments. The formation of these precipitates changes the Ni concentration of the matrix and induces a strain field, with both of these aspects expected to be of importance. In this work atomic resolution and analytical TEM (transmission electron microscopy) techniques are used to obtain quantitative information concerning these two main features. Furthermore, the known structure of Ni4Ti3 is refined by a least squares optimization of quantitative electron diffraction data. The high-resolution TEM results show that there are strains up to 2% in the matrix surrounding the precipitates and they gradually increase until a maximum is reached when moving away from the interface. Analytical results reveal a global decrease of Ni content in the matrix when sufficient precipitates are present and a gradient in their close vicinity. The refinement of the structure shows atomic displacements, thereby increasing our understanding of the shrinking of the precipitate lattice with respect to the matrix. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Minerals, Metals Materials Society |
Place of Publication |
Warrendale |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94759 |
Serial |
3549 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
|
| |
Title |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
Type |
A1 Journal article |
| |
Year |
2005 |
Publication |
Springer proceedings in physics |
Abbreviated Journal |
|
|
| |
Volume |
107 |
Issue |
|
Pages |
389-392 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
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| |
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0930-8989 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94775 |
Serial |
3707 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Horvath, Z.E.; Biro, L.P.; Van Tendeloo, G.; Tondeur, C.; Bister, G.; Pierard, N.; Fonseca, A.; Nagy, J.B. |
|
| |
Title |
Optimization of the amount of catalyst and reaction time in single wall nanotube production |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Diffusion and defect data : solid state data : part B : solid state phenomena |
Abbreviated Journal |
Solid State Phenom |
|
| |
Volume |
94 |
Issue |
|
Pages |
271-274 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
The influence of the amount of catalyst and the reaction time on the quantity and quality of catalytically grown single wall carbon nanotubes (SWNT) was investigated. The aim was to optimize some of the SWNT growth parameters using TEM and HRTEM. The thickness of catalyst layer influences the synthesis of the nanotube because the gas composition can differ between top and bottom. Microscopic investigation of the grown SWNT samples showed that the thicker the catalyst layer the lower relative nanotube content, so the deeper parts of the catalyst layer are less effective: The optimum time for the reaction was found to be 10 minutes. This may be understood assuming that nanotube growth needs an initial incubation time while the activity of the catalyst decreases steadily until the nariotube growth stops. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Vaduz |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1012-0394; 1662-9779 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94860 |
Serial |
2490 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Yandouzi, M.; Pauwels, B.; Schryvers, D.; Van Swygenhoven, H.; Van Tendeloo, G. |
|
| |
Title |
Structural characterization of nanostructured Ni3Al processed by inert gas condensation |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Diffusion and defect data : solid state data : part A : defect and diffusion forum |
Abbreviated Journal |
|
|
| |
Volume |
213 |
Issue |
2 |
Pages |
19-30 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
High-resolution transmission electron microscopy was performed on compacted Ni(3)Al nanostructured material prepared by the inert gas condensation technique. From electron diffraction data an incomplete L1(2) ordering of the crystallites is observed in the free particles as well as in the room temperature compacted samples. However, a completely ordered L1(2) structure with much bigger and well-defined crystallites exhibiting several defects is observed in material compacted and annealed at 773 K. Sharp crystallite boundaries as well as amorphous material and voids are observed in between crystallites in all samples, the former being dominant in the annealed material, the latter in the as-prepared one. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
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| |
Publisher |
|
Place of Publication |
Aedermannsdorf |
Editor |
|
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| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1012-0386 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94868 |
Serial |
3221 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
|
| |
Title |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
Type |
P1 Proceeding |
| |
Year |
2002 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
183-194 |
|
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
S.l. |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1-56677-344-X |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94950 |
Serial |
344 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Rosenauer, A.; Gerthsen, D.; Van Aert, S.; van Dyck, D.; den Dekker, A.J. |
|
| |
Title |
Present state of the composition evaluation of ternary semiconductor nanostructures by lattice fringe analysis |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
180 |
Pages |
19-22 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
|
| |
Abstract |
Semiconductor heterostructures are used for the fabrication of optoelectronic devices. Performance of such devices is governed by their chemical morphology. The composition distribution of quantum wells and dots is influenced by kinetic growth processes which are not understood completely at present. To obtain more information about these effects, methods for composition determination with a spatial resolution at a near atomic scale are necessary. In this paper we focus on the present state of the composition evaluation by the lattice fringe analysis (CELFA) technique and explain the basic ideas, optimum imaging conditions, precision and accuracy. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0-7503-0979-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:95118 |
Serial |
2710 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
|
| |
Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
169 |
Pages |
481-484 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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| |
Address |
|
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| |
Corporate Author |
|
Thesis |
|
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| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Weill; Chevalier; Chambon; Tressaud; Darriet; Etourneau; Van Tendeloo, G. |
|
| |
Title |
Electron-microscopy investigation of superconducting la2cu(o, f)4+y oxyfluoride |
Type |
A1 Journal article |
| |
Year |
1993 |
Publication |
European journal of solid state and inorganic chemistry |
Abbreviated Journal |
|
|
| |
Volume |
30 |
Issue |
11 |
Pages |
1095-1108 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
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Abstract |
The fluorination of La2CuO4 can lead to different oxyfluoride compounds depending on the TF2 temperature of the fluorine gas treatment. When 150-degrees-C T(F2) less-than-or-equal-to 200-degrees-c less-than-or-equal-to 200-degrees-C a superconducting material is obtained. Previous neutron diffraction experiments as well as the EXAFS measurements at the La L(III) edge indicate that extra anions lie in an interstitial site between the two (LaO) layers. Electron diffraction patterns clearly show the existence of an incommensurate modulation due to the presence of shear planes. A second phase is also pointed out which can be obtained as a major component when the fluorination temperature is raised to 230-degrees-C. This phase which is not a superconductor crystallizes with the monoclinic symmetry. |
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Publisher |
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Place of Publication |
Paris |
Editor |
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Language |
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Wos |
A1993MX13500006 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0992-4361 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
2 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:95476 |
Serial |
954 |
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Author |
Leon, M.; Merino, J.M.; Van Tendeloo, G. |
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Title |
Structural analysis of CuInSe2, CuInTe2 and CuInSeTe by electron microscopy and X-ray techniques |
Type |
A1 Journal article |
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Year |
2009 |
Publication |
Acta Microscopica |
Abbreviated Journal |
Acta Microsc |
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Volume |
18 |
Issue |
2 |
Pages |
128-138 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A structural research of semiconductor compounds for photovoltaic applications CuInSe(2), CuInTe(2) and CuInSeTe, has been done by x-ray diffraction using the Rietveld analysis of experimental diagrams. Besides, in the CuInSeTe compound the electron diffraction and high resolution microscopy techniques have been used. All the studied compounds were polycrystals with chalcopyrite tetragonal structure, I. 42d. A model for the atomic occupancy in each compound has been proposed, and the results have been compared analyzing the Se-Te substitution effect. |
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Corporate Author |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0798-4545 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.07 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 0.07; 2009 IF: NA |
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Call Number |
UA @ lucian @ c:irua:95679 |
Serial |
3189 |
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| Permanent link to this record |
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Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
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Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
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Volume |
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Issue |
169 |
Pages |
53-56 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
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Thesis |
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Publisher |
IOP Publishing |
Place of Publication |
Bristol |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-7503-0818-4 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
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| Permanent link to this record |
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Author |
Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
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Title |
Quantitative EFTEM study of germanium quantum dots |
Type |
P1 Proceeding |
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Year |
2001 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
345-346 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Rinton Press |
Place of Publication |
Princeton |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1-58949-003-7 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95716 |
Serial |
2753 |
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| Permanent link to this record |
