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Author  |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Buffière, M.; Brammertz, G.; Batuk, M.; Verbist, C.; Mangin, D.; Koble, C.; Hadermann, J.; Meuris, M.; Poortmans, J. |
Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells |
2014 |
Applied physics letters |
105 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Berdiyorov, G.R.; Milošević, M.V.; Peeters, F.M. |
Spatially dependent sensitivity of superconducting meanders as single-photon detectors |
2012 |
Applied physics letters |
100 |
27 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Béché, A.; Goris, B.; Freitag, B.; Verbeeck, J. |
Development of a fast electromagnetic beam blanker for compressed sensing in scanning transmission electron microscopy |
2016 |
Applied physics letters |
108 |
40 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Barbier, M.; Papp, G.; Peeters, F.M. |
Snake states and Klein tunneling in a graphene Hall bar with a pn-junction |
2012 |
Applied physics letters |
100 |
20 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I. |
Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films? |
2001 |
Applied physics letters |
79 |
13 |
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. |
A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
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Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. |
Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures |
2021 |
Applied Physics Letters |
118 |
|
UA library record; WoS full record; WoS citing articles |
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Baelus, B.J.; Peeters, F.M. |
Hall potentiometer in the ballistic regime |
1999 |
Applied physics letters |
74 |
13 |
UA library record; WoS full record; WoS citing articles |
|
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Autrique, D.; Gornushkin, I.; Alexiades, V.; Chen, Z.; Bogaerts, A.; Rethfeld, B. |
Revisiting the interplay between ablation, collisional, and radiative processes during ns-laser ablation |
2013 |
Applied physics letters |
103 |
13 |
UA library record; WoS full record; WoS citing articles |
|
|
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Ao, Z.M.; Peeters, F.M. |
Electric field: A catalyst for hydrogenation of graphene |
2010 |
Applied physics letters |
96 |
88 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Ao, Z.M.; Hernández-Nieves, A.D.; Peeters, F.M.; Li, S. |
Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons |
2010 |
Applied physics letters |
97 |
43 |
UA library record; WoS full record; WoS citing articles |
|
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Amin-Ahmadi, B.; Idrissi, H.; Delmelle, R.; Pardoen, T.; Proost, J.; Schryvers, D. |
High resolution transmission electron microscopy characterization of fcc -> 9R transformation in nanocrystalline palladium films due to hydriding |
2013 |
Applied physics letters |
102 |
14 |
UA library record; WoS full record; WoS citing articles |
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Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
|
|
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Abdullah, H.M.; Van der Donck, M.; Bahlouli, H.; Peeters, F.M.; Van Duppen, B. |
Graphene quantum blisters : a tunable system to confine charge carriers |
2018 |
Applied physics letters |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
|
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Yang, W.; Chang, K.; Wu, X.G.; Zheng, H.Z.; Peeters, F.M.; |
Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport |
2006 |
Applied physics letters |
89 |
10 |
UA library record; WoS full record; WoS citing articles |
|
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Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; |
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors |
2006 |
Applied physics letters |
89 |
15 |
UA library record; WoS full record; WoS citing articles |
|
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Homm, P.; Dillemans, L.; Menghini, M.; Van Bilzen, B.; Bakalov, P.; Su, C.Y.; Lieten, R.; Houssa, M.; Nasr Esfahani, D.; Covaci, L.; Peeters, F.M.; Seo, J.W.; Locquet, J.P.; |
Collapse of the low temperature insulating state in Cr-doped V2O3 thin films |
2015 |
Applied physics letters |
107 |
14 |
UA library record; WoS full record; WoS citing articles |
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Frabboni, S.; Grillo, V.; Gazzadi, G.C.; Balboni, R.; Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Guzzinati, G.; Glas, F.; |
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures |
2012 |
Applied physics letters |
101 |
1 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
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Brück, S.; Paul, M.; Tian, H.; Müller, A.; Kufer, D.; Praetorius, C.; Fauth, K.; Audehm, P.; Goering, E.; Verbeeck, J.; Van Tendeloo, G.; Sing, M.; Claessen, R.; |
Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO |
2012 |
Applied physics letters |
100 |
12 |
UA library record; WoS full record; WoS citing articles |
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Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; |
Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond |
2016 |
Applied physics letters |
109 |
20 |
UA library record; WoS full record; WoS citing articles |
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