Author |
Title |
Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
Publication |
Volume |
Times cited |
Additional Links |
Prabhakara, V.; Nuytten, T.; Bender, H.; Vandervorst, W.; Bals, S.; Verbeeck, J. |
Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy |
2021 |
Optics Express |
29 |
2 |
UA library record; WoS full record; WoS citing articles |
Mehta, A.N.; Gauquelin, N.; Nord, M.; Orekhov, A.; Bender, H.; Cerbu, D.; Verbeeck, J.; Vandervorst, W. |
Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning |
2020 |
Nanotechnology |
31 |
13 |
UA library record; WoS full record; WoS citing articles |
Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. |
A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx |
2020 |
Journal Of Applied Physics |
127 |
|
UA library record; WoS full record; WoS citing articles |
Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. |
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx |
2020 |
Ecs Journal Of Solid State Science And Technology |
9 |
|
UA library record; WoS full record; WoS citing articles |
Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. |
Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation |
2019 |
Journal of applied physics |
125 |
1 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. |
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers |
2019 |
ECS journal of solid state science and technology |
8 |
|
UA library record; WoS full record |
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
Structural characterization of SnS crystals formed by chemical vapour deposition |
2017 |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
268 |
2 |
UA library record; WoS full record; WoS citing articles |
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. |
Thickness dependence of the resistivity of platinum-group metal thin films |
2017 |
Journal of applied physics |
122 |
42 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
Martens, K.; Jeong, J.W.; Aetukuri, N.; Rettner, C.; Shukla, N.; Freeman, E.; Esfahani, D.N.; Peeters, F.M.; Topuria, T.; Rice, P.M.; Volodin, A.; Douhard, B.; Vandervorst, W.; Samant, M.G.; Datta, S.; Parkin, S.S.P. |
Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2) |
2015 |
Physical review letters |
115 |
28 |
UA library record; WoS full record; WoS citing articles |
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
2014 |
Journal of applied physics |
115 |
34 |
UA library record; WoS full record; WoS citing articles |
Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; |
RRAMs based on anionic and cationic switching : a short overview |
2014 |
Physica status solidi: rapid research letters |
8 |
28 |
UA library record; WoS full record; WoS citing articles |
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
Schulze, A.; Hantschel, T.; Dathe, A.; Eyben, P.; Ke, X.; Vandervorst, W. |
Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects |
2012 |
Nanotechnology |
23 |
29 |
UA library record; WoS full record; WoS citing articles |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
Compositional characterization of nickel silicides by HAADF-STEM imaging |
2011 |
Journal of materials science |
46 |
1 |
UA library record; WoS full record; WoS citing articles |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
Characterization of nickel silicides using EELS-based methods |
2010 |
Journal of microscopy |
240 |
11 |
UA library record; WoS full record; WoS citing articles |
Ignatova, V.A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation |
2005 |
Applied physics A : materials science & processing |
81 |
4 |
UA library record; WoS full record; WoS citing articles |
Ignatova, V.A.; Conard, T.; Möller, W.; Vandervorst, W.; Gijbels, R. |
Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study |
2004 |
Applied surface science |
231/232 |
4 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks |
2003 |
Applied surface science |
203 |
15 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; Vandervorst, W.; Gijbels, R. |
Modeling of bombardment induced oxidation of silicon |
2001 |
Journal of applied physics |
89 |
16 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding |
2000 |
Surface and interface analysis |
29 |
4 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces |
2000 |
Journal of the electrochemical society |
147 |
14 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Study of oxynitrides with dual beam TOF-SIMS |
2000 |
|
|
|
UA library record |
de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. |
XPS study of ion induced oxidation of silicon with and without oxygen flooding |
2000 |
|
|
|
UA library record |
Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R. |
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers |
1999 |
Thin solid films : an international journal on the science and technology of thin and thick films |
343/344 |
1 |
UA library record; WoS full record; WoS citing articles |
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution |
1999 |
|
|
|
UA library record; WoS full record; |
de Witte, H.; Vandervorst, W.; Gijbels, R. |
Modeling of bombardment induced oxidation of silicon with and without oxygen flooding |
1998 |
|
|
|
UA library record |