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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Tiwari, S.; Van de Put, M.; Sorée, B.; Hinkle, C.; Vandenberghe, W.G. |
Reduction of magnetic interaction due to clustering in doped transition-metal dichalcogenides : a case study of Mn-, V-, and Fe-doped WSe₂ |
2024 |
ACS applied materials and interfaces |
16 |
|
UA library record; WoS full record; WoS citing articles |
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Deylgat, E.; Chen, E.; Sorée, B.; Vandenberghe, W.G. |
Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials |
2023 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan |
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UA library record; WoS full record |
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Reyntjens, P.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B. |
Ultrascaled graphene-capped interconnects : a quantum mechanical study |
2023 |
Proceedings of the IEEE ... International Interconnect Technology Conference
T2 – IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany |
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UA library record; WoS full record |
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Tiwari, S.; Van de Put, M.L.; Temst, K.; Vandenberghe, W.G.; Sorée, B. |
Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators |
2023 |
Physical review applied |
19 |
|
UA library record; WoS full record; WoS citing articles |
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Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
2022 |
Solid state electronics |
198 |
|
UA library record; WoS full record |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab initio modeling of few-layer dilute magnetic semiconductors |
2021 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX |
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UA library record; WoS full record |
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Tiwari, S.; Vanherck, J.; Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B. |
Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy |
2021 |
Physical review research |
3 |
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UA library record; WoS full record; WoS citing articles |
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Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated platinum diselenide : the impact of platinum vacancies |
2021 |
Materials |
14 |
|
UA library record; WoS full record; WoS citing articles |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers |
2021 |
npj 2D Materials and Applications |
5 |
|
UA library record; WoS full record; WoS citing articles |
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Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Vandenberghe, W.G. |
Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation |
2021 |
Communications Physics |
4 |
|
UA library record; WoS full record; WoS citing articles |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃ and the antiferromagnet FeCl₂ : a detailed first-principles study |
2021 |
Physical Review B |
103 |
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UA library record; WoS full record; WoS citing articles |
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Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Magnetic properties and critical behavior of magnetically intercalated WSe₂ : a theoretical study |
2021 |
2d Materials |
8 |
1 |
UA library record; WoS full record; WoS citing articles |
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Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated Tungsten diselenide |
2020 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 |
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UA library record; WoS full record |
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Moors, K.; Contino, A.; Van de Put, M.L.; Vandenberghe, W.G.; Fischetti, M., V; Magnus, W.; Sorée, B. |
Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness |
2019 |
Physical review materials |
3 |
4 |
UA library record; WoS full record; WoS citing articles |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects |
2019 |
2D materials |
6 |
3 |
UA library record; WoS full record; WoS citing articles |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects |
2018 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX |
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UA library record; WoS full record; WoS citing articles |
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Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Inter-ribbon tunneling in graphene: An atomistic Bardeen approach |
2016 |
Journal of applied physics |
119 |
6 |
UA library record; WoS full record; WoS citing articles |
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Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. |
An envelope function formalism for lattice-matched heterostructures |
2015 |
Physica: B : condensed matter |
470-471 |
5 |
UA library record; WoS full record; WoS citing articles |
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Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. |
Modeling of inter-ribbon tunneling in graphene |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
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UA library record; WoS full record |
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Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
2014 |
Journal of applied physics |
115 |
15 |
UA library record; WoS full record; WoS citing articles |
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Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
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Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
2013 |
Journal of applied physics |
113 |
4 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. |
Figure of merit for and identification of sub-60 mV/decade devices |
2013 |
Applied physics letters |
102 |
64 |
UA library record; WoS full record; WoS citing articles |
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Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a p-n diode silicon nanowire |
2013 |
Solid state electronics |
79 |
2 |
UA library record; WoS full record; WoS citing articles |
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. |
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets |
2012 |
IEEE transactions on electron devices |
59 |
72 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
|
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
|
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
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Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
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