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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. |
A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx |
2020 |
Journal Of Applied Physics |
127 |
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UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. |
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx |
2020 |
Ecs Journal Of Solid State Science And Technology |
9 |
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UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. |
Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation |
2019 |
Journal of applied physics |
125 |
1 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. |
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers |
2019 |
ECS journal of solid state science and technology |
8 |
|
UA library record; WoS full record |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
2017 |
Semiconductor Process Integration 10 |
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UA library record; WoS full record |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
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Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
2002 |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
14 |
3 |
UA library record; WoS full record; WoS citing articles |
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Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
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UA library record; WoS full record; |
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Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R. |
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers |
1999 |
Thin solid films : an international journal on the science and technology of thin and thick films |
343/344 |
1 |
UA library record; WoS full record; WoS citing articles |
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