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Author Goris, B.; Bals, S.; van den Broek, W.; Verbeeck, J.; Van Tendeloo, G. pdf  doi
openurl 
  Title Exploring different inelastic projection mechanisms for electron tomography Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 8 Pages 1262-1267  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Several different projection mechanisms that all make use of inelastically scattered electrons are used for electron tomography. The advantages and the disadvantages of these methods are compared to HAADFSTEM tomography, which is considered as the standard electron tomography technique in materials science. The different inelastic setups used are energy filtered transmission electron microscopy (EFTEM), thickness mapping based on the log-ratio method and bulk plasmon mapping. We present a comparison that can be used to select the best inelastic signal for tomography, depending on different parameters such as the beam stability and nature of the sample. The appropriate signal will obviously also depend on the exact information which is requested.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461100039 Publication Date 2011-03-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 21 Open Access  
  Notes Fwo; Iap; Esteem 026019 Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:91260UA @ admin @ c:irua:91260 Serial 1151  
Permanent link to this record
 

 
Author de Backer, A.; Van Aert, S.; van Dyck, D. pdf  url
doi  openurl
  Title High precision measurements of atom column positions using model-based exit wave reconstruction Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 9/10 Pages 1475-1482  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract In this paper, it has been investigated how to measure atom column positions as accurately and precisely as possible using a focal series of images. In theory, it is expected that the precision would considerably improve using a maximum likelihood estimator based on the full series of focal images. As such, the theoretical lower bound on the variances of the unknown atom column positions can be attained. However, this approach is numerically demanding. Therefore, maximum likelihood estimation has been compared with the results obtained by fitting a model to a reconstructed exit wave rather than to the full series of focal images. Hence, a real space model-based exit wave reconstruction technique based on the channelling theory is introduced. Simulations show that the reconstructed complex exit wave contains the same amount of information concerning the atom column positions as the full series of focal images. Only for thin samples, which act as weak phase objects, this information can be retrieved from the phase of the reconstructed complex exit wave.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461200004 Publication Date 2011-07-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 8 Open Access  
  Notes Fwo Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:91879 Serial 1438  
Permanent link to this record
 

 
Author Verbeeck, J.; Bertoni, G.; Lichte, H. pdf  doi
openurl 
  Title A holographic biprism as a perfect energy filter? Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 7 Pages 887-893  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract It has often been stated that a holographic biprism represents a near perfect energy filter and only elastically scattered electrons can participate in the interference fringes. This is based on the assumption that the reference wave does not contain inelastically scattered electrons. In this letter we show that this is not exactly true because of the delocalised inelastic interaction of the reference wave with the sample. We experimentally and theoretically show that inelastic scattering plays a role in the fringe formation, but it is shown that this contribution is small and can usually be neglected in practice. (C) 2011 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461000021 Publication Date 2011-02-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 13 Open Access  
  Notes Fwo; Esteem 026019 Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:97250UA @ admin @ c:irua:97250 Serial 1482  
Permanent link to this record
 

 
Author Seftel, E.M.; Popovici, E.; Mertens, M.; Van Tendeloo, G.; Cool, P.; Vansant, E. doi  openurl
  Title The influence of the cationic ratio on the incorporation of Ti4+ in the brucite-like sheets of layered double hydroxides Type A1 Journal article
  Year 2008 Publication Microporous and mesoporous materials: zeolites, clays, carbons and related materials Abbreviated Journal Micropor Mesopor Mat  
  Volume (up) 111 Issue 1-3 Pages 12-17  
  Keywords A1 Journal article; Laboratory of adsorption and catalysis (LADCA); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000255847100004 Publication Date 2007-07-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1387-1811; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.615 Times cited 29 Open Access  
  Notes Approved Most recent IF: 3.615; 2008 IF: 2.555  
  Call Number UA @ lucian @ c:irua:69136 Serial 1644  
Permanent link to this record
 

 
Author Wang, A.; Chen, F.R.; Van Aert, S.; van Dyck, D. pdf  doi
openurl 
  Title A method to determine the local surface profile from reconstructed exit waves Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 8 Pages 1352-1359  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Reconstructed exit waves are useful to quantify unknown structure parameters such as the position and composition of the atom columns at atomic scale. Existing techniques provide a complex wave in a flat plane which is close to the plane where the electrons leave the atom columns. However, due to local deviation in the flatness of the exit surface, there will be an offset between the plane of reconstruction and the actual exit of a specific atom column. Using the channelling theory, it has been shown that this defocus offset can in principle be determined atom column-by-atom column. As such, the surface roughness could be quantified at atomic scale. However, the outcome strongly depends on the initial plane of reconstruction especially in a crystalline structure. If this plane is further away from the true exit, the waves of the atom columns become delocalized and interfere mutually which strongly complicates the interpretation of the exit wave in terms of the local structure. In this paper, we will study the delocalization with defocus using the channelling theory in a more systematic way.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461100049 Publication Date 2011-05-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 3 Open Access  
  Notes Fwo Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:88941 Serial 2017  
Permanent link to this record
 

 
Author Heidari Mezerji, H.; van den Broek, W.; Bals, S. pdf  doi
openurl 
  Title A practical method to determine the effective resolution in incoherent experimental electron tomography Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 5 Pages 330-336  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract It is not straightforward to determine resolution for a 3D reconstruction when performing an electron tomography experiment. Different contributions such as missing wedge and misalignment add up and often influence the final resolution in an anisotropic manner. The conventional resolution measures can not be used for all of the reconstruction techniques, especially for iterative techniques which are more commonly used for electron tomography in materials science. Here we define a quantitative resolution measure that determines the resolution in three orthogonal directions of the reconstruction. As an application we use this measure to determine the optimum number of simultaneous iterative reconstruction technique (SIRT) iterations to reconstruct the gold nanoparticles, based on a high angle annular dark field STEM (HAADF-STEM) tilt series.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000289396900005 Publication Date 2011-01-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 26 Open Access  
  Notes Esteem 026019; Fwo Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:87606 Serial 2688  
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Author Salman, O.U.; Finel, A.; Delville, R.; Schryvers, D. pdf  doi
openurl 
  Title The role of phase compatibility in martensite Type A1 Journal article
  Year 2012 Publication Journal of applied physics T2 – 22nd International Symposium on Integrated Functionalities (ISIF), JUN 13-16, 2010, San Juan, PR Abbreviated Journal J Appl Phys  
  Volume (up) 111 Issue 10 Pages 103517  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Shape memory alloys inherit their macroscopic properties from their mesoscale microstructure originated from the martensitic phase transformation. In a cubic to orthorhombic transition, a single variant of martensite can have a compatible (exact) interface with the austenite for some special lattice parameters in contrast to conventional austenite/twinned martensite interface with a transition layer. Experimentally, the phase compatibility results in a dramatic drop in thermal hysteresis and gives rise to very stable functional properties over cycling. Here, we investigate the microstructures observed in Ti50Ni50-xPdx alloys that undergo a cubic to orthorhombic martensitic transformation using a three-dimensional phase field approach. We will show that the simulation results are in very good agreement with transmission electron microscopy observations. However, the understanding of the drop in thermal hysteresis requires the coupling of phase transformation with plastic activity. We will discuss this point within the framework of thermoelasticity, which is a generic feature of the martensitic transformation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712629]  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000305363700053 Publication Date 2012-05-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 11 Open Access  
  Notes Approved Most recent IF: 2.068; 2012 IF: 2.210  
  Call Number UA @ lucian @ c:irua:100310 Serial 2919  
Permanent link to this record
 

 
Author Liang, D.; Follens, L.R.A.; Aerts, A.; Martens, J.A.; Van Tendeloo, G.; Kirschhock, C.E.A. pdf  doi
openurl 
  Title TEM observation of aggregation steps in room-temperature silicalite-1 zeolite formation Type A1 Journal article
  Year 2007 Publication Journal of physical chemistry C Abbreviated Journal J Phys Chem C  
  Volume (up) 111 Issue 39 Pages 14283-14285  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000249838300002 Publication Date 2007-09-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1932-7447; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.536 Times cited 41 Open Access  
  Notes ESA; IWT – Flanders; FWO Approved Most recent IF: 4.536; 2007 IF: NA  
  Call Number UA @ lucian @ c:irua:66617 Serial 3481  
Permanent link to this record
 

 
Author Schattschneider, P.; Verbeeck, J. pdf  url
doi  openurl
  Title Theory of free electron vortices Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 9/10 Pages 1461-1468  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The recent creation of electron vortex beams and their first practical application motivates a better understanding of their properties. Here, we develop the theory of free electron vortices with quantized angular momentum, based on solutions of the Schrödinger equation for cylindrical boundary conditions. The principle of transformation of a plane wave into vortices with quantized angular momentum, their paraxial propagation through round magnetic lenses, and the effect of partial coherence are discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461200002 Publication Date 2011-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 57 Open Access  
  Notes Esteem 026019 Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:91882 Serial 3617  
Permanent link to this record
 

 
Author van den Broek, W.; Van Aert, S.; Goos, P.; van Dyck, D. pdf  doi
openurl 
  Title Throughput maximization of particle radius measurements by balancing size and current of the electron probe Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 7 Pages 940-947  
  Keywords A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT); Vision lab  
  Abstract In thispaperweinvestigatewhichprobesizemaximizesthethroughputwhenmeasuringtheradiusof nanoparticlesinhighangleannulardarkfieldscanningtransmissionelectronmicroscopy(HAADFSTEM). The sizeandthecorrespondingcurrentoftheelectronprobedeterminetheprecisionoftheestimateofa particlesradius.Maximizingthroughputmeansthatamaximumnumberofparticlesshouldbeimaged withinagiventimeframe,sothataprespecifiedprecisionisattained.WeshowthatBayesianstatistical experimentaldesignisaveryusefulapproachtodeterminetheoptimalprobesizeusingacertainamount of priorknowledgeaboutthesample.Thedependenceoftheoptimalprobesizeonthedetectorgeometry and thediameter,variabilityandatomicnumberoftheparticlesisinvestigated.Anexpressionforthe optimalprobesizeintheabsenceofanykindofpriorknowledgeaboutthespecimenisderivedaswell.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461000026 Publication Date 2010-11-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:89657 Serial 3659  
Permanent link to this record
 

 
Author Lubk, A.; Guzzinati, G.; Börrnert, F.; Verbeeck, J. url  doi
openurl 
  Title Transport of intensity phase retrieval of arbitrary wave fields including vortices Type A1 Journal article
  Year 2013 Publication Physical review letters Abbreviated Journal Phys Rev Lett  
  Volume (up) 111 Issue 17 Pages 173902-173905  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The phase problem can be considered as one of the cornerstones of quantum mechanics intimately connected to the detection process and the uncertainty relation. The latter impose fundamental limits on the manifold phase reconstruction schemes invented to date, in particular, at small magnitudes of the quantum wave. Here, we show that a rigorous solution of the transport of intensity reconstruction (TIE) scheme in terms of a linear elliptic partial differential equation for the phase provides reconstructions even in the presence of wave zeros if particular boundary conditions are given. We furthermore discuss how partial coherence hampers phase reconstruction and show that a modified version of the TIE reconstructs the curl-free current density at arbitrary (in)coherence. Our results open the way for TIE-based phase retrieval of arbitrary wave fields, eventually containing zeros such as phase vortices.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000326148400006 Publication Date 2013-10-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9007;1079-7114; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 8.462 Times cited 40 Open Access  
  Notes Esteem2; Vortex; esteem2ta ECASJO; Approved Most recent IF: 8.462; 2013 IF: 7.728  
  Call Number UA @ lucian @ c:irua:111093 Serial 3726  
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Author Amin-Ahmadi, B.; Connétable, D.; Fivel, M.; Tanguy, D.; Delmelle, R.; Turner, S.; Malet, L.; Godet, S.; Pardoen, T.; Proost, J.; Schryvers, D.; Idrissi, H. pdf  url
doi  openurl
  Title Dislocation/hydrogen interaction mechanisms in hydrided nanocrystalline palladium films Type A1 Journal article
  Year 2016 Publication Acta materialia Abbreviated Journal Acta Mater  
  Volume (up) 111 Issue 111 Pages 253-261  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The nanoscale plasticity mechanisms activated during hydriding cycles in sputtered nanocrystalline Pd films have been investigated ex-situ using advanced transmission electron microscopy techniques. The internal stress developing within the films during hydriding has been monitored in-situ. Results showed that in Pd films hydrided to β-phase, local plasticity was mainly controlled by dislocation activity in spite of the small grain size. Changes of the grain size distribution and the crystallographic texture have not been observed. In contrast, significant microstructural changes were not observed in Pd films hydrided to α-phase. Moreover, the effect of hydrogen loading on the nature and density of dislocations has been investigated using aberration-corrected TEM. Surprisingly, a high density of shear type stacking faults has been observed after dehydriding, indicating a significant effect of hydrogen on the nucleation energy barriers of Shockley partial dislocations. Ab-initio calculations of the effect of hydrogen on the intrinsic stable and unstable stacking fault energies of palladium confirm the experimental observations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000375812100027 Publication Date 2016-04-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6454 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.301 Times cited 14 Open Access  
  Notes This work was carried out in the framework of the IAP program of the Belgian State Federal Office for Scientific, Technical and Cultural Affairs, under Contract No. P7/21. The support of the FWO research project G012012N “Understanding nanocrystalline mechanical behaviour from structural investigations” for B. Amin-Ahmadi is also gratefully acknowledged. This work was granted access to the HPC resources of CALMIP (CICT Toulouse, France) under the allocations 2014-p0912 and 2014-p0749. Approved Most recent IF: 5.301  
  Call Number c:irua:132678 Serial 4054  
Permanent link to this record
 

 
Author Lemoine, G.; Delannay, L.; Idrissi, H.; Colla, M.-S.; Pardoen, T. pdf  doi
openurl 
  Title Dislocation and back stress dominated viscoplasticity in freestanding sub-micron Pd films Type A1 Journal article
  Year 2016 Publication Acta materialia Abbreviated Journal Acta Mater  
  Volume (up) 111 Issue 111 Pages 10-21  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract A dislocation-based crystal plasticity model is developed in order to study the mechanical and creep/ relaxation behaviour of polycrystalline metallic thin films. The model accounts for the confinement of plasticity due to grain boundaries and for the anisotropy of individual grains, as well as for the significant viscoplastic effects associated to dislocation dominated thermally activated mechanisms. Numerical predictions are assessed based on experimental tensile test followed by relaxation on freestanding Pd films, based on an on-chip test technique. The dislocation-based mechanism assumption captures all the experimental trends, including the stress strain response, the relaxation behaviour and the dislocation density evolution, confirming the dominance of a dislocation driven deformation mechanism for the present Pd films with high defects density. The model has also been used to address some original experimental evidences involving back stresses, Bauschinger effect, backward creep and strain recovery. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000375812100002 Publication Date 2016-03-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6454 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.301 Times cited 6 Open Access  
  Notes Approved Most recent IF: 5.301  
  Call Number UA @ lucian @ c:irua:133636 Serial 4162  
Permanent link to this record
 

 
Author Béché, A.; Rouvière, J.L.; Barnes, J.P.; Cooper, D. doi  openurl
  Title Dark field electron holography for strain measurement Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 111 Issue 3 Pages 227-238  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Dark field electron holography is a new TEM-based technique for measuring strain with nanometer scale resolution. Here we present the procedure to align a transmission electron microscope and obtain dark field holograms as well as the theoretical background necessary to reconstruct strain maps from holograms. A series of experimental parameters such as biprism voltage, sample thickness, exposure time, tilt angle and choice of diffracted beam are then investigated on a silicon-germanium layer epitaxially embedded in a silicon matrix in order to obtain optimal dark field holograms over a large field of view with good spatial resolution and strain sensitivity.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000288638200007 Publication Date 2010-12-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 31 Open Access  
  Notes Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:136368 Serial 4496  
Permanent link to this record
 

 
Author Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M. doi  openurl
  Title Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs Type A1 Journal article
  Year 2017 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume (up) 111 Issue 4 Pages 041901  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000406779700008 Publication Date 2017-07-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 78 Open Access Not_Open_Access  
  Notes ; The authors are grateful to Professor Michael Uren and Dr. Roland B. Simon (University of Bristol) for helpful discussions and to Dr. Sien Drijkoningen (Hasselt University) for taking the SEM micrographs. This work was in part supported by DARPA under Contract No. FA8650-15-C-7517, monitored by Dr. Avram Bar Cohen and Dr. John Blevins, and supported by Dr. Joseph Maurer and Dr. Abirami Sivananthan. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of DARPA. Y.Z. acknowledges China Scholarship Council for the financial support. S.K. and J.V. acknowledge the FWO-Vlaanderen for financial support under contract G.0044.13N “Charge ordering.” ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:145203 Serial 4728  
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Author Schryvers, D.; Potapov, P. doi  openurl
  Title Electron diffraction refinement of the TiNi(Fe) R-phase structure Type A1 Journal article
  Year 2003 Publication Journal de physique Abbreviated Journal J Phys Iv  
  Volume (up) 112 Issue Pages 751-754  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000186503400030 Publication Date 2008-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48389 Serial 922  
Permanent link to this record
 

 
Author Burriel, M.; Santiso, J.; Rossell, M.D.; Van Tendeloo, G.; Figueras, A.; Garcia, G. pdf  doi
openurl 
  Title Enhancing total conductivity of La2NiO4+\delta epitaxial thin films by reducing thickness Type A1 Journal article
  Year 2008 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C  
  Volume (up) 112 Issue 29 Pages 10982-10987  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High quality epitaxial c axis oriented La2NiO4+ä thin films have been prepared by the pulsed injection metal organic chemical vapor deposition technique on different substrates. High-resolution electron microscopy/transmission electron microscopy has been used to confirm the high crystalline quality of the deposited films. The c-parameter evolution has been studied by XRD as a function of time and gas atmosphere. The high temperature transport properties along the basal a−b plane of epitaxial La2NiO4+ä films have been measured, and the total conductivity of the layers has been found to increase as the thickness is reduced. Layers of 50 nm and thinner have shown a maximum conductivity larger than that measured for single-crystals, in particular, the 33 nm thick films with a conductivity of 475 S/cm in oxygen correspond to the highest value measured to date for this material.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000257724100057 Publication Date 2008-06-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.536 Times cited 35 Open Access  
  Notes Approved Most recent IF: 4.536; 2008 IF: 3.396  
  Call Number UA @ lucian @ c:irua:76440 Serial 1067  
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Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. openurl 
  Title Ion beam synthesis of β-SiC at 9500C and structural characterization Type A3 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal  
  Volume (up) B112 Issue Pages 325-329  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-5087 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15454 Serial 1740  
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. doi  openurl
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B  
  Volume (up) 112 Issue 1-4 Pages 325-329  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100069 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95886 Serial 1742  
Permanent link to this record
 

 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. doi  openurl
  Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B  
  Volume (up) B112 Issue Pages 133-138  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15453 Serial 2423  
Permanent link to this record
 

 
Author Somsen, C.; Wassermann, E.F.; Kästner, J.; Schryvers, D. doi  openurl
  Title Precursor phenomena in a quenched and aged Ni52Ti48 shape memory alloy Type A1 Journal article
  Year 2003 Publication Journal de physique: 4 T2 – 10th International Conference on Martensitic Transformations, JUN 10-14, 2002, ESPOO, FINLAND Abbreviated Journal J Phys Iv  
  Volume (up) 112 Issue Part 2 Pages 777-780  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We measured the electrical resistivity R(T) and specific heat C-p(T) between room temperature (RT) and 4.2 K as well as the microstructure by transmission electron microscopy (TEM) of a Ni-52 Ti-48 SMA quenched from 1000degreesC (B2-Phase range) to RT and then annealed for 1h at T=380degreesC, 550degreesC and 650degreesC. In the “as quenched” and the “650degreesC annealed” state no martensitic transformations (MT's) occur. The diffraction patterns show faint reflections originating from coherent Ni4Ti3 precipitates in an early state of formation. Additional reflections of the type 1/2 <110>, 1/2 <111> and 1/3 <110> result from various lattice displacement waves, which are precursors of the MT's to the B19' and R-phase, respectively. Indeed, high resolution TEM micrographs of the [001] zone of the “as quenched” sample reveal transverse 1/2 <110> <110> lattice displacement waves, precursors of the B19' martensite. The coherent Ni4Ti3 precipitates, homogeneously distributed on a small length scale, binder the MT's in the “as quenched” and the “650degreesC annealed” state, and thus only the precursors appear. When annealed at T=380degreesC, however, coherent Ni4Ti3 precipitates with a length of 10nm are clearly visible in TEM. These precipitates trigger the NIT from the B2 to the R-phase on cooling, as evidenced also by anomalies in R(T) and C-p(T). Annealing at T-550degreesC leads to the well known two step MT's from the B2 to the R-phase and then into the B19'-phase. These martensitic transitions are clearly seen as additional peaks in the specific heat and anomalies in the resistance, while the “as quenched” and 650degreesC annealed samples show weak features in R(T) and C-p(T).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos 000186503400036 Publication Date 2008-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102791 Serial 2694  
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Author Van Tendeloo, G.; Domengès, B.; Caldes, M.T.; Hervieu, M.; Raveau, B. openurl 
  Title Structural aspects of Li-doped tubular bismuth cuprates (Bi2Sr3Cu2-xLixOy): an electron microscopy study Type A1 Journal article
  Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume (up) 112 Issue Pages 161-169  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1994PG30500027 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor 2.133 Times cited Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:10033 Serial 3208  
Permanent link to this record
 

 
Author Hervieu, M.; Pelloquin, D.; Michel, C.; Van Tendeloo, G.; Raveau, B. openurl 
  Title Structural characteristics of the 40K superconductor Bi2Sr5Cu3(CO3)2O10: a HREM study Type A1 Journal article
  Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume (up) 112 Issue Pages 139-147  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1994PG30500024 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.133 Times cited 5 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:10034 Serial 3216  
Permanent link to this record
 

 
Author Ball, J.M.; Schryvers, D. doi  openurl
  Title The analysis of macrotwins in NiAl martensite Type A1 Journal article
  Year 2003 Publication Journal de physique: 4 T2 – 10th International Conference on Martensitic Transformations, JUN 10-14, 2002, ESPOO, FINLAND Abbreviated Journal J Phys Iv  
  Volume (up) 112 Issue Part 1 Pages 159-162  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We present a theoretical study of macrotwins arising in cubic to tetragonal martensitic transformations. The results help to explain some features of such macrotwins observed in Ni65Al35.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos 000186503200024 Publication Date 2008-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 11 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103275 Serial 3569  
Permanent link to this record
 

 
Author Ji, G.; Tan, Z.; Lu, Y.; Schryvers, D.; Li, Z.; Zhang, D. pdf  url
doi  openurl
  Title Heterogeneous interfacial chemical nature and bonds in a W-coated diamond/Al composite Type A1 Journal article
  Year 2016 Publication Materials characterization Abbreviated Journal Mater Charact  
  Volume (up) 112 Issue 112 Pages 129-133  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Heterogeneous Al/Al4C3/Al2O3/diamond{111}, Al/nanolayered Al4C3/diamond{111} and Al12W particle/Al4C3/Al2O3/diamond{111} multi-interfaces have been developed at the nanoscale in a W-coated diamond/Al composite produced by vacuum hot pressing. The formation of nanoscale Al4C3 crystals is strongly associated with local O enrichment and can be further promoted by Al12W interfacial particles. The latter effectively contributes to enhance interfacial chemical bonding reducing interfacial thermal resistance and, in turn, enhancing thermal conductivity.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000370109200015 Publication Date 2015-12-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1044-5803 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.714 Times cited 7 Open Access  
  Notes This work is financially supported by the FWO project of Belgium (No. U2 FA 070100/3506), the travel funding BQR (No. R8DIV AUE) provided by Université Lille 1, the National Natural Science Foundation of China (Grant No. 51401123) and the China Postdoctoral Science Foundation (Grant No. 2014 M561469) for Dr. Z.Q. Tan. Dr. W.G. Grünewald (LeicaMicrosystems, Germany) is also thanked for the assistance of surface preparation. Approved Most recent IF: 2.714  
  Call Number c:irua:129976 Serial 3987  
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Author Yan, L.; Tan, Z.; Ji, G.; Li, Z.; Fan, G.; Schryvers, D.; Shan, A.; Zhang, D. pdf  url
doi  openurl
  Title A quantitative method to characterize the Al4C3-formed interfacial reaction: the case study of MWCNT/Al composites Type A1 Journal article
  Year 2015 Publication Materials characterization Abbreviated Journal Mater Charact  
  Volume (up) 112 Issue 112 Pages 213-218  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The Al4C3-formed interfacial reaction plays an important role in tuning the mechanical and thermal properties of carbon/aluminum (C/Al) composites reinforced with carbonaceous materials such as multi-wall carbon nanotube (MWCNT) and graphene nanosheet. In terms of the hydrolysis nature of Al4C3, an electrochemical dissolution method was developed to quantitatively characterize the extent of C/Al interfacial reaction, which involves dissolving the composite samples in alkaline solution first, then collecting and measuring the CH4 gas released by Al4C3 hydrolysis with a gas chromatograph. Through a case study with powder metallurgy fabricated 2.0 wt.% MWCNT/Al composites, the detectability limit of the proposed method is 0.4 wt.% Al4C3, corresponding to 5 % extent of interfacial reaction with a measurement error of ±3 %. And then, with the already known MWCNT/Al reaction extent vs different sintering temperature and time, the reaction kinetics with an activation energy of 281 kJ mol-1 was successfully derived. Therefore, this rapid, sensitive, accurate method supplies an useful tool to optimize the processing and properties of all kinds of C/Al composites via interface design/control.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000370109200026 Publication Date 2015-12-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1044-5803 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.714 Times cited 24 Open Access  
  Notes The authors would like to acknowledge the financial support of the National Basic Research Program of China (973 Program, No. 2012CB619600), the National High-Tech R&D Program (863 Program, No. 2012AA030611), the National Natural Science Foundation (Nos. 51071100, 51131004, 51401123, 51511130038) and the research grant (Nos. 14DZ2261200, 15JC1402100, 14520710100) from Shanghai government. Dr. Z.Q. Tan would also like to thank the project funded by the China Postdoctoral Science Foundation (No. 2014M561469). The research leading to these results has partially received funding from the European Union Seventh Framework Program under Grant Agreement 312483 – ESTEEM2 (Integrated Infrastructure Initiative – I3).; esteem2_jra2 Approved Most recent IF: 2.714; 2015 IF: 1.845  
  Call Number c:irua:130066 c:irua:130066 Serial 3997  
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Author Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. doi  openurl
  Title Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy Type A1 Journal article
  Year 2012 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume (up) 112 Issue Pages 124505  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000312829400128 Publication Date 2012-12-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 14 Open Access  
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:136433 Serial 4510  
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Author Comrie, C.M.; Ahmed, A.; Smeets, D.; Demeulemeester, J.; Turner, S.; Van Tendeloo, G.; Detavernier, C.; Vantomme, A. pdf  doi
openurl 
  Title Effect of high temperature deposition on CoSi2 phase formation Type A1 Journal article
  Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume (up) 113 Issue 23 Pages 234902-234908  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000321011700077 Publication Date 2013-06-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 2 Open Access  
  Notes Fwo; Countatoms Approved Most recent IF: 2.068; 2013 IF: 2.185  
  Call Number UA @ lucian @ c:irua:109266 Serial 815  
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Author Goris, B.; van den Broek, W.; Batenburg, K.J.; Heidari Mezerji, H.; Bals, S. pdf  doi
openurl 
  Title Electron tomography based on a total variation minimization reconstruction technique Type A1 Journal article
  Year 2012 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume (up) 113 Issue Pages 120-130  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The 3D reconstruction of a tilt series for electron tomography is mostly carried out using the weighted backprojection (WBP) algorithm or using one of the iterative algorithms such as the simultaneous iterative reconstruction technique (SIRT). However, it is known that these reconstruction algorithms cannot compensate for the missing wedge. Here, we apply a new reconstruction algorithm for electron tomography, which is based on compressive sensing. This is a field in image processing specialized in finding a sparse solution or a solution with a sparse gradient to a set of ill-posed linear equations. Therefore, it can be applied to electron tomography where the reconstructed objects often have a sparse gradient at the nanoscale. Using a combination of different simulated and experimental datasets, it is shown that missing wedge artefacts are reduced in the final reconstruction. Moreover, it seems that the reconstructed datasets have a higher fidelity and are easier to segment in comparison to reconstructions obtained by more conventional iterative algorithms.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300554400006 Publication Date 2011-11-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 171 Open Access  
  Notes Fwo Approved Most recent IF: 2.843; 2012 IF: 2.470  
  Call Number UA @ lucian @ c:irua:93637 Serial 987  
Permanent link to this record
 

 
Author Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Antipov, E.V.; Kovba, L.M. pdf  doi
openurl 
  Title High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases Type A1 Journal article
  Year 1994 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume (up) 113 Issue Pages 193-203  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1994PP02200027 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.133 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10036 Serial 1443  
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