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Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. doi  openurl
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
  Year (down) 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B  
  Volume 112 Issue 1-4 Pages 325-329  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100069 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95886 Serial 1742  
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