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Records |
Links |
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Author |
van Dyck, D.; Van Aert, S.; Croitoru, M. |
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Title |
Atomic resolution electron tomography: a dream? |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
International journal of materials research |
Abbreviated Journal |
Int J Mater Res |
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Volume |
97 |
Issue |
7 |
Pages |
872-879 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT); Vision lab |
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Abstract |
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Wos |
000239916700003 |
Publication Date |
2013-12-09 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1862-5282;2195-8556; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.681 |
Times cited |
6 |
Open Access |
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Notes |
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Approved |
Most recent IF: 0.681; 2006 IF: NA |
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Call Number |
UA @ lucian @ c:irua:60965 |
Serial |
176 |
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Permanent link to this record |
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Author |
Zelaya, E.; Schryvers, D. |
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Title |
FCC surface precipitation in Cu-Zn-Al after low angle GA+ ion irradiation |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Materials transactions |
Abbreviated Journal |
Mater Trans |
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Volume |
51 |
Issue |
12 |
Pages |
2177-2180 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The precipitation of a disordered FCC surface structure after low angle Ga+ ion irradiation during focused ion beam thinning of a B2 Cu-Zn-Al alloy with e/a=1.48 is reported. Conventional as well as high-resolution transmission electron microscopy techniques reveal FCC layers on both sides of the thinned sample. The occurrence of this structure is attributed to disordering and dezincification of the alloy resulting from the sputtering process during the irradiation. Changes in crystallographic sample orientation with respect to the incoming ion beam do not have a significant effect on the appearance of the FCC surface structure. |
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Corporate Author |
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Thesis |
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Place of Publication |
Sendai |
Editor |
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Language |
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Wos |
000287390300009 |
Publication Date |
2010-11-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1347-5320;1345-9678; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.713 |
Times cited |
2 |
Open Access |
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Notes |
Bof; Fwo |
Approved |
Most recent IF: 0.713; 2010 IF: 0.787 |
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Call Number |
UA @ lucian @ c:irua:85997 |
Serial |
1175 |
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Permanent link to this record |
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Author |
Santamarta, R.; Schryvers, D. |
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Title |
Microstructure of a partially crystallised Ti50Ni25Cu25 melt-spun ribbon |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
Materials transactions |
Abbreviated Journal |
Mater Trans |
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Volume |
44 |
Issue |
9 |
Pages |
1760-1767 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000186013100023 |
Publication Date |
2005-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1345-9678; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.713 |
Times cited |
23 |
Open Access |
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Notes |
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Approved |
Most recent IF: 0.713; 2003 IF: 1.159 |
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Call Number |
UA @ lucian @ c:irua:48773 |
Serial |
2064 |
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Permanent link to this record |
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Author |
Schryvers, D.; Potapov, P.L. |
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Title |
R-phase structure refinement using electron diffraction data |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Materials transactions |
Abbreviated Journal |
Mater Trans |
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Volume |
43 |
Issue |
5 |
Pages |
774-779 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000176212100002 |
Publication Date |
2005-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1345-9678; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.713 |
Times cited |
25 |
Open Access |
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Notes |
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Approved |
Most recent IF: 0.713; 2002 IF: 0.841 |
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Call Number |
UA @ lucian @ c:irua:48772 |
Serial |
2805 |
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Permanent link to this record |
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Author |
Delalieux, F.; Tsuji, K.; Wagatsuma, K.; Van Grieken, R. |
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Title |
Material analysis methods applied to the study of ancient monuments, works of art and artefacts |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Materials transactions |
Abbreviated Journal |
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Volume |
43 |
Issue |
9 |
Pages |
2197-2200 |
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Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
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Abstract |
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Corporate Author |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000178449800008 |
Publication Date |
2005-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:40618 |
Serial |
8208 |
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Permanent link to this record |
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Author |
Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S.; Leibold, B.; Habermeier, H.U.; Phillipp, F. |
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Title |
Structure and magnetotransport properties of La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition |
Type |
P1 Proceeding |
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Year |
1998 |
Publication |
Materials Research Society symposium proceedings
T2 – Symposium on Advances in Laser Ablation of Materials at the 1998 MRS, Spring Meeting, April 13-16, 1998, San Francisco, Calif. |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
219-224 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
La1-xCaxMnO3-delta (LCMO) thin films are grown by pulsed laser deposition on a (100) SrTiO3 substrate at temperatures between 530 degrees C and 890 degrees C. The magnetotransport properties show a high negative magnetoresistance and a shift of the maximum of the R(T) curve as function of temperature. The Curie temperature changes with deposition temperature and film quality in the range of 100-220K. The film quality is characterised by X-ray diffraction and transmission electron microscopy (TEM); film and target compositions were verified by atomic emission spectroscopy. The local structure of the film depends on the growth conditions and substrate temperature. TEM reveals a slight distortion of the film leading to a breakdown of the symmetry from orthorhombic to monoclinic. At the highest growth temperatures, a well defined interface is observed within the LCMO film, parallel to the substrate surface; this interface divides the film into two lamellae with a different microstructure. The lamella close to the substrate is perfectly coherent with the substrate, suggesting that it is strained as a result of the lattice parameter mismatch; the upper lamella shows a typical domain structure with unusual translation interfaces characterised by a displacement vector of the type 1/2[010](m) and 1/2[001](m) when referred ten the monoclinic lattice. |
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Corporate Author |
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Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
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Language |
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Wos |
000077696000032 |
Publication Date |
2011-04-05 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
526 |
Series Issue |
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Edition |
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ISSN |
1946-4274; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95838 |
Serial |
3283 |
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Permanent link to this record |
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Author |
Mortet, V.; Zhang, L.; Echert, M.; Soltani, A.; d' Haen, J.; Douheret, O.; Moreau, M.; Osswald, S.; Neyts, E.; Troadec, D.; Wagner, P.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K. |
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Title |
Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition |
Type |
A3 Journal article |
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Year |
2009 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
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Volume |
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Issue |
1203 |
Pages |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Wuhan |
Editor |
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Language |
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Wos |
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Publication Date |
2010-03-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1946-4274; |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:81646 |
Serial |
327 |
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Permanent link to this record |
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Author |
Kahraman, Z.; Yagmurcukardes, M.; Sahin, H. |
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Title |
Functionalization of single-layer TaS₂ and formation of ultrathin Janus structures |
Type |
A1 Journal article |
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Year |
2020 |
Publication |
Journal Of Materials Research |
Abbreviated Journal |
J Mater Res |
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Volume |
35 |
Issue |
11 |
Pages |
1397-1406 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Ab initio calculations are performed to investigate the structural, vibrational, electronic, and piezoelectric properties of functionalized single layers of TaS2. We find that single-layer TaS2 is a suitable host material for functionalization via fluorination and hydrogenation. The one-side fluorinated (FTaS2) and hydrogenated (HTaS2) single layers display indirect gap semiconducting behavior in contrast to bare metallic TaS2. On the other hand, it is shown that as both surfaces of TaS2 are saturated anti-symmetrically, the formed Janus structure is a dynamically stable metallic single layer. In addition, it is revealed that out-of-plane piezoelectricity is created in all anti-symmetric structures. Furthermore, the Janus-type single-layer has the highest specific heat capacity to which longitudinal and transverse acoustical phonon modes have contribution at low temperatures. Our findings indicate that single-layer TaS2 is suitable for functionalization via H and F atoms that the formed, anti-symmetric structures display distinctive electronic, vibrational, and piezoelectric properties. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000540764300005 |
Publication Date |
2020-04-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.7 |
Times cited |
1 |
Open Access |
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Notes |
; Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. Acknowledges financial support from the TUBITAK under the project number 117F095. H.S. acknowledges support from Turkish Academy of Sciences under the GEBIP program. This work is supported by the Flemish Science Foundation (FWO-Vl) by a post-doctoral fellowship (M.Y.). ; |
Approved |
Most recent IF: 2.7; 2020 IF: 1.673 |
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Call Number |
UA @ admin @ c:irua:170185 |
Serial |
6525 |
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Permanent link to this record |
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Author |
Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G. |
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Title |
Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study |
Type |
A1 Journal article |
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Year |
2005 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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Volume |
20 |
Issue |
7 |
Pages |
1741-1750 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000230296100012 |
Publication Date |
2005-07-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914;2044-5326; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
1.673 |
Times cited |
|
Open Access |
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Notes |
Bil 01/73; IAP V-1 |
Approved |
Most recent IF: 1.673; 2005 IF: 2.104 |
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Call Number |
UA @ lucian @ c:irua:54884 |
Serial |
3631 |
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Permanent link to this record |
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Author |
Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J. |
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Title |
Microstructural investigation of BaTiO3 thin films deposited on (001) MgO |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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Volume |
17 |
Issue |
8 |
Pages |
1923-1931 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The microstructure of BaTiO3 thin films, epitaxially deposited on (001) MgO by pulsed laser ablation, has been investigated by transmission electron microscopy. The films are always c-axis-orientated, but dislocations, {111} stacking faults, and antiphase boundaries are frequently observed. Conventional TEM and high-resolution microscopy allow one to deduce the Burgers vectors of dislocations as b(1) = <100> or b(2) = <110>, both being perfect dislocations. Most extrinsic stacking faults are ending at 1/3<112> or 1/3<111> partial dislocations; the displacement vector of the antiphase boundaries is 1/2<101>. Studying the interfacial structure by means of zone images taken along [100] and [110] shows that the misfit is mainly released by dislocations with Burgers vectors of 1/2<110> and 1/2<101>. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000177208800010 |
Publication Date |
2008-03-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914;2044-5326; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.673 |
Times cited |
8 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.673; 2002 IF: 1.530 |
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Call Number |
UA @ lucian @ c:irua:103343 |
Serial |
2044 |
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Permanent link to this record |
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Author |
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
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Title |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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Volume |
16 |
Issue |
3 |
Pages |
701-708 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000167407200011 |
Publication Date |
2008-03-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914;2044-5326; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.673 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.673; 2001 IF: 1.539 |
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Call Number |
UA @ lucian @ c:irua:103926 |
Serial |
1588 |
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Permanent link to this record |
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Author |
Ahonen, P.P.; Kauppinen, E.I.; Joubert, J.C.; Deschanvres, J.L.; Van Tendeloo, G. |
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Title |
Preparation of nanocrystalline titania powder via aerosol pyrolysis of titanium tetrabutoxide |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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Volume |
14 |
Issue |
10 |
Pages |
3938-3948 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Nanocrystalline titanium dioxide was prepared via aerosol pyrolysis of titanium alkoxide precursor at 200-580 degrees C in air and in nitrogen atmospheres. Powders were characterized by x-ray diffraction, thermogravimetric analysis, Brunauer-Emmett-Teller analysis, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, x-ray fluorescence, Raman and infrared spectroscopy, and Berner-type low-pressure impactor. The anatase phase transition was initiated at 500 degrees C in nitrogen and at 580 degrees C in air. Under other conditions amorphous powders were observed and transformed to nanocrystalline TiO2 via thermal postannealing. In air, smooth and spherical particles with 2-4-mu m diameter were formed with an as-expected tendency to convert to rutile in the thermal postannealings. In nitrogen, a fraction of the titanium tetrabutoxide precursor evaporated and formed ultrafine particles via the gas-to-particle conversion. At 500 degrees C thermally stable anatase phase was formed in nitrogen. A specific surface area as high as 280 m(2) g(-1) was observed for an as-prepared powder. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000083163700019 |
Publication Date |
2008-03-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0884-2914;2044-5326; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.673 |
Times cited |
38 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.673; 1999 IF: 1.574 |
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Call Number |
UA @ lucian @ c:irua:103485 |
Serial |
2705 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
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Title |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
Mater Sci Tech-Lond |
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Volume |
11 |
Issue |
11 |
Pages |
1194-1202 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Inst Materials |
Place of Publication |
London |
Editor |
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Language |
|
Wos |
A1995TQ95100016 |
Publication Date |
2014-01-09 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0267-0836;1743-2847; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.995 |
Times cited |
7 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95911 |
Serial |
2654 |
|
Permanent link to this record |
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Author |
Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
|
|
Title |
Theoretical study of silicene and germanene |
Type |
P1 Proceeding |
|
Year |
2013 |
Publication |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
|
|
|
Keywords |
P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
The structural and electronic properties of silicene and germanene on metallic and non-metallic substrates are investigated theoretically, using first-principles simulations. We first study the interaction of silicene with Ag(111) surfaces, focusing on the (4x4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), silicene is predicted to be semiconducting, with a computed energy gap of about 0.3 eV. However, the charge transfer occurring at the silicene/Ag(111) interface leads to an overall metallic system. We next investigate the interaction of silicene and germanene with hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (semiconducting) (0001) ZnS or ZnSe surfaces, silicene and germanene are found to be semiconducting. Remarkably, the nature (indirect or direct) and magnitude of their energy band gap can be controlled by an out-of-plane electric field. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
Editor |
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Language |
|
Wos |
000354468000006 |
Publication Date |
2013-05-02 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
978-1-60768-374-2; 978-1-62332-023-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
|
Times cited |
6 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:134451 |
Serial |
4529 |
|
Permanent link to this record |
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|
Author |
Tian, H.; Schryvers, D.; Mohanchandra, K.P.; Carman, G.P.; van Humbeeck, J. |
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Title |
Fabrication and characterization of functionally graded Ni-Ti multilayer thin films |
Type |
A1 Journal article |
|
Year |
2009 |
Publication |
Functional materials letters |
Abbreviated Journal |
Funct Mater Lett |
|
|
Volume |
2 |
Issue |
2 |
Pages |
61-66 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
A functionally graded multilayer NiTi thin film was deposited on a SiO2/Si substrate by d.c. sputtering using a ramped heated NiTi alloy target. The stand-alone films were crystallized at 500°C in vacuum better than 10-7 Torr. Transmission electron microscopy micrographs taken along the film cross section show two distinct regions, thin and thick, with weak R and B2 phases, respectively. The film compositions along the thickness were measured and quantified using the standard-less EELSMODEL method. The film deposited during the initial thermal ramp (thin regions) displays an average of 54 at.% Ni while the film deposited at a more elevated target temperature (thick regions) shows about 51 at.% Ni. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
|
Editor |
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|
|
Language |
|
Wos |
000271077000003 |
Publication Date |
2009-07-22 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1793-6047;1793-7213; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.234 |
Times cited |
9 |
Open Access |
|
|
|
Notes |
Fwo |
Approved |
Most recent IF: 1.234; 2009 IF: 2.561 |
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|
Call Number |
UA @ lucian @ c:irua:77655 |
Serial |
1165 |
|
Permanent link to this record |
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Author |
Malard, B.; Pilch, J.; Sittner, P.; Gartnerova, V.; Delville, R.; Schryvers, D.; Curfs, C. |
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Title |
Microstructure and functional property changes in thin Ni-Ti wires heat teated by electric current: high energy X-ray and TEM investigations |
Type |
A1 Journal article |
|
Year |
2009 |
Publication |
Functional materials letters |
Abbreviated Journal |
Funct Mater Lett |
|
|
Volume |
2 |
Issue |
2 |
Pages |
45-54 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
High energy synchrotron X-ray diffraction, transmission electron microscopy and mechanical testing were employed to investigate the evolution of microstructure, texture and functional superelastic properties of 0.1 mm thin as drawn NiTi wires subjected to a nonconventional heat treatment by controlled electric current (FTMT-EC method). As drawn NiTi wires were prestrained in tension and exposed to a sequence of short DC power pulses in the millisecond range. The annealing time in the FTMT-EC processing can be very short but the temperature and force could be very high compared to the conventional heat treatment of SMAs. It is shown that the heavily strained, partially amorphous microstructure of the as drawn NiTi wire transforms under the effect of the DC pulse and tensile stress into a wide range of annealed nanosized microstructures depending on the pulse time. The functional superelastic properties and microstructures of the FTMT-EC treated NiTi wire are comparable to those observed in straight annealed wires. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
|
Editor |
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|
Language |
|
Wos |
000271077000001 |
Publication Date |
2009-07-22 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1793-6047;1793-7213; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.234 |
Times cited |
21 |
Open Access |
|
|
|
Notes |
Multimat |
Approved |
Most recent IF: 1.234; 2009 IF: 2.561 |
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|
Call Number |
UA @ lucian @ c:irua:77656 |
Serial |
2052 |
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Permanent link to this record |
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Author |
Bussmann-Holder, A.; Michel, K.H. |
|
|
Title |
The isotope effect in hydrogen-bonded systems |
Type |
A1 Journal article |
|
Year |
1998 |
Publication |
International journal of modern physics: B: condensed matter physics, statistical physics, applied physics
T2 – 1st International Conference on New Theories, Discoveries, and, Applications of Superconductors and Related Materials (New3SC-1), FEB 19-24, 19 |
Abbreviated Journal |
Int J Mod Phys B |
|
|
Volume |
12 |
Issue |
29-31 |
Pages |
3406-3408 |
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|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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|
Abstract |
The giant isotope effect on the ferro- and antiferroelectric transition temperature upon deuteration of hydrogen-bonded systems is well known experimentally since various decades. Yet, theoretically only recently a microscopic understanding of this effect has been achieved which, specifically, took into account the geometry of the O ... H ... O bond. The implications of this modeling are multiple as numerous hydrogen-bonded organic systems show the same effects as ferro- and antiferroelectrics, i.e., cooperative proton tunneling at a well-defined temperature. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Singapore |
Editor |
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Language |
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Wos |
000079114500104 |
Publication Date |
2003-10-01 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0217-9792;1793-6578; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
0.736 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 0.736; 1998 IF: 0.987 |
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|
Call Number |
UA @ lucian @ c:irua:102920 |
Serial |
3589 |
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Permanent link to this record |
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Author |
Afanasov, I.M.; Van Tendeloo, G. |
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Title |
Zirconia-modified exfoliated graphite |
Type |
A1 Journal article |
|
Year |
2011 |
Publication |
Inorganic materials |
Abbreviated Journal |
Inorg Mater+ |
|
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Volume |
47 |
Issue |
6 |
Pages |
603-608 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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|
Abstract |
Zirconia has been incorporated into exfoliated graphite (EG) through the anodic polarization in the natural graphite-ZrO(NO3)2-HNO3-H2O system, followed by flash heating. The thermal properties of the oxidized graphites employed as precursors to EG have been studied by thermogravimetry in combination with differential scanning calorimetry, and the distribution of ZrO2 particles in the EG has been assessed by scanning and transmission electron microscopy. Conditions are described for the preparation of EG with bulk densities in the range 1.34.7 g/l and ZrO2 contents in the range 434 wt %. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000291698100008 |
Publication Date |
2011-05-24 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0020-1685;1608-3172; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
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|
Impact Factor |
0.62 |
Times cited |
|
Open Access |
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|
Notes |
|
Approved |
Most recent IF: 0.62; 2011 IF: 0.414 |
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Call Number |
UA @ lucian @ c:irua:90447 |
Serial |
3933 |
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Permanent link to this record |
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Author |
Avetisyan, A.A.; Partoens, B.; Peeters, F.M. |
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Title |
Electric field tuning of the band gap in four layers of graphene with different stacking order |
Type |
P1 Proceeding |
|
Year |
2012 |
Publication |
Proceedings of the Society of Photo-optical Instrumentation Engineers
T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA |
Abbreviated Journal |
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Volume |
|
Issue |
|
Pages |
84140-84148 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000303856600012 |
Publication Date |
2012-01-20 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
8414 |
Series Issue |
|
Edition |
|
|
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ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record |
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Impact Factor |
|
Times cited |
|
Open Access |
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|
Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; |
Approved |
Most recent IF: NA |
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|
Call Number |
UA @ lucian @ c:irua:113046 |
Serial |
886 |
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Permanent link to this record |
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Author |
Djotyan, A.P.; Avetisyan, A.A.; Hao, Y.L.; Peeters, F.M. |
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Title |
Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip |
Type |
P1 Proceeding |
|
Year |
2012 |
Publication |
Proceedings of the Society of Photo-optical Instrumentation Engineers
T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA |
Abbreviated Journal |
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Volume |
|
Issue |
|
Pages |
84140-84148 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
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Abstract |
We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000303856600020 |
Publication Date |
2012-01-20 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
8414 |
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record |
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|
Impact Factor |
|
Times cited |
|
Open Access |
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|
|
Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl), and the Belgian Science Policy. One of us (AAA) was supported by a fellowship from the Belgian Federal Science Policy Office (Belspo). ; |
Approved |
Most recent IF: NA |
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|
Call Number |
UA @ lucian @ c:irua:113047 |
Serial |
2987 |
|
Permanent link to this record |
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Author |
Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
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Title |
Structural characterization of SnS crystals formed by chemical vapour deposition |
Type |
A1 Journal article |
|
Year |
2017 |
Publication |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
Abbreviated Journal |
J Microsc-Oxford |
|
|
Volume |
268 |
Issue |
3 |
Pages |
276-287 |
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|
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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|
Abstract |
<script type='text/javascript'>document.write(unpmarked('The crystal and defect structure of SnS crystals grown using chemical vapour deposition for application in electronic devices are investigated. The structural analysis shows the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nanometer scale thickness, and much thicker but smaller crystallites. Both show similar Raman response associated with SnS. The structural analysis with transmission electron microscopy shows that the flakes are single crystals of -SnS with [010] normal to the substrate. Parallel with the surface of the flakes, lamellae with varying thickness of a new SnS phase are observed. High-resolution transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), first-principles simulations (DFT) and nanobeam diffraction (NBD) techniques are employed to characterise this phase in detail. DFT results suggest that the phase is a strain stabilised \u0027 one grown epitaxially on the -SnS crystals. TEM analysis shows that the crystallites are also -SnS with generally the [010] direction orthogonal to the substrate. Contrary to the flakes the crystallites consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. Under high-dose electron irradiation, the SnS structure is reduced and -Sn formed. It is shown that this damage only occurs for SnS in direct contact with SiO2. Lay description SnS is a p-type semiconductor, which has attracted significant interest for electronic devices due to its unique properties, low-toxicity and abundance of Sn in nature. Although in the past it has been most extensively studied as the absorber material in solar cells, it has recently garnered interest for application as a p-type two-dimensional semiconductor in nanoelectronic devices due to its anisotropic layered structure similar to the better known phosphorene. Tin sulphide can take the form of several phases and the electronic properties of the material depend strongly on its crystal structure. It is therefore crucial to study the crystal structure of the material in order to predict the electronic properties and gain insight into the growth mechanism. In this work, SnS crystals deposited using a chemical vapour deposition technique are investigated extensively for their crystal and defect structure using transmission electron microscopy (TEM) and related techniques. We find the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nm scale thickness, and much thicker but smaller crystallites. The flakes are single crystals of -SnS and contain lamellae with varying thickness of a different phase which appear to be -SnS at first glance. High-resolution scanning transmission electron microscopy is used to characterise these lamellae where the annular bright field (ABF) mode better reveals the position of the sulphur columns. The sulphur columns in the lamellae are found to be shifted relative to the -SnS structure which indicates the formation of a new phase which is a distorted version of the phase which we tentatively refer to as \u0027-SnS. Simulations based on density functional theory (DFT) are used to model the interface and a similar shift of sulphur columns in the -SnS layer is observed which takes place as a result of strong interaction at the interface between the two phases resulting in strain transfer. Nanobeam electron diffraction (NBD) is used to map the lattice mismatch in the thickness of the flakes which reveals good in-plane matching and some expansion out-of-plane in the lamellae. Contrary to the flakes the crystallites are made solely of -SnS and consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. At high electron doses, SnS is reduced to -Sn, however the damage occurs only for SnS in direct contact with SiO2.')); |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Wiley |
Place of Publication |
Hoboken |
Editor |
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Language |
|
Wos |
000415900300009 |
Publication Date |
2017-09-28 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0022-2720 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.692 |
Times cited |
2 |
Open Access |
Not_Open_Access |
|
|
Notes |
|
Approved |
Most recent IF: 1.692 |
|
|
Call Number |
UA @ lucian @ c:irua:147692 |
Serial |
4898 |
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Permanent link to this record |
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Author |
Reyntjens, P.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B. |
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Title |
Ultrascaled graphene-capped interconnects : a quantum mechanical study |
Type |
P1 Proceeding |
|
Year |
2023 |
Publication |
Proceedings of the IEEE ... International Interconnect Technology Conference
T2 – IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany |
Abbreviated Journal |
|
|
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Volume |
|
Issue |
|
Pages |
1-3 |
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Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
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Abstract |
In this theoretical study, we assess the impact of a graphene capping layer on the resistivity of defective, extremely scaled interconnects. We investigate the effect of graphene capping on the electronic transport in ultrascaled interconnects, in the presence of grain boundary defects in the metal layer. We compare the results obtained using our quantum mechanical model to a simple parallel-conductor model and find that the parallel-conductor model does not capture the effect of the graphene cap correctly. At 0.5 nm metal thickness, the parallel-conductor model underestimates the conductivity by 3.0% to 4.0% for single-sided and double sided graphene capping, respectively. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
001027381700006 |
Publication Date |
2023-06-24 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
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ISSN |
979-83-503-1097-9 |
ISBN |
|
Additional Links |
UA library record; WoS full record |
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Impact Factor |
|
Times cited |
|
Open Access |
Not_Open_Access |
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Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ admin @ c:irua:198343 |
Serial |
8949 |
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Permanent link to this record |
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Author |
Hadermann, J.; Abakumov, A.M. |
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Title |
Structure solution and refinement of metal-ion battery cathode materials using electron diffraction tomography |
Type |
A1 Journal article |
|
Year |
2019 |
Publication |
And Materials |
Abbreviated Journal |
|
|
|
Volume |
75 |
Issue |
4 |
Pages |
485-494 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The applicability of electron diffraction tomography to the structure solution and refinement of charged, discharged or cycled metal-ion battery positive electrode (cathode) materials is discussed in detail. As these materials are often only available in very small amounts as powders, the possibility of obtaining single-crystal data using electron diffraction tomography (EDT) provides unique access to crucial information complementary to X-ray diffraction, neutron diffraction and high-resolution transmission electron microscopy techniques. Using several examples, the ability of EDT to be used to detect lithium and refine its atomic position and occupancy, to solve the structure of materials ex situ at different states of charge and to obtain in situ data on structural changes occurring upon electrochemical cycling in liquid electrolyte is discussed. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000480512600002 |
Publication Date |
2019-08-05 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
2 |
Open Access |
|
|
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Notes |
; The following funding is acknowledged: Fonds Wetenschappelijk Onderzoek (grant No. G040116N); Russian Foundation of Basic Research (grant No. 17-03-00370-a). ; |
Approved |
Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:161846 |
Serial |
5397 |
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Permanent link to this record |
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Author |
Tian, X.; Xie, X.; Li, J.; Kong, X.; Gong, W.-J.; Peeters, F.M.; Li, L. |
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Title |
Multiferroic ScLaX₂ (X = P, As, and Sb) monolayers : bidirectional negative Poisson's ratio effects and phase transformations driven by rare-earth (main-group) elements |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
8 |
Pages |
084407-84411 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The combination of auxetic property, ferroelasticity, and ferroelectricity in two-dimensional materials offers new avenues for next-generation multifunctional devices. However, two-dimensional materials that simultaneously exhibit those properties are rarely reported. Here, we present a class of two-dimensional Janus-like structures ScLaX2 X 2 (X X = P, As, and Sb) with a rectangular lattice based on first-principles calculations. We predict that those ScLaX2 X 2 monolayers are stable semiconductors with both intrinsic in-plane and out-of-plane auxetic properties, showing a bidirectional negative Poisson's ratio effect. The value of the out-of-plane negative Poisson's ratio effect can reach – 2.28 /- 3.06 /- 3.89. By applying uniaxial strain engineering, two transition paths can be found, including the VA main group element path and the rare-earth metal element path, corresponding to the ferroelastic and the multiferroic (ferroelastic and ferroelectric) phase transition, respectively. For the ScLaSb2 2 monolayer, the external force field can not only control the ferroelastic phase transition, but it can also lead to the reversal of the out-of-plane polarization, exhibiting potential multiferroicity. The coupling between the bidirectional negative Poisson's ratio effect and multiferroicity makes the ScLaX2 X 2 monolayers promising for future device applications. |
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Place of Publication |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001293 |
Publication Date |
2024-08-13 |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:207592 |
Serial |
9306 |
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Permanent link to this record |
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Author |
Kandemir, Z.; D'Amico, P.; Sesti, G.; Cardoso, C.; Milošević, M.V.; Sevik, C. |
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Title |
Optical properties of metallic MXene multilayers through advanced first-principles calculations |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
7 |
Pages |
075201-75210 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Having a strong electromagnetic absorption, MXene multilayers are readily envisaged for applications in electromagnetic shields and related prospective technology. However, an ab initio characterization of the optical properties of MXenes is still lacking, due in part to major difficulties with the treatment of metallicity in the first-principles approaches. Here we addressed the latter challenge, after a careful treatment of intraband transitions, to present a thorough analysis of the electronic and optical properties of a selected set of metallic MXene layers based on density functional theory (DFT) and many-body perturbation theory calculations. Our results reveal that the GW corrections are particularly important in regions of the band structure where d and p states hybridize. For some systems, we show that GW corrections open a gap between occupied states, resulting in a band structure that closely resembles that of an intrinsic transparent conductor, thereby opening an additional line of prospective applications for the MXenes family. Nevertheless, GW and Bethe-Salpeter corrections have a minimal influence on the absorption spectra, in contrast to what is typically observed in semiconductor layers. Our present results suggest that calculations within the independent particle approximation (IPA) calculations are sufficiently accurate for assessing the optical characteristics of bulk-layered MXene materials. Finally, our calculated dielectric properties and absorption spectra, in agreement with existing experimental data, confirm the potential of MXenes as effective infrared emitters. |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001275 |
Publication Date |
2024-07-22 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:207597 |
Serial |
9309 |
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Permanent link to this record |
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Author |
Šoškić, B.N.; Bekaert, J.; Sevik, C.; Šljivančanin, Ž.; Milošević, M.V. |
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Title |
First-principles exploration of superconductivity in intercalated bilayer borophene phases |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
6 |
Pages |
064803-64811 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We explore the emergence of phonon-mediated superconductivity in bilayer borophenes by controlled intercalation with elements from the groups of alkali, alkaline-earth, and transition metals, using systematic first-principles and Eliashberg calculations. We show that the superconducting properties are primarily governed by the interplay between the out-of-plane (????????) boron states and the partially occupied in-plane (????+????????,????) bonding states at the Fermi level. Our Eliashberg calculations indicate that intercalation with alkaline-earth-metal elements leads to the highest superconducting critical temperatures (????????). Specifically, Be in ????4, Mg in ????3, and Ca in the kagome bilayer borophene demonstrate superior performance with ???????? reaching up to 58 K. Our study therefore reveals that intercalated bilayer borophene phases are not only more resilient to chemical deterioration, but also harbor enhanced ???????? values compared to their monolayer counterparts, underscoring their substantial potential for the development of boron-based two-dimensional superconductors. |
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Place of Publication |
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Wos |
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=brocade2&SrcAuth=WosAPI&KeyUT=WOS:001254 |
Publication Date |
2024-06-24 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:206919 |
Serial |
9290 |
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Permanent link to this record |
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Author |
Kocabas, T.; Samanta, B.; Barboza, E. da S.; Sevik, C.; Milošević, M.V.; Çakir, D. |
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Title |
Electron-phonon coupling and thermal conductivity of MAB compounds |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
5 |
Pages |
055002-55011 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We investigated the electron-phonon ( e -ph ) coupling and vibrational thermal conductivity in the representative MAB compounds, namely MoAlB, WAlB, Tc 2 AlB 2 , and Cr 2 AlB 2 . The spectral distribution functions of e -ph interaction, obtained through ab initio linear-response calculations, reveal that the electron-phonon coupling values range from low (0.15) to moderate (0.58). With such e -ph coupling, out of the considered compounds, only Tc 2 AlB 2 exhibits a superconducting transition, at 4 K. We further evaluated the thermal conductivity and associated properties like scattering rates, obtained using ab initio and other methodologies. The latter included the iterative solution of the Peierls-Boltzmann transport equation, using HIPHIVE package for advanced optimization and machine learning techniques, and employing maximum likelihood estimation to approximate scattering rates from a limited set of scattering processes. We found that these methods yield nearly identical predictions for thermal conductivity values, with a significant decrease in the computational cost compared to the first-principles methods. We examined interactions arising from both three-phonon (3 ph ) and four -phonon (4 ph ) scattering processes. The 4 ph interactions demonstrated a smaller yet significant impact on the overall vibrational thermal conductivity, most notably in Tc 2 AlB 2 . Our findings indicate that Cr 2 AlB 2 has the highest thermal conductivity across all considered crystal directions, with the thermal conductivity being spatially anisotropic, most pronouncedly in Tc 2 AlB 2 . Finally, we show that empirical expressions based on Slack models are well suited for screening the thermal conductivity properties of MAB phases, and can be employed to establish upper and lower limits of their thermal conductivity. |
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Wos |
001231927600005 |
Publication Date |
2024-05-21 |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:206590 |
Serial |
9286 |
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Author |
Folkers, B.; Jansen, T.; Roskamp, T.J.; Reith, P.; Timmermans, A.; Jannis, D.; Gauquelin, N.; Verbeeck, J.; Hilgenkamp, H.; Rosario, C.M.M. |
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Title |
Imaging the suppression of ferromagnetism in LaMnO₃ by metallic overlayers |
Type |
A1 Journal article |
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Year |
2024 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
8 |
Issue |
5 |
Pages |
054408-6 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
LaMnO 3 (LMO) thin films epitaxially grown on SrTiO 3 (STO) usually exhibit ferromagnetism above a critical layer thickness. We report the use of scanning SQUID microscopy (SSM) to study the suppression of the ferromagnetism in STO / LMO / metal structures. By partially covering the LMO surface with a metallic layer, both covered and uncovered LMO regions can be studied simultaneously. While Au does not significantly influence the ferromagnetic order of the underlying LMO film, a thin Ti layer induces a strong suppression of the ferromagnetism, over tens of nanometers, which increases with time on a timescale of days. Detailed electron energy loss spectroscopy analysis of the Ti-LaMnO 3 interface reveals the presence of Mn 2 + and an evolution of the Ti valence state from Ti 0 to Ti 4 + over approximately 5 nm. Furthermore, we demonstrate that by patterning Ti / Au overlayers, we can locally suppress the ferromagnetism and define ferromagnetic structures down to sub -micrometer scales. |
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Wos |
001239765800005 |
Publication Date |
2024-05-13 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
3.4 |
Times cited |
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Open Access |
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Approved |
Most recent IF: 3.4; 2024 IF: NA |
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Call Number |
UA @ admin @ c:irua:206555 |
Serial |
9297 |
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Author |
Shi, W.; Pandey, T.; Lindsay, L.; Woods, L.M. |
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Title |
Vibrational properties and thermal transport in quaternary chalcogenides : the case of Te-based compositions |
Type |
A1 Journal article |
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Year |
2021 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
5 |
Issue |
4 |
Pages |
045401 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Vibrational thermal properties of CuZn2InTe4, AgZn2InTe4, and Cu2CdSnTe4, derived from binary II-VI zinc-blendes, are reported based on first-principles calculations. While the chalcogenide atoms in these materials have the same lattice positions, the cation atom arrangements vary, resulting in different crystal symmetries and subsequent properties. The compositional differences have important effects on the vibrational thermal characteristics of the studied materials, which demonstrate that low-frequency optical phonons hybridize with acoustic phonons and lead to enhanced phonon-phonon scattering and low lattice thermal conductivities. The phonon density of states, mode Gruneisen parameters, and phonon scattering rates are also calculated, enabling deeper insight into the microscopic thermal conduction processes in these materials. Compositional variations drive differences among the three materials considered here; nonetheless, their structural similarities and generally low thermal conductivities (0.5-4 W/mK at room temperature) suggest that other similar II-VI zinc-blende derived materials will also exhibit similarly low values, as also corroborated by experimental data. This, combined with the versatility in designing a variety of motifs on the overall structure, makes quaternary chalcogenides interesting for thermal management and energy conversion applications that require low thermal conductivity. |
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Wos |
000655931400005 |
Publication Date |
2021-04-01 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ admin @ c:irua:179140 |
Serial |
7045 |
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Author |
Kalashami, H.G.; Neek-Amal, M.; Peeters, F.M. |
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Title |
Slippage dynamics of confined water in graphene oxide capillaries |
Type |
A1 Journal article |
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Year |
2018 |
Publication |
Physical review materials |
Abbreviated Journal |
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Volume |
2 |
Issue |
7 |
Pages |
074004 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The permeation of water between neighboring graphene oxide (GO) flakes, i.e., 2D nanochannels, are investigated using a simple model for the GO membrane. We simulate the hydrophilic behavior of nanocapillaries and study the effect of surface charge on the dynamical properties of water flow and the influence of Na+ and Cl- ions on water permeation. Our approach is based on extensive equilibrium molecular dynamics simulations to obtain a better understanding of water permeation through charged nanochannels in the presence of ions. We found significant change in the slippage dynamics of confined water such as a profound increase in viscosity/slip length with increasing charges over the surface. The slip length decreases one order of magnitude (i.e., 1/30) with increasing density of surface charge, while it increases by a factor of 2 with ion concentration. We found that commensurability induced by nanoconfinement plays an important role on the intrinsic dynamical properties of water. |
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Publisher |
American Physical Society |
Place of Publication |
College Park, Md |
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Language |
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Wos |
000439435200006 |
Publication Date |
2018-07-23 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2475-9953 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
1 |
Open Access |
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Notes |
; We acknowledge fruitful discussions with Andre K. Geim, Irina Grigorieva, and Rahul R. Nair. This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem program. ; |
Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:152409UA @ admin @ c:irua:152409 |
Serial |
5128 |
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Permanent link to this record |