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Author |
Title  |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; Hevesi, K.; Gensterblum, G.; Yu, L.M.; Pireaux, J.J.; Grey, F.; Bohr, J. |
Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001) |
1996 |
Journal of applied physics |
80 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Milovanović, S.P.; Covaci, L.; Peeters, F.M. |
Strain fields in graphene induced by nanopillar mesh |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Tadić, M.; Peeters, F.M.; Janssens, K.L.; Korkusinski, M.; Hawrylak, P. |
Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots |
2002 |
Journal of applied physics |
92 |
73 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Papp, G.; Borza, S.; Peeters, F.M. |
Spin transport in a Mn-doped ZnSe asymmetric tunnel structure |
2005 |
Journal of applied physics |
97 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Yan, M.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J. |
Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4 |
2000 |
Journal of applied physics |
87 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Rethfeld, B.; Bogaerts, A. |
Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions |
2012 |
Journal of applied physics |
111 |
30 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Andrikopoulos, D.; Sorée, B.; De Boeck, J. |
Skyrmion-induced bound states on the surface of three-dimensional topological insulators |
2016 |
Journal of applied physics |
119 |
8 |
UA library record; WoS full record; WoS citing articles |
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Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C. |
Size distribution and magnetic behavior of lead inclusions in silicon single crystals |
1997 |
Journal of applied physics |
81 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Resta, V.; Siegel, J.; Bonse, J.; Gonzalo, J.; Afonso, C.N.; Piscopiello, E.; Van Tenedeloo, G.; |
Sharpening the shape distribution of gold nanoparticles by laser irradiation |
2006 |
Journal of applied physics |
100 |
36 |
UA library record; WoS full record; WoS citing articles |
|
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|
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. |
Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions |
2018 |
Journal of applied physics |
124 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Depla, D.; Li, X.Y.; Mahieu, S.; van Aeken, K.; Leroy, W.P.; Haemers, J.; de Gryse, R.; Bogaerts, A. |
Rotating cylindrical magnetron sputtering: simulation of the reactive process |
2010 |
Journal of applied physics |
107 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Baguer, N.; Bogaerts, A.; Gijbels, R. |
Role of the fast Ar atoms, Ar+ ions and metastable Ar atoms in a hollow cathode glow discharge: study by a hybrid model |
2003 |
Journal of applied physics |
94 |
19 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bogaerts, A.; Gijbels, R. |
Role of sputtered Cu atoms and ions in a direct current glow discharge: combined fluid and Monte Carlo model |
1996 |
Journal of applied physics |
79 |
81 |
UA library record; WoS full record; WoS citing articles |
|
|
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Bogaerts, A.; Gijbels, R. |
Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description |
1999 |
Journal of applied physics |
86 |
50 |
UA library record; WoS full record; WoS citing articles |
|
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Chen, Z.; Bogaerts, A. |
Response to “Comment on 'Laser ablation of Cu and plume expansion into 1 atm ambient gas'” [J. Appl. Phys. 115, 166101 (2014)] |
2014 |
Journal of applied physics |
115 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Cornelissens, Y.G.; Peeters, F.M. |
Response function of a Hall magnetosensor in the diffusive regime |
2002 |
Journal of applied physics |
92 |
24 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. |
Resistivity scaling and electron relaxation times in metallic nanowires |
2014 |
Journal of applied physics |
116 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Papp, G.; Peeters, F.M. |
Resistance maps from local probing of a ballistic mesoscopic Hall bar |
2007 |
Journal of applied physics |
101 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Papp, G.; Peeters, F.M. |
Resistance maps for a submicron Hall electrosensor in the diffusive regime |
2007 |
Journal of applied physics |
101 |
7 |
UA library record; WoS full record; WoS citing articles |
|
|
|
de Sousa, A.A.; Chaves, A.; Pereira, T.A.S.; Farias, G.A.; Peeters, F.M. |
Quantum tunneling between bent semiconductor nanowires |
2015 |
Journal of applied physics |
118 |
7 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor |
2003 |
Journal of applied physics |
93 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
2004 |
Journal of applied physics |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
2014 |
Journal of applied physics |
115 |
15 |
UA library record; WoS full record; WoS citing articles |
|
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Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. |
Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? |
2017 |
Japanese journal of applied physics |
56 |
18 |
UA library record; WoS full record; WoS citing articles |
|
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Wouters, J.; Lebedev, O.I.; Van Tendeloo, G.; Yamada, H.; Sato, N.; Vanacken, J.; Moshchalkov, V.V.; Verbiest, T.; Valev, V.K. |
Preparing polymer films doped with magnetic nanoparticles by spin-coating and melt-processing can induce an in-plane magnetic anisotropy |
2011 |
Journal of applied physics |
109 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
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Saberi-Pouya, S.; Vazifehshenas, T.; Saleh, M.; Farmanbar, M.; Salavati-fard, T. |
Plasmon modes in monolayer and double-layer black phosphorus under applied uniaxial strain |
2018 |
Journal of applied physics |
123 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bruggeman, P.J.; Bogaerts, A.; Pouvesle, J.M.; Robert, E.; Szili, E.J. |
Plasma–liquid interactions |
2021 |
Journal Of Applied Physics |
130 |
|
UA library record |
|
|
|
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
2013 |
Journal of applied physics |
113 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. |
Phonon-assisted tunneling in direct-bandgap semiconductors |
2019 |
Journal of applied physics |
125 |
2 |
UA library record; WoS full record; WoS citing articles |
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