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Author Chen, Z.; Bogaerts, A.; Vertes, A. doi  openurl
  Title Phase explosion in atmospheric pressure infrared laser ablation from water-rich targets Type A1 Journal article
  Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 89 Issue 4 Pages 041503,1-3  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000239376500032 Publication Date 2006-08-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 32 Open Access  
  Notes Approved Most recent IF: 3.411; 2006 IF: 3.977  
  Call Number UA @ lucian @ c:irua:58732 Serial 2583  
Permanent link to this record
 
 
Author Wen, D.-Q.; Zhang, Q.-Z.; Jiang, W.; Song, U.-H.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Phase modulation in pulsed dual-frequency capacitively coupled plasmas Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 115 Issue 23 Pages 233303  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Particle-in-cell/Monte Carlo collision simulations, coupled with an external circuit, are used to investigate the behavior of pulsed dual-frequency (DF) capacitively coupled plasmas (CCPs). It is found that the phase shift θ between the high (or low) frequency source and the pulse modulation has a great influence on the ion density and the ionization rate. By pulsing the high frequency source, the time-averaged ion density shows a maximum when θ = 90∘. The time-averaged ion energy distribution functions (IEDFs) at the driven electrode, however, keep almost unchanged, illustrating the potential of pulsed DF-CCP for independent control of ion density (and flux) and ion energy. A detailed investigation of the temporal evolution of the plasma characteristics indicates that several high frequency harmonics can be excited at the initial stage of a pulse period by tuning the phase shift θ, and this gives rise to strong sheath oscillations, and therefore high ionization rates. For comparison, the pulsing of the low frequency source is also studied. In this case, the ion density changes slightly as a function of time, and the time-averaged ion density shows the same trend as in the HF modulation for different phase shifts θ. Moreover, the time-averaged IEDFs at the driven electrode can be modulated, showing the potential to reduce the maximum ion bombardment energy.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000338106000008 Publication Date 2014-06-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 8 Open Access  
  Notes Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:117415 Serial 2585  
Permanent link to this record
 
 
Author Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. doi  openurl
  Title Phonon-assisted Zener tunneling in a cylindrical nanowire transistor Type A1 Journal article
  Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 113 Issue 18 Pages 184507-184508  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000319294100093 Publication Date 2013-05-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 4 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. ; Approved Most recent IF: 2.068; 2013 IF: 2.185  
  Call Number UA @ lucian @ c:irua:109651 Serial 2599  
Permanent link to this record
 
 
Author Peelaers, H.; Partoens, B.; Peeters, F.M. doi  openurl
  Title Phonons in Ge nanowires Type A1 Journal article
  Year 2009 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 95 Issue 12 Pages 122110,1-122110,3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigated. Confinement causes a hardening of the optical modes and a softening of the longitudinal acoustic modes. The stability of the nanowires, undoped or doped with B or P atoms, is investigated using the obtained phonon spectra. All considered wires were stable, except for highly doped, very thin nanowires.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000270243800035 Publication Date 2009-09-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 12 Open Access  
  Notes Approved Most recent IF: 3.411; 2009 IF: 3.554  
  Call Number UA @ lucian @ c:irua:79307 Serial 2606  
Permanent link to this record
 
 
Author Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. doi  openurl
  Title Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers Type A1 Journal article
  Year 2009 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 106 Issue 8 Pages 083704,1-083704,9  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent methodmaking use of a nonuniform spatial mesh and of the Broyden second methodto solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high- insulator, to Coulomb scattering interface traps or oxide chargesignored in our calculationsand to different channel structures employed.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000271358100050 Publication Date 2009-10-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 29 Open Access  
  Notes Approved Most recent IF: 2.068; 2009 IF: 2.072  
  Call Number UA @ lucian @ c:irua:80137 Serial 2617  
Permanent link to this record
 
 
Author Idrissi, H.; Kobler, A.; Amin-Ahmadi, B.; Coulombier, M.; Galceran, M.; Raskin, J.-P.; Godet, S.; Kuebel, C.; Pardoen, T.; Schryvers, D. doi  openurl
  Title Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing Type A1 Journal article
  Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 104 Issue 10 Pages 101903  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected. (C) 2014 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000333082800022 Publication Date 2014-03-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 24 Open Access  
  Notes Approved Most recent IF: 3.411; 2014 IF: 3.302  
  Call Number UA @ lucian @ c:irua:116866 Serial 2649  
Permanent link to this record
 
 
Author Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Tafuri, F.; Granozio, F.M.; Di Chiara, A.; Bender, H. pdf  doi
openurl 
  Title A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction Type A1 Journal article
  Year 1999 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 74 Issue 7 Pages 1024-1026  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000078571400043 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 5 Open Access  
  Notes Approved Most recent IF: 3.411; 1999 IF: 4.184  
  Call Number UA @ lucian @ c:irua:102912 Serial 2686  
Permanent link to this record
 
 
Author Wouters, J.; Lebedev, O.I.; Van Tendeloo, G.; Yamada, H.; Sato, N.; Vanacken, J.; Moshchalkov, V.V.; Verbiest, T.; Valev, V.K. pdf  doi
openurl 
  Title Preparing polymer films doped with magnetic nanoparticles by spin-coating and melt-processing can induce an in-plane magnetic anisotropy Type A1 Journal article
  Year 2011 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 109 Issue 7 Pages 076105-076105,3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Faraday rotation has been used to investigate a series of polymer films doped with magnetic iron oxide nanoparticles. The films have been prepared by spin-coating and melt-processing. In each case, upon varying the angle of optical incidence on the films, an in-plane magnetic anisotropy is observed. The effect of such an anisotropy on the Faraday rotation as a function of the angle of optical incidence is verified by comparison with magnetically poled films. These results demonstrate that care should be taken upon analyzing the magnetic behavior of such films on account of the sample preparation techniques themselves being able to affect the magnetization.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000289949000166 Publication Date 2011-04-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 10 Open Access  
  Notes Fwo; Iap; Iwt Approved Most recent IF: 2.068; 2011 IF: 2.168  
  Call Number UA @ lucian @ c:irua:89917 Serial 2709  
Permanent link to this record
 
 
Author Peelaers, H.; Partoens, B.; Peeters, F.M. url  doi
openurl 
  Title Properties of B and P doped Ge nanowires Type A1 Journal article
  Year 2007 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 90 Issue Pages 263103,1-3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000247625500068 Publication Date 2007-06-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 35 Open Access  
  Notes Approved Most recent IF: 3.411; 2007 IF: 3.596  
  Call Number UA @ lucian @ c:irua:69642 Serial 2728  
Permanent link to this record
 
 
Author Martens, T.; Bogaerts, A.; van Dijk, J. doi  openurl
  Title Pulse shape influence on the atmospheric barrier discharge Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 96 Issue 13 Pages 131503,1-131503,3  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this letter we compare the effect of a radio-frequency sine, a low frequency sine, a rectangular and a pulsed dc voltage profile on the calculated electron production and power consumption in the dielectric barrier discharge. We also demonstrate using calculated potential distribution profiles of high time and space resolution how the pulsed dc discharge generates a secondary discharge pulse by deactivating the power supply.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000276275300019 Publication Date 2010-03-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 35 Open Access  
  Notes Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:81538 Serial 2738  
Permanent link to this record
 
 
Author Salje, E.K.H.; Zhang, H.; Schryvers, D.; Bartova, B. pdf  doi
openurl 
  Title Quantitative Landau potentials for the martensitic transformation in Ni-Al Type A1 Journal article
  Year 2007 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 90 Issue 22 Pages 221903,1-3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000246909900020 Publication Date 2007-05-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.411; 2007 IF: 3.596  
  Call Number UA @ lucian @ c:irua:64777 Serial 2757  
Permanent link to this record
 
 
Author Chang, K.; Xia, J.B.; Wu, H.B.; Feng, S.L.; Peeters, F.M. doi  openurl
  Title Quantum-confined magneto-Stark effect in diluted magnetic semiconductor coupled quantum wells Type A1 Journal article
  Year 2002 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 80 Issue 10 Pages 1788-1790  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The magneto-Stark effect in a diluted magnetic semiconductor (DMS) coupled quantum well (CQW) induced by an in-plane magnetic field is investigate theoretically. Unlike the usual electro-Stark effects, in a DMS CQW the Lorenz force leads to a spatially separated exciton. The in-plane magnetic field can shift the ground state of the magnetoexciton from a zero in-plane center of mass (CM)/momentum to a finite CM momentum, and render the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. (C) 2002 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000174181800036 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 8 Open Access  
  Notes Approved Most recent IF: 3.411; 2002 IF: 4.207  
  Call Number UA @ lucian @ c:irua:94932 Serial 2775  
Permanent link to this record
 
 
Author Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. doi  openurl
  Title Quantum mechanical solver for confined heterostructure tunnel field-effect transistors Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 115 Issue 5 Pages 053706-53708  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement. (C) 2014 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000331645900040 Publication Date 2014-02-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 15 Open Access  
  Notes ; D. Verreck acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:115825 Serial 2780  
Permanent link to this record
 
 
Author Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. doi  openurl
  Title Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor Type A1 Journal article
  Year 2004 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 96 Issue Pages 2305-2310  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000223055100081 Publication Date 2004-08-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 14 Open Access  
  Notes Approved Most recent IF: 2.068; 2004 IF: 2.255  
  Call Number UA @ lucian @ c:irua:49454 Serial 2792  
Permanent link to this record
 
 
Author Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. doi  openurl
  Title Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor Type A1 Journal article
  Year 2003 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 93 Issue Pages 1230-1240  
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000180134200069 Publication Date 2003-01-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 16 Open Access  
  Notes Approved Most recent IF: 2.068; 2003 IF: 2.171  
  Call Number UA @ lucian @ c:irua:40874 Serial 2793  
Permanent link to this record
 
 
Author Saniz, R.; Dixit, H.; Lamoen, D.; Partoens, B. pdf  doi
openurl 
  Title Quasiparticle energies and uniaxial pressure effects on the properties of SnO2 Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 97 Issue Pages 261901-261901,3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)  
  Abstract We calculate the quasiparticle energy spectrum of SnO2 within the GW approximation, properly taking into account the contribution of core levels to the energy corrections. The calculated fundamental gap is of 3.85 eV. We propose that the difference with respect to the experimental optical gap (3.6 eV) is due to excitonic effects in the latter. We further consider the effect applied on uniaxial pressure along the c-axis. Compared to GW, the effect of pressure on the quasiparticle energies and band gap is underestimated by the local-density approximation. The quasiparticle effective masses, however, appear to be well described by the latter.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000285768100015 Publication Date 2010-12-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 23 Open Access  
  Notes Iwt; Fwo; Bof-Noi Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:85759 Serial 2803  
Permanent link to this record
 
 
Author Neek-Amal, M.; Sadeghi, A.; Berdiyorov, G.R.; Peeters, F.M. doi  openurl
  Title Realization of free-standing silicene using bilayer graphene Type A1 Journal article
  Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 103 Issue 26 Pages 261904-4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The available synthesized silicene-like structures have been only realized on metallic substrates which are very different from the standalone buckled silicene, e. g., the Dirac cone of silicene is destroyed due to lattice distortion and the interaction with the substrate. Using graphene bilayer as a scaffold, a route is proposed to synthesize silicene with electronic properties decoupled from the substrate. The buckled hexagonal arrangement of silicene between the graphene layers is found to be very similar to the theoretically predicted standalone buckled silicene which is only very weakly van der Waals coupled to the graphene layers with a graphite-like interlayer distance of 3.42 angstrom and without any lattice distortion. We found that these stacked layers are stable well above room temperature. (C) 2013 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000329977400022 Publication Date 2013-12-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 74 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem Foundation of the Flemish Government. M.N.-A. was supported by the EU-Marie Curie IIF postdoc Fellowship/299855. ; Approved Most recent IF: 3.411; 2013 IF: 3.515  
  Call Number UA @ lucian @ c:irua:114849 Serial 2837  
Permanent link to this record
 
 
Author Papp, G.; Peeters, F.M. url  doi
openurl 
  Title Resistance maps for a submicron Hall electrosensor in the diffusive regime Type A1 Journal article
  Year 2007 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 101 Issue 11 Pages 113717,1-6  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000247306000084 Publication Date 2007-06-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.068; 2007 IF: 2.171  
  Call Number UA @ lucian @ c:irua:69645 Serial 2879  
Permanent link to this record
 
 
Author Papp, G.; Peeters, F.M. url  doi
openurl 
  Title Resistance maps from local probing of a ballistic mesoscopic Hall bar Type A1 Journal article
  Year 2007 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 101 Issue 6 Pages 063715,1-4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000245317700086 Publication Date 2007-03-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 5 Open Access  
  Notes Approved Most recent IF: 2.068; 2007 IF: 2.171  
  Call Number UA @ lucian @ c:irua:64299 Serial 2880  
Permanent link to this record
 
 
Author Kalkert, C.; Krisponeit, J.-O.; Esseling, M.; Lebedev, O.I.; Moshnyaga, V.; Damaschke, B.; Van Tendeloo, G.; Samwer, K. pdf  doi
openurl 
  Title Resistive switching at manganite/manganite interfaces Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 99 Issue 13 Pages 132512-132512,3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report bipolar resistive switching between the interfaces of manganite nanocolumns. La0.7Sr0.3MnO3 films were prepared on Al2O3 substrates, where the films grow in nanocolumns from the substrate to the surface. Conductive atomic force microscopy directly detects that the resistive switching is located at the boundaries of the grains. Furthermore, mesoscopic transport measurements reveal a tunnel magnetoresistance. In combination with the resistive switching, this leads to a total of four different resistive states.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000295618000052 Publication Date 2011-09-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 10 Open Access  
  Notes Approved Most recent IF: 3.411; 2011 IF: 3.844  
  Call Number UA @ lucian @ c:irua:91884 Serial 2881  
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Author Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. url  doi
openurl 
  Title Resistivity scaling and electron relaxation times in metallic nanowires Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 116 Issue 6 Pages 063714  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10. (C) 2014 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000341179400036 Publication Date 2014-08-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 17 Open Access  
  Notes ; ; Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:119260 Serial 2882  
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Author Cornelissens, Y.G.; Peeters, F.M. doi  openurl
  Title Response function of a Hall magnetosensor in the diffusive regime Type A1 Journal article
  Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 92 Issue 4 Pages 2006-2012  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Two-dimensional electron gas systems patterned into micrometer Hall bars can be used as Hall magnetosensors. In this way, ballistic Hall probes have already been studied and used successfully. Here, the response function of a Hall sensor is determined in the diffusive regime, which allows this device to be used as a magnetosensor for the determination of inhomogeneous magnetic field distributions. Furthermore, the influence of the geometry of the Hall bar on this response function, such as circular corners and asymmetry in the probes, is also investigated and appears to be non-negligible. (C) 2002 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000177171700046 Publication Date 2002-09-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 24 Open Access  
  Notes Approved Most recent IF: 2.068; 2002 IF: 2.281  
  Call Number UA @ lucian @ c:irua:102826 Serial 2897  
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Author Chen, Z.; Bogaerts, A. doi  openurl
  Title Response to “Comment on 'Laser ablation of Cu and plume expansion into 1 atm ambient gas'” [J. Appl. Phys. 115, 166101 (2014)] Type Editorial
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 115 Issue 16 Pages 166102  
  Keywords Editorial; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000335228400092 Publication Date 2014-05-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 1 Open Access  
  Notes Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:117171 Serial 2898  
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Author Autrique, D.; Gornushkin, I.; Alexiades, V.; Chen, Z.; Bogaerts, A.; Rethfeld, B. pdf  doi
openurl 
  Title Revisiting the interplay between ablation, collisional, and radiative processes during ns-laser ablation Type A1 Journal article
  Year 2013 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 103 Issue 17 Pages 174102-174105  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A study of ns-laser ablation is presented, which focuses on the transient behavior of the physical processes that act in and above a copper sample. A dimensionless multiphase collisional radiative model describes the interplay between the ablation, collisional, and radiative mechanisms. Calculations are done for a 6 ns-Nd:YAG laser pulse operating at 532 nm and fluences up to 15 J/cm2. Temporal intensity profiles as well as transmissivities are in good agreement with experimental results. It is found that volumetric ablation mechanisms and photo-processes both play an essential role in the onset of ns-laser induced breakdown.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000326455100107 Publication Date 2013-10-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.411; 2013 IF: 3.515  
  Call Number UA @ lucian @ c:irua:110944 Serial 2906  
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Author van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. pdf  doi
openurl 
  Title The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN Type A1 Journal article
  Year 2005 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 87 Issue 6 Pages 061905,1-3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000231016900019 Publication Date 2005-08-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 57 Open Access  
  Notes Approved Most recent IF: 3.411; 2005 IF: 4.127  
  Call Number UA @ lucian @ c:irua:54808 Serial 2910  
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Author Bogaerts, A.; Gijbels, R. doi  openurl
  Title The role of fast argon ions and atoms in the ionization of argon in a direct current glow discharge: a mathematical simulation Type A1 Journal article
  Year 1995 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 78 Issue Pages 6427-6431  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos A1995TH85100012 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.183 Times cited 60 Open Access  
  Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 #  
  Call Number UA @ lucian @ c:irua:12264 Serial 2913  
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Author Autrique, D.; Clair, G.; L'Hermite, D.; Alexiades, V.; Bogaerts, A.; Rethfeld, B. pdf  doi
openurl 
  Title The role of mass removal mechanisms in the onset of ns-laser induced plasma formation Type A1 Journal article
  Year 2013 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 114 Issue 2 Pages 023301-23310  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The present study focuses on the role of mass removal mechanisms in ns-laser ablation. A copper sample is placed in argon, initially set at standard pressure and temperature. Calculations are performed for a 6 ns laser pulse with a wavelength of 532 nm and laser fluences up to 10 J/cm2. The transient behavior in and above the copper target is described by a hydrodynamic model. Transmission profiles and ablation depths are compared with experimental results and similar trends are found. Our calculations reveal an interesting self-inhibiting mechanism: volumetric mass removal in the supercritical region triggers plasma shielding and therefore stops proceeding. This self-limiting process indicates that volumetric mass removal does not necessarily result in large ablation depths.  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000321761600006 Publication Date 2013-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 31 Open Access  
  Notes Approved Most recent IF: 2.068; 2013 IF: 2.185  
  Call Number UA @ lucian @ c:irua:109237 Serial 2915  
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Author Salman, O.U.; Finel, A.; Delville, R.; Schryvers, D. pdf  doi
openurl 
  Title The role of phase compatibility in martensite Type A1 Journal article
  Year 2012 Publication Journal of applied physics T2 – 22nd International Symposium on Integrated Functionalities (ISIF), JUN 13-16, 2010, San Juan, PR Abbreviated Journal J Appl Phys  
  Volume 111 Issue 10 Pages 103517  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Shape memory alloys inherit their macroscopic properties from their mesoscale microstructure originated from the martensitic phase transformation. In a cubic to orthorhombic transition, a single variant of martensite can have a compatible (exact) interface with the austenite for some special lattice parameters in contrast to conventional austenite/twinned martensite interface with a transition layer. Experimentally, the phase compatibility results in a dramatic drop in thermal hysteresis and gives rise to very stable functional properties over cycling. Here, we investigate the microstructures observed in Ti50Ni50-xPdx alloys that undergo a cubic to orthorhombic martensitic transformation using a three-dimensional phase field approach. We will show that the simulation results are in very good agreement with transmission electron microscopy observations. However, the understanding of the drop in thermal hysteresis requires the coupling of phase transformation with plastic activity. We will discuss this point within the framework of thermoelasticity, which is a generic feature of the martensitic transformation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712629]  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000305363700053 Publication Date 2012-05-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 11 Open Access  
  Notes Approved Most recent IF: 2.068; 2012 IF: 2.210  
  Call Number UA @ lucian @ c:irua:100310 Serial 2919  
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Author Bogaerts, A.; Gijbels, R. doi  openurl
  Title Role of sputtered Cu atoms and ions in a direct current glow discharge: combined fluid and Monte Carlo model Type A1 Journal article
  Year 1996 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 79 Issue 3 Pages 1279-1286  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos A1996TT92200011 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.183 Times cited 81 Open Access  
  Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 #  
  Call Number UA @ lucian @ c:irua:16239 Serial 2920  
Permanent link to this record
 
 
Author Bogaerts, A.; Gijbels, R. doi  openurl
  Title Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description Type A1 Journal article
  Year 1999 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 86 Issue 8 Pages 4124-4133  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (down) American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000082840300009 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 50 Open Access  
  Notes Approved Most recent IF: 2.068; 1999 IF: 2.275  
  Call Number UA @ lucian @ c:irua:28322 Serial 2923  
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