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Author Neek-Amal, M.; Beheshtian, J.; Shayeganfar, F.; Singh, S.K.; Los, J.H.; Peeters, F.M. url  doi
openurl 
  Title Spiral graphone and one-sided fluorographene nanoribbons Type A1 Journal article
  Year 2013 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 87 Issue 7 Pages 075448-8  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The instability of a free-standing one-sided hydrogenated/fluorinated graphene nanoribbon, i.e., graphone/fluorographene, is studied using ab initio, semiempirical, and large-scale molecular dynamics simulations. Free-standing semi-infinite armchairlike hydrogenated/fluorinated graphene (AC-GH/AC-GF) and boatlike hydrogenated/fluorinated graphene (B-GH/B-GF) (nanoribbons which are periodic along the zigzag direction) are unstable and spontaneously transform into spiral structures. We find that rolled, spiral B-GH and B-GF are energetically more favorable than spiral AC-GH and AC-GF which is opposite to the double-sided flat hydrogenated/fluorinated graphene, i.e., graphane/fluorographene. We found that the packed, spiral structures exhibit an unexpected localized highest occupied molecular orbital and lowest occupied molecular orbital at the edges with increasing energy gap during rolling. These rolled hydrocarbon structures are stable beyond room temperature up to at least T = 1000 K within our simulation time of 1 ns. DOI: 10.1103/PhysRevB.87.075448  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000315481800005 Publication Date 2013-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 14 Open Access  
  Notes ; We thank A. Sadeghi, M. R. Ejtehadi, and J. Amini for their useful comments. This work is supported by the ESF EuroGRAPHENE project CONGRAN and the Flemish Science Foundation (FWO-Vl). M.N.-A. is supported by a EU-Marie Curie IIF fellowship program Grant No. 299855. ; Approved Most recent IF: 3.836; 2013 IF: 3.664  
  Call Number UA @ lucian @ c:irua:107654 Serial 3106  
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Author Abakumov, A.M.; Tsirlin, A.A.; Perez-Mato, J.M.; Petřiček, V.; Rosner, H.; Yang, T.; Greenblatt, M. url  doi
openurl 
  Title Spiral ground state against ferroelectricity in the frustrated magnet BiMnFe2O6 Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 83 Issue 21 Pages 214402-214402,10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The spiral magnetic structure and underlying spin lattice of BiMnFe2O6 are investigated by low-temperature neutron powder diffraction and density functional theory band structure calculations. In spite of the random distribution of the Mn3+ and Fe3+ cations, this centrosymmetric compound undergoes a transition into an incommensurate antiferromagnetically ordered state below TN≃220 K. The magnetic structure is characterized by the propagation vector k=[0,β,0] with β≃0.14 and the P221211′(0β0)0s0s magnetic superspace symmetry. It comprises antiferromagnetic helixes propagating along the b axis. The magnetic moments lie in the ac plane and rotate about π(1+β)≃204.8-deg angle between the adjacent magnetic atoms along b. The spiral magnetic structure arises from the peculiar frustrated arrangement of exchange couplings in the ab plane. The antiferromagnetic coupling along the c axis cancels the possible electric polarization and prevents ferroelectricity in BiMnFe2O6.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000291197400001 Publication Date 2011-06-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 12 Open Access  
  Notes Approved Most recent IF: 3.836; 2011 IF: 3.691  
  Call Number UA @ lucian @ c:irua:90080 Serial 3107  
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Author Elmonov, A.A.; Yusupov, M.S.; Dzhurakhalov, A.A.; Bogaerts, A. openurl 
  Title Sputtering of Si(001) and SiC(001) by grazing ion bombardment Type P1 Proceeding
  Year 2008 Publication Abbreviated Journal  
  Volume Issue Pages 209-213  
  Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E(0) = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue 84 Edition  
  ISSN 978-86-80019-27-7 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95704 Serial 3112  
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Author Fang, C.M.; van Huis, M.A.; Thijsse, B.J.; Zandbergen, H.W. url  doi
openurl 
  Title Stability and crystal structures of iron carbides : a comparison between the semi-empirical modified embedded atom method and quantum-mechanical DFT calculations Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 85 Issue 5 Pages 054116-054116,7  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Iron carbides play a crucial role in steel manufacturing and processing and to a large extent determine the physical properties of steel products. The modified embedded atom method (MEAM) in combination with Lee's Fe-C potential is a good candidate for molecular dynamics simulations on larger Fe-C systems. Here, we investigate the stability and crystal structures of pure iron and binary iron carbides using MEAM and compare them with the experimental data and quantum-mechanical density functional theory calculations. The analysis shows that the Fe-C potential gives reasonable results for the relative stability of iron and iron carbides. The performance of MEAM for the prediction of the potential energy and the calculated lattice parameters at elevated temperature for pure iron phases and cementite are investigated as well. The conclusion is that Lee's MEAM Fe-C potential provides a promising basis for further molecular dynamics simulations of Fe-C alloys and steels at lower temperatures (up to 800 K).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000300931900004 Publication Date 2012-02-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 18 Open Access  
  Notes Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:97201 Serial 3117  
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Author Fang, C.M.; van Huis, M.A.; Zandbergen, H.W. pdf  doi
openurl 
  Title Stability and structures of the CFCC-TmC phases : a first-principles study Type A1 Journal article
  Year 2012 Publication Computational materials science Abbreviated Journal Comp Mater Sci  
  Volume 51 Issue 1 Pages 146-150  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The η-M6C, γ-M23C6, and π-M11C2 phases (M = Cr, Mn and Fe) have complex cubic lattices with lattice parameters of approximately 1.0 nm. They belong to the CFCC-TmC family (complex face-centered cubic transition metal carbides), display a rich variety of crystal structures, and play in important role in iron alloys and steels. Here we show that first-principles calculations predict high stability for the γ-M23C6 and η-M6C phases, and instability for the π-M11C2 phases, taking into account various compositional and structural possibilities. The calculations also show a wide variety in magnetic properties. The Cr-containing phases were found to be non-magnetic and the Fe-phases to be ferromagnetic, while the Mn-containing phases were found to be either ferrimagnetic or non-magnetic. Details of the local atomic structures, and the formation and stability of these precipitates in alloys are discussed.  
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  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000296214300020 Publication Date 2011-08-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0927-0256; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.292 Times cited 18 Open Access  
  Notes Approved Most recent IF: 2.292; 2012 IF: 1.878  
  Call Number UA @ lucian @ c:irua:93277 Serial 3119  
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Author Govaerts, K.; Sluiter, M.H.F.; Partoens, B.; Lamoen, D. url  doi
openurl 
  Title Stability of Sb-Te layered structures : first-principles study Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 85 Issue 14 Pages 144114-144114,8  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)  
  Abstract Using an effective one-dimensional cluster expansion in combination with first-principles electronic structure calculations we have studied the energetics and electronic properties of Sb-Te layered systems. For a Te concentration between 0 and 60 at. % an almost continuous series of metastable structures is obtained consisting of consecutive Sb bilayers next to consecutive Sb2Te3 units, with the general formula (Sb-2)(n)(Sb2Te3)(m) (n, m = 1,2, ... ). Between 60 and 100 at.% no stable structures are found. We account explicitly for the weak van derWaals bonding between Sb bilayers and Sb2Te3 units by using a recently developed functional, which strongly improves the interlayer bonding distances. At T = 0 K, no evidence is found for the existence of two separate single-phase regions delta and gamma and a two-phase region delta + gamma. Metastable compounds with a Te concentration between 0 and 40 at. % are semimetallic, whereas compounds with a Te concentration between 50 and 60 at. % are semiconducting. Compounds with an odd number of Sb layers are metallic and have a much higher formation energy than those with an even number of consecutive Sb layers, thereby favoring the formation of Sb bilayers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000303115400004 Publication Date 2012-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 14 Open Access  
  Notes Iwt; Fwo Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:98255 Serial 3129  
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Author Marmorkos, I.K.; Matulis, A.; Peeters, F.M. openurl 
  Title Stability of the superconducting vortex structure around a magnetic dot Type A3 Journal article
  Year 1995 Publication Physics of low-dimensional structures Abbreviated Journal  
  Volume 10/11 Issue Pages 77-86  
  Keywords A3 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:13036 Serial 3133  
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Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.; Moshchalkov, V.V. doi  openurl
  Title Stability of vortex-antivortex “molecules” in mesoscopic superconducting triangles Type A1 Journal article
  Year 2005 Publication Abbreviated Journal  
  Volume Issue Pages 191-196  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract We have revealed thermodynamically stable vortex-antivortex configurations in mesoscopic type I superconducting equilateral triangles. The revealed effect is explained by two factors: (i) vortex confinement in mesoscopic triangles and (ii) appearance of the vortex-antivortex repulsion in mesoscopic type I superconductor triangles in the vicinity of the dual point. The stability of the obtained solutions is examined as a function of material and external parameters – the Ginzburg-Landau parameter K and temperature – as well as a function of a distortion of the sample's shape. The vortex-antivortex. “molecule” turns out to be stable in a wide range of the parameters that makes it possible its experimental visualization.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000234363700030 Publication Date 2007-11-30  
  Series Editor Series Title Abbreviated Series Title 3rd International Symposium on Mesoscopic Superconductivity and, Spintronics, MAR 01-04, 2004, Atsug  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:103704 Serial 3134  
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Author Berdiyorov, G.R.; Neek-Amal, M.; Peeters, F.M.; van Duin, A.C.T. url  doi
openurl 
  Title Stabilized silicene within bilayer graphene : a proposal based on molecular dynamics and density-functional tight-binding calculations Type A1 Journal article
  Year 2014 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 89 Issue 2 Pages 024107-6  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Freestanding silicene is predicted to display comparable electronic properties as graphene. However, the yet synthesized silicenelike structures have been only realized on different substrates which turned out to exhibit versatile crystallographic structures that are very different from the theoretically predicted buckled phase of freestanding silicene. This calls for a different approach where silicene is stabilized using very weakly interacting surfaces. We propose here a route by using graphene bilayer as a scaffold. The confinement between the flat graphene layers results in a planar clustering of Si atoms with small buckling, which is energetically unfavorable in vacuum. Buckled hexagonal arrangement of Si atoms similar to freestanding silicene is observed for large clusters, which, in contrast to Si atoms on metallic surfaces, is only very weakly van der Waals coupled to the graphene layers. These clusters are found to be stable well above room temperature. Our findings, which are supported by density-functional tight-binding calculations, show that intercalating bilayer graphene with Si is a favorable route to realize silicene.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000332226200002 Publication Date 2014-01-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 43 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem Foundation of the Flemish Government. M.N.-A. was supported by the EU-Marie Curie IIF postdoc Fellowship/299855. One of us (F. M. P.) acknowledges discussions with Professor Hongjun Gao. G. R. B acknowledges the support of the King Fahd University of Petroleum and Minerals, Saudi Arabia, under the TPRG131-CS-15 DSR project. A.C.T.vD acknowledges funding from AFOSR Grants No. FA9550-10-1-0563 and No. FA9550-11-1-0158. ; Approved Most recent IF: 3.836; 2014 IF: 3.736  
  Call Number UA @ lucian @ c:irua:115829 Serial 3140  
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Author Avetisyan, A.A.; Partoens, B.; Peeters, F.M. url  doi
openurl 
  Title Stacking order dependent electric field tuning of the band gap in graphene multilayers Type A1 Journal article
  Year 2010 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 81 Issue 11 Pages 115432,1-115432,7  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and the Fermi energy of three and four layer graphene systems. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We found that the gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. Also we predict that for four layers of graphene the energy gap strongly depends on the choice of stacking, and we found that the gap for the different types of stacking is much larger as compared to the case of Bernal stacking. Trigonal warping changes the size of the induced electronic gap by approximately 30% for intermediate and large values of the induced electron density.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000276248800145 Publication Date 2010-03-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 142 Open Access  
  Notes ; ; Approved Most recent IF: 3.836; 2010 IF: 3.774  
  Call Number UA @ lucian @ c:irua:82274 Serial 3148  
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Author Vodolazov, D.Y.; Baelus, B.J.; Peeters, F.M. url  doi
openurl 
  Title Stationary-phase slip state in quasi-one-dimensional rings Type A1 Journal article
  Year 2002 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 66 Issue 5 Pages 054531-54536  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The nonuniform superconducting state in a ring in which the order parameter vanishing at one point is studied. This state is characterized by a jump of the phase by pi at the point where the order parameter becomes zero. In uniform rings such a state is a saddle-point state and consequently unstable. However, for nonuniform rings with, e.g., variations of geometrical or physical parameters or with attached wires this state can be stabilized and may be realized experimentally.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000177873000137 Publication Date 2002-10-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 29 Open Access  
  Notes Approved Most recent IF: 3.836; 2002 IF: NA  
  Call Number UA @ lucian @ c:irua:104147 Serial 3152  
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Author Sahin, H.; Sivek, J.; Li, S.; Partoens, B.; Peeters, F.M. url  doi
openurl 
  Title Stone-Wales defects in silicene : formation, stability, and reactivity of defect sites Type A1 Journal article
  Year 2013 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 88 Issue 4 Pages 045434-45436  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract During the synthesis of ultrathin materials with hexagonal lattice structure Stone-Wales (SW) type of defects are quite likely to be formed and the existence of such topological defects in the graphenelike structures results in dramatic changes of their electronic and mechanical properties. Here we investigate the formation and reactivity of such SW defects in silicene. We report the energy barrier for the formation of SW defects in freestanding (similar to 2.4 eV) and Ag(111)-supported (similar to 2.8 eV) silicene and found it to be significantly lower than in graphene (similar to 9.2 eV). Moreover, the buckled nature of silicene provides a large energy barrier for the healing of the SW defect and therefore defective silicene is stable even at high temperatures. Silicene with SW defects is semiconducting with a direct band gap of 0.02 eV and this value depends on the concentration of defects. Furthermore, nitrogen substitution in SW-defected silicene shows that the defect lattice sites are the least preferable substitution locations for the N atoms. Our findings show the easy formation of SW defects in silicene and also provide a guideline for band gap engineering in silicene-based materials through such defects.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000322113300007 Publication Date 2013-07-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 93 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem foundation of the Flemish government. Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure), and HPC infrastructure of the University of Antwerp (CalcUA) a division of the Flemish Supercomputer Center (VSC), which is funded by the Hercules foundation. H.S. is supported by a FWO Pegasus Marie Curie Fellowship. ; Approved Most recent IF: 3.836; 2013 IF: 3.664  
  Call Number UA @ lucian @ c:irua:109805 Serial 3162  
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Author Arsoski, V.V.; Tadić, M.Z.; Peeters, F.M. url  doi
openurl 
  Title Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In(Ga)As/GaAs ringlike quantum dots Type A1 Journal article
  Year 2013 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 87 Issue 8 Pages 085314-14  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with a ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum mechanical model is employed to determine the strain distribution, and the single-band envelope function approach is adopted to compute the electron states. The hole states are determined by the axially symmetric multiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained from an exact diagonalization. We found that the presence of the inner layer covering the ring opening enhances the excitonic Aharonov-Bohm (AB) oscillations. The reason is that the hole becomes mainly localized in the inner part of the quantum dot due to strain, whereas the electron resides mainly inside the ring-shaped rim. Interestingly, larger AB oscillations are found in the analyzed quantum dot than in a fully opened quantum ring of the same width. Comparison with the unstrained ringlike quantum dot shows that the amplitude of the excitonic Aharonov-Bohm oscillations are almost doubled in the presence of strain. The computed oscillations of the exciton energy levels are comparable in magnitude to the oscillations measured in recent experiments. DOI: 10.1103/PhysRevB.87.085314  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000315278000003 Publication Date 2013-02-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 18 Open Access  
  Notes ; This work was supported by the EU NoE: SANDiE, the Ministry of Education, Science, and Technological Development of Serbia, and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 3.836; 2013 IF: 3.664  
  Call Number UA @ lucian @ c:irua:107656 Serial 3165  
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Author Neek-Amal, M.; Peeters, F.M. url  doi
openurl 
  Title Strain-engineered graphene through a nanostructured substrate : 1 : deformations Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 85 Issue 19 Pages 195445-195445,11  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using atomistic simulations we investigate the morphological properties of graphene deposited on top of a nanostructured substrate. Sinusoidally corrugated surfaces, steps, elongated trenches, one-dimensional and cubic barriers, spherical bubbles, Gaussian bumps, and Gaussian depressions are considered as support structures for graphene. The graphene-substrate interaction is governed by van der Waals forces and the profile of the graphene layer is determined by minimizing the energy using molecular dynamics simulations. Based on the obtained optimum configurations, we found that (i) for graphene placed over sinusoidally corrugated substrates with corrugation wavelengths longer than 2 nm, the graphene sheet follows the substrate pattern while for supported graphene it is always suspended across the peaks of the substrate, (ii) the conformation of graphene to the substrate topography is enhanced when increasing the energy parameter in the van der Waals model, (iii) the adhesion of graphene into the trenches depends on the width of the trench and on the graphene's orientation, i. e., in contrast to a small-width (3 nm) nanoribbon with armchair edges, the one with zigzag edges follows the substrate profile, (iv) atomic-scale graphene follows a Gaussian bump substrate but not the substrate with a Gaussian depression, and (v) the adhesion energy due to van der Waals interaction varies in the range [0.1-0.4] J/m(2).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000304394800012 Publication Date 2012-05-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 62 Open Access  
  Notes ; We thank L. Covaci and S. Costamagna for valuable comments. We acknowledge M. Zarenia, M. R. Masir and D. Nasr for fruitful discussions. This work was supported by the Flemish Science Foundation (FWO-Vl) and ESF EUROCORE program EuroGRAPHENE: CONGRAN. ; Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:98942 Serial 3166  
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Author Neek-Amal, M.; Peeters, F.M. url  doi
openurl 
  Title Strain-engineered graphene through a nanostructured substrate : 2 : pseudomagnetic fields Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 85 Issue 19 Pages 195446-195446,6  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The strain-induced pseudomagnetic field in supported graphene deposited on top of a nanostructured substrate is investigated by using atomistic simulations. A step, an elongated trench, a one-dimensional barrier, a spherical bubble, a Gaussian bump, and a Gaussian depression are considered as support structures for graphene. From the obtained optimum configurations we found very strong induced pseudomagnetic fields which can reach up to similar to 1000 T due to the strain-induced deformations in the supported graphene. Different magnetic confinements with controllable geometries are found by tuning the pattern of the substrate. The resulting induced magnetic fields for graphene on top of a step, barrier, and trench are calculated. In contrast to the step and trench the middle part of graphene on top of a barrier has zero pseudomagnetic field. This study provides a theoretical background for designing magnetic structures in graphene by nanostructuring substrates. We found that altering the radial symmetry of the deformation changes the sixfold symmetry of the induced pseudomagnetic field.  
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  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000304394800013 Publication Date 2012-05-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 31 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the ESF EUROCORE program EuroGRAPHENE: CONGRAN. ; Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:98943 Serial 3167  
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Author Verberck, B.; Partoens, B.; Peeters, F.M.; Trauzettel, B. url  doi
openurl 
  Title Strain-induced band gaps in bilayer graphene Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 85 Issue 12 Pages 125403-125403,10  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the inequivalence of the A and B atoms is enhanced by the application of perpendicular strain epsilon(zz), which provides a physical mechanism for opening a band gap, most effectively obtained when pulling the two graphene layers apart. In addition, perpendicular strain introduces electron-hole asymmetry and can result in linear electronic dispersion near the K point. Our findings suggest experimental means for strain-engineered band gaps in bilayer graphene.  
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  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000301113200005 Publication Date 2012-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 53 Open Access  
  Notes ; The authors would like to acknowledge O. Leenaerts, E. Mariani, K. H. Michel, and J. Schelter for useful discussions. B. V. was financially supported by the Flemish Science Foundation (FWO-Vl). This work was financially supported by the ESF program EuroGraphene under projects CONGRAN and ENTS as well as by the DFG. ; Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:97181 Serial 3168  
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Author Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. pdf  doi
openurl 
  Title Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 Type A1 Journal article
  Year 2012 Publication Nano Research Abbreviated Journal Nano Res  
  Volume 5 Issue 1 Pages 43-48  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000299085200006 Publication Date 2011-11-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1998-0124;1998-0000; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 7.354 Times cited 407 Open Access  
  Notes Approved Most recent IF: 7.354; 2012 IF: 7.392  
  Call Number UA @ lucian @ c:irua:96262 Serial 3169  
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Author Vodolazov, D.Y.; Peeters, F.M. doi  openurl
  Title Strong influence of nonlocal nonequilibrium effects on the dynamics of the order parameter in a phase-slip center: ring studies Type A1 Journal article
  Year 2010 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 81 Issue 18 Pages 184521,1-184521,7  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We study the influence of the inelastic relaxation time τ̃E of the quasiparticle distribution function f(E) on the phase slip process in quasi-one-dimensional superconducting rings at a temperature close to the critical temperature Tc. We find that the initial time of growth of the order parameter |Δ| in the phase slip core after the phase slip is a nonmonotonic function of τ̃E which has a maximum at τ̃E≃τ̃GL=πℏ/8kB(Tc−T) and has a tendency to saturate for large τ̃E⪢τ̃GL. The effective heating of the electron subsystem due to the increase in |Δ| in the phase slip center together with the above effect result in a nonmonotonic dependence of the number of subsequent phase slips on τ̃E in rings of relatively large radius (in which each phase slip reduces the current density to a small fraction of its initial value). During the phase slip process the order parameter distribution has two peaks near the phase slip core due to the diffusion of the nonequilibrium quasiparticles from that region.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000278141800100 Publication Date 2010-05-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 5 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). D.Y.V. also acknowledges support from the Russian Foundation for Basic Research, Federal Target Programme “Scientific and scientific-pedagogical personnel of innovative Russia in 2009-2013” and Dynasty Foundation. ; Approved Most recent IF: 3.836; 2010 IF: 3.774  
  Call Number UA @ lucian @ c:irua:83305 Serial 3182  
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Author Leon, M.; Merino, J.M.; Van Tendeloo, G. openurl 
  Title Structural analysis of CuInSe2, CuInTe2 and CuInSeTe by electron microscopy and X-ray techniques Type A1 Journal article
  Year 2009 Publication Acta Microscopica Abbreviated Journal Acta Microsc  
  Volume 18 Issue 2 Pages 128-138  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A structural research of semiconductor compounds for photovoltaic applications CuInSe(2), CuInTe(2) and CuInSeTe, has been done by x-ray diffraction using the Rietveld analysis of experimental diagrams. Besides, in the CuInSeTe compound the electron diffraction and high resolution microscopy techniques have been used. All the studied compounds were polycrystals with chalcopyrite tetragonal structure, I. 42d. A model for the atomic occupancy in each compound has been proposed, and the results have been compared analyzing the Se-Te substitution effect.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0798-4545 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.07 Times cited Open Access  
  Notes Approved Most recent IF: 0.07; 2009 IF: NA  
  Call Number UA @ lucian @ c:irua:95679 Serial 3189  
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Author Yandouzi, M.; Pauwels, B.; Schryvers, D.; van Swygenhoven, H.; Van Tendeloo, G. openurl 
  Title Structural characterisation of nanostructured Ni3Al processed by inert gas condensation Type A3 Journal article
  Year 2003 Publication Defects and diffusion in metals Abbreviated Journal  
  Volume 213/215 Issue Pages 19-30  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:48777 Serial 3215  
Permanent link to this record
 

 
Author Kolen'ko, Y.V.; Kovnir, K.A.; Gavrilov, A.I.; Garshev, A.V.; Meskin, P.E.; Churagulov, B.R.; Bouchard, M.; Colbeau-Justin, C.; Lebedev, O.I.; Van Tendeloo, G.; Yoshimura, M. pdf  doi
openurl 
  Title Structural, textural, and electronic properties of a nanosized mesoporous ZnxTi1-xO2-x solid solution prepared by a supercritical drying route Type A1 Journal article
  Year 2005 Publication Journal of physical chemistry B Abbreviated Journal J Phys Chem B  
  Volume 109 Issue 43 Pages 20303-20309  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000232959800037 Publication Date 2005-10-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1520-6106;1520-5207; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.177 Times cited 34 Open Access  
  Notes Approved Most recent IF: 3.177; 2005 IF: 4.033  
  Call Number UA @ lucian @ c:irua:54886 Serial 3264  
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Author Galván Moya, J.E.; Nelissen, K.; Peeters, F.M. pdf  doi
openurl 
  Title Structural transitions in vertically and horizontally coupled parabolic channels of Wigner crystals Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 86 Issue 18 Pages 184102-184109  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Structural phase transitions in two vertically or horizontally coupled channels of strongly interacting particles are investigated. The particles are free to move in the x direction but are confined by a parabolic potential in the y direction. They interact with each other through a screened power-law potential (r(-n)e(-r/lambda)). In vertically coupled systems, the channels are stacked above each other in the direction perpendicular to the (x, y) plane, while in horizontally coupled systems both channels are aligned in the confinement direction. Using Monte Carlo (MC) simulations we obtain the ground-state configurations and the structural transitions as a function of the linear particle density and the separation between the channels. At zero temperature, the vertically coupled system exhibits a rich phase diagram with continuous and discontinuous transitions. On the other hand, the horizontally coupled system exhibits only a very limited number of phase transitions due to its symmetry. Further, we calculated the normal modes for the Wigner crystals in both cases. From MC simulations, we found that in the case of vertically coupled systems, the zigzag transition is only possible for low densities. A Ginzburg-Landau theory for the zigzag transition is presented, which predicts correctly the behavior of this transition from which we interpret the structural phase transition of the Wigner crystal through the reduction of the Brillouin zone.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000310683600002 Publication Date 2012-11-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 6 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:105150 Serial 3271  
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Author Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Hayashi, N.; Terashima, T.; Takano, M. pdf  doi
openurl 
  Title Structure and microstructure of epitaxial SrnFenO3n-1 films Type A1 Journal article
  Year 2004 Publication Philosophical magazine Abbreviated Journal Philos Mag  
  Volume 84 Issue 36 Pages 3825-3841  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Thin films of SrFeO3-x (0 less than or equal to x less than or equal to 0.5) (SFO) grown on a (LaAlO3)(0.3) (SrAl0.5Ta0.5O3)(0.7) (LSAT) substrate by Pulsed laser deposition have been structurally investigated by electron diffraction and high resolution transmission electron microscopy for different post-deposition oxygen treatments. During the deposition and post-growth oxidation, the oxygen-reduced SFO films accept extra oxygen along the tetrahedral layers to minimize the elastic strain energy. The oxidation process stops at a concentration SFO2.875 and/or SFO2.75 because a zero misfit with the LSAT substrate is reached. A possible growth mechanism and phase transition mechanism are suggested. The non-oxidized films exhibit twin boundaries having a local perovskite-type structure with a nominal composition close to SFO3.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000225854700001 Publication Date 2005-01-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1478-6435;1478-6443; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.505 Times cited 4 Open Access  
  Notes reprint Approved Most recent IF: 1.505; 2004 IF: 1.167  
  Call Number UA @ lucian @ c:irua:54755 Serial 3287  
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Author Lebedev, O.I.; Van Tendeloo, G.; Abakumov, A.M.; Shpanchenko, R.V.; Rozova, M.G.; Antipov, E.V. openurl 
  Title Structure of Y123 and Y247 fluorinated phases by HREM Type A1 Journal article
  Year 1998 Publication Electron microscopy: vol. 3 Abbreviated Journal  
  Volume Issue Pages 297-298  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000077020300142 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:25673 Serial 3315  
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Author Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Verhoeven, M.A.J.; Rijnders, A.J.H.M.; Blank, D.H.A. pdf  openurl
  Title Study of ramp-type Josephson junctions by HREM Type A1 Journal article
  Year 1997 Publication Electronic Applications; Vol 2: Large Scale And Power Applications Abbreviated Journal  
  Volume Issue 158 Pages 49-52  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Structural aspects of ramp-type Josephson junctions based on REBa2Cu3O7-delta high-T-c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa2Cu3-xGaxO7-delta. The ramp-geometry depends on the etching conditions. High levels of Ga doping (x>0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000071955200012 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0487-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:102941 Serial 3333  
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Author Vansweevelt, R.; Mortet, V.; D' Haen, J.; Ruttens, bart; van Haesendonck, C.; Partoens, B.; Peeters, F.M.; Wagner, P. doi  openurl
  Title Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes Type A1 Journal article
  Year 2011 Publication Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 208 Issue 6 Pages 1252-1258  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000292945800008 Publication Date 2011-02-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 8 Open Access  
  Notes ; The authors gratefully acknowledge the support by FWO – Research Foundation Flanders (project G.0159.07 “Structural and electronic properties of biologically modified, graphene-based layers”), by the Federal Belgian Interuniversity Attraction Poles Programme BELSPO (project TAP VI P6/42 “Quantum effects in clusters and nanowires”) and by the Methusalem network “NANO – Antwerp-Hasselt,” funded by the Flemish Community. Technical assistance by Stoffel D. Janssens (magnet calibration and software development), Dr. Hong Yin (AFM-based thickness studies), Dr. Ronald Thoelen (data analysis), and Prof. Hans-Gerd Boyen (XPS spectroscopy) is greatly appreciated. ; Approved Most recent IF: 1.775; 2011 IF: 1.463  
  Call Number UA @ lucian @ c:irua:91941 Serial 3343  
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Author Zarenia, M.; Leenaerts, O.; Partoens, B.; Peeters, F.M. url  doi
openurl 
  Title Substrate-induced chiral states in graphene Type A1 Journal article
  Year 2012 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 86 Issue 8 Pages 085451  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Unidirectional chiral states are predicted in single layer graphene which originate from the breaking of the sublattice symmetry due to an asymmetric mass potential. The latter can be created experimentally using boron-nitride (BN) substrates with a line defect (B-B or N-N) that changes the induced mass potential in graphene. Solving the Dirac-Weyl equation, the obtained energy spectrum is compared with the one calculated using ab initio density functional calculations. We found that these one-dimensional chiral states are very robust and they can even exist in the presence of a small gap between the mass regions. In the latter case additional bound states are found that are topologically different from those chiral states.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000308005600015 Publication Date 2012-08-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 41 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the European Science Foundation (ESF) under the EUROCORES Program: EuroGRAPHENE (project CONGRAN). ; Approved Most recent IF: 3.836; 2012 IF: 3.767  
  Call Number UA @ lucian @ c:irua:101100 Serial 3347  
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Author Devreese, J.T.; Fomin, V.M.; Misko, V.R.; Moshchalkov, V.V. openurl 
  Title Superconducting mesoscopic square loops: phase boundaries and magnetization Type A1 Journal article
  Year 1998 Publication Abbreviated Journal  
  Volume 1/2 Issue Pages 33-38  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000072938400006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21901 Serial 3355  
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Author Baelus, B.J.; Yampolskii, S.V.; Peeters, F.M.; Montevecchi, E.; Indekeu, J.O. url  doi
openurl 
  Title Superconducting properties of mesoscopic cylinders with enhanced surface superconductivity Type A1 Journal article
  Year 2002 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 65 Issue 2 Pages 024510-10  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The superconducting state of an infinitely long superconducting cylinder surrounded by a medium which enhances its superconductivity near the boundary is studied within the nonlinear Ginzburg-Landau theory. This enhancement can be due to the proximity of another superconductor or due to surface treatment. Quantities such as the free energy, the magnetization and the Cooper-pair density are calculated. Phase diagrams are obtained to investigate how the critical field and the critical temperature depend on this surface enhancement for different values of the Ginzburg-Landau parameter kappa. Increasing the superconductivity near the surface leads to higher critical fields and critical temperatures. For small cylinder diameters only giant vortex states nucleate, while for larger cylinders multivortices can nucleate. The stability of these multivortex states also depends on the surface enhancement. For type-I superconductors we found the remarkable result that for a range of values of the surface extrapolation length the superconductor can transit from the Meissner state into superconducting states with vorticity L > 1. Such a behavior is not found for the case of large kappa, i.e., type-II superconductivity,  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000173213100099 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.836; 2002 IF: NA  
  Call Number UA @ lucian @ c:irua:103890 Serial 3363  
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Author Covaci, L.; Peeters, F.M. url  doi
openurl 
  Title Superconducting proximity effect in graphene under inhomogeneous strain Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 84 Issue 24 Pages 241401-241401,4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The interplay between quantum Hall states and Cooper pairs is usually hindered by the suppression of the superconducting state due to the strong magnetic fields needed to observe the quantum Hall effect. From this point of view, graphene is special since it allows the creation of strong pseudomagnetic fields due to strain. We show that in a Josephson junction made of strained graphene, Cooper pairs will diffuse into the strained region. The pair correlation function will be sublattice polarized due to the polarization of the local density of states in the zero pseudo-Landau level. We uncover two regimes: (1) one in which the cyclotron radius is larger than the junction length, in which case the supercurrent will be enhanced, and (2) the long junction regime where the supercurrent is strongly suppressed because the junction becomes an insulator. In the latter case quantized Hall states form and Andreev scattering at the normal/superconducting interface will induce edge states. Our numerical calculation has become possible due to an extension of the Chebyshev-Bogoliubovde Gennes method to computations on video cards (GPUs).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication (down) Editor  
  Language Wos 000297766600003 Publication Date 2011-12-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 27 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Euro GRAPHENE project CONGRAN. Discussions with Andrey Chaves are gratefully acknowledged. ; Approved Most recent IF: 3.836; 2011 IF: 3.691  
  Call Number UA @ lucian @ c:irua:93962 Serial 3364  
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