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“Strong anisotropic optical conductivity in two-dimensional puckered structures : the role of the Rashba effect”. Saberi-Pouya S, Vazifehshenas T, Salavati-Fard T, Farmanbar M, Peeters FM, Physical review B 96, 075411 (2017). http://doi.org/10.1103/PHYSREVB.96.075411
Abstract: within the Kubo formalism. We show that the anisotropic Rashba effect caused by an external field significantly changes the magnitude of the spin splitting. Furthermore, we obtain an analytical expression for the longitudinal optical conductivity associated with interband transitions as a function of the frequency for arbitrary polarization angle. We find that the diagonal components of the optical conductivity tensor are direction dependent and the optical absorption spectrum exhibits a strongly anisotropic absorption window. The height and width of this absorption window are very sensitive to the anisotropy of the system. While the height of absorption peak increases with increasing effective mass anisotropy ratio, the peak intensity is larger when the light polarization is along the armchair direction. Moreover, the absorption peak width becomes broader as the density-of-states mass or Rashba interaction is enhanced. These features in the optical absorption spectrum can be used to determine parameters relevant for spintronics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 16
DOI: 10.1103/PHYSREVB.96.075411
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“Tight-binding model investigation of the biaxial strain induced topological phase transition in GeCH3”. Rezaei M, Sisakht ET, Fazileh F, Aslani Z, Peeters FM, Physical review B 96, 085441 (2017). http://doi.org/10.1103/PHYSREVB.96.085441
Abstract: We propose a tight-binding (TB) model, that includes spin-orbit coupling (SOC), to describe the electronic properties of methyl-substituted germanane (GeCH3). This model gives an electronic spectrum in agreement with first principle results close to the Fermi level. Using the Z(2) formalism, we show that a topological phase transition from a normal insulator (NI) to a quantum spin Hall (QSH) phase occurs at 11.6% biaxial tensile strain. The sensitivity of the electronic properties of this system on strain, in particular its transition to the topological insulating phase, makes it very attractive for applications in strain sensors and other microelectronic applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PHYSREVB.96.085441
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“Anomalous Hall effect in magnetic topological insulators : semiclassical framework”. Sabzalipour A, Partoens B, Physical review B 100, 035419 (2019). http://doi.org/10.1103/PHYSREVB.100.035419
Abstract: The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semiclassical framework, all three contributions to the AHE, the Berry curvature effect, the side jump effect and the skew scattering effects are systematically treated, and analytical expressions for the conductivities are obtained in terms of the Fermi level, the spatial orientation of the surface magnetization and the concentration of magnetic and nonmagnetic impurities. We demonstrate that the AHE can change sign by altering the orientation of the surface magnetization, the concentration of the impurities and also the position of the Fermi level, in agreement with recent experimental observations. We show how each contribution to the AHE, or even the whole AHE, can be turned off by properly adjusting the given parameters. For example, one can turn off the anomalous hall conductivity in a system with in-plane magnetization by pushing the system into the fully metallic regime.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PHYSREVB.100.035419
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“Quantum and transport mobilities of a Na3Bi-based three-dimensional Dirac system”. Yuan HF, Xu W, Zhao XN, Song D, Zhang GR, Xiao YM, Ding L, Peeters FM, Physical review B 99, 235303 (2019). http://doi.org/10.1103/PHYSREVB.99.235303
Abstract: The electronic and transport properties of a three-dimensional (3D) Dirac system are investigated theoretically, which is motivated by recent experimental measurements on quantum and transport mobilities in the 3D Dirac semimetal Na3Bi by J. Xiong et al. [Science 350, 413 (2015); Europhys. Lett. 114, 27002 (2016)]. The electron Hamiltonian is taken from a simplified k center dot p approach. From the obtained electronic band structure and the Fermi energy, we explain why the anomalous effect induced by the chiral anomaly and the Berry curvature in the energy band can be observed experimentally in magnetotransport coefficients in both low-and high-density samples. Moreover, the quantum and transport mobilities are calculated on the basis of the momentum-balance equation derived from a semiclassical Boltzmann equation with the electron-impurity interaction. The quantum and transport mobilities obtained from this study agree both qualitatively and quantitatively with those measured experimentally. We also examine the electron mobilities along different crystal directions in Na3Bi and find them largely anisotropic. The theoretical findings from this work can be helpful in gaining an in-depth understanding of the experimental results and of the basic electronic and transport properties of newly developed 3D Dirac systems.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PHYSREVB.99.235303
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“Reply to “Comment on `Excitons, trions, and biexcitons in transition-metal dichalcogenides: Magnetic-field dependence'””. Van der Donck M, Zarenia M, Peeters FM, Physical Review B 101, 127402 (2020). http://doi.org/10.1103/PHYSREVB.101.127402
Abstract: In the Comment, the authors state that the separation of the relative and center of mass variables in our work is not correct. Here we point out that there is a typographical error, i.e., qi instead of -e, in two of our equations which, when corrected, makes the Comment redundant. Within the ansatzes mentioned in our paper all our results are correct, in contrast to the claims of the Comment.
Keywords: Editorial; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.101.127402
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“Tuning the electronic properties of graphene-graphitic carbon nitride heterostructures and heterojunctions by using an electric field”. Bafekry A, Neek-Amal M, Physical Review B 101, 085417 (2020). http://doi.org/10.1103/PHYSREVB.101.085417
Abstract: Integration of graphene-based two-dimensional materials is essential for nanoelectronics applications. Using density-functional theory, we systematically investigate the electronic properties of vertically stacked graphene-graphitic carbon nitrides (GE/GCN). We also studied the covalently lateral stitched graphene-graphitic carbon nitrides (GE-GCN heterojunctions). The effects of perpendicular electric field on the electronic properties of six different heterostructures, i.e., (i) one layer of GE on top of a layer of CnNm with (n, m) = (3,1), (3,4), and (4,3) and (ii) three heterostructures CnNm/Cn'Nm', where (n, m) not equal (n', m') are elucidated. The most important calculated features are (i) the systems GE/C3N4, C3N/C3N4, GE-C3N, GE-C4N3, and C3N-C3N4 exhibit semiconducting characteristics having small band gaps of Delta(0)=20, 250, 100, 100, 80 meV, respectively while (ii) the systems GE/C4N3, C3N/C4N3, and C3N-C4N3 show ferromagnetic-metallic properties. In particular, we found that, in semiconducting heterostructures, the band gap increases nontrivially with increasing the absolute value of the applied perpendicular electric field. This work is useful for designing heterojunctions and heterostructures made of graphene and other two-dimensional materials such as those proposed in recent experiments [X. Liu and M. C. Hersam Sci. Adv. 5, 6444 (2019)].
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 24
DOI: 10.1103/PHYSREVB.101.085417
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“Two-dimensional graphitic carbon nitrides: strain-tunable ferromagnetic ordering”. Bafekry A, Neek-Amal M, Peeters FM, Physical Review B 101, 165407 (2020). http://doi.org/10.1103/PHYSREVB.101.165407
Abstract: Using first-principle calculations, we systematically study strain tuning of the electronic properties of two- dimensional graphitic carbon nitride nanosheets with empirical formula CnNm. We found the following: (i) the ferromagnetic ordered state in the metal-free systems (n, m) = (4,3), (10,9), and (14,12) remains stable in the presence of strain of about 6%. However, the system (9,7) loses its ferromagnetic ordering when increasing strain. This is due to the presence of topological defects in the (9,7) system, which eliminates the asymmetry between spin up and spin down of the p(z) orbitals when strain is applied. (ii) By applying uniaxial strain, a band gap opens in systems which are initially gapless. (iii) In semiconducting systems which have an initial gap of about 1 eV, the band gap is closed with applying uniaxial strain.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 27
DOI: 10.1103/PHYSREVB.101.165407
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“Onset, evolution, and magnetic braking of vortex lattice instabilities in nanostructured superconducting films”. Adami O-A, Jelić, ŽL, Xue C, Abdel-Hafiez M, Hackens B, Moshchalkov VV, Milošević, MV, Van de Vondel J, Silhanek AV, Physical review: B: condensed matter and materials physics 92, 134506 (2015). http://doi.org/10.1103/PhysRevB.92.134506
Abstract: In 1976, Larkin and Ovchinnikov [Zh. Eksp. Teor. Fiz. 68, 1915 (1975) [Sov. Phys.–JETP 41, 960 (1976)]] predicted that vortex matter in superconductors driven by an electrical current can undergo an abrupt dynamic transition from a flux-flow regime to a more dissipative state at sufficiently high vortex velocities. Typically, this transition manifests itself as a large voltage jump at a particular current density, so-called instability current density J∗, which is smaller than the depairing current. By tuning the effective pinning strength in Al films, using an artificial periodic pinning array of triangular holes, we show that a unique and well-defined instability current density exists if the pinning is strong, whereas a series of multiple voltage transitions appear in the relatively weaker pinning regime. This behavior is consistent with time-dependent Ginzburg-Landau simulations, where the multiple-step transition can be unambiguously attributed to the progressive development of vortex chains and subsequently phase-slip lines. In addition, we explore experimentally the magnetic braking effects, caused by a thick Cu layer deposited on top of the superconductor, on the instabilities and the vortex ratchet effect.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.92.134506
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“Superconductivity between standard types: Multiband versus single-band materials”. Vagov A, Shanenko AA, Milošević, MV, Axt VM, Vinokur VM, Aguiar JA, Peeters FM, Physical review B 93, 174503 (2016). http://doi.org/10.1103/PhysRevB.93.174503
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 37
DOI: 10.1103/PhysRevB.93.174503
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“Electrostatics of electron-hole interactions in van der Waals heterostructures”. Cavalcante LSR, Chaves A, Van Duppen B, Peeters FM, Reichman DR, Physical review B 97, 125427 (2018). http://doi.org/10.1103/PhysRevB.97.125427
Abstract: The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 22
DOI: 10.1103/PhysRevB.97.125427
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“Model-based determination of dielectric function by STEM low-loss EELS”. Zhang L, Turner S, Brosens F, Verbeeck J, Physical review : B : condensed matter and materials physics 81, 035102 (2010). http://doi.org/10.1103/PhysRevB.81.035102
Abstract: Dielectric properties of materials are crucial in describing the electromagnetic response of materials. As devices are becoming considerably smaller than the optical wavelength, the conventional measuring methods based on optical response are limited by their spatial resolution. Electron energy loss spectroscopy performed in a scanning transmission electron microscope is a good alternative to obtain the dielectric properties with excellent spatial resolution. Due to the overlap of diffraction discs in scanning transmission electron microscopy, it is difficult to apply conventional experimental settings to suppress retardation losses. In this contribution, a relativistic dielectric model for the loss function is presented which is used in a model based optimization scheme to estimate the complex dielectric function of a material. The method is applied to experiments on bulk diamond and SrTiO3 and shows a good agreement with optical reference data when retardation effects are included. Application of this technique to nanoparticles is possible but several theoretical assumptions made in the model of the loss function are violated and interpretation becomes problematic.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Theory of quantum systems and complex systems
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.81.035102
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“Crystal fields, disorder, and antiferromagnetic short-range order in Yb0.24Sn0.76Ru”. Klimczuk T, Wang CH, Lawrence JM, Xu Q, Durakiewicz T, Ronning F, Llobet A, Trouw F, Kurita N, Tokiwa Y, Lee Ho, Booth CH, Gardner JS, Bauer ED, Joyce JJ, Zandbergen HW, Movshovich R, Cava RJ, Thompson JD;, Physical review : B : condensed matter and materials physics 84, 075152 (2011). http://doi.org/10.1103/PhysRevB.84.075152
Abstract: We report extensive measurements on a new compound (Yb0.24Sn0.76)Ru that crystallizes in the cubic CsCl structure. Valence-band photoemission (PES) and L3 x-ray absorption show no divalent component in the 4f configuration of Yb. Inelastic neutron scattering (INS) indicates that the eight-fold degenerate J-multiplet of Yb3+ is split by the crystalline electric field (CEF) into a Γ7-doublet ground state and a Γ8 quartet at an excitation energy 20 meV. The magnetic susceptibility can be fit very well by this CEF scheme under the assumption that a Γ6-excited state resides at 32 meV; however, the Γ8/Γ6 transition expected at 12 meV was not observed in the INS. The resistivity follows a Bloch-Grüneisen law shunted by a parallel resistor, as is typical of systems subject to phonon scattering with no apparent magnetic scattering. All of these properties can be understood as representing simple local moment behavior of the trivalent Yb ion. At 1 K there is a peak in specific heat that is too broad to represent a magnetic-phase transition, consistent with absence of magnetic reflections in neutron diffraction. On the other hand this peak also is too narrow to represent the Kondo effect in the Γ7-doublet ground state. On the basis of the field dependence of the specific heat, we argue that antiferromagnetic (AF) short-range order (SRO) (possibly coexisting with Kondo physics) occurs at low temperatures. The long-range magnetic order is suppressed because the Yb site occupancy is below the percolation threshold for this disordered compound.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.84.075152
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“Electrical nonlinearity in colossal magnetoresistance manganite films: relevance of correlated polarons”. Moshnyaga V, Gehrke K, Sudheendra L, Belenchuk A, Raabe S, Shapoval O, Verbeeck J, Van Tendeloo G, Samwer K, Physical review : B : solid state 79, 134413 (2009). http://doi.org/10.1103/PhysRevB.79.134413
Abstract: The metal-insulator (MI) transition in epitaxial thin films of La0.75Ca0.25MnO3 (LCMO) is accompanied by the appearance of an intrinsic electrical nonlinearity. The latter, probed by electrical third harmonic voltage, U3, or resistance, R3=dU3/dJ, is drastically enhanced in the vicinity of the MI transition, TMI=267 K. Applied magnetic field, B=5 T, suppresses the nonlinearity, resulting in a huge nonlinear CMR3(TMI)~105%. R3 shows a peculiar low-frequency (1 kHz) dependence, R3~(-0)n, with exponent, n, changing across the MI transition from n~1,52 for TTMI to n=1 (T<TMI). The observed electrical nonlinearity in LCMO reflects the behavior of correlated polarons, the number of which dramatically enhances in the vicinity of TMI. We argued that correlated polarons, considered as electric-elastic quadrupoles, provide a nonlinear (quadratic) coupling to the electric field, yielding a third harmonic electric nonlinearity in LCMO. The reference film of La0.7Sr0.3MnO3 (LSMO), a prototypic double exchange system with second-order phase transition, is characterized as a linear metallic material in the whole range of temperatures (T=10400 K), magnetic fields (B=05 T), and frequencies (=11000 Hz).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.79.134413
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“Electronic reconstruction at n-type SrTiO3/LaAlO3 interfaces”. Verbeeck J, Bals S, Lamoen D, Luysberg M, Huijben M, Rijnders G, Brinkman A, Hilgenkamp H, Blank DHA, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 085113 (2010). http://doi.org/10.1103/PhysRevB.81.085113
Abstract: Electron-energy-loss spectroscopy (EELS) is used to investigate single layers of LaAlO3 grown on SrTiO3 having an n-type interface as well as multilayers of LaAlO3 and SrTiO3 in which both n- and p-type interfaces occur. Only minor changes in Ti valence at the n-type interface are observed. This finding seems to contradict earlier experiments for other SrTiO3/LaAlO3 systems where large deviations in Ti valency were assumed to be responsible for the conductivity of these interfaces. Ab initio calculations have been carried out in order to interpret our EELS results. Using the concept of Bader charges, it is demonstrated that the so-called polar discontinuity is mainly resolved by lattice distortions and to a far lesser extent by changes in valency for both single layer and multilayer geometries.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.81.085113
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“Transport, magnetic, and structural properties of La0.7Ce0.3MnO3 thin films: evidence for hole-doping”. Werner R, Raisch C, Leca V, Ion V, Bals S, Van Tendeloo G, Chasse T, Kleiner R, Koelle D, Physical review : B : solid state 79, 054416 (2009). http://doi.org/10.1103/PhysRevB.79.054416
Abstract: Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at 720 °C and oxygen pressure pO2=125 Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO2 as a secondary phase could be avoided for pO28 Pa. However, transmission electron microscopy shows the presence of CeO2 nanoclusters even in those films which appear to be single phase in XRD. With O2 annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La0.7Ce0.3MnO3 with mixed Mn3+/Mn2+ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn3+ and Mn4+, and only a small amount of Mn2+ ions can be observed by XAS. Mn2+ and Ce4+ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.79.054416
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“Crosshatching on La0.5Ca0.5MnO3 ultrathin films epitaxially grown on SrTiO3(100)”. Wang Z-H, Lebedev OI, Van Tendeloo G, Cristiani G, Habermeier H-U, Physical review : B : condensed matter and materials physics 77, 1 (2008). http://doi.org/10.1103/PhysRevB.77.115330
Abstract: The morphological evolution in La(0.5)Ca(0.5)MnO(3)/SrTiO(3)(100) ultrathin films has been revealed by atomic force microscopy. It was found that ordered linear defects, which are in 1-2 unit cells high and oriented along the cubic [110] and [100] directions, first appear on the smooth surface of films with a thickness of 10 nm. As the epitaxial growth proceeds, these lines on surface develop into a crosshatch pattern for films with a thickness of 25 nm. Using the results of transmission electron microscopy and electrical measurements, we discuss the interplay between the surface pattern formation, the internal dislocation structure, and the variations in the electrical properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.77.115330
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“Application of the weighted-density approximation to the accurate description of electron-positron correlation effects in materials”. Callewaert V, Saniz R, Barbiellini B, Bansil A, Partoens B, Physical review B 96, 085135 (2017). http://doi.org/10.1103/PhysRevB.96.085135
Abstract: We discuss positron-annihilation lifetimes for a set of illustrative bulk materials within the framework of the weighted-density approximation (WDA). The WDA can correctly describe electron-positron correlations in strongly inhomogeneous systems, such as surfaces, where the applicability of (semi-)local approximations is limited. We analyze the WDA in detail and show that the electrons which cannot screen external charges efficiently, such as the core electrons, cannot be treated accurately via the pair correlation of the homogeneous electron gas. We discuss how this problem can be addressed by reducing the screening in the homogeneous electron gas by adding terms depending on the gradient of the electron density. Further improvements are obtained when core electrons are treated within the LDA and the valence electron using the WDA. Finally, we discuss a semiempirical WDA-based approach in which a sum rule is imposed to reproduce the experimental lifetimes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PhysRevB.96.085135
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“Effects of spatially engineered Dzyaloshinskii-Moriya interaction in ferromagnetic films”. Mulkers J, Van Waeyenberge B, Milošević, MV, Physical review B 95, 144401 (2017). http://doi.org/10.1103/PhysRevB.95.144401
Abstract: The Dzyaloshinskii-Moriya interaction (DMI) is a chiral interaction that favors formation of domain walls. Recent experiments and ab initio calculations show that there are multiple ways to modify the strength of the interfacially induced DMI in thin ferromagnetic films with perpendicular magnetic anisotropy. In this paper we reveal theoretically the effects of spatially varied DMI on the magnetic state in thin films. In such heterochiral 2D structures we report several emergent phenomena, ranging from the equilibrium spin canting at the interface between regions with different DMI, over particularly strong confinement of domain walls and skyrmions within high-DMI tracks, to advanced applications such as domain tailoring nearly at will, design of magnonic waveguides, and much improved skyrmion racetrack memory.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 60
DOI: 10.1103/PhysRevB.95.144401
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“Anisotropic type-I superconductivity and anomalous superfluid density in OsB2”. Bekaert J, Vercauteren S, Aperis A, Komendová, L, Prozorov R, Partoens B, Milošević, MV, Physical review B 94, 144506 (2016). http://doi.org/10.1103/PhysRevB.94.144506
Abstract: We present a microscopic study of superconductivity in OsB2 , and discuss the origin and characteristic length
scales of the superconducting state. From first-principles we show that OsB2 is characterized by three different
Fermi sheets, and we prove that this fermiology complies with recent quantum-oscillation experiments. Using the
found microscopic properties, and experimental data from the literature, we employ Ginzburg-Landau relations
to reveal that OsB2 is a distinctly type-I superconductor with a very low Ginzburg-Landau parameter κ—a rare
property among compound materials. We show that the found coherence length and penetration depth corroborate
the measured thermodynamic critical field. Moreover, our calculation of the superconducting gap structure using
anisotropic Eliashberg theory and ab initio calculated electron-phonon interaction as input reveals a single but
anisotropic gap. The calculated gap spectrum is shown to give an excellent account for the unconventional
behavior of the superfluid density of OsB2 measured in experiments as a function of temperature. This reveals
that gap anisotropy can explain such behavior, observed in several compounds, which was previously attributed
solely to a two-gap nature of superconductivity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 19
DOI: 10.1103/PhysRevB.94.144506
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“Distinctive magnetic properties of CrI3 and CrBr3 monolayers caused by spin-orbit coupling”. Bacaksiz C, Šabani D, Menezes RM, Milošević, MV, Physical Review B 103, 125418 (2021). http://doi.org/10.1103/PhysRevB.103.125418
Abstract: After the discovery of magnetism in monolayer CrI3, the magnetic properties of different 2D materials from the chromium-trihalide family are intuitively assumed to be similar, yielding magnetic anisotropy from the spin-orbit coupling on halide ligands. Here we reveal significant differences between the CrI3 and CrBr3 magnetic monolayers in their magnetic anisotropy, resulting Curie temperature, hysteresis in external magnetic field, and evolution of magnetism with strain, all predominantly attributed to distinctly different interplay of atomic contributions to spin-orbit coupling in two materials.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.103.125418
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“Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots”. Nistor SV, Stefan M, Nistor LC, Goovaerts E, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 035336 (2010). http://doi.org/10.1103/PhysRevB.81.035336
Abstract: Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dotsQDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed zero-field-splitting parameter |D|=41×10−4 cm−1. The local distortion is attributed to the presence in the second shell of ligands of a stacking fault or twin, which alters the normal stacking sequence of the cubic structure. The HRTEM results confirm the presence of such extended planar defects in a large percentage of the investigated QDs, which makes possible the proposed substitutional Mn2+ impurity ions localization model. Based on these results it is suggested that the high doping levels of Mn2+ ions observed in cubic ZnS and possible in other II-VI semiconductor QDs prepared at low temperatures can be explained by the assistance of the extended lattice defects in the impurities incorporation.
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 55
DOI: 10.1103/PhysRevB.81.035336
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“Ultralow blocking temperature and breakdown of the giant spin model in Er3+-doped nanoparticles”. van den Heuvel W, Tikhomirov VK, Kirilenko D, Schildermans N, Chibotaru LF, Vanacken J, Gredin P, Mortier M, Van Tendeloo G, Moshchalkov VV, Physical review : B : condensed matter and materials physics 82, 094421 (2010). http://doi.org/10.1103/PhysRevB.82.094421
Abstract: The magnetization of luminescent Er3+-doped PbF2 nanoparticles (formula Er0.3Pb0.7F2.3) has been studied. Despite the high concentration of the doping Er3+ ions and relatively large size (8 nm) of these nanoparticles we have found no deviation between field-cooled and zero-field-cooled magnetization curves down to T=0.35 K, which points out an ultralow blocking temperature for the reversal of magnetization. We also have found strongly deviating magnetization curves M(H/T) for different temperatures T. These results altogether show that the investigated nanoparticles are not superparamagnetic, but rather each Er3+ ion in these nanoparticles is found in a paramagnetic state down to very low temperatures, which implies the breakdown of the Néel-Brown giant spin model in the case of these nanoparticles. Calculations of magnetization within a paramagnetic model of noninteracting Er3+ ions completely support this conclusion. Due to the ultralow blocking temperature, these nanoparticles have a potential for magnetic field-induced nanoscale refrigeration with an option of their optical localization and temperature control.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PhysRevB.82.094421
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“Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots”. Janssen G, Goovaerts E, Bouwen A, Partoens B, van Daele B, Zurauskiene N, Koenraad PM, Wolter JH, Physical review : B : condensed matter and materials physics 68, 045329 (2003). http://doi.org/10.1103/PhysRevB.68.045329
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.68.045329
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“Oscillations of the superconducting temperature induced by quantum well states in thin metallic films: numerical solution of the Bogoliubov-de Gennes equations”. Shanenko AA, Croitoru MD, Peeters FM, Physical review : B : condensed matter and materials physics 75, 014519 (2007). http://doi.org/10.1103/PhysRevB.75.014519
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 85
DOI: 10.1103/PhysRevB.75.014519
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“Dependence of superconducting properties on the size and shape of a nanoscale superconductor: from nanowire to film”. Croitoru MD, Shanenko AA, Peeters FM, Physical review : B : condensed matter and materials physics 76, 024511 (2007). http://doi.org/10.1103/PhysRevB.76.024511
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 54
DOI: 10.1103/PhysRevB.76.024511
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“Procedure to count atoms with trustworthy single-atom sensitivity”. Van Aert S, de Backer A, Martinez GT, Goris B, Bals S, Van Tendeloo G, Rosenauer A, Physical review : B : condensed matter and materials physics 87, 064107 (2013). http://doi.org/10.1103/PhysRevB.87.064107
Abstract: We report a method to reliably count the number of atoms from high-angle annular dark field scanning transmission electron microscopy images. A model-based analysis of the experimental images is used to measure scattering cross sections at the atomic level. The high sensitivity of these measurements in combination with a thorough statistical analysis enables us to count atoms with single-atom sensitivity. The validity of the results is confirmed by means of detailed image simulations. We will show that the method can be applied to nanocrystals of arbitrary shape, size, and atom type without the need for a priori knowledge about the atomic structure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.87.064107
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“Using electron vortex beams to determine chirality of crystals in transmission electron microscopy”. Juchtmans R, Béché, A, Abakumov A, Batuk M, Verbeeck J, Physical review : B : condensed matter and materials physics 91, 094112 (2015). http://doi.org/10.1103/PhysRevB.91.094112
Abstract: We investigate electron vortex beams elastically scattered on chiral crystals. After deriving a general expression for the scattering amplitude of a vortex electron, we study its diffraction on point scatterers arranged on a helix. We derive a relation between the handedness of the helix and the topological charge of the electron vortex on one hand and the symmetry of the higher-order Laue zones in the diffraction pattern on the other for kinematically and dynamically scattered electrons. We then extend this to atoms arranged on a helix as found in crystals which belong to chiral space groups and propose a method to determine the handedness of such crystals by looking at the symmetry of the diffraction pattern. In contrast to alternative methods, our technique does not require multiple scattering, which makes it possible to also investigate extremely thin samples in which multiple scattering is suppressed. In order to verify the model, elastic scattering simulations are performed, and an experimental demonstration on Mn2Sb2O7 is given in which we find the sample to belong to the right-handed variant of its enantiomorphic pair. This demonstrates the usefulness of electron vortex beams to reveal the chirality of crystals in a transmission electron microscope and provides the required theoretical basis for further developments in this field.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 54
DOI: 10.1103/PhysRevB.91.094112
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“Interfacial spin glass state and exchange bias in manganite bilayers with competing magnetic orders”. Ding JF, Lebedev OI, Turner S, Tian YF, Hu WJ, Seo JW, Panagopoulos C, Prellier W, Van Tendeloo G, Wu T, Physical review : B : condensed matter and materials physics 87, 054428 (2013). http://doi.org/10.1103/PhysRevB.87.054428
Abstract: The magnetic properties of manganite bilayers composed of G-type antiferromagnetic (AFM) SrMnO3 and double-exchange ferromagnetic (FM) La0.7Sr0.3MnO3 are studied. A spin-glass state is observed as a result of competing magnetic orders and spin frustration at the La0.7Sr0.3MnO3/SrMnO3 interface. The dependence of the irreversible temperature on the cooling magnetic field follows the Almeida-Thouless line. Although an ideal G-type AFM SrMnO3 is featured with a compensated spin configuration, the bilayers exhibit exchange bias below the spin glass freezing temperature, which is much lower than the Néel temperature of SMO, indicating that the exchange bias is strongly correlated with the spin glass state. The results indicate that the spin frustration that originates from the competition between the AFM super-exchange and the FM double-exchange interactions can induce a strong magnetic anisotropy at the La0.7Sr0.3MnO3/SrMnO3 interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 98
DOI: 10.1103/PhysRevB.87.054428
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“Microstructure and interface studies of LaVO3/SrVO3 superlattices”. Boullay P, David A, Sheets WC, Lüders U, Prellier W, Tan H, Verbeeck J, Van Tendeloo G, Gatel C, Vincze G, Radi Z, Physical review : B : condensed matter and materials physics 83, 125403 (2011). http://doi.org/10.1103/PhysRevB.83.125403
Abstract: The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on a (100)-SrTiO3 substrate were studied using transmission electron microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single-crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3, while SVO layers suffers from a tetragonal distortion due to the substrate-induced stain. Electron energy loss spectroscopy investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and the SrVO3 layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 26
DOI: 10.1103/PhysRevB.83.125403
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