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“In Situ Quantitative Tensile Testing of Antigorite in a Transmission Electron Microscope”. Idrissi H, Samaee V, Lumbeeck G, Werf T, Pardoen T, Schryvers D, Cordier P, Journal Of Geophysical Research-Solid Earth 125 (2020). http://doi.org/10.1029/2019JB018383
Abstract: The determination of the mechanical properties of serpentinites is essential toward the understanding of the mechanics of faulting and subduction. Here we present the first in situ tensile tests on antigorite in a transmission electron microscope. A push‐to‐pull deformation device is used to perform quantitative tensile tests, during which force and displacement are measured, while the evolving microstructure is imaged with the microscope. The experiments have been performed at room temperature on 2 × 1 × 0.2 μm3 beams prepared by focused ion beam. The specimens are not single crystals despite their small sizes. Orientation mapping indicated that several grains were well oriented for plastic slip. However, no dislocation activity has been observed even though the engineering tensile stress went up to 700 MPa. We show also that antigorite does not exhibit a purely elastic‐brittle behavior since, despite the presence of defects, the specimens accumulate permanent deformation and did not fail within the elastic regime. Instead, we observe that strain localizes at grain boundaries. All observations concur to show that under these experimental conditions, grain boundary sliding is the dominant deformation mechanism. This study sheds a new light on the mechanical properties of antigorite and calls for further studies on the structure and properties of grain boundaries in antigorite and more generally in phyllosilicates.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.9
DOI: 10.1029/2019JB018383
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“Evaluation of different rectangular scan strategies for STEM imaging”. Velazco A, Nord M, Béché, A, Verbeeck J, Ultramicroscopy , 113021 (2020). http://doi.org/10.1016/j.ultramic.2020.113021
Abstract: STEM imaging is typically performed by raster scanning a focused electron probe over a sample. Here we investigate and compare three different scan patterns, making use of a programmable scan engine that allows to arbitrarily set the sequence of probe positions that are consecutively visited on the sample. We compare the typical raster scan with a so-called ‘snake’ pattern where the scan direction is reversed after each row and a novel Hilbert scan pattern that changes scan direction rapidly and provides an homogeneous treatment of both scan directions. We experimentally evaluate the imaging performance on a single crystal test sample by varying dwell time and evaluating behaviour with respect to sample drift. We demonstrate the ability of the Hilbert scan pattern to more faithfully represent the high frequency content of the image in the presence of sample drift. It is also shown that Hilbert scanning provides reduced bias when measuring lattice parameters from the obtained scanned images while maintaining similar precision in both scan directions which is especially important when e.g. performing strain analysis. Compared to raster scanning with flyback correction, both snake and Hilbert scanning benefit from dose reduction as only small probe movement steps occur.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.2
Times cited: 13
DOI: 10.1016/j.ultramic.2020.113021
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“Analysis of internal stress build-up during deposition of nanocrystalline Ni thin films using transmission electron microscopy”. Lumbeeck G, Delvaux A, Idrissi H, Proost J, Schryvers D, Thin solid films : an international journal on the science and technology of thin and thick films 707, 138076 (2020). http://doi.org/10.1016/j.tsf.2020.138076
Abstract: Ni thin films sputter-deposited at room temperature with varying Ar pressures were investigated with automated crystal orientation mapping in a transmission electron microscope to uncover the mechanisms controlling the internal stress build-up recorded in-situ during deposition. Large grains were found to induce behaviour similar to a stress-free nucleation layer. The measurements of grain size in most of the Ni thin films are in agreement with the island coalescence model. Low internal stress was observed at low Ar pressure and was explained by the presence of large grains. Relaxation of high internal stress was also noticed at the highest Ar pressure, which was attributed to a decrease of Σ3 twin boundary density due to a low deposition rate. The results provide insightful information to better understand the relationship between structural boundaries and the evolution of internal stress upon deposition of thin films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1016/j.tsf.2020.138076
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“Thermal-strain-engineered ferromagnetism of LaMnO3/SrTiO3 heterostructures grown on silicon”. Chen B, Gauquelin N, Reith P, Halisdemir U, Jannis D, Spreitzer M, Huijben M, Abel S, Fompeyrine J, Verbeeck J, Hilgenkamp H, Rijnders G, Koster G, Physical review materials 4, 024406 (2020). http://doi.org/10.1103/PhysRevMaterials.4.024406
Abstract: The integration of oxides on Si remains challenging, which largely hampers the practical applications of oxide-based electronic devices with superior performance. Recently, LaMnO3/SrTiO3 (LMO/STO) heterostructures have gained renewed interest for the debating origin of the ferromagnetic-insulating ground state as well as for their spin-filter applications. Here we report on the structural and magnetic properties of high-quality LMO/STO heterostructures grown on silicon. The chemical abruptness across the interface was investigated by atomic-resolution scanning transmission electron microscopy. The difference in the thermal expansion coefficients between LMO and Si imposed a large biaxial tensile strain to the LMO film, resulting in a tetragonal structure with c/a∼ 0.983. Consequently, we observed a significantly suppressed ferromagnetism along with an enhanced coercive field, as compared to the less distorted LMO film (c/a∼1.004) grown on STO single crystal. The results are discussed in terms of tensile-strain enhanced antiferromagnetic instabilities. Moreover, the ferromagnetism of LMO on Si sharply disappeared below a thickness of 5 unit cells, in agreement with the LMO/STO case, pointing to a robust critical behavior irrespective of the strain state. Our results demonstrate that the growth of oxide films on Si can be a promising way to study the tensile-strain effects in correlated oxides, and also pave the way towards the integration of multifunctional oxides on Si with atomic-layer control.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
Times cited: 6
DOI: 10.1103/PhysRevMaterials.4.024406
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“Co valence transformation in isopolar LaCoO3/LaTiO3 perovskite heterostructures via interfacial engineering”. Araizi-Kanoutas G, Geessinck J, Gauquelin N, Smit S, Verbeek XH, Mishra SK, Bencok P, Schlueter C, Lee T-L, Krishnan D, Fatermans J, Verbeeck J, Rijnders G, Koster G, Golden MS, Physical review materials 4, 026001 (2020). http://doi.org/10.1103/PhysRevMaterials.4.026001
Abstract: We report charge transfer up to a single electron per interfacial unit cell across nonpolar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and trilayer systems grown using pulsed laser deposition, soft x-ray absorption, dichroism, and scanning transmission electron microscopy-electron energy loss spectroscopy are used to probe the cobalt-3d electron count and provide an element-specific investigation of the magnetic properties. The experiments show the cobalt valence conversion is active within 3 unit cells of the heterointerface, and able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3/LaCoO3 interfaces, the thickness of an additional, electronically insulating “break” layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in trilayers provide a trio of control knobs for average charge of the cobalt ions in LaCoO3, illustrating the efficacy of O−2p band alignment as a guiding principle for property design in complex oxide heterointerfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
Times cited: 13
DOI: 10.1103/PhysRevMaterials.4.026001
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“Overcoming Crystallinity Limitations of Aluminium Metal-Organic Frameworks by Oxalic Acid Modulated Synthesis”. Canossa S, Gonzalez-Nelson A, Shupletsov L, Carmen Martin M, Van der Veen MA, Chemistry-A European Journal 26, 3564 (2020). http://doi.org/10.1002/chem.201904798
Abstract: A modulated synthesis approach based on the chelating properties of oxalic acid (H2C2O4) is presented as a robust and versatile method to achieve highly crystalline Al‐based metal‐organic frameworks. A comparative study on this method and the already established modulation by hydrofluoric acid was conducted using MIL‐53 as test system. The superior performance of oxalic acid modulation in terms of crystallinity and absence of undesired impurities is explained by assessing the coordination modes of the two modulators and the structural features of the product. The validity of our approach was confirmed for a diverse set of Al‐MOFs, namely X‐MIL‐53 (X=OH, CH3O, Br, NO2), CAU‐10, MIL‐69, and Al(OH)ndc (ndc=1,4‐naphtalenedicarboxylate), highlighting the potential benefits of extending the use of this modulator to other coordination materials.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.3
DOI: 10.1002/chem.201904798
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“Secondary-Phase-Assisted Grain Boundary Migration in CuInSe2”. Li C, Sanli ES, Barragan-Yani D, Stange H, Heinemann M-D, Greiner D, Sigle W, Mainz R, Albe K, Abou-Ras D, van Aken P A, Physical Review Letters 124, 095702 (2020). http://doi.org/10.1103/PhysRevLett.124.095702
Abstract: Significant structural evolution occurs during the deposition of CuInSe2 solar materials when the Cu content increases. We use in situ heating in a scanning transmission electron microscope to directly observe how grain boundaries migrate during heating, causing nondefected grains to consume highly defected grains. Cu substitutes for In in the near grain boundary regions, turning them into a Cu-Se phase topotactic with the CuInSe2 grain interiors. Together with density functional theory and molecular dynamics calculations, we reveal how this Cu-Se phase makes the grain boundaries highly mobile.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.6
DOI: 10.1103/PhysRevLett.124.095702
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“YBa2Cu3O7−xfilms with Ba2Y(Nb,Ta)O6nanoinclusions for high-field applications”. Celentano G, Rizzo F, Augieri A, Mancini A, Pinto V, Rufoloni A, Vannozzi A, MacManus-Driscoll JL, Feighan J, Kursumovic A, Meledin A, Mayer J, Van Tendeloo G, Superconductor Science &, Technology 33, 044010 (2020). http://doi.org/10.1088/1361-6668/ab6ee5
Abstract: The structural and transport properties of YBa2Cu3O7−x films grown by pulsed laser deposition with mixed 2.5 mol% Ba2YTaO6 (BYTO) and 2.5 mol% Ba2YNbO6 (BYNO) double-perovskite secondary phases are investigated in an extended film growth rate, R = 0.02–1.8 nm s−1. The effect of R on the film microstructure analyzed by TEM techniques shows an evolution from sparse and straight to denser, thinner and splayed continuous columns, with mixed BYNO + BYTO (BYNTO) composition, as R increases from 0.02 nm s−1 to 1.2 nm s−1. This microstructure results in very efficient flux pinning at 77 K, leading to a remarkable improvement in the critical current density (J c) behaviour, with the maximum pinning force density F p(Max) = 13.5 GN m−3 and the irreversibility field in excess of 11 T. In this range, the magnetic field values at which the F p is maximized varies from 1 T to 5 T, being related to the BYNTO columnar density. The film deposited when R = 0.3 nm s−1 exhibits the best performances over the whole temperature and magnetic field ranges, achieving F p(Max) = 900 GN m−3 at 10 K and 12 T. At higher rates, R > 1.2 nm s−1, BYNTO columns show a meandering nature and are prone to form short nanorods. In addition, in the YBCO film matrix a more disordered structure with a high density of short stacking faults is observed. From the analysis of the F p(H, T) curves it emerges that in films deposited at the high R limit, the vortex pinning is no longer dominated by BYNTO columnar defects, but by a new mechanism showing the typical temperature scaling law. Even though this microstructure produces a limited improvement at 77 K, it exhibits a strong J c improvement at lower temperature with F p = 700 GN m−3 at 10 K, 12 T and 900 GN m−3 at 4.2 K, 18 T.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.6
DOI: 10.1088/1361-6668/ab6ee5
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“Manganese‐Doping‐Induced Quantum Confinement within Host Perovskite Nanocrystals through Ruddlesden–Popper Defects”. Paul S, Bladt E, Richter AF, Döblinger M, Tong Y, Huang H, Dey A, Bals S, Debnath T, Polavarapu L, Feldmann J, Angewandte Chemie-International Edition 59, 6794 (2020). http://doi.org/10.1002/anie.201914473
Abstract: The concept of doping Mn2+ ions into II–VI semiconductor nanocrystals (NCs) was recently extended to perovskite NCs. To date, most studies on Mn2+ doped NCs focus on enhancing the emission related to the Mn2+ dopant via an energy transfer mechanism. Herein, we found that the doping of Mn2+ ions into CsPbCl3 NCs not only results in a Mn2+‐related orange emission, but also strongly influences the excitonic properties of the host NCs. We observe for the first time that Mn2+ doping leads to the formation of Ruddlesden–Popper (R.P.) defects and thus induces quantum confinement within the host NCs. We find that a slight doping with Mn2+ ions improves the size distribution of the NCs, which results in a prominent excitonic peak. However, with increasing the Mn2+ concentration, the number of R.P. planes increases leading to smaller single‐crystal domains. The thus enhanced confinement and crystal inhomogeneity cause a gradual blue shift and broadening of the excitonic transition, respectively.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 16.6
Times cited: 64
DOI: 10.1002/anie.201914473
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“Reliable Characterization of Organic &, Pharmaceutical Compounds with High Resolution Monochromated EEL Spectroscopy”. Das PP, Guzzinati G, Coll C, Gomez Perez A, Nicolopoulos S, Estrade S, Peiro F, Verbeeck J, Zompra AA, Galanis AS, Polymers 12, 1434 (2020). http://doi.org/10.3390/polym12071434
Abstract: Organic and biological compounds (especially those related to the pharmaceutical industry) have always been of great interest for researchers due to their importance for the development of new drugs to diagnose, cure, treat or prevent disease. As many new API (active pharmaceutical ingredients) and their polymorphs are in nanocrystalline or in amorphous form blended with amorphous polymeric matrix (known as amorphous solid dispersion—ASD), their structural identification and characterization at nm scale with conventional X-Ray/Raman/IR techniques becomes difficult. During any API synthesis/production or in the formulated drug product, impurities must be identified and characterized. Electron energy loss spectroscopy (EELS) at high energy resolution by transmission electron microscope (TEM) is expected to be a promising technique to screen and identify the different (organic) compounds used in a typical pharmaceutical or biological system and to detect any impurities present, if any, during the synthesis or formulation process. In this work, we propose the use of monochromated TEM-EELS, to analyze selected peptides and organic compounds and their polymorphs. In order to validate EELS for fingerprinting (in low loss/optical region) and by further correlation with advanced DFT, simulations were utilized.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.364
Times cited: 6
DOI: 10.3390/polym12071434
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“Berry phase engineering at oxide interfaces”. Groenendijk DJ, Autieri C, van Thiel TC, Brzezicki W, Hortensius JR, Afanasiev D, Gauquelin N, Barone P, van den Bos KHW, van Aert S, Verbeeck J, Filippetti A, Picozzi S, Cuoco M, Caviglia AD, 2, 023404 (2020). http://doi.org/10.1103/PhysRevResearch.2.023404
Abstract: Three-dimensional strontium ruthenate (SrRuO3) is an itinerant ferromagnet that features Weyl points acting as sources of emergent magnetic fields, anomalous Hall conductivity, and unconventional spin dynamics. Integrating SrRuO3 in oxide heterostructures is potentially a novel route to engineer emergent electrodynamics, but its electronic band topology in the two-dimensional limit remains unknown. Here we show that ultrathin SrRuO3 exhibits spin-polarized topologically nontrivial bands at the Fermi energy. Their band anticrossings show an enhanced Berry curvature and act as competing sources of emergent magnetic fields. We control their balance by designing heterostructures with symmetric (SrTiO3/SrRuO3/SrTiO3 and SrIrO3/SrRuO3/SrIrO3) and asymmetric interfaces (SrTiO3/SrRuO3/SrIrO3). Symmetric structures exhibit an interface-tunable single-channel anomalous Hall effect, while ultrathin SrRuO3 embedded in asymmetric structures shows humplike features consistent with multiple Hall contributions. The band topology of two-dimensional SrRuO3 proposed here naturally accounts for these observations and harmonizes a large body of experimental results.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 58
DOI: 10.1103/PhysRevResearch.2.023404
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“HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale”. Prabhakara V, Jannis D, Guzzinati G, Béché, A, Bender H, Verbeeck J, Ultramicroscopy 219, 113099 (2020). http://doi.org/10.1016/j.ultramic.2020.113099
Abstract: Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by applying Geometric Phase Analysis or image fitting procedures. However, HR-STEM images regularly suffer from scanning distortions and sample drift during image acquisition. In this paper, we propose a new scanning strategy that drastically reduces artefacts due to drift and scanning distortion, along with extending the field of view. It consists of the acquisition of a series of independent small subimages containing an atomic resolution image of the local lattice. All subimages are then analysed individually for strain by fitting a nonlinear model to the lattice images. The method allows flexible tuning of spatial resolution and the field of view within the limits of the dynamic range of the scan engine while maintaining atomic resolution sampling within the subimages. The obtained experimental strain maps are quantitatively benchmarked against the Bessel diffraction technique. We demonstrate that the proposed scanning strategy approaches the performance of the diffraction technique while having the advantage that it does not require specialized diffraction cameras.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.2
Times cited: 4
DOI: 10.1016/j.ultramic.2020.113099
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“Fast versus conventional HAADF-STEM tomography of nanoparticles: advantages and challenges”. Vanrompay H, Skorikov A, Bladt E, Béché, A, Freitag B, Verbeeck J, Bals S, Ultramicroscopy 221, 113191 (2021). http://doi.org/10.1016/j.ultramic.2020.113191
Abstract: HAADF-STEM tomography is a widely used experimental technique for analyzing nanometer-scale crystalline structures of a large variety of materials in three dimensions. Unfortunately, the acquisition of conventional HAADF-STEM tilt series can easily take up one hour or more, depending on the complexity of the experiment. It is therefore far from straightforward to investigate samples that do not withstand long acquisition or to acquire large amounts of tilt series during a single TEM experiment. The latter would lead to the ability to obtain statistically meaningful 3D data, or to perform in situ 3D characterizations with a much shorter time resolution. Various HAADF-STEM acquisition strategies have been proposed to accelerate the tomographic acquisition and reduce the required electron dose. These methods include tilting the holder continuously while acquiring a projection “movie” and a hybrid, incremental, methodology which combines the benefits of the conventional and continuous technique. However, until now an experimental evaluation has been lacking. In this paper, the different acquisition strategies will be experimentally compared in terms of speed, resolution and electron dose. This evaluation will be performed based on experimental tilt series acquired for various metallic nanoparticles with different shapes and sizes. We discuss the data processing involved with the fast HAADF-STEM tilt series and provide a general guideline when which acquisition strategy should be preferentially used.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 15
DOI: 10.1016/j.ultramic.2020.113191
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“Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices”. Wang J, Gauquelin N, Huijben M, Verbeeck J, Rijnders G, Koster G, Applied Physics Letters 117, 133105 (2020). http://doi.org/10.1063/5.0020615
Abstract: The metal-insulator transition (MIT) in strongly correlated oxides is a topic of great interest for its potential applications, such as Mott field effect transistors and sensors. We report that the MIT in high quality epitaxial SrVO3 (SVO) thin films is present as the film thickness is reduced, lowering the dimensionality of the system, and electron-electron correlations start to become the dominant interactions. The critical thickness of 3 u.c is achieved by avoiding effects due to off-stoichiometry using optimal growth conditions and excluding any surface effects by a STO capping layer. Compared to the single SVO thin films, conductivity enhancement in SVO/STO superlattices is observed. This can be explained by the interlayer coupling effect between SVO sublayers in the superlattices. Magnetoresistance and Hall measurements indicate that the dominant driving force of MIT is the electron–electron interaction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4
Times cited: 8
DOI: 10.1063/5.0020615
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“Simultaneous heteroepitaxial growth of SrO (001) and SrO (111) during strontium-assisted deoxidation of the Si (001) surface”. Jovanović, Z, Gauquelin N, Koster G, Rubio-Zuazo J, Ghosez P, Verbeeck J, Suvorov D, Spreitzer M, Rsc Advances 10, 31261 (2020). http://doi.org/10.1039/D0RA06548J
Abstract: Epitaxial integration of transition-metal oxides with silicon brings a variety of functional properties to the well-established platform of electronic components. In this process, deoxidation and passivation of the silicon surface are one of the most important steps, which in our study were controlled by an ultra-thin layer of SrO and monitored by using transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), synchrotron X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) methods. Results revealed that an insufficient amount of SrO leads to uneven deoxidation of the silicon surface<italic>i.e.</italic>formation of pits and islands, whereas the composition of the as-formed heterostructure gradually changes from strontium silicide at the interface with silicon, to strontium silicate and SrO in the topmost layer. Epitaxial ordering of SrO, occurring simultaneously with silicon deoxidation, was observed. RHEED analysis has identified that SrO is epitaxially aligned with the (001) Si substrate both with SrO (001) and SrO (111) out-of-plane directions. This observation was discussed from the point of view of SrO desorption, SrO-induced deoxidation of the Si (001) surface and other interfacial reactions as well as structural ordering of deposited SrO. Results of the study present an important milestone in understanding subsequent epitaxial integration of functional oxides with silicon using SrO.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.9
Times cited: 1
DOI: 10.1039/D0RA06548J
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“Hidden Markov model for atom-counting from sequential ADF STEM images: Methodology, possibilities and limitations”. De wael A, De Backer A, Van Aert S, Ultramicroscopy 219, 113131 (2020). http://doi.org/10.1016/j.ultramic.2020.113131
Abstract: We present a quantitative method which allows us to reliably measure dynamic changes in the atomic structure of monatomic crystalline nanomaterials from a time series of atomic resolution annular dark field scanning transmission electron microscopy images. The approach is based on the so-called hidden Markov model and estimates the number of atoms in each atomic column of the nanomaterial in each frame of the time series. We discuss the origin of the improved performance for time series atom-counting as compared to the current state-of-the-art atom-counting procedures, and show that the so-called transition probabilities that describe the probability for an atomic column to lose or gain one or more atoms from frame to frame are particularly important. Using these transition probabilities, we show that the method can also be used to estimate the probability and cross section related to structural changes. Furthermore, we explore the possibilities for applying the method to time series recorded under variable environmental conditions. The method is shown to be promising for a reliable quantitative analysis of dynamic processes such as surface diffusion, adatom dynamics, beam effects, or in situ experiments.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.2
DOI: 10.1016/j.ultramic.2020.113131
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“Standard Practices of Reticular Chemistry”. Gropp C, Canossa S, Wuttke S, Gándara F, Li Q, Gagliardi L, Yaghi OM, Acs Central Science 6, 1255 (2020). http://doi.org/10.1021/acscentsci.0c00592
Abstract: Since 1995 when the first of metal−organic frameworks was crystallized with the strong bond approach, where metal ions are joined by charged organic linkers exemplified by carboxylates, followed by proof of their porosity in 1998 and ultrahigh porosity in 1999, a revolution in the development of their chemistry has ensued. This is being reinforced by the discovery of two- and three-dimensional covalent organic frameworks in 2005 and 2007. Currently, the chemistry of such porous, crystalline frameworks is collectively referred to as reticular chemistry, which is being practiced in over 100 countries. The involvement of researchers from various backgrounds and fields, and the vast scope of this chemistry and its societal applications, necessitate articulating the “Standard Practices of Reticular Chemistry”.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 18.2
DOI: 10.1021/acscentsci.0c00592
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“Efficient Phase Contrast Imaging via Electron Ptychography, a Tutorial”. Pennycook TJ, Martinez GT, O'Leary CM, Yang H, Nellist PD, Microscopy and microanalysis 25, 2684 (2019). http://doi.org/10.1017/S1431927619014156
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1017/S1431927619014156
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“Tuning Size and Seed Position in Small Silver Nanorods”. Sánchez-Iglesias A, Zhuo X, Albrecht W, Bals S, Liz-Marzán LM, ACS materials letters 2, 1246 (2020). http://doi.org/10.1021/acsmaterialslett.0c00388
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1021/acsmaterialslett.0c00388
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“An in-depth study of Sn substitution in Li-rich/Mn-rich NMC as a cathode material for Li-ion batteries”. Paulus A, Hendrickx M, Bercx M, Karakulina OM, Kirsanova MA, Lamoen D, Hadermann J, Abakumov AM, Van Bael MK, Hardy A, Journal of the Chemical Society : Dalton transactions 49, 10486 (2020). http://doi.org/10.1039/D0DT01047B
Abstract: Layered Li-rich/Mn-rich NMC (LMR-NMC) is characterized by high initial specific capacities of more than 250 mA h g(-1), lower cost due to a lower Co content and higher thermal stability than LiCoO2. However, its commercialisation is currently still hampered by significant voltage fade, which is caused by irreversible transition metal ion migration to emptied Li positionsviatetrahedral interstices upon electrochemical cycling. This structural change is strongly correlated with anionic redox chemistry of the oxygen sublattice and has a detrimental effect on electrochemical performance. In a fully charged state, up to 4.8 Vvs.Li/Li+, Mn4+ is prone to migrate to the Li layer. The replacement of Mn4+ for an isovalent cation such as Sn4+ which does not tend to adopt tetrahedral coordination and shows a higher metal-oxygen bond strength is considered to be a viable strategy to stabilize the layered structure upon extended electrochemical cycling, hereby decreasing voltage fade. The influence of Sn4+ on the voltage fade in partially charged LMR-NMC is not yet reported in the literature, and therefore, we have investigated the structure and the corresponding electrochemical properties of LMR-NMC with different Sn concentrations. We determined the substitution limit of Sn4+ in Li1.2Ni0.13Co0.13Mn0.54-xSnxO2 by powder X-ray diffraction and transmission electron microscopy to be x approximate to 0.045. The limited solubility of Sn is subsequently confirmed by density functional theory calculations. Voltage fade for x= 0 andx= 0.027 has been comparatively assessed within the 3.00 V-4.55 V (vs.Li/Li+) potential window, from which it is concluded that replacing Mn4+ by Sn4+ cannot be considered as a viable strategy to inhibit voltage fade within this window, at least with the given restricted doping level.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4
DOI: 10.1039/D0DT01047B
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“Crystal structure, vibrational, electrical, optical and DFT study of C₂H₁0N₂(IO₃)₂.HIO₃”. Ben Abdallah MA, Bacchi A, Parisini A, Canossa S, Bergamonti L, Balestri D, Kamoun S, Journal Of Molecular Structure 1215, 128254 (2020). http://doi.org/10.1016/J.MOLSTRUC.2020.128254
Abstract: The reinvestigation of the EDA-HIO3-H2O system using a different stoichiometric ratio gives rise to a new iodate salt C2H10N2(IO3)(2 center dot)HIO3 denoted as EBIMIA. In this study, we reported the structural properties of ethylenediammonium bis iodate mono iodic acid using X-ray powder and single crystal diffraction at room temperature. The Hirshfeld and the potential energy surface analysis reveal that I center dot center dot center dot O and N-H center dot center dot center dot O are the most noticeable interactions that took place inside the crystal and contribute to the cohesion and stability of the synthesized compound. The DSC measurement shows that this iodate salt undergoes two structural phase transitions, the first occurs at T = 290 K while the second occurs at T = 363 K. However, the dielectric analysis confirms only the second transition because it lies in the studied temperature domain 338-413K. Besides, the impedance data obey a circuit model consisting of a parallel combination of a bulk resistance and CPE. The frequency dispersion of the conductivity follows Jonscher's law and the charge carrier transport may be interpreted using the correlation barrier hopping mechanism (CBH). Finally, the electronic properties and the vibrational analysis of this novel iodate salt are studied using DFT and compared to the experimental data given by the FT-IR, Raman and UV-visible spectroscopies. (C) 2020 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.8
DOI: 10.1016/J.MOLSTRUC.2020.128254
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“Direct visualization of irreducible ferrielectricity in crystals”. Du K, Guo L, Peng J, Chen X, Zhou Z-N, Zhang Y, Zheng T, Liang Y-P, Lu J-P, Ni Z-H, Wang S-S, Van Tendeloo G, Zhang Z, Dong S, Tian H, npj Quantum Materials 5, 49 (2020). http://doi.org/10.1038/S41535-020-00252-Y
Abstract: In solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, e.g., ferroelectricity/ferromagnetism, antiferroelectricity/antiferromagnetism, and even dipole-vortex/magnetic-vortex, but ferrielectricity/ferrimagnetism kept telling a disparate story in microscopic level. Since the definition of a charge dipole involves more than one ion, there may be multiple choices for a dipole unit, which makes most ferrielectric orders equivalent to ferroelectric ones, i.e., this ferrielectricity is not necessary to be a real independent branch of polarity. In this work, by using the spherical aberration-corrected scanning transmission electron microscope, we visualize a nontrivial ferrielectric structural evolution in BaFe2Se3, in which the development of two polar sub-lattices is out-of-sync, for which we term it as irreducible ferrielectricity. Such irreducible ferrielectricity leads to a non-monotonic behavior for the temperature-dependent polarization, and even a compensation point in the ordered state. Our finding unambiguously distinguishes ferrielectrics from ferroelectrics in solids.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1038/S41535-020-00252-Y
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“DSC cycling effects on phase transformation temperatures of micron and submicron grain Ni50.8Ti49.2 microwires”. Pourbabak S, Verlinden B, Van Humbeeck J, Schryvers D, Shape memory and superelasticity , 1 (2020). http://doi.org/10.1007/S40830-020-00278-Y
Abstract: The effect of thermal cycling parameters on the phase transformation temperatures of micron and submicron grain size recrystallized Ni-Ti microwires was investigated. The suppression of martensitic transformation by thermal cycling was found to enhance when combined with room temperature aging between the cycles and enhances even more when aged at elevated temperature of 100 degrees C. While aging at room temperature alone has no clear effect on the martensitic transformation, elevated temperature aging at 100 degrees C alone suppresses the martensitic transformation. All aforementioned effects were found to be stronger in large grain samples than in small grain samples. Martensitic transformation suppression in all cases was in line with the formation of Ni4Ti3 precursors in the form of < 111 & rang;(B2) Ni clusters as concluded from the observed diffuse intensity in the electron diffraction patterns revealing short-range ordering enhancement. Performing thermal cycling in some different temperature ranges to separate the effect of martensitic transformation and high temperature range of DSC cycling revealed that both high temperature- and martensitic transformation-included cycles enhance the short-range ordering.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1007/S40830-020-00278-Y
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“Dual improvement of beta-MnO₂, oxygen evolution electrocatalysts via combined substrate control and surface engineering”. Bigiani L, Gasparotto A, Maccato C, Sada C, Verbeeck J, Andreu T, Morante JR, Barreca D, Chemcatchem , 1 (2020). http://doi.org/10.1002/CCTC.202000999
Abstract: The development of catalysts with high intrinsic activity towards the oxygen evolution reaction (OER) plays a critical role in sustainable energy conversion and storage. Herein, we report on the development of efficient (photo)electrocatalysts based on functionalized MnO(2)systems. Specifically,beta-MnO(2)nanostructures grown by plasma enhanced-chemical vapor deposition on fluorine-doped tin oxide (FTO) or Ni foams were decorated with Co(3)O(4)or Fe(2)O(3)nanoparticles by radio frequency sputtering. Upon functionalization, FTO-supported materials yielded a performance increase with respect to bare MnO2, with current densities at 1.65 Vvs. the reversible hydrogen electrode (RHE) up to 3.0 and 3.5 mA/cm(2)in the dark and under simulated sunlight, respectively. On the other hand, the use of highly porous and conductive Ni foam substrates enabled to maximize cooperative interfacial effects between catalyst components. The best performing Fe2O3/MnO(2)system provided a current density of 17.9 mA/cm(2)at 1.65 Vvs. RHE, an overpotential as low as 390 mV, and a Tafel slope of 69 mV/decade under dark conditions, comparing favorably with IrO(2)and RuO(2)benchmarks. Overall, the control of beta-MnO2/substrate interactions and the simultaneous surface property engineering pave the way to an efficient energy generation from abundant natural resources.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.5
Times cited: 5
DOI: 10.1002/CCTC.202000999
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“Effect of microstructure and internal stress on hydrogen absorption into Ni thin film electrodes during alkaline water electrolysis”. Delvaux A, Lumbeeck G, Idrissi H, Proost J, Electrochimica Acta 340, 135970 (2020). http://doi.org/10.1016/J.ELECTACTA.2020.135970
Abstract: Efforts to improve the cell efficiency of hydrogen production by water electrolysis continue to address the electrochemical kinetics of the oxygen and hydrogen evolution reactions in detail. The objective of this work is to study a parasitic reaction occurring during the hydrogen evolution reaction (HER), namely the absorption of hydrogen atoms into the bulk electrode. Effects of the electrode microstructure and internal stress on this reaction have been addressed as well in this paper. Ni thin film samples were deposited on a Si substrate by sputter deposition with different deposition pressures, resulting in different microstructures and varying levels of internal stress. These microstructures were first analyzed in detail by Transmission Electron Microscopy (TEM). Cathodic chrono-amperometric measurements and cyclic voltammetries have then been performed in a homemade electrochemical cell. These tests were coupled to a multi-beam optical sensor (MOS) in order to obtain in-situ curvature measurements during hydrogen absorption. Indeed, since hydrogen absorption in the thin film geometry results in a constrained volume expansion, internal stress generation during HER can be monitored by means of curvature measurements. Our results show that different levels of internal stress, grain size and twin boundary density can be obtained by varying the deposition parameters. From an electrochemical point of view, this paper highlights the fact that the electrochemical surface mechanisms during HER are the same for all the electrodes, regardless of their microstructure. However it is shown that the absolute amount of hydrogen being absorbed into the Ni thin films increases when the grain size is reduced, due to a higher grain boundaries density which are favourite absorption sites for hydrogen. At the same time, it was concluded that H-2 evolution is favoured at electrodes having a more compressive (i.e. a less tensile) internal stress. Finally, the subtle effect of microstructure on the hydrogen absorption rate will be discussed as well. (C) 2020 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.6
Times cited: 2
DOI: 10.1016/J.ELECTACTA.2020.135970
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“Fast pixelated detectors in scanning transmission electron microscopy. Part I: data acquisition, live processing, and storage”. Nord M, Webster RWH, Paton KA, McVitie S, McGrouther D, MacLaren I, Paterson GW, Microscopy And Microanalysis 26, Pii S1431927620001713 (2020). http://doi.org/10.1017/S1431927620001713
Abstract: The use of fast pixelated detectors and direct electron detection technology is revolutionizing many aspects of scanning transmission electron microscopy (STEM). The widespread adoption of these new technologies is impeded by the technical challenges associated with them. These include issues related to hardware control, and the acquisition, real-time processing and visualization, and storage of data from such detectors. We discuss these problems and present software solutions for them, with a view to making the benefits of new detectors in the context of STEM more accessible. Throughout, we provide examples of the application of the technologies presented, using data from a Medipix3 direct electron detector. Most of our software are available under an open source licence, permitting transparency of the implemented algorithms, and allowing the community to freely use and further improve upon them.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.8
Times cited: 4
DOI: 10.1017/S1431927620001713
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“Fast pixelated detectors in scanning transmission electron microscopy. part II : post-acquisition data processing, visualization, and structural characterization”. Paterson GW, Webster RWH, Ross A, Paton KA, Macgregor TA, McGrouther D, MacLaren I, Nord M, Microscopy And Microanalysis 26, 944 (2020). http://doi.org/10.1017/S1431927620024307
Abstract: Fast pixelated detectors incorporating direct electron detection (DED) technology are increasingly being regarded as universal detectors for scanning transmission electron microscopy (STEM), capable of imaging under multiple modes of operation. However, several issues remain around the post-acquisition processing and visualization of the often very large multidimensional STEM datasets produced by them. We discuss these issues and present open source software libraries to enable efficient processing and visualization of such datasets. Throughout, we provide examples of the analysis methodologies presented, utilizing data from a 256 x 256 pixel Medipix3 hybrid DED detector, with a particular focus on the STEM characterization of the structural properties of materials. These include the techniques of virtual detector imaging; higher-order Laue zone analysis; nanobeam electron diffraction; and scanning precession electron diffraction. In the latter, we demonstrate a nanoscale lattice parameter mapping with a fractional precision <= 6 x 10(-4) (0.06%).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.8
Times cited: 3
DOI: 10.1017/S1431927620024307
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“Identification of nano-width variants in a fully monoclinic martensitic Ni50Ti50 alloy by scanning electron microscope-based transmission Kikuchi diffraction and improved groupoid structure approach”. Zhao ZX, Ma X, Cao S, Li YY, Zeng CY, Wang DX, Yao X, Deng ZJ, Zhang XP, Materials Letters 281, 128624 (2020). http://doi.org/10.1016/J.MATLET.2020.128624
Abstract: Nano-width martensite plates in a fully martensitic Ni50Ti50 alloy are indexed successfully by using the off-axis transmission Kikuchi diffraction in scanning electron microscope (i.e., SEM-based TKD). The data obtained by SEM-TKD are effectively interpreted using an improved approach based on the framework of the theoretical groupoid structure method, where the equivalent variants transformed from the monoclinic variants are introduced to calculate all theoretical axis/angle pairs of rotation, and to formulate a complete list of source martensite to target martensite pairs. Consequently, B19' monoclinic martensite variants in NiTi alloys are identified unambiguously, by using numerical comparison between the experimental and theoretical rotation components, without the reference of retained parent phase. (C) 2020 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3
DOI: 10.1016/J.MATLET.2020.128624
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“Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO₃/SrTiO₃, interfaces”. Lebedev N, Stehno M, Rana A, Gauquelin N, Verbeeck J, Brinkman A, Aarts J, Journal Of Physics-Condensed Matter 33, 055001 (2020). http://doi.org/10.1088/1361-648X/ABC102
Abstract: We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the two-dimensional electron gas usually observed at interfaces between STO and LTO or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates the presence of spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.7
Times cited: 1
DOI: 10.1088/1361-648X/ABC102
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“Investigating the effect of sulphurization on volatility of compositions in Cu-poor and Sn-rich CZTS thin films”. Vishwakarma M, Agrawal K, Hadermann J, Mehta BR, Applied Surface Science 507, 145043 (2020). http://doi.org/10.1016/J.APSUSC.2019.145043
Abstract: In the present work, the Cu-poor and Sn-rich CZTS thin films were prepared in order to study the volatility of Sn with respect to other components. Thin film compositions were kept intentionally Sn-rich to understand the behaviour of loss and segregation of Sn during sulphurization. The homogeneous composition distribution in precursor thin films turns heterogeneous with a change in morphology after sulphurization. The inability of identifying nanoscale secondary phases in CZTS thin film by conventional analytical techniques such as XRD and Raman, can be fulfilled by employing HAADF-STEM analysis. XPS and HAADF-STEM analyses provide the quantification of nanoscale secondary phases across the thin film and surface, respectively. The volatility of Sn was revealed in the form of segregation in the middle layer of CZTS cross-sectional lamella rather than loss to annealing atmosphere. It was observed that among the cations of CZTS, Sn segregates more than Cu, while Zn segregates least. The nanoscale spurious phases were observed to vary across different regions in the sulphurized CZTS sample. The reactive annealing lead to grain growth and formation of grain boundary features in the CZTS thin films, where annealing significantly modifies the potential difference and band bending at grain boundaries with respect to intra-grains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.7
Times cited: 4
DOI: 10.1016/J.APSUSC.2019.145043
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