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Author Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J.
  Title Laser thermotreatment of the SnO2layers Type P1 Proceeding
  Year 1998 Publication Eurosensors XII, vols 1 and 2 Abbreviated Journal
  Volume Issue Pages 481-484
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract The optical and electrical properties and pi ase composition of magnetron sputtered antimony-doped SnOx thin films are investigated before and after laser thermotreatment The temperature dependencies on mobility and concentration of free charges are measured by Van der Pauw method. The gas sensitivity of SnOx has been measured before and after laser thermotreatment.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000077311200117 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0-7503-0536-3 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:104343 Serial 1798
Permanent link to this record
 
 
Author van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J.
  Title Microscopy of gemmological materials Type H3 Book chapter
  Year 1997 Publication Abbreviated Journal
  Volume Issue Pages 293-320
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Vch Place of Publication Weinheim Editor
  Language Wos A1995BC72X00044 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) Times cited 4 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:21419 Serial 2037
Permanent link to this record
 
 
Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
  Title Morphology and defects in shallow trench isolation structures Type A1 Journal article
  Year 1999 Publication Conference series of the Institute of Physics Abbreviated Journal
  Volume 164 Issue Pages 443-446
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000166835300094 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) Times cited 1 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:29690 Serial 2206
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
  Title New intermediate defect configuration in Si studied by in situ HREM irradiation Type A1 Journal article
  Year 1997 Publication Conference series of the Institute of Physics Abbreviated Journal
  Volume 157 Issue Pages 43-46
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000071954600006 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:21428 Serial 2318
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
  Title On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope Type A1 Journal article
  Year 1998 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A
  Volume 77 Issue 2 Pages 423-435
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000071976400010 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) Times cited 23 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:29671 Serial 2440
Permanent link to this record
 
 
Author Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H.
  Title Precipitation behavior in Cu-Co alloy Type P3 Proceeding
  Year 1998 Publication Abbreviated Journal
  Volume Issue Pages 205-206
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Kyoto Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:29682 Serial 2689
Permanent link to this record
 
 
Author Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J.
  Title Quantitative EFTEM study of germanium quantum dots Type P1 Proceeding
  Year 2001 Publication Abbreviated Journal
  Volume Issue Pages 345-346
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Rinton Press Place of Publication Princeton Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95716 Serial 2753
Permanent link to this record
 
 
Author Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
  Title Reliability of copper dual damascene influenced by pre-clean Type P1 Proceeding
  Year 2002 Publication Analysis Of Integrated Circuits Abbreviated Journal
  Volume Issue Pages 118-123
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Ieee Place of Publication New york Editor
  Language Wos 000177689400022 Publication Date 2003-06-25
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) Times cited 5 Open Access
  Notes Conference name: Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:104170 Serial 2865
Permanent link to this record
 
 
Author Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P.
  Title Stress analysis with convergent beam electron diffraction around NMOS transistors Type P1 Proceeding
  Year 2001 Publication Abbreviated Journal
  Volume Issue Pages 359-360
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Princeton University Press Place of Publication Princeton, N.J. Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95736 Serial 3176
Permanent link to this record
 
 
Author Nistor, L.; van Landuyt, J.; Ralchenko, V.
  Title Structural aspects of CVD idamond wafers grown at different hydrogen flow rates Type A1 Journal article
  Year 1999 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
  Volume 171 Issue Pages 5-10
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Berlin Editor
  Language Wos 000081733800007 Publication Date 2002-09-10
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) Times cited 15 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:29688 Serial 3207
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A.
  Title Structural studies of nanocrystalline diamond thin films Type A1 Journal article
  Year 1997 Publication Materials science forum Abbreviated Journal
  Volume 239-241 Issue Pages 115-118
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Lausanne Editor
  Language Wos A1997BH33W00026 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:21403 Serial 3260
Permanent link to this record
 
 
Author Vanhellemont, J.; Bender, H.; van Landuyt, J.
  Title TEM studies of processed Si device materials Type A1 Journal article
  Year 1997 Publication Conference series of the Institute of Physics Abbreviated Journal
  Volume 157 Issue Pages 393-402
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000071954600079 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:21430 Serial 3486
Permanent link to this record
 
 
Author Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J.
  Title TEM study on precipitation behavior in Cu-Co alloys Type A1 Journal article
  Year 1998 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
  Volume 168 Issue Pages 27-35
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Berlin Editor
  Language Wos 000075226500005 Publication Date 2002-09-10
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) Times cited 18 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:29677 Serial 3494
Permanent link to this record
 
 
Author van Landuyt, J.
  Title Een tempel voor elektronenmicroscopie “kijken naar atomen” Type A3 Journal article
  Year 1998 Publication Fonds informatief Abbreviated Journal
  Volume 38 Issue Pages 13-17
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Antwerpen Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0776-8133 ISBN Additional Links UA library record
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:29673 Serial 3495
Permanent link to this record
 
 
Author Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C.
  Title The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals Type P1 Proceeding
  Year 2000 Publication Abbreviated Journal
  Volume Issue Pages 167-171
  Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
  Address
  Corporate Author Thesis
  Publisher Soc Imaging Science Technology Place of Publication Springfield Editor
  Language Wos 000183315900046 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
  Impact Factor (up) Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:95774 Serial 3587
Permanent link to this record
 
 
Author Schryvers, D.; Van Landuyt, J.
  Title Electron microscopy study of twin sequences and branching in NissAl34 3R martensite Type A3 Journal Article
  Year 1992 Publication ICOMAT Abbreviated Journal
  Volume Issue Pages
  Keywords A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
  Abstract Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links
  Impact Factor (up) Times cited Open Access
  Notes Approved no
  Call Number EMAT @ emat @ Serial 5054
Permanent link to this record
 
 
Author van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R.
  Title The influence of crystal thickness on the image tone Type A1 Journal article
  Year 2003 Publication Journal of imaging science Abbreviated Journal J Imaging Sci Techn
  Volume 47 Issue 2 Pages 133-138
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract It is known that the neutral image tone of a developed photographic film becomes brownish when the thickness of the original silver halide tabular crystals is reduced. We investigate by electron microscopy to what extent the silver filament structure has changed and how it induces the shift in image tone. Therefore, two samples of AgBr {111} tabular crystals with average thicknesses of 160 nm and 90 nm respectively, are compared. It is shown that the dimensions and defect structure of the filaments are comparable, but that the 90 nm crystals result in a more widely spaced structure, which explains the shift in image tone on a qualitative level. The influence of the addition of an image toner, i.e., phenylmercaptotetrazole, on the filament structure is also investigated. An even more open filament structure of longer, but smaller filaments was observed.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Springfield, Va Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 8750-9237; 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.348 Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:48384 Serial 1619
Permanent link to this record
 
 
Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C.
  Title Influence of twinning on the morphology of AgBr and AgCl microcrystals Type A1 Journal article
  Year 2001 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
  Volume 45 Issue Pages 349-356
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Springfield, Va Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.348 Times cited Open Access
  Notes Approved Most recent IF: 0.348; 2001 IF: NA
  Call Number UA @ lucian @ c:irua:48381 Serial 1657
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
  Title New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views Type A1 Journal article
  Year 1997 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
  Volume 41 Issue Pages 301-307
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Springfield, Va Editor
  Language Wos 000077457600017 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.348 Times cited 1 Open Access
  Notes Approved Most recent IF: 0.348; 1997 IF: NA
  Call Number UA @ lucian @ c:irua:21346 Serial 2324
Permanent link to this record
 
 
Author van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; van Roost, C.; de Keyzer, R.
  Title A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals Type A1 Journal article
  Year 2001 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
  Volume 45 Issue Pages 83-90
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Springfield, Va Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.348 Times cited Open Access
  Notes Approved Most recent IF: 0.348; 2001 IF: NA
  Call Number UA @ lucian @ c:irua:48380 Serial 3490
Permanent link to this record
 
 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R.
  Title A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals Type A1 Journal article
  Year 1996 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
  Volume 40 Issue Pages 189-201
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Springfield, Va Editor
  Language Wos A1996VL09200003 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.349 Times cited 4 Open Access
  Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #
  Call Number UA @ lucian @ c:irua:15428 Serial 418
Permanent link to this record
 
 
Author Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K.
  Title Microstructure of Mn-doped, spin-cast FeSi2 Type A1 Journal article
  Year 1997 Publication Journal of electron microscopy Abbreviated Journal Microscopy-Jpn
  Volume 46 Issue 3 Pages 221-225
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Tokyo Editor
  Language Wos A1997XP43400004 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0022-0744; 1477-9986 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.9 Times cited 3 Open Access
  Notes Approved Most recent IF: NA
  Call Number UA @ lucian @ c:irua:21410 Serial 2070
Permanent link to this record
 
 
Author Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M.
  Title Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport Type A1 Journal article
  Year 1993 Publication Crystal research and technology Abbreviated Journal Cryst Res Technol
  Volume 28 Issue 8 Pages 1051-1061
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Berlin Editor
  Language Wos A1993MN86700003 Publication Date 2007-01-13
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0232-1300;1521-4079; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.935 Times cited 1 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:6788 Serial 952
Permanent link to this record
 
 
Author Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C.
  Title SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta Type A1 Journal article
  Year 1993 Publication Physica: C : superconductivity Abbreviated Journal Physica C
  Volume 210 Issue 3-4 Pages 439-446
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Amsterdam Editor
  Language Wos A1993LG46100018 Publication Date 2002-10-17
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.942 Times cited 18 Open Access
  Notes Approved PHYSICS, APPLIED 47/145 Q2 #
  Call Number UA @ lucian @ c:irua:102977 Serial 3557
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
  Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
  Volume 11 Issue 11 Pages 1194-1202
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
  Address
  Corporate Author Thesis
  Publisher Inst Materials Place of Publication London Editor
  Language Wos A1995TQ95100016 Publication Date 2014-01-09
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 0.995 Times cited 7 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 
 
Author Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J.
  Title The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 Type A1 Journal article
  Year 1996 Publication Journal of modern optics Abbreviated Journal J Mod Optic
  Volume 43 Issue 9 Pages 1773-1784
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear.
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos A1996VF31900002 Publication Date 2007-07-07
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0950-0340;1362-3044; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 1.008 Times cited 11 Open Access
  Notes Approved PHYSICS, APPLIED 47/145 Q2 #
  Call Number UA @ lucian @ c:irua:95238 Serial 3594
Permanent link to this record
 
 
Author Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J.
  Title A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant Type A1 Journal article
  Year 1994 Publication Philosophical magazine letters Abbreviated Journal Phil Mag Lett
  Volume 70 Issue 5 Pages 303-310
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling.
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos A1994PQ20900008 Publication Date 2007-07-08
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0950-0839;1362-3036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 1.087 Times cited 4 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:99816 Serial 3715
Permanent link to this record
 
 
Author Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O.
  Title Defect characterization in high temperature implanted 6H-SiC using TEM Type A1 Journal article
  Year 1997 Publication Nuclear instruments and methods in physics research: B Abbreviated Journal Nucl Instrum Meth B
  Volume 127/128 Issue Pages 347-349
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos A1997XG60500078 Publication Date 2002-07-25
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 1.109 Times cited 17 Open Access
  Notes Approved Most recent IF: 1.109; 1997 IF: 1.016
  Call Number UA @ lucian @ c:irua:21411 Serial 613
Permanent link to this record
 
 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
  Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B
  Volume 120 Issue 1-4 Pages 186-189
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
  Address
  Corporate Author Thesis
  Publisher Elsevier Place of Publication Amsterdam Editor
  Language Wos A1996VZ24500040 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 1.124 Times cited 2 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:95882 Serial 947
Permanent link to this record
 
 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B
  Volume 112 Issue 1-4 Pages 325-329
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
  Address
  Corporate Author Thesis
  Publisher Elsevier science bv Place of Publication Amsterdam Editor
  Language Wos A1996UW20100069 Publication Date 2002-07-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor (up) 1.124 Times cited 9 Open Access
  Notes Approved no
  Call Number UA @ lucian @ c:irua:95886 Serial 1742
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