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Author Vanhellemont, J.; Bender, H.; van Landuyt, J. openurl 
  Title TEM studies of processed Si device materials Type A1 Journal article
  Year (down) 1997 Publication Conference series of the Institute of Physics Abbreviated Journal  
  Volume 157 Issue Pages 393-402  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Recent developments in the field of TEM characterisation of Si device materials are discussed and illustrated by a few case studies of material in different stages of various kinds of processing. Important challenges are the ever decreasing defect densities and device feature sizes. Defect delineation techniques using large area inspection tools yielding accurate coordinates of the defects to be studied have therefore become an essential part of the TEM analysis procedure. The possibility to transfer these defect coordinates without loss of accuracy to tools for local TEM specimen preparation is also a conditio sine qua non for a successful analysis. Insitu TEM remains important as dynamic processes can be observed and analysed under well defined experimental conditions. As case studies illustrating new developments, results are presented on defects in as-grown Ct silicon, on in-situ studies in processed silicon, on problem sites in advanced integrated circuit structures and on assessment of localised strain fields in the nm size scale.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000071954600079 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21430 Serial 3486  
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