| |
Records |
|
Author |
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
| |
Title |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
Type |
A1 Journal article |
| |
Year |
2011 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
109 |
Issue |
12 |
Pages |
124503-124503,12 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electron-phonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the evaluation of the Zener tunneling current under any three-dimensional potential profile. For a one-dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field, and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p-n diodes with different doping concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model, but a direct numerical treatment is required for low bias conditions. |
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Address |
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Corporate Author |
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Thesis |
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| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000292331200134 |
Publication Date |
2011-06-21 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor  |
2.068 |
Times cited |
41 |
Open Access |
|
| |
Notes |
; William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). ; |
Approved |
Most recent IF: 2.068; 2011 IF: 2.168 |
| |
Call Number |
UA @ lucian @ c:irua:90808 |
Serial |
1325 |
| Permanent link to this record |
| |
|
| |
|
Author |
Milovanovic, S.P.; Masir, M.R.; Peeters, F.M. |
| |
Title |
Graphene hall bar with an asymmetric pn-junction |
Type |
A1 Journal article |
| |
Year |
2013 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
113 |
Issue |
19 |
Pages |
193701-193708 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)]. |
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Address |
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Corporate Author |
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Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000319295200022 |
Publication Date |
2013-05-16 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
7 |
Open Access |
|
| |
Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. We acknowledge fruitful discussions with M. Barbier. |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
| |
Call Number |
UA @ lucian @ c:irua:108999 |
Serial |
1371 |
| Permanent link to this record |
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|
| |
|
Author |
Dong, H.M.; Xu, W.; Peeters, F.M. |
| |
Title |
High-field transport properties of graphene |
Type |
A1 Journal article |
| |
Year |
2011 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
110 |
Issue |
6 |
Pages |
063704,1-063704,6 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors. |
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Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000295619300059 |
Publication Date |
2011-09-19 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
17 |
Open Access |
|
| |
Notes |
; This work was supported by the National Natural Science Foundation of China (Grant No. 10974206) and the Department of Science and Technology of Yunnan Province. ; |
Approved |
Most recent IF: 2.068; 2011 IF: 2.168 |
| |
Call Number |
UA @ lucian @ c:irua:93614 |
Serial |
1433 |
| Permanent link to this record |
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|
| |
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Author |
Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C. |
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Title |
High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
85 |
Issue |
4 |
Pages |
2119-2123 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0]. |
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Address |
|
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Corporate Author |
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Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000078403000017 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
6 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 1999 IF: 2.275 |
| |
Call Number |
UA @ lucian @ c:irua:103977 |
Serial |
1455 |
| Permanent link to this record |
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|
| |
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Author |
Milovanović, S.P.; Moldovan, D.; Peeters, F.M. |
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Title |
Veselago lensing in graphene with a p-n junction: Classical versus quantum effects |
Type |
A1 Journal article |
| |
Year |
2015 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
118 |
Issue |
118 |
Pages |
154308 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
|
Wos |
000363535800022 |
Publication Date |
2015-10-20 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
19 |
Open Access |
|
| |
Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. |
Approved |
Most recent IF: 2.068; 2015 IF: 2.183 |
| |
Call Number |
c:irua:129452 |
Serial |
3969 |
| Permanent link to this record |
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Author |
Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B. |
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Title |
Hydrogen impurities and native defects in CdO |
Type |
A1 Journal article |
| |
Year |
2011 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
110 |
Issue |
6 |
Pages |
063521,1-063521,7 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) |
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Abstract |
We have used first-principles calculations based on density functional theory to study point defects in CdO within the local density approximation and beyond (LDA+U). Hydrogen interstitials and oxygen vacancies are found to act as shallow donors and can be interpreted as the cause of conductivity in CdO. Hydrogen can also occupy an oxygen vacancy in its substitutional form and also acts as a shallow donor. Similar to what was found for ZnO and MgO, hydrogen creates a multicenter bond with its six oxygen neighbors in CdO. The charge neutrality level for native defects and hydrogen impurities has been calculated. It is shown that in the case of native defects, it is not uniquely defined. Indeed, this level depends highly on the chemical potentials of the species and one can obtain different values for different end states in the experiment. Therefore, a comparison with experiment can only be made if the chemical potentials of the species in the experiment are well defined. However, for the hydrogen interstitial defect, since this level is independent of the chemical potential of hydrogen, one can obtain a unique value for the charge neutrality level. We find that the Fermi level stabilizes at 0.43 eV above the conduction band minimum in the case of the hydrogen interstitial defect, which is in good agreement with the experimentally reported value of 0.4 eV. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000295619300041 |
Publication Date |
2011-09-23 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
13 |
Open Access |
|
| |
Notes |
; The authors gratefully acknowledge financial support from the IWT-Vlaanderen through the ISIMADE project, the FWO-Vlaanderen through Project G.0191.08 and the BOF-NOI of the University of Antwerp. This work was carried out using the HPC infrastructure at the University of Antwerp (CalcUA), a division of the Flemish Supercomputer Center VSC. ; |
Approved |
Most recent IF: 2.068; 2011 IF: 2.168 |
| |
Call Number |
UA @ lucian @ c:irua:93613 |
Serial |
1533 |
| Permanent link to this record |
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| |
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Author |
Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G. |
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Title |
Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
90 |
Issue |
3 |
Pages |
1429-1435 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
|
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Address |
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Corporate Author |
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Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000169868300052 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
2 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
| |
Call Number |
UA @ lucian @ c:irua:54816 |
Serial |
1649 |
| Permanent link to this record |
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Author |
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
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Title |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
Type |
A1 Journal article |
| |
Year |
2014 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
115 |
Issue |
18 |
Pages |
184503-184509 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000336919400048 |
Publication Date |
2014-05-14 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
| |
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
34 |
Open Access |
|
| |
Notes |
; Quentin Smets and Devin Verreck gratefully acknowledge the support of a Ph. D. stipend from IWT-Vlaanderen. This work was supported by imec's industrial affiliation program. The authors thank Kim Baumans, Johan Feyaerts, Johan De Cooman, Alireza Alian, and Jos Moonens for their support in process development; Bastien Douhard and Joris Delmotte for SIMS characterization; Alain Moussa for AFM characterization; Joris Van Laer and Tom Daenen for their support in electrical characterization; Kuo-Hsing Kao, Mehbuba Tanzid, and Ali Pourghaderi for their support in modeling. ; |
Approved |
Most recent IF: 2.068; 2014 IF: 2.183 |
| |
Call Number |
UA @ lucian @ c:irua:118009 |
Serial |
1667 |
| Permanent link to this record |
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| |
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Author |
Shapoval, O.; Huehn, S.; Verbeeck, J.; Jungbauer, M.; Belenchuk, A.; Moshnyaga, V. |
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Title |
Interface-controlled magnetism and transport of ultrathin manganite films |
Type |
A1 Journal article |
| |
Year |
2013 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
113 |
Issue |
17 |
Pages |
17c711-3 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
We report ferromagnetic, T-C = 240 K, and metallic, T-MI = 250 K, behaviors of a three unit cell thick interface engineered lanthanum manganite film, grown by metalorganic aerosol deposition technique on SrTiO3(100) substrates. Atomically resolved electron microscopy and chemical analysis show that ultrathin manganite films start to grow with La-O layer on a strongly Mn/Ti-intermixed interface, engineered by an additional deposition of 2 u.c. of Sr-Mn-O. Such interface engineering results in a hole-doped manganite layer and stabilizes ferromagnetism and metallic conductivity down to the thickness of d = 3 u.c. The films with d = 8 u.c. demonstrate a bulk-like transport behavior with T-MI similar to T-C = 310 – 330 K. (C) 2013 American Institute of Physics. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
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Wos |
000319292800195 |
Publication Date |
2013-03-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
7 |
Open Access |
|
| |
Notes |
Ifox; Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO; |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
| |
Call Number |
UA @ lucian @ c:irua:109009UA @ admin @ c:irua:109009 |
Serial |
1692 |
| Permanent link to this record |
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Author |
Zhang, M.-L.; March, N.H.; Peeters, A.; van Alsenoy, C.; Howard, I.; Lamoen, D.; Leys, F. |
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Title |
Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
93 |
Issue |
|
Pages |
1525-1532 |
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Keywords |
A1 Journal article; Electron Microscopy for Materials Science (EMAT); |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000180630200031 |
Publication Date |
2003-02-10 |
| |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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| |
Series Volume |
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Series Issue |
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Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
| |
Impact Factor |
2.068 |
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2003 IF: 2.171 |
| |
Call Number |
UA @ lucian @ c:irua:41405 |
Serial |
1844 |
| Permanent link to this record |
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|
| |
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Author |
Milovanović, S.P.; Masir, M.R.; Peeters, F.M. |
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Title |
Magnetic electron focusing and tuning of the electron current with a pn-junction |
Type |
A1 Journal article |
| |
Year |
2014 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
115 |
Issue |
4 |
Pages |
043719-6 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
Transverse magnetic focusing properties of graphene using a ballistic four terminal structure are investigated. The electric response is obtained using the semiclassical billiard model. The transmission exhibits pronounced peaks as a consequence of skipping orbits at the edge of the structure. When we add a pn-junction between the two probes, snake states along the pn-interface appear. Injected electrons are guided by the pn-interface to one of the leads depending on the value of the applied magnetic field. Oscillations in the resistance are found depending on the amount of particles that end up in each lead. |
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Address |
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Corporate Author |
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Thesis |
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| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000331210800066 |
Publication Date |
2014-01-30 |
| |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
21 |
Open Access |
|
| |
Notes |
This work was supported by the Flemish Science Foundation (FWO-Vl), the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN, and the Methusalem Foundation of the Flemish government. |
Approved |
Most recent IF: 2.068; 2014 IF: 2.183 |
| |
Call Number |
UA @ lucian @ c:irua:115801 |
Serial |
1866 |
| Permanent link to this record |
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| |
|
Author |
Papp, G.; Peeters, F.M. |
| |
Title |
Magnetoresistance in a hybrid ferromagnetic/semiconductor device |
Type |
A1 Journal article |
| |
Year |
2010 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
107 |
Issue |
6 |
Pages |
063718,1-063718,4 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
Ballistic transport of a two-dimensional electron gas (2DEG) in a rectangle shaped wire, subjected to a local nonhomogeneous magnetic field that results from an in-plane magnetized ferromagnetic (FM) strip deposited above the 2DEG, is investigated theoretically. We found a positive magnetoresistance (MR), which exhibits hysteresis behavior with respect to the direction of the magnetic field sweep, in agreement with a recent experiment. This positive MR can be tuned by applying a gate voltage to the FM strip. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000276210800063 |
Publication Date |
2010-04-01 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
10 |
Open Access |
|
| |
Notes |
; ; |
Approved |
Most recent IF: 2.068; 2010 IF: 2.079 |
| |
Call Number |
UA @ lucian @ c:irua:82281 |
Serial |
1927 |
| Permanent link to this record |
| |
|
| |
|
Author |
Hao, Y.L.; Peeters, F.M. |
| |
Title |
Micro-Hall bar as a sensor to detect the interaction of nanoscale ferromagnetic disks and columns |
Type |
A1 Journal article |
| |
Year |
2007 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
101 |
Issue |
12 |
Pages |
123718,1-4 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000247625700078 |
Publication Date |
2007-07-05 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
2.068 |
Times cited |
|
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2007 IF: 2.171 |
| |
Call Number |
UA @ lucian @ c:irua:69646 |
Serial |
2022 |
| Permanent link to this record |
| |
|
| |
|
Author |
Herrebout, D.; Bogaerts, A.; Yan, M.; Gijbels, R.; Goedheer, W.; Vanhulsel, A. |
| |
Title |
Modeling of a capacitively coupled radio-frequency methane plasma: comparison between a one-dimensional and a two-dimensional fluid model |
Type |
A1 Journal article |
| |
Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
92 |
Issue |
5 |
Pages |
2290-2295 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000177548500011 |
Publication Date |
2002-09-18 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
15 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
| |
Call Number |
UA @ lucian @ c:irua:40188 |
Serial |
2113 |
| Permanent link to this record |
| |
|
| |
|
Author |
Ariskin, D.A.; Schweigert, I.V.; Alexandrov, A.L.; Bogaerts, A.; Peeters, F.M. |
| |
Title |
Modeling of chemical processes in the low pressure capacitive radio frequency discharges in a mixture of Ar/C2H2 |
Type |
A1 Journal article |
| |
Year |
2009 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
105 |
Issue |
6 |
Pages |
063305,1-063305,9 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
We study the properties of a capacitive 13.56 MHz discharge with a mixture of Ar/C<sub>2</sub>H<sub>2</sub> taking into account the plasmochemistry and growth of heavy hydrocarbons. A hybrid model was developed to combine the kinetic description for electron motion and the fluid approach for negative and positive ion transports and plasmochemical processes. A significant change in plasma parameters related to injection of 5.8% portion of acetylene in argon was observed and analyzed. We found that the electronegativity of the mixture is about 30%. The densities of negatively and positively charged heavy hydrocarbons are sufficiently large to be precursors for the formation of nanoparticles in the discharge volume. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000264774000059 |
Publication Date |
2009-03-26 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
21 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
| |
Call Number |
UA @ lucian @ c:irua:74496 |
Serial |
2121 |
| Permanent link to this record |
| |
|
| |
|
Author |
Bogaerts, A.; Yan, M.; Gijbels, R.; Goedheer, W. |
| |
Title |
Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
86 |
Issue |
6 |
Pages |
2990-3001 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000082232400010 |
Publication Date |
2002-07-26 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
18 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 1999 IF: 2.275 |
| |
Call Number |
UA @ lucian @ c:irua:28320 |
Serial |
2127 |
| Permanent link to this record |
| |
|
| |
|
Author |
Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. |
| |
Title |
Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells |
Type |
A1 Journal article |
| |
Year |
2009 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
105 |
Issue |
8 |
Pages |
084310,1-084310,8 |
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
| |
Abstract |
The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements. |
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Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000268064700149 |
Publication Date |
2009-04-23 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
| |
Impact Factor |
2.068 |
Times cited |
|
Open Access |
|
| |
Notes |
Fwo G.0425.05; Esteem 026019 |
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
| |
Call Number |
UA @ lucian @ c:irua:78282 |
Serial |
2160 |
| Permanent link to this record |
| |
|
| |
|
Author |
Gou, F.; Neyts, E.; Eckert, M.; Tinck, S.; Bogaerts, A. |
| |
Title |
Molecular dynamics simulations of Cl+ etching on a Si(100) surface |
Type |
A1 Journal article |
| |
Year |
2010 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
107 |
Issue |
11 |
Pages |
113305,1-113305,6 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
Molecular dynamics simulations using improved TersoffBrenner potential parameters were performed to investigate Cl+ etching of a {2×1} reconstructed Si(100) surface. Steady-state Si etching accompanying the Cl coverage of the surface is observed. Furthermore, a steady-state chlorinated reaction layer is formed. The thickness of this reaction layer is found to increase with increasing energy. The stoichiometry of SiClx species in the reaction layer is found to be SiCl:SiCl2:SiCl3 = 1.0:0.14:0.008 at 50 eV. These results are in excellent agreement with available experimental data. While elemental Si products are created by physical sputtering, most SiClx (0<x<4) etch products are produced by chemical-enhanced physical sputtering. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000278907100018 |
Publication Date |
2010-06-04 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
15 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2010 IF: 2.079 |
| |
Call Number |
UA @ lucian @ c:irua:82663 |
Serial |
2175 |
| Permanent link to this record |
| |
|
| |
|
Author |
Sen, H.S.; Sahin, H.; Peeters, F.M.; Durgun, E. |
| |
Title |
Monolayers of MoS2 as an oxidation protective nanocoating material |
Type |
A1 Journal article |
| |
Year |
2014 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
116 |
Issue |
8 |
Pages |
083508 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS2 monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS2 monolayer is prevented by a very high diffusion barrier indicating that MoS2 can serve as a protective layer for oxidation. The analysis is extended to WS2 and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS2 and WS2 monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000342821600017 |
Publication Date |
2014-08-27 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
52 |
Open Access |
|
| |
Notes |
; This work was supported by the bilateral project between TUBITAK (through Grant No. 113T050) and Flemish Science Foundation (FWO-Vl). The calculations were performed at TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). E.D. acknowledges support from Bilim Akademisi-The Science Academy, Turkey under the BAGEP program. H.S. is supported by an FWO Pegasus-long Marie Curie Fellowship. ; |
Approved |
Most recent IF: 2.068; 2014 IF: 2.183 |
| |
Call Number |
UA @ lucian @ c:irua:121101 |
Serial |
2194 |
| Permanent link to this record |
| |
|
| |
|
Author |
Dhong, H.M.; Zhang, J.; Peeters, F.M.; Xu, W. |
| |
Title |
Optical conductance and transmission in bilayer graphene |
Type |
A1 Journal article |
| |
Year |
2009 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
106 |
Issue |
4 |
Pages |
043103,1-043103,6 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
We present a theoretical study of the optoelectronic properties of bilayer graphene. The optical conductance and transmission coefficient are calculated using the energy-balance equation derived from a Boltzmann equation for an air/graphene/dielectric-wafer system. For short wavelengths (<0.2 µm), we obtain the universal optical conductance =e2/(2). Interestingly, there exists an optical absorption window in the wavelength range 10100 µm, which is induced by different transition energies required for inter- and intra-band optical absorptions in the presence of the MossBurstein effect. As a result, the position and width of this absorption window depend sensitively on temperature, carrier density, and sample mobility of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000270083800004 |
Publication Date |
2009-08-20 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
11 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
| |
Call Number |
UA @ lucian @ c:irua:79315 |
Serial |
2472 |
| Permanent link to this record |
| |
|
| |
|
Author |
Li, L.L.; Xu, W.; Peeters, F.M. |
| |
Title |
Optical conductivity of topological insulator thin films |
Type |
A1 Journal article |
| |
Year |
2015 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
117 |
Issue |
117 |
Pages |
175305 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k . p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi2Se3-based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy (h) over bar omega < 200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200 < (h) over bar omega < 300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value sigma(0) = e(2) / (8<(h)over bar>) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime ((h) over bar omega > 300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF. (C) 2015 AIP Publishing LLC. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000354984100615 |
Publication Date |
2015-05-06 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
9 |
Open Access |
|
| |
Notes |
; This work was supported by the National Natural Science Foundation of China (Grant No. 11304316), Ministry of Science and Technology of China (Grant No. 2011YQ130018), Department of Science and Technology of Yunnan Province, and by the Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 2.068; 2015 IF: 2.183 |
| |
Call Number |
c:irua:126412 |
Serial |
2473 |
| Permanent link to this record |
| |
|
| |
|
Author |
Neyts, E.; Yan, M.; Bogaerts, A.; Gijbels, R. |
| |
Title |
Particle-in-cell/Monte Carlo simulations of a low-pressure capacitively coupled radio-frequency discharge: effect of adding H2 to an Ar discharge |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
93 |
Issue |
|
Pages |
5025-5033 |
| |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
| |
Abstract |
|
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000182296700010 |
Publication Date |
2003-04-17 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
15 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2003 IF: 2.171 |
| |
Call Number |
UA @ lucian @ c:irua:44012 |
Serial |
2562 |
| Permanent link to this record |
| |
|
| |
|
Author |
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
| |
Title |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
Type |
A1 Journal article |
| |
Year |
2013 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
113 |
Issue |
18 |
Pages |
184507-184508 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrodinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored. (C) 2013 AIP Publishing LLC. |
| |
Address |
|
| |
Corporate Author |
|
Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000319294100093 |
Publication Date |
2013-05-10 |
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
4 |
Open Access |
|
| |
Notes |
; This work was supported by the Flemish Science Foundation (FWO-VI), and the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC. ; |
Approved |
Most recent IF: 2.068; 2013 IF: 2.185 |
| |
Call Number |
UA @ lucian @ c:irua:109651 |
Serial |
2599 |
| Permanent link to this record |
| |
|
| |
|
Author |
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
| |
Title |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
Type |
A1 Journal article |
| |
Year |
2009 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
106 |
Issue |
8 |
Pages |
083704,1-083704,9 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
| |
Abstract |
We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent methodmaking use of a nonuniform spatial mesh and of the Broyden second methodto solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high- insulator, to Coulomb scattering interface traps or oxide chargesignored in our calculationsand to different channel structures employed. |
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Address |
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Corporate Author |
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Thesis |
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| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000271358100050 |
Publication Date |
2009-10-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
29 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
| |
Call Number |
UA @ lucian @ c:irua:80137 |
Serial |
2617 |
| Permanent link to this record |
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|
| |
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Author |
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
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Title |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
Type |
A1 Journal article |
| |
Year |
2014 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
115 |
Issue |
5 |
Pages |
053706-53708 |
| |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement. (C) 2014 AIP Publishing LLC. |
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Address |
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Corporate Author |
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Thesis |
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| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
| |
Language |
|
Wos |
000331645900040 |
Publication Date |
2014-02-05 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
15 |
Open Access |
|
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Notes |
; D. Verreck acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by imec's Industrial Affiliation Program. ; |
Approved |
Most recent IF: 2.068; 2014 IF: 2.183 |
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Call Number |
UA @ lucian @ c:irua:115825 |
Serial |
2780 |
| Permanent link to this record |
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|
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Author |
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
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Title |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
Type |
A1 Journal article |
| |
Year |
2004 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
96 |
Issue |
|
Pages |
2305-2310 |
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Keywords |
A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT) |
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Abstract |
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| |
Address |
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Corporate Author |
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Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000223055100081 |
Publication Date |
2004-08-02 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
14 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2004 IF: 2.255 |
| |
Call Number |
UA @ lucian @ c:irua:49454 |
Serial |
2792 |
| Permanent link to this record |
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|
| |
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Author |
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
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Title |
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
93 |
Issue |
|
Pages |
1230-1240 |
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Keywords |
A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT) |
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Abstract |
|
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Address |
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Corporate Author |
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Thesis |
|
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000180134200069 |
Publication Date |
2003-01-03 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
|
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Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
16 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2003 IF: 2.171 |
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Call Number |
UA @ lucian @ c:irua:40874 |
Serial |
2793 |
| Permanent link to this record |
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Author |
Papp, G.; Peeters, F.M. |
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Title |
Resistance maps for a submicron Hall electrosensor in the diffusive regime |
Type |
A1 Journal article |
| |
Year |
2007 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
101 |
Issue |
11 |
Pages |
113717,1-6 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
|
| |
Address |
|
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Corporate Author |
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Thesis |
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000247306000084 |
Publication Date |
2007-06-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
|
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Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
7 |
Open Access |
|
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Notes |
|
Approved |
Most recent IF: 2.068; 2007 IF: 2.171 |
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Call Number |
UA @ lucian @ c:irua:69645 |
Serial |
2879 |
| Permanent link to this record |
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Author |
Papp, G.; Peeters, F.M. |
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Title |
Resistance maps from local probing of a ballistic mesoscopic Hall bar |
Type |
A1 Journal article |
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Year |
2007 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
101 |
Issue |
6 |
Pages |
063715,1-4 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
|
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Address |
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Corporate Author |
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Thesis |
|
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
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Wos |
000245317700086 |
Publication Date |
2007-03-30 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
5 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2007 IF: 2.171 |
| |
Call Number |
UA @ lucian @ c:irua:64299 |
Serial |
2880 |
| Permanent link to this record |
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Author |
Cornelissens, Y.G.; Peeters, F.M. |
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Title |
Response function of a Hall magnetosensor in the diffusive regime |
Type |
A1 Journal article |
| |
Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
| |
Volume |
92 |
Issue |
4 |
Pages |
2006-2012 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Two-dimensional electron gas systems patterned into micrometer Hall bars can be used as Hall magnetosensors. In this way, ballistic Hall probes have already been studied and used successfully. Here, the response function of a Hall sensor is determined in the diffusive regime, which allows this device to be used as a magnetosensor for the determination of inhomogeneous magnetic field distributions. Furthermore, the influence of the geometry of the Hall bar on this response function, such as circular corners and asymmetry in the probes, is also investigated and appears to be non-negligible. (C) 2002 American Institute of Physics. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
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Language |
|
Wos |
000177171700046 |
Publication Date |
2002-09-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
| |
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
| |
Impact Factor |
2.068 |
Times cited |
24 |
Open Access |
|
| |
Notes |
|
Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
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Call Number |
UA @ lucian @ c:irua:102826 |
Serial |
2897 |
| Permanent link to this record |
