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Author Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W.
  Title Compositional characterization of nickel silicides by HAADF-STEM imaging Type A1 Journal article
  Year 2011 Publication Journal of materials science Abbreviated Journal J Mater Sci
  Volume 46 Issue 7 Pages 2001-2008
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract A methodology for the quantitative compositional characterization of nickel silicides by high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging is presented. HAADF-STEM images of a set of nickel silicide reference samples Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 are taken at identical experimental conditions. The correlation between sample thickness and HAADF-STEM intensity is discussed. In order to quantify the relationship between the experimental Z-contrast intensities and the composition of the analysed layers, the ratio of the HAADF-STEM intensity to the sample thickness or to the intensity of the silicon substrate is determined for each nickel silicide reference sample. Diffraction contrast is still detected on the HAADF-STEM images, even though the detector is set at the largest possible detection angle. The influence on the quantification results of intensity fluctuations caused by diffraction contrast and channelling is examined. The methodology is applied to FUSI gate devices and to horizontal TFET devices with different nickel silicides formed on source, gate and drain. It is shown that, if the elements which are present are known, this methodology allows a fast quantitative 2-dimensional compositional analysis.
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000286633000002 Publication Date 2011-01-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0022-2461;1573-4803; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.599 Times cited 1 Open Access
  Notes Approved Most recent IF: 2.599; 2011 IF: 2.015
  Call Number (up) UA @ lucian @ c:irua:88950 Serial 446
Permanent link to this record
 

 
Author Lindner, H.; Loper, K.H.; Hahn, D.W.; Niemax, K.
  Title The influence of laser-particle interaction in laser induced breakdown spectroscopy and laser ablation inductively coupled plasma spectrometry Type A1 Journal article
  Year 2011 Publication Spectrochimica acta: part B : atomic spectroscopy Abbreviated Journal Spectrochim Acta B
  Volume 66 Issue 2 Pages 179-185
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract Particles produced by previous laser shots may have significant influence on the analytical signal in laser-induced breakdown spectroscopy (LIBS) and laser ablation inductively coupled plasma (LA-ICP) spectrometry if they remain close to the position of laser sampling. The effects of these particles on the laser-induced breakdown event are demonstrated in several ways. LIBS-experiments were conducted in an ablation cell at atmospheric conditions in argon or air applying a dual-pulse arrangement with orthogonal pre-pulse, i.e., plasma breakdown in a gas generated by a focussed laser beam parallel and close to the sample surface followed by a delayed crossing laser pulse in orthogonal direction which actually ablates material from the sample and produces the LIBS plasma. The optical emission of the LIBS plasma as well as the absorption of the pre-pulse laser was measured. In the presence of particles in the focus of the pre-pulse laser, the plasma breakdown is affected and more energy of the pre-pulse laser is absorbed than without particles. As a result, the analyte line emission from the LIBS plasma of the second laser is enhanced. It is assumed that the enhancement is not only due to an increase of mass ablated by the second laser but also to better atomization and excitation conditions favored by a reduced gas density in the pre-pulse plasma. Higher laser pulse frequencies increase the probability of particle-laser interaction and, therefore, reduce the shot-to-shot line intensity variation as compared to lower particle loadings in the cell. Additional experiments using an aerosol chamber were performed to further quantify the laser absorption by the plasma in dependence on time both with and without the presence of particles. The overall implication of laser-particle interactions for LIBS and LA-ICP-MS/OES are discussed.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Oxford Editor
  Language Wos 000289328900012 Publication Date 2011-01-20
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0584-8547; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.241 Times cited 12 Open Access
  Notes Approved Most recent IF: 3.241; 2011 IF: 2.876
  Call Number (up) UA @ lucian @ c:irua:89008 Serial 1627
Permanent link to this record
 

 
Author Verberck, B.; Tarakina, N.V.
  Title Tubular fullerenes inside carbon nanotubes : optimal molecular orientation versus tube radius Type A1 Journal article
  Year 2011 Publication European physical journal : B : condensed matter and complex systems Abbreviated Journal Eur Phys J B
  Volume 80 Issue 3 Pages 355-362
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
  Abstract We present an investigation of the orientations and positions of tubular fullerene molecules (C90, ..., C200) encapsulated in single-walled carbon nanotubes (SWCNT), a series of so-called fullerene nanopeapods. We find that increasing the tube radius leads to the following succession of energetically stable regimes: (1) lying molecules positioned on the tube's long axis; (2) tilted molecules on the tube's long axis; and (3) lying molecules shifted away from the tube's long axis. As opposed to C70 and C80 molecules encapsulated in a SWCNT, standing orientations do not develop. Our results are relevant for the possible application of molecular-orientation-dependent electronic properties of fullerene nanopeapods, and also for the interpretation of future experiments on double-walled carbon nanotube formation by annealing fullerene peapod systems.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Berlin Editor
  Language Wos 000289576200010 Publication Date 2011-03-14
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1434-6028;1434-6036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.461 Times cited 10 Open Access
  Notes ; This work was financially supported by the Research Foundation – Flanders (FWO-VI). B.V. is a Postdoctoral Fellow of the Research Foundation – Flanders (FWO-VI). ; Approved Most recent IF: 1.461; 2011 IF: 1.534
  Call Number (up) UA @ lucian @ c:irua:89286 Serial 3738
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Author Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V.
  Title Impact of field-induced quantum confinement in tunneling field-effect devices Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
  Volume 98 Issue 14 Pages 143503,1-143503,3
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Being the working principle of a tunnel field-effect transistor, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons. The model reveals that the strong band bending near the gate dielectric, required to create short tunnel paths, results in quantization of the energy bands. Comparison with semiclassical models reveals a big shift in the onset of tunneling. The effective mass difference of the distinct valleys is found to reduce the subthreshold swing steepness.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000289297800074 Publication Date 2011-04-06
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 76 Open Access
  Notes ; The authors acknowledge Anne Verhulst for useful discussions. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by IMEC's Industrial Affiliation Program. ; Approved Most recent IF: 3.411; 2011 IF: 3.844
  Call Number (up) UA @ lucian @ c:irua:89297 Serial 1559
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Author Liu, C.-Y.; Berdiyorov, G.R.; Milošević, M.V.
  Title Vortex states in layered mesoscopic superconductors Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
  Volume 83 Issue 10 Pages 104524-104524,10
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Within the Ginzburg-Landau theory, we study the vortex structures in three-dimensional anisotropic mesoscopic superconductors in the presence of a uniform magnetic field. Anisotropy is included through varied Tc in different layers of the sample and leads to distinct differences in the vortex states and their free energy. Several unconventional states are found, some comprising vortex clusters or exhibiting asymmetry. In a tilted magnetic field, we found second-order transitions between different vortex states, although vortex entry is generally a first-order transition in mesoscopic samples. In multilayered samples the kinked vortex strings are formed owing to the competing interactions of vortices with Meissner currents and the weak-link boundaries. The length and deformation of vortex fragments are determined solely by the inclination and strength of applied magnetic field, and this lock-in does not depend on the degree of anisotropy between the superconducting layers.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000288998200003 Publication Date 2011-03-31
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.836 Times cited 22 Open Access
  Notes ; ; Approved Most recent IF: 3.836; 2011 IF: 3.691
  Call Number (up) UA @ lucian @ c:irua:89375 Serial 3888
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Author Li, B.; Peeters, F.M.
  Title Tunable optical Aharonov-Bohm effect in a semiconductor quantum ring Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
  Volume 83 Issue 11 Pages 115448-115448,13
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract By applying an electric field perpendicular to a semiconductor quantum ring we show that it is possible to modify the single particle wave function between quantum dot (QD)-like and ring-like. The constraints on the geometrical parameters of the quantum ring to realize such a transition are derived. With such a perpendicular electric field we are able to tune the Aharanov-Bohm (AB) effect for both the single particle and for excitons. The tunability is in both the strength of the AB effect as well as in its periodicity. We also investigate the strain induce potential inside the self-assembled quantum ring and the effect of the strain on the AB effect.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000288855200012 Publication Date 2011-03-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.836 Times cited 25 Open Access
  Notes ; This work was supported by the EU-NoE: SANDiE, the Flemish Science Foundation (FWO-Vl), the Interuniversity Attraction Poles, Belgium State, Belgium Science Policy, and IMEC, vzw collaborative project. We are grateful to Prof. M. Tadic and Dr. Fei Ding for stimulating discussions. ; Approved Most recent IF: 3.836; 2011 IF: 3.691
  Call Number (up) UA @ lucian @ c:irua:89376 Serial 3744
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Author Matulis, A.; Masir, M.R.; Peeters, F.M.
  Title Application of optical beams to electrons in graphene Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
  Volume 83 Issue 11 Pages 115458-115458,7
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract The technique of beam optics is applied to the description of the wave function of Dirac electrons. This approach is illustrated by considering electron transmission through simple nonhomogeneous structures, such as flat and bent p-n junctions and superlattices. We found that a convex p-n junction compresses the beam waist, while a concave interface widens it without loosing its focusing properties. At a flat p-n junction the waist of the transmitted Gaussian beam can be narrowed or widened, depending on the angle of incidence. A general condition is derived for the occurrence of beam collimation in a superlattice which is less stringent than previous discussed.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000288896400013 Publication Date 2011-03-29
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.836 Times cited 13 Open Access
  Notes ; This research was supported by the Flemish Science Foundation (Grant No. FWO-Vl), by the Belgian Science policy (IAP), and (in part) by the Lithuanian Science Council under project No. MIP-79/2010. ; Approved Most recent IF: 3.836; 2011 IF: 3.691
  Call Number (up) UA @ lucian @ c:irua:89377 Serial 142
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Author Zeng, Y.I.; Menghini, M.; Li, D.Y.; Lin, S.S.; Ye, Z.Z.; Hadermann, J.; Moorkens, T.; Seo, J.W.; Locquet, J.-P.; van Haesendonck, C.
  Title Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts Type A1 Journal article
  Year 2011 Publication Physical chemistry, chemical physics Abbreviated Journal Phys Chem Chem Phys
  Volume 13 Issue 15 Pages 6931-6935
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Cambridge Editor
  Language Wos 000288951000019 Publication Date 2011-03-14
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1463-9076;1463-9084; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 4.123 Times cited 7 Open Access
  Notes Approved Most recent IF: 4.123; 2011 IF: 3.573
  Call Number (up) UA @ lucian @ c:irua:89378 Serial 3807
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Author Hellmuth, K.H.; Siitari-Kaupi, M.; Rauhala, E.; Johansson, B.; Zilliacus, R.; Gijbels, R.; Adriaens, A.
  Title Reactions of high FeO-olivine rock with groundwater and redox-sensitive elements studied by surface-analytical methods and autoradiography Type P1 Proceeding
  Year 1994 Publication Materials Research Society symposium proceedings Abbreviated Journal
  Volume 333 Issue Pages 947-953
  Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Wuhan Editor
  Language Wos A1994BA13E00112 Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0272-9172 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited 6 Open Access
  Notes Approved
  Call Number (up) UA @ lucian @ c:irua:8939 Serial 2821
Permanent link to this record
 

 
Author Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W.
  Title Temperature-dependent modeling and characterization of through-silicon via capacitance Type A1 Journal article
  Year 2011 Publication IEEE electron device letters Abbreviated Journal Ieee Electr Device L
  Volume 32 Issue 4 Pages 563-565
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000288664800045 Publication Date 2011-03-04
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0741-3106;1558-0563; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.048 Times cited 27 Open Access
  Notes ; ; Approved Most recent IF: 3.048; 2011 IF: 2.849
  Call Number (up) UA @ lucian @ c:irua:89402 Serial 3498
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Author Adriaens, A.; van Nevel, L.; Van 't dack, L.; de Bièvre, P.; Adams, F.; Gijbels, R.
  Title The use of surface analysis techniques and isotope mass spectrometry for the study of water-rock interactions of interest in hot-dry rock technology Type P3 Proceeding
  Year 1995 Publication Abbreviated Journal
  Volume Issue Pages 2541-2544
  Keywords P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract
  Address
  Corporate Author Thesis
  Publisher Place of Publication Auckland Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN ISBN Additional Links UA library record
  Impact Factor Times cited Open Access
  Notes Approved no
  Call Number (up) UA @ lucian @ c:irua:8942 Serial 3824
Permanent link to this record
 

 
Author Sels, D.; Sorée, B.; Groeseneken, G.
  Title Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor Type A1 Journal article
  Year 2011 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
  Volume 10 Issue 1 Pages 216-221
  Keywords A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT)
  Abstract In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos 000300735800021 Publication Date 2011-02-22
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.526 Times cited 12 Open Access
  Notes ; ; Approved Most recent IF: 1.526; 2011 IF: 1.211
  Call Number (up) UA @ lucian @ c:irua:89501 Serial 2772
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Author Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S.
  Title Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy Type A1 Journal article
  Year 2011 Publication European physical journal : B : condensed matter and complex systems Abbreviated Journal Eur Phys J B
  Volume 79 Issue 4 Pages 423-428
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Strongly confined nano-systems, such as one-dimensional nanowires, feature deviations in their structural, electronic and optical properties from the corresponding bulk. In this work, we investigate the behavior of long-wavelength, optical phonons in vertical arrays of InAs nanowires by Raman spectroscopy. We attribute the main changes in the spectral features to thermal anharmonicity, due to temperature effects, and rule out the contribution of quantum confinement and Fano resonances. We also observe the appearance of surface optical modes, whose details allow for a quantitative, independent estimation of the nanowire diameter. The results shed light onto the mechanisms of lineshape change in low-dimensional InAs nanostructures, and are useful to help tailoring their electronic and vibrational properties for novel functionalities.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Berlin Editor
  Language Wos 000288120600005 Publication Date 2011-02-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1434-6028;1434-6036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.461 Times cited 10 Open Access
  Notes ; ; Approved Most recent IF: 1.461; 2011 IF: 1.534
  Call Number (up) UA @ lucian @ c:irua:89502 Serial 1841
Permanent link to this record
 

 
Author Magnus, W.; Brosens, F.; Sorée, B.
  Title Modeling drive currents and leakage currents : a dynamic approach Type A1 Journal article
  Year 2009 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
  Volume 8 Issue 3/4 Pages 307-323
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
  Abstract The dynamics of electrons and holes propagating through the nano-scaled channels of modern semiconductor devices can be seen as a widespread manifestation of non-equilibrium statistical physics and its ruling principles. In this respect both the devices that are pushing conventional CMOS technology towards the final frontiers of Moores law and the upcoming set of alternative, novel nanostructures grounded on entirely new concepts and working principles, provide an almost unlimited playground for assessing physical models and numerical techniques emerging from classical and quantum mechanical non-equilibrium theory. In this paper we revisit the Boltzmann as well as the WignerBoltzmann equation which offers a valuable platform to study transport of charge carriers taking part in drive currents. We focus on a numerical procedure that regained attention recently as an alternative tool to solve the time-dependent Boltzmann equation for inhomogeneous systems, such as the channel regions of field-effect transistors, and we discuss its extension to the WignerBoltzmann equation. Furthermore, we pay attention to the calculation of tunneling leakage currents. The latter typically occurs in nano-scaled transistors when part of the carrier distribution sustaining the drive current is found to tunnel into the gate due the presence of an ultra-thin insulating barrier separating the gate from the channel region. In particular, we discuss the paradox related to the very existence of leakage currents established by electrons occupying quasi-bound states, while the (real) wave functions of the latter cannot carry net currents. Finally, we describe a simple model to resolve the paradox as well as to estimate gate currents provided the local carrier generation rates largely exceed the tunneling rates.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos 000208236100009 Publication Date 2009-09-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.526 Times cited 4 Open Access
  Notes Approved Most recent IF: 1.526; 2009 IF: NA
  Call Number (up) UA @ lucian @ c:irua:89503 Serial 2110
Permanent link to this record
 

 
Author Sorée, B.; Magnus, W.; Pourtois, G.
  Title Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode Type A1 Journal article
  Year 2008 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
  Volume 7 Issue 3 Pages 380-383
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract We derive an analytical model for the electrostatics and the drive current in a silicon nanowire operating in JFET mode. We show that there exists a range of nanowire radii and doping densities for which the nanowire JFET satisfies reasonable device characteristics. For thin nanowires we have developed a self-consistent quantum mechanical model to obtain the electronic structure.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos 000208473800067 Publication Date 2008-02-20
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.526 Times cited 70 Open Access
  Notes Approved Most recent IF: 1.526; 2008 IF: NA
  Call Number (up) UA @ lucian @ c:irua:89504 Serial 107
Permanent link to this record
 

 
Author Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M.
  Title General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors Type A1 Journal article
  Year 2008 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
  Volume 7 Issue 4 Pages 475-484
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract Employing the quantum transmitting boundary (QTB) method, we have developed a two-dimensional Schrödinger-Poisson solver in order to investigate quantum transport in nano-scale CMOS transistors subjected to open boundary conditions. In this paper we briefly describe the building blocks of the solver that was originally written to model silicon devices. Next, we explain how to extend the code to semiconducting materials such as germanium, having conduction bands with energy ellipsoids that are neither parallel nor perpendicular to the channel interfaces or even to each other. The latter introduces mixed derivatives in the 2D effective mass equation, thereby heavily complicating the implementation of open boundary conditions. We present a generalized quantum transmitting boundary method that mainly leans on the completeness of the eigenstates of the effective mass equation. Finally, we propose a new algorithm to calculate the chemical potentials of the source and drain reservoirs, taking into account their mutual interaction at high drain voltages. As an illustration, we present the potential and carrier density profiles obtained for a (111) Ge NMOS transistor as well as the ballistic current characteristics.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos 000209032500002 Publication Date 2008-09-02
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.526 Times cited 3 Open Access
  Notes Approved Most recent IF: 1.526; 2008 IF: NA
  Call Number (up) UA @ lucian @ c:irua:89505 Serial 1322
Permanent link to this record
 

 
Author Sorée, B.; Magnus, W.
  Title Quantized conductance without reservoirs : method of the nonequilibrium statistical operator Type A1 Journal article
  Year 2007 Publication Journal of computational electronics Abbreviated Journal J Comput Electron
  Volume 6 Issue 1/3 Pages 255-258
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract We introduce a generalized non-equilibrium statistical operator (NSO) to study a current-carrying system. The NSO is used to derive a set of quantum kinetic equations based on quantum mechanical balance equations. The quantum kinetic equations are solved self-consistently together with Poissons equation to solve a general transport problem. We show that these kinetic equations can be used to rederive the Landauer formula for the conductance of a quantum point contact, without any reference to reservoirs at different chemical potentials. Instead, energy dissipation is taken into account explicitly through the electron-phonon interaction. We find that both elastic and inelastic scattering are necessary to obtain the Landauer conductance.
  Address
  Corporate Author Thesis
  Publisher Place of Publication S.l. Editor
  Language Wos 000208473600062 Publication Date 2007-01-17
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1569-8025;1572-8137; ISBN Additional Links UA library record; WoS full record
  Impact Factor 1.526 Times cited Open Access
  Notes Approved Most recent IF: 1.526; 2007 IF: NA
  Call Number (up) UA @ lucian @ c:irua:89506 Serial 2769
Permanent link to this record
 

 
Author Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G.
  Title Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor Type A1 Journal article
  Year 2010 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys
  Volume 107 Issue 2 Pages 024518,1-024518,8
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract Tunnel field-effect transistors (TFETs) are potential successors of metal-oxide-semiconductor FETs because scaling the supply voltage below 1 V is possible due to the absence of a subthreshold-swing limit of 60 mV/decade. The modeling of the TFET performance, however, is still preliminary. We have developed models allowing a direct comparison between the single-gate, double-gate, and gate-all-around configuration at high drain voltage, when the drain-voltage dependence is negligible, and we provide improved insight in the TFET physics. The dependence of the tunnel current on device parameters is analyzed, in particular, the scaling with gate-dielectric thickness, channel thickness, and dielectric constants of gate dielectric and channel material. We show that scaling the gate-dielectric thickness improves the TFET performance more than scaling the channel thickness and that improvements are often overestimated. There is qualitative agreement between our model and our experimental data.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000274180600122 Publication Date 2010-01-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.068 Times cited 150 Open Access
  Notes Approved Most recent IF: 2.068; 2010 IF: 2.079
  Call Number (up) UA @ lucian @ c:irua:89507 Serial 2146
Permanent link to this record
 

 
Author Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S.
  Title Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing Type A1 Journal article
  Year 2010 Publication Journal Of Physical Chemistry C Abbreviated Journal J Phys Chem C
  Volume 114 Issue 5 Pages 6894-6900
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Washington, D.C. Editor
  Language Wos 000276562500002 Publication Date 2010-03-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 4.536 Times cited 54 Open Access
  Notes Approved Most recent IF: 4.536; 2010 IF: 4.524
  Call Number (up) UA @ lucian @ c:irua:89508 Serial 3757
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Author O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V.
  Title Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections Type A1 Journal article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett
  Volume 96 Issue 21 Pages 213514,1-213514,3
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
  Abstract The capacitance-voltage (C-V) characteristic is calculated for p-type In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor (MOS) structures based on a self-consistent PoissonSchrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D<sub>it</sub>), is a contributing factor to the experimental observation of an almost symmetric C-V response for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.
  Address
  Corporate Author Thesis
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
  Language Wos 000278183200090 Publication Date 2010-05-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.411 Times cited 26 Open Access
  Notes Approved Most recent IF: 3.411; 2010 IF: 3.841
  Call Number (up) UA @ lucian @ c:irua:89509 Serial 2143
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Author Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M.
  Title Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET Type A2 Journal article
  Year 2010 Publication ECS transactions Abbreviated Journal
  Volume 28 Issue Pages 15-26
  Keywords A2 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract We explain the basic operation of a nanowire pinch-off FET and graphene nanoribbon tunnelFET. For the nanowire pinch-off FET we construct an analytical model to obtain the threshold voltage as a function of radius and doping density. We use the gradual channel approximation to calculate the current-voltage characteristics of this device and we show that the nanowire pinch-off FET has a subthreshold slope of 60 mV/dec and good ION and ION/IOFF ratios. For the graphene nanoribbon tunnelFET we show that an improved analytical model yields more realistic results for the transmission probability and hence the tunneling current. The first simulation results for the graphene nanoribbon tunnelFET show promising subthreshold slopes.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos Publication Date 0000-00-00
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1938-5862 ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor Times cited Open Access
  Notes Approved Most recent IF: NA
  Call Number (up) UA @ lucian @ c:irua:89510 Serial 2375
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Author Jehanathan, N.; Georgieva, V.; Saraiva, M.; Depla, D.; Bogaerts, A.; Van Tendeloo, G.
  Title The influence of Cr and Y on the micro structural evolution of Mg―Cr―O and Mg―Y―O thin films Type A1 Journal article
  Year 2011 Publication Thin solid films : an international journal on the science and technology of thin and thick films Abbreviated Journal Thin Solid Films
  Volume 519 Issue 16 Pages 5388-5396
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Electron microscopy for materials research (EMAT)
  Abstract The compositional influence of Cr and Y on the microstructure of Mg―Cr―O, and Mg―Y―O films synthesized by reactive magnetron sputtering has been investigated by transmission electron microscopy, X-ray diffraction and molecular dynamics simulations. A decrease in crystallinity is observed in these films as the M (Cr or Y) content is increased. It is found that M forms a solid solution with MgO for metal ratios up to ~ 70% and ~ 50% for Cr and Y respectively. Above ~ 70% Cr metal ratio the Mg―Cr―O films are found to be completely amorphous. The Mg―Y―O films are composed of Mg(Y)O and Y2O3 nano crystallites, up to ~ 50% Y metal ratio. Above this ratio, only Y2O3 nano crystallites are found. The preferential < 111> MgO grain alignment is strongly affected by the increase in M content. For M metal ratios up to ~ 50%, there is a selective promotion of the < 100> MgO grain alignments and a decline in the < 111> grain alignments.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Lausanne Editor
  Language Wos 000292573500013 Publication Date 2011-02-26
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0040-6090; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 1.879 Times cited 4 Open Access
  Notes Iwt Approved Most recent IF: 1.879; 2011 IF: 1.890
  Call Number (up) UA @ lucian @ c:irua:89516 Serial 1618
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Author Dixit, H.; Tandon, N.; Cottenier, S.; Saniz, R.; Lamoen, D.; Partoens, B.; van Speybroeck, V.; Waroquier, M.
  Title Electronic structure and band gap of zinc spinel oxides beyond LDA : ZnAl2O4, ZnGa2O4 and ZnIn2O4 Type A1 Journal article
  Year 2011 Publication New journal of physics Abbreviated Journal New J Phys
  Volume 13 Issue 6 Pages 063002-063002,11
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
  Abstract We examine the electronic structure of the family of ternary zinc spinel oxides ZnX2O4 (X=Al, Ga and In). The band gap of ZnAl2O4 calculated using density functional theory (DFT) is 4.25 eV and is overestimated compared with the experimental value of 3.83.9 eV. The DFT band gap of ZnGa2O4 is 2.82 eV and is underestimated compared with the experimental value of 4.45.0 eV. Since DFT typically underestimates the band gap in the oxide system, the experimental measurements for ZnAl2O4 probably require a correction. We use two first-principles techniques capable of describing accurately the excited states of semiconductors, namely the GW approximation and the modified BeckeJohnson (MBJ) potential approximation, to calculate the band gap of ZnX2O4. The GW and MBJ band gaps are in good agreement with each other. In the case of ZnAl2O4, the predicted band gap values are >6 eV, i.e. ~2 eV larger than the only reported experimental value. We expect future experimental work to confirm our results. Our calculations of the electron effective masses and the second band gap indicate that these compounds are very good candidates to act as transparent conducting host materials.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Bristol Editor
  Language Wos 000292137500002 Publication Date 2011-06-03
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1367-2630; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.786 Times cited 98 Open Access
  Notes Iwt; Fwo; Bof-Noi Approved Most recent IF: 3.786; 2011 IF: 4.177
  Call Number (up) UA @ lucian @ c:irua:89555 Serial 1008
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Author Shenderova, O.; Koscheev, A.; Zaripov, N.; Petrov, I.; Skryabin, Y.; Detkov, P.; Turner, S.; Van Tendeloo, G.
  Title Surface chemistry and properties of ozone-purified detonation nanodiamonds Type A1 Journal article
  Year 2011 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
  Volume 115 Issue 20 Pages 9827-9837
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Nanodiamond from ozone purification (NDO) demonstrates very distinctive properties within the class of detonation nanodiamonds, namely very high acidity and high colloidal stability in a broad pH range. To understand the origin of these unusual properties of NDO, the nature of the surface functional groups formed during detonation soot oxidation by ozone needs to be revealed. In this work, thermal desorption mass spectrometry (TDMS) and IR spectroscopy were used for the identification of surface groups and it was concluded that carboxylic anhydride groups prevail on the NDO surface. On the basis of the temperature profiles of the desorbed volatile products and their mass balance, it is hypothesized that decomposition of carboxylic anhydride groups from NDO during heating proceeds by two different mechanisms. Other distinctive features of NDO in comparison with air-treated nanodiamond are also reported.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Washington, D.C. Editor
  Language Wos 000290652200001 Publication Date 2011-04-28
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 4.536 Times cited 105 Open Access
  Notes Esteem 026019; Fwo Approved Most recent IF: 4.536; 2011 IF: 4.805
  Call Number (up) UA @ lucian @ c:irua:89556 Serial 3394
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Author Boschker, H.; Huijben, M.; Vailinois, A.; Verbeeck, J.; Van Aert, S.; Luysberg, M.; Bals, S.; Van Tendeloo, G.; Houwman, E.P.; Koster, G.; Blank, D.H.A.; Rijnders, G.
  Title Optimized fabrication of high-quality La0.67Sr0.33MnO3 thin films considering all essential characteristics Type A1 Journal article
  Year 2011 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys
  Volume 44 Issue 20 Pages 205001-205001,9
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract In this paper, an overview of the fabrication and properties of high-quality La0.67Sr0.33MnO3 (LSMO) thin films is given. A high-quality LSMO film combines a smooth surface morphology with a large magnetization and a small residual resistivity, while avoiding precipitates and surface segregation. In the literature, typically only a few of these issues are adressed. We therefore present a thorough characterization of our films, which were grown by pulsed laser deposition. The films were characterized with reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, magnetization and transport measurements, x-ray photoelectron spectroscopy and scanning transmission electron microscopy. The films have a saturation magnetization of 4.0 µB/Mn, a Curie temperature of 350 K and a residual resistivity of 60 µΩ cm. These results indicate that high-quality films, combining both large magnetization and small residual resistivity, were realized. A comparison between different samples presented in the literature shows that focussing on a single property is insufficient for the optimization of the deposition process. For high-quality films, all properties have to be adressed. For LSMO devices, the thin-film quality is crucial for the device performance. Therefore, this research is important for the application of LSMO in devices.
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000290150900001 Publication Date 2011-04-29
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.588 Times cited 99 Open Access
  Notes This research was financially supported by the Dutch Science Foundation, by NanoNed, a nanotechnology program of the Dutch Ministry of Economic Affairs, and by the NanOxide program of the European Science Foundation. This work is supported in part by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515. Approved Most recent IF: 2.588; 2011 IF: 2.544
  Call Number (up) UA @ lucian @ c:irua:89557UA @ admin @ c:irua:89557 Serial 2491
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Author Georgieva, V.; Voter, A.F.; Bogaerts, A.
  Title Understanding the surface diffusion processes during magnetron sputter-deposition of complex oxide Mg-Al-O thin films Type A1 Journal article
  Year 2011 Publication Crystal growth & design Abbreviated Journal Cryst Growth Des
  Volume 11 Issue 6 Pages 2553-2558
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
  Abstract It is known that film structure may change dramatically with the extent of surface diffusion during the film growth process. In the present work, surface diffusion, induced thermally or activated by energetic impacts, is investigated theoretically under conditions appropriate for magnetron sputter-deposition of MgAlO thin films with varying stoichiometry. The distribution of surface diffusion energy barriers available to the system was determined for each stoichiometry, which allowed assessing in a qualitative way how much surface diffusion will take place on the time scale available between deposition events. The activation energy barriers increase with the Al concentration in the film, and therefore, the surface diffusion rates in the time frame of typical deposition rates drop, which can explain the decrease in crystallinity in the film structure and the transition to amorphous structure. The deposition process and the immediate surface diffusion enhanced by the energetic adatoms are simulated by means of a molecular dynamics model. The longer-time thermal surface diffusion and the energy landscape are studied by the temperature accelerated dynamics method, applied in an approximate way. The surface diffusion enhanced by the energetic impacts appears to be very important for the film structure in the low-temperature deposition regime.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000291074600068 Publication Date 2011-04-11
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1528-7483;1528-7505; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 4.055 Times cited 14 Open Access
  Notes Approved Most recent IF: 4.055; 2011 IF: 4.720
  Call Number (up) UA @ lucian @ c:irua:89566 Serial 3806
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Author Krüger, P.; da Pieve, F.; Osterwalder, J.
  Title Real-space multiple scattering method for angle-resolved photoemission and valence-band photoelectron diffraction and its application to Cu(111) Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
  Volume 83 Issue 11 Pages 115437,1-115437,8
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract A computational method is presented for angle-resolved photoemission spectra (ARPES) and photoelectron diffraction (PED) in the ultraviolet regime. The one-step model is employed and both initial valence and final continuum states are calculated using the finite-cluster, real-space multiple scattering method. Thereby the approach is versatile and provides a natural link to core-level PED. The method is applied to the Cu(111) valence band and good agreement with experiment is found for both ARPES spectra and PED patterns. When the PED patterns are integrated over a filled band of a single-orbital symmetry, such as Cu-3d, we show, both numerically and analytically, that the exact theory with delocalized initial states can be replaced by the much simpler, core-level-type theory where the initial states are taken as localized.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000288594500005 Publication Date 2011-03-22
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.836 Times cited 17 Open Access
  Notes Approved Most recent IF: 3.836; 2011 IF: 3.691
  Call Number (up) UA @ lucian @ c:irua:89599 Serial 2831
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Author Michel, K.H.; Verberck, B.
  Title Phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride Type A1 Journal article
  Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
  Volume 83 Issue 11 Pages 115328-115328,14
  Keywords A1 Journal article; Condensed Matter Theory (CMT)
  Abstract A unified theory of phonon dispersions and piezoelectricity in bulk and multilayers of hexagonal boron nitride (h-BN) is derived. The dynamical matrix is calculated on the basis of an empirical force constant model of intralayer valence and interlayer van der Waals interactions. Coulomb interactions are calculated by Ewalds method, adapted for the three-dimensional (3D) and the multilayer case. The deformation of the ionic charge distribution with long-wave lattice displacements is taken into account. Special attention is devoted to the nonanalytic long-range Coulomb contribution to the dynamical matrix which is different for the 3D crystal and the multilayer case. Consequently there is a splitting of the transverse optical (TO) and longitudinal optical (LO) phonon branches of E1u symmetry and a discontinuity of the A2u branch at the Γ point in 3D h-BN. No such splitting and discontinuity at Γ are present in multilayer crystals with a finite number N of layers. There a diverging bundle of N overbending optical phonon branches emerges from Γ. Borns long-wave theory is applied and extended for the study of piezoelectricity in layered crystals. While 3D h-BN and h-BN multilayers with an even number of layers (symmetry D6h) are not piezoelectric, multilayers with an uneven number of Nu layers (symmetry D3h) are piezoelectric; the piezoelectric coefficient e1,11 is inversely proportional to Nu.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Editor
  Language Wos 000288783700005 Publication Date 2011-03-24
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 3.836 Times cited 82 Open Access
  Notes ; Discussions with G. Heger, B. Partoens, and F. M. Peeters are gratefully acknowledged. This work has been supported by the Flemish Science Foundation (FWO-V1) and the Bijzonder Onderzoeksfonds, Universiteit Antwerpen (BOF-UA). ; Approved Most recent IF: 3.836; 2011 IF: 3.691
  Call Number (up) UA @ lucian @ c:irua:89602 Serial 2603
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Author Sullivan, E.; Hadermann, J.; Greaves, C.
  Title Crystallographic and magnetic characterisation of the brownmillerite Sr2Co2O5 Type A1 Journal article
  Year 2011 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
  Volume 184 Issue 3 Pages 649-654
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract Sr2Co2O5 with the perovskite-related brownmillerite structure has been synthesised via quenching, with the orthorhombic unit cell parameters a=5.4639(3) Å, b=15.6486(8) Å and c=5.5667(3) Å based on refinement of neutron powder diffraction data collected at 4 K. Electron microscopy revealed LRLR-intralayer ordering of chain orientations, which require a doubling of the unit cell along the c-parameter, consistent with the assignment of the space group Pcmb. However, on the length scale pertinent to NPD, no long-range order is observed and the disordered space group Imma appears more appropriate. The magnetic structure corresponds to G-type order with a moment of 3.00(4) μB directed along [1 0 0].
  Address
  Corporate Author Thesis
  Publisher Place of Publication London Editor
  Language Wos 000288587800026 Publication Date 2011-01-27
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.299 Times cited 19 Open Access
  Notes Approved Most recent IF: 2.299; 2011 IF: 2.159
  Call Number (up) UA @ lucian @ c:irua:89650 Serial 584
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Author van den Broek, W.; Van Aert, S.; Goos, P.; van Dyck, D.
  Title Throughput maximization of particle radius measurements by balancing size and current of the electron probe Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
  Volume 111 Issue 7 Pages 940-947
  Keywords A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT); Vision lab
  Abstract In thispaperweinvestigatewhichprobesizemaximizesthethroughputwhenmeasuringtheradiusof nanoparticlesinhighangleannulardarkfieldscanningtransmissionelectronmicroscopy(HAADFSTEM). The sizeandthecorrespondingcurrentoftheelectronprobedeterminetheprecisionoftheestimateofa particlesradius.Maximizingthroughputmeansthatamaximumnumberofparticlesshouldbeimaged withinagiventimeframe,sothataprespecifiedprecisionisattained.WeshowthatBayesianstatistical experimentaldesignisaveryusefulapproachtodeterminetheoptimalprobesizeusingacertainamount of priorknowledgeaboutthesample.Thedependenceoftheoptimalprobesizeonthedetectorgeometry and thediameter,variabilityandatomicnumberoftheparticlesisinvestigated.Anexpressionforthe optimalprobesizeintheabsenceofanykindofpriorknowledgeaboutthespecimenisderivedaswell.
  Address
  Corporate Author Thesis
  Publisher Place of Publication Amsterdam Editor
  Language Wos 000300461000026 Publication Date 2010-11-25
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
  Impact Factor 2.843 Times cited 7 Open Access
  Notes Approved Most recent IF: 2.843; 2011 IF: 2.471
  Call Number (up) UA @ lucian @ c:irua:89657 Serial 3659
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