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  Author Title Year Publication Volume Times cited Additional Links Links (up)
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2018 ECS journal of solid state science and technology 7 2 UA library record; WoS full record; WoS citing articles doi
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2017 Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar 1 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; A new method to calculate leakage current and its applications for sub-45nm MOSFETs 2005 Solid-State Device Research (ESSDERC), European Conference T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France UA library record; WoS full record doi
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference 2008 Physical review : B : condensed matter and materials physics 77 8 UA library record; WoS full record; WoS citing articles doi
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits 2020 Superconductor Science & Technology 33 4 UA library record; WoS full record; WoS citing articles pdf doi
Vanherck, J.; Sorée, B.; Magnus, W. Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields 2018 Journal of physics : condensed matter 30 UA library record; WoS full record; WoS citing articles pdf doi
Moors, K.; Sorée, B.; Magnus, W. Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires 2016 Journal of physics : condensed matter 28 2 UA library record; WoS full record; WoS citing articles pdf doi
Slachmuylders, A.F.; Partoens, B.; Magnus, W.; Peeters, F.M. Exciton states in cylindrical nanowires 2006 Journal of physics : condensed matter 18 27 UA library record; WoS full record; WoS citing articles doi
Kerner, C.; Hackens, B.; Golubović, D.S.; Poli, S.; Faniel, S.; Magnus, W.; Schoenmaker, W.; Bayot, V.; Maes, H. Control and readout of current-induced magnetic flux quantization in a superconducting transformer 2009 Superconductor science and technology 22 2 UA library record; WoS full record; WoS citing articles doi
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. 2D ferromagnetism at finite temperatures under quantum scrutiny 2020 Applied Physics Letters 117 8 UA library record; WoS full record; WoS citing articles pdf doi
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. Voltage-controlled superconducting magnetic memory 2019 AIP advances T2 – 64th Annual Conference on Magnetism and Magnetic Materials (MMM), NOV 04-08, 2019, Las Vegas, NV 9 UA library record; WoS full record doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions 2018 Journal of applied physics 124 1 UA library record; WoS full record; WoS citing articles pdf doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. Phonon-assisted tunneling in direct-bandgap semiconductors 2019 Journal of applied physics 125 2 UA library record; WoS full record; WoS citing articles pdf doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor 2013 Journal of applied physics 113 4 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
Pokatilov, E.P.; Fomin, V.M.; Balaban, S.N.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Collaert, N.; van Rossum, M.; de Meyer, K. Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures 1999 Journal Of Applied Physics 85 16 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach 2011 Journal of applied physics 109 41 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus 2010 Journal of applied physics 108 7 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers 2009 Journal of applied physics 106 29 UA library record; WoS full record; WoS citing articles doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology 2009 Journal of applied physics 106 3 UA library record; WoS full record; WoS citing articles doi
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. A method to calculate tunneling leakage currents in silicon inversion layers 2006 Journal of applied physics 100 1 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor 2004 Journal of applied physics 96 14 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor 2003 Journal of applied physics 93 16 UA library record; WoS full record; WoS citing articles doi
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