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Author Robin, I.-C.; Aichele, T.; Bougerol, C.; André, R.; Tatarenko, S.; Bellet-Amalric, E.; van Daele, B.; Van Tendeloo, G. pdf  doi
openurl 
  Title CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions Type A1 Journal article
  Year (down) 2007 Publication Nanotechnology Abbreviated Journal Nanotechnology  
  Volume 18 Issue 26 Pages 265701,1-11  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000247103500012 Publication Date 2007-06-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.44 Times cited 8 Open Access  
  Notes Approved Most recent IF: 3.44; 2007 IF: 3.310  
  Call Number UA @ lucian @ c:irua:64756 Serial 303  
Permanent link to this record
 
 
Author Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. doi  openurl
  Title Single crystalline GaN grown on porous Si(111) by MOVPE Type P1 Proceeding
  Year (down) 2007 Publication Physica status solidi: C: conferences and critical reviews Abbreviated Journal  
  Volume 4 Issue 6 Pages 1908-1912  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000247421800020 Publication Date 2007-05-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1610-1634;1610-1642; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94664 Serial 3019  
Permanent link to this record
 
 
Author Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. doi  openurl
  Title Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers Type A1 Journal article
  Year (down) 2006 Publication Journal of electronic materials Abbreviated Journal J Electron Mater  
  Volume 35 Issue 4 Pages 592-598  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Boston, Mass. Editor  
  Language Wos 000237101800016 Publication Date 2007-04-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0361-5235;1543-186X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.579 Times cited 102 Open Access  
  Notes Approved Most recent IF: 1.579; 2006 IF: 1.504  
  Call Number UA @ lucian @ c:irua:58238 Serial 1223  
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Author Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; pdf  doi
openurl 
  Title Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors Type A1 Journal article
  Year (down) 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 89 Issue 20 Pages Artn 201908  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000242100200030 Publication Date 2006-11-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 15 Open Access  
  Notes Iap V-1; Fwo Approved Most recent IF: 3.411; 2006 IF: 3.977  
  Call Number UA @ lucian @ c:irua:61919 Serial 1978  
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Author Kee-Hyun, K.; van Daele, B.; Van Tendeloo, G.; Jong-Kyu, Y. openurl 
  Title Observations of intermetallic compound formation of hot dip aluminized steel Type A1 Journal article
  Year (down) 2006 Publication Aluminium alloys: part 1-2 Abbreviated Journal  
  Volume 519-521 Issue 1-2 Pages 1871-1875  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A hot dip aluminizing process to simulate the continuous galvanizing line (CGL) was carried out in three successive steps by a hot dip simulator: the pre-treatment for removing scales on the 200 x 250 mm(2) and 1mm in thickness cold rolled steel sheet, the dipping in 660 degrees C Al-Si melt for 3s and the cooling. In a pre-treatment, the steel specimen was partly coated by Au to confirm the mechanism of intermetallic compound (IMC) formation. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), and transmission electron microscopy (TEM) analyses were followed to observe the cross-section and the distribution of the elements. The specimen was analyzed in the boundary of the dipped-undipped part to see the formation mechanism of the aluminized steel. An intermetallic compound (IMC) is rapidly developed and grown in the steel-liquid interface. It has been usually reported that the IMC was formed by the dissolution of iron in the steel substrate toward the melt and the diffusion of aluminum in an opposite direction. The specimen is covered with aluminum-10 wt.% silicon, forms the IMC in the part that was not Au coated. However, IMC is not formed in the Au-coated part. The interface of the dipped-undipped is also analyzed by EDX. At the interface of the steel-IMC, it is clearly shown that the IMC is only formed in the dipped part and exists in the steel substrate as well, and contributes by iron, aluminum and silicon. The result clearly shows that only aluminum diffuses into the steel substrate without the dissolution of iron and forms the IMC between the steel substrate and the melt. Au coating and the short dipping time prevent the iron from dissolving into the aluminum melt. By TEM combined with focused ion beam (FIB) sample preparation, the IMC is confirmed as Fe2SiAl8, a hexagonal structure with space group P6(3)/mmc.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:104062 Serial 2425  
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Author van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. pdf  doi
openurl 
  Title The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN Type A1 Journal article
  Year (down) 2005 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 87 Issue 6 Pages 061905,1-3  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000231016900019 Publication Date 2005-08-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 57 Open Access  
  Notes Approved Most recent IF: 3.411; 2005 IF: 4.127  
  Call Number UA @ lucian @ c:irua:54808 Serial 2910  
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Author van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. openurl 
  Title Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN Type A1 Journal article
  Year (down) 2005 Publication Springer proceedings in physics Abbreviated Journal  
  Volume 107 Issue Pages 389-392  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0930-8989 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:94775 Serial 3707  
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Author van Daele, B.; Van Tendeloo, G.; Jacobs, K.; Moerman, I.; Leys, M. pdf  doi
openurl 
  Title Formation of metallic In in InGaN/GaN multiquantum wells Type A1 Journal article
  Year (down) 2004 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 85 Issue 19 Pages 4379-4381  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000224962800038 Publication Date 2004-11-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 32 Open Access  
  Notes IAP V-1; IWT-Project No.980319 Approved Most recent IF: 3.411; 2004 IF: 4.308  
  Call Number UA @ lucian @ c:irua:54804 Serial 1261  
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Author Wu, M.F.; Zhou, S.; Yao, S.; Zhao, Q.; Vantomme, A.; van Daele, B.; Piscopiello, E.; Van Tendeloo, G.; Tong, Y.Z.; Yang, Z.J.; Yu, T.J.; Zhang, G.Y. pdf  doi
openurl 
  Title High precision determination of the elastic strain of InGaN/GaN multiple quantum wells Type A1 Journal article
  Year (down) 2004 Publication Journal of vacuum science and technology: B: microelectronics and nanometer structures Abbreviated Journal  
  Volume 22 Issue 3 Pages 920-924  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000222481400010 Publication Date 2004-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-211X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 15 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54863 Serial 1437  
Permanent link to this record
 
 
Author Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. openurl 
  Title High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers Type P1 Proceeding
  Year (down) 2004 Publication Materials Research Society symposium proceedings Abbreviated Journal  
  Volume 798 Issue Pages Y10.22,1-6  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wuhan Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0272-9172 ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54861 Serial 1424  
Permanent link to this record
 
 
Author Janssen, G.; Goovaerts, E.; Bouwen, A.; Partoens, B.; van Daele, B.; Zurauskiene, N.; Koenraad, P.M.; Wolter, J.H. doi  openurl
  Title Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots Type A1 Journal article
  Year (down) 2003 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 68 Issue Pages 045329,1-6  
  Keywords A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000185239600080 Publication Date 2003-08-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 10 Open Access  
  Notes FWO G.0110.96 and G.0409.02; IAP-V Approved Most recent IF: 3.836; 2003 IF: NA  
  Call Number UA @ lucian @ c:irua:43316 Serial 2416  
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Author Jacobs, K.; van Daele, B.; Leys, M.; Moerman, I.; Van Tendeloo, G. doi  openurl
  Title Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Type A1 Journal article
  Year (down) 2003 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 248 Issue Pages 498-502  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000180446900091 Publication Date 2002-12-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 14 Open Access  
  Notes was dubbel; dubbel eruit gehaald Approved Most recent IF: 1.751; 2003 IF: 1.414  
  Call Number UA @ lucian @ c:irua:54785 Serial 810  
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Author van Daele, B.; Van Tendeloo, G.; Germain, M.; Leys, M.; Bougrioua, Z.; Moerman, I. doi  openurl
  Title Relation between microstructure and 2DEG properties of AlGaN/GaN structures Type A1 Journal article
  Year (down) 2002 Publication Physica status solidi: B: basic research Abbreviated Journal Phys Status Solidi B  
  Volume 234 Issue 3 Pages 830-834  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000180038200031 Publication Date 2002-12-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.674; 2002 IF: 0.930  
  Call Number UA @ lucian @ c:irua:54847 Serial 2857  
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