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Author |
Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. |
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Title |
Single crystalline GaN grown on porous Si(111) by MOVPE |
Type |
P1 Proceeding |
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Year  |
2007 |
Publication |
Physica status solidi: C: conferences and critical reviews |
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Volume |
4 |
Issue |
6 |
Pages |
1908-1912 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim. |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Wos |
000247421800020 |
Publication Date |
2007-05-27 |
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Series Editor |
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Series Volume |
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Edition |
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ISSN |
1610-1634;1610-1642; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
2 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:94664 |
Serial |
3019 |
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