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Record |
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Author |
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
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Title |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
Type |
P1 Proceeding |
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Year  |
2004 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
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Volume |
798 |
Issue |
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Pages |
Y10.22,1-6 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Wuhan |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0272-9172 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:54861 |
Serial |
1424 |
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| Permanent link to this record |
