| |
Record |
Links |
|
Author |
Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
|
| |
Title |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
Type |
A1 Journal article |
| |
Year  |
2006 |
Publication |
Journal of electronic materials |
Abbreviated Journal |
J Electron Mater |
|
| |
Volume |
35 |
Issue |
4 |
Pages |
592-598 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Boston, Mass. |
Editor |
|
|
| |
Language |
|
Wos |
000237101800016 |
Publication Date |
2007-04-16 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0361-5235;1543-186X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
1.579 |
Times cited |
102 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 1.579; 2006 IF: 1.504 |
|
| |
Call Number |
UA @ lucian @ c:irua:58238 |
Serial |
1223 |
|
| Permanent link to this record |
