| |
Records |
Links |
|
Author |
Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. |
|
| |
Title |
Single crystalline GaN grown on porous Si(111) by MOVPE |
Type |
P1 Proceeding |
| |
Year  |
2007 |
Publication |
Physica status solidi: C: conferences and critical reviews |
Abbreviated Journal |
|
|
| |
Volume |
4 |
Issue |
6 |
Pages |
1908-1912 |
|
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
| |
Language |
|
Wos |
000247421800020 |
Publication Date |
2007-05-27 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1610-1634;1610-1642; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
|
Times cited |
2 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94664 |
Serial |
3019 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
|
| |
Title |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
Type |
A1 Journal article |
| |
Year |
2006 |
Publication |
Journal of electronic materials |
Abbreviated Journal |
J Electron Mater |
|
| |
Volume |
35 |
Issue |
4 |
Pages |
592-598 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Boston, Mass. |
Editor |
|
|
| |
Language |
|
Wos |
000237101800016 |
Publication Date |
2007-04-16 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0361-5235;1543-186X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
1.579 |
Times cited |
102 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 1.579; 2006 IF: 1.504 |
|
| |
Call Number |
UA @ lucian @ c:irua:58238 |
Serial |
1223 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; |
|
| |
Title |
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors |
Type |
A1 Journal article |
| |
Year |
2006 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
| |
Volume |
89 |
Issue |
20 |
Pages |
Artn 201908 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
| |
Language |
|
Wos |
000242100200030 |
Publication Date |
2006-11-16 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
3.411 |
Times cited |
15 |
Open Access |
|
|
| |
Notes |
Iap V-1; Fwo |
Approved |
Most recent IF: 3.411; 2006 IF: 3.977 |
|
| |
Call Number |
UA @ lucian @ c:irua:61919 |
Serial |
1978 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. |
|
| |
Title |
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN |
Type |
A1 Journal article |
| |
Year |
2005 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
| |
Volume |
87 |
Issue |
6 |
Pages |
061905,1-3 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
| |
Language |
|
Wos |
000231016900019 |
Publication Date |
2005-08-02 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
3.411 |
Times cited |
57 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 3.411; 2005 IF: 4.127 |
|
| |
Call Number |
UA @ lucian @ c:irua:54808 |
Serial |
2910 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
|
| |
Title |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
Type |
A1 Journal article |
| |
Year |
2005 |
Publication |
Springer proceedings in physics |
Abbreviated Journal |
|
|
| |
Volume |
107 |
Issue |
|
Pages |
389-392 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0930-8989 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:94775 |
Serial |
3707 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
|
| |
Title |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
Type |
P1 Proceeding |
| |
Year |
2004 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
|
|
| |
Volume |
798 |
Issue |
|
Pages |
Y10.22,1-6 |
|
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Wuhan |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0272-9172 |
ISBN |
|
Additional Links |
UA library record |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:54861 |
Serial |
1424 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
van Daele, B.; Van Tendeloo, G.; Germain, M.; Leys, M.; Bougrioua, Z.; Moerman, I. |
|
| |
Title |
Relation between microstructure and 2DEG properties of AlGaN/GaN structures |
Type |
A1 Journal article |
| |
Year |
2002 |
Publication |
Physica status solidi: B: basic research |
Abbreviated Journal |
Phys Status Solidi B |
|
| |
Volume |
234 |
Issue |
3 |
Pages |
830-834 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
| |
Language |
|
Wos |
000180038200031 |
Publication Date |
2002-12-03 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0370-1972;1521-3951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
1.674 |
Times cited |
1 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 1.674; 2002 IF: 0.930 |
|
| |
Call Number |
UA @ lucian @ c:irua:54847 |
Serial |
2857 |
|
| Permanent link to this record |
