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Author |
Title |
Year |
Publication  |
Volume |
Times cited |
Additional Links |
Links |
|
|
Georgieva, V.; Bogaerts, A.; Gijbels, R. |
Numerical study of Ar/CF4/N2 discharges in single and dual frequency capacitively coupled plasma reactors |
2003 |
Journal of applied physics |
94 |
90 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Cenian, A.; Chernukho, A.; Bogaerts, A.; Gijbels, R.; Leys, C. |
Particle-in-cell Monte Carlo modeling of Langmuir probes in an Ar plasma |
2005 |
Journal of applied physics |
97 |
18 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Georgieva, V.; Bogaerts, A.; Gijbels, R. |
Particle-in-cell/Monte Carlo simulation of a capacitively coupled radio frequency Ar/Cf4 discharge: effect of gas composition |
2003 |
Journal of applied physics |
93 |
57 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Neyts, E.; Yan, M.; Bogaerts, A.; Gijbels, R. |
Particle-in-cell/Monte Carlo simulations of a low-pressure capacitively coupled radio-frequency discharge: effect of adding H2 to an Ar discharge |
2003 |
Journal of applied physics |
93 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Wen, D.-Q.; Zhang, Q.-Z.; Jiang, W.; Song, U.-H.; Bogaerts, A.; Wang, Y.-N. |
Phase modulation in pulsed dual-frequency capacitively coupled plasmas |
2014 |
Journal of applied physics |
115 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Chen, Z.; Bogaerts, A. |
Response to “Comment on 'Laser ablation of Cu and plume expansion into 1 atm ambient gas'” [J. Appl. Phys. 115, 166101 (2014)] |
2014 |
Journal of applied physics |
115 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bogaerts, A.; Gijbels, R. |
The role of fast argon ions and atoms in the ionization of argon in a direct current glow discharge: a mathematical simulation |
1995 |
Journal of applied physics |
78 |
60 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Autrique, D.; Clair, G.; L'Hermite, D.; Alexiades, V.; Bogaerts, A.; Rethfeld, B. |
The role of mass removal mechanisms in the onset of ns-laser induced plasma formation |
2013 |
Journal of applied physics |
114 |
31 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bogaerts, A.; Gijbels, R. |
Role of sputtered Cu atoms and ions in a direct current glow discharge: combined fluid and Monte Carlo model |
1996 |
Journal of applied physics |
79 |
81 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bogaerts, A.; Gijbels, R. |
Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description |
1999 |
Journal of applied physics |
86 |
50 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Baguer, N.; Bogaerts, A.; Gijbels, R. |
Role of the fast Ar atoms, Ar+ ions and metastable Ar atoms in a hollow cathode glow discharge: study by a hybrid model |
2003 |
Journal of applied physics |
94 |
19 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Depla, D.; Li, X.Y.; Mahieu, S.; van Aeken, K.; Leroy, W.P.; Haemers, J.; de Gryse, R.; Bogaerts, A. |
Rotating cylindrical magnetron sputtering: simulation of the reactive process |
2010 |
Journal of applied physics |
107 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Rethfeld, B.; Bogaerts, A. |
Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions |
2012 |
Journal of applied physics |
111 |
30 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Yan, M.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J. |
Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4 |
2000 |
Journal of applied physics |
87 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Baguer, N.; Bogaerts, A.; Gijbels, R. |
Study of a hollow cathode glow discharge in He: Monte Carlo-fluid model combined with a transport model for the metastable atoms |
2003 |
Journal of applied physics |
93 |
24 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Baguer, N.; Bogaerts, A.; Donko, Z.; Gijbels, R.; Sadeghi, N. |
Study of the Ar metastable atom population in a hollow cathode discharge by means of a hybrid model and spectrometric measurements |
2005 |
Journal of applied physics |
97 |
40 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Baguer, N.; Bogaerts, A. |
Study of the sputtered Cu atoms and Cu+ ions in a hollow cathode glow discharge using a hybrid model |
2005 |
Journal of applied physics |
98 |
18 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M. |
Unraveling the deposition mechanism in a-C:H thin-film growth: a molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces |
2006 |
Journal of applied physics |
99 |
25 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. |
Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires |
2015 |
Journal of applied physics |
118 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. |
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device |
2016 |
Journal of applied physics |
119 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
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Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. |
Thickness dependence of the resistivity of platinum-group metal thin films |
2017 |
Journal of applied physics |
122 |
42 |
UA library record; WoS full record; WoS citing articles |
|
|
|
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO |
2018 |
Journal of applied physics |
123 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Gu, J.-G.; Zhang, Y.; Gao, M.-X.; Wang, H.-Y.; Zhang, Q.-Z.; Yi, L.; Jiang, W. |
Enhancement of surface discharge in catalyst pores in dielectric barrier discharges |
2019 |
Journal of applied physics |
125 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. |
Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation |
2019 |
Journal of applied physics |
125 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
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Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. |
A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx |
2020 |
Journal Of Applied Physics |
127 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Liang, Y.-S.; Liu, Y.-X.; Zhang, Y.-R.; Wang, Y.-N. |
Investigation of voltage effect on reaction mechanisms in capacitively coupled N-2 discharges |
2020 |
Journal Of Applied Physics |
127 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Vanraes, P.; Bogaerts, A. |
The essential role of the plasma sheath in plasma–liquid interaction and its applications—A perspective |
2021 |
Journal Of Applied Physics |
129 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Bruggeman, P.J.; Bogaerts, A.; Pouvesle, J.M.; Robert, E.; Szili, E.J. |
Plasma–liquid interactions |
2021 |
Journal Of Applied Physics |
130 |
|
UA library record |
|
|
|
Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. |
On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study |
2017 |
Journal of applied physics |
121 |
|
UA library record; WoS full record; WoS citing articles |
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