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Author Recham, N.; Casas-Cabanas, M.; Cabana, J.; Grey, C.P.; Jumas, J.-C.; Dupont, L.; Armand, M.; Tarascon, J.-M. pdf  doi
openurl 
  Title Formation of a complete solid solution between the triphylite and fayalite olivine structures Type A1 Journal article
  Year 2008 Publication Chemistry of materials Abbreviated Journal Chem Mater  
  Volume 20 Issue 21 Pages 6798-6809  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The recent infatuation for LiFePO4 as positive electrode material in Li-ion batteries has prompted a renewed interest in olivine-type structures, with a view to enhance their conduction proper-ties. We show that the dual substitution of Li for Fe and of P for Si in the olivine LiFePO4 phase leads to a complete solid solution Li1-xFe1+xP1-xSixO4 as deduced from combined X-ray diffraction, Mossbauer, and NMR experiments. Our findings challenge the common belief that the anionic network cannot be substituted. Moreover. it is found that such a substitution promotes Li intersite mixing between the olivine M1 and M2 sites. Such mixing, together with the worsening of the conducting properties of the dually substituted samples, is believed to be responsible for the poor electrochemical performances of the member's series. Beyond x = 0.20, the samples were electrochemically inactive. While the current materials are disappointing application-wise, such a study provides clues to the rich chemistry remaining to be unveiled with olivine-type structures in particular and polyanionic compounds in general.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000260658100036 Publication Date 2008-10-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.466 Times cited 35 Open Access  
  Notes Approved Most recent IF: 9.466; 2008 IF: 5.046  
  Call Number (up) UA @ lucian @ c:irua:103082 Serial 1255  
Permanent link to this record
 
 
Author Llobet, E.; Espinosa, E.H.; Sotter, E.; Ionescu, R.; Vilanova, X.; Torres, J.; Felten, A.; Pireaux, J.J.; Ke, X.; Van Tendeloo, G.; Renaux, F.; Paint, Y.; Hecq, M.; Bittencourt, C.; pdf  doi
openurl 
  Title Carbon nanotube TiO2 hybrid films for detecting traces of O2 Type A1 Journal article
  Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology  
  Volume 19 Issue 37 Pages 375501-375511  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Hybrid titania films have been prepared using an adapted sol-gel method for obtaining well-dispersed hydrogen plasma-treated multiwall carbon nanotubes in either pure titania or Nb-doped titania. The drop-coating method has been used to fabricate resistive oxygen sensors based on titania or on titania and carbon nanotube hybrids. Morphology and composition studies have revealed that the dispersion of low amounts of carbon nanotubes within the titania matrix does not significantly alter its crystallization behaviour. The gas sensitivity studies performed on the different samples have shown that the hybrid layers based on titania and carbon nanotubes possess an unprecedented responsiveness towards oxygen (i.e. more than four times higher than that shown by optimized Nb-doped TiO(2) films). Furthermore, hybrid sensors containing carbon nanotubes respond at significantly lower operating temperatures than their non-hybrid counterparts. These new hybrid sensors show a strong potential for monitoring traces of oxygen (i.e. <= 10 ppm) in a flow of CO(2), which is of interest for the beverage industry.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000258385600014 Publication Date 2008-08-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.44 Times cited 48 Open Access  
  Notes Pai Approved Most recent IF: 3.44; 2008 IF: 3.446  
  Call Number (up) UA @ lucian @ c:irua:103083 Serial 282  
Permanent link to this record
 
 
Author Lin, K.; Pescarmona, P.P.; Vandepitte, H.; Liang, D.; Van Tendeloo, G.; Jacobs, P.A. doi  openurl
  Title Synthesis and catalytic activity of Ti-MCM-41 nanoparticles with highly active titanium sites Type A1 Journal article
  Year 2008 Publication Journal of catalysis Abbreviated Journal J Catal  
  Volume 254 Issue 1 Pages 64-70  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Ti-MCM-41 nanoparticles 80-160 nm in diameter (Ti-MCM-41 NP) were successfully prepared by a dilute solution route in sodium hydroxide medium at ambient temperature. Ti-MCM-41 NP were characterized by X-ray diffraction, nitrogen adsorption/desorption isotherms, SEM, TEM. FT-IR, and UV-vis spectroscopy. The characterization results showed the existence of highly ordered hexagonal mesoporous structure and tetrahedral Ti species in Ti-MCM-41 NP. In the epoxidation of cyclohexene with aqueous H2O2, Ti-MCM-41 NP displayed higher conversion and initial reaction rate than a Ti-MCM-41 sample with normal particle size (Ti-MCM-41 LP). Diffusion of the reactants was accelerated and the accessibility to the catalytic Ti species was enhanced in the shorter channels in Ti-MCM-41 NP samples. Ti-MCM-41 NP showed much higher selectivity for cyclohexene oxide compared with Ti-MCM-41 LP, suggesting reduced hydrolysis of cyclohexene oxide with water in the former case. The increased selectivity for cyclohexene oxide can be attributed to the lower concentration of residual surface silanols in Ti-MCM-41 NP and the shorter residence time of epoxide in the shorter mesoporous channels. Ti-MCM-41 NP also appears to be a suitable catalyst in the epoxidation of a bulky substrate, like cholesterol, with tert-butyl hydroperoxide. (c) 2007 Elsevier Inc. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication San Diego, Calif. Editor  
  Language Wos 000253646100006 Publication Date 2008-01-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-9517; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 6.844 Times cited 52 Open Access  
  Notes Approved Most recent IF: 6.844; 2008 IF: 5.167  
  Call Number (up) UA @ lucian @ c:irua:103092 Serial 3409  
Permanent link to this record
 
 
Author Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; doi  openurl
  Title Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics Type A1 Journal article
  Year 2005 Publication Journal of the American Ceramic Society Abbreviated Journal J Am Ceram Soc  
  Volume 88 Issue 7 Pages 1929-1934  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The phase and microstructure relationship of 12 mol% CeO2-stabilized ZrO2 ceramics prepared from coated powder was investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersed Xray spectroscopy (EDS). As compared with the sample prepared with co-precipitated method, which exhibited a similar grain size distribution, the EDS analysis revealed that the powder coating induced a wide distribution of CeO2 solubility, which decreases monotonically with the increase of grain size. This variation of stabilizer content from grain to grain rendered many large grains in the monoclinic phase. Stronger cerium segregation to grain boundaries was observed between large grains, which often form thin amorphous films there. The inhomogeneous; CeO2 distribution keeps more tetragonal ZrO2 grains close to the phase boundary to facilitate the transforming toughness. Addition of an Al2O3 precursor in coated powders effectively raises the overall CeO2 stabilizer content in the grains and preserves more transformable tetragonal phase in the microstructure, which further enhanced the fracture toughness. The dependence of CeO2 solubility on grain size may be explained in a simple coating-controlled diffusion and growth process that deserves further investigation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Columbus, Ohio Editor  
  Language Wos 000230128100040 Publication Date 2005-06-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0002-7820;1551-2916; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.841 Times cited 11 Open Access  
  Notes Approved Most recent IF: 2.841; 2005 IF: 1.586  
  Call Number (up) UA @ lucian @ c:irua:103156 Serial 830  
Permanent link to this record
 
 
Author Mahieu, S.; Ghekiere, P.; de Winter, G.; de Gryse, R.; Depla, D.; Lebedev, O.I. openurl 
  Title Biaxially aligned yttria stabilized zirconia and titanium nitride layers deposited by unbalanced magnetron sputtering Type A1 Journal article
  Year 2005 Publication Diffusion and defect data : solid state data : part B : solid state phenomena T2 – 2nd International Conference on Texture and Anisotropy of Polycrystals, JUL 07-09, 2004, Metz, FRANCE Abbreviated Journal  
  Volume 105 Issue Pages 447-452  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-of-plane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vaduz Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 3-908451-09-4 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103190 Serial 230  
Permanent link to this record
 
 
Author Kirschhock, C.E.A.; Liang, D.; Aerts, A.; Aerts, C.A.; Kremer, S.P.B.; Jacobs, P.A.; Van Tendeloo, G.; Martens, J.A. doi  openurl
  Title On the TEM and AFM evidence of zeosil nanoslabs present during the synthesis of silicalite-1 : reply Type L1 Letter to the editor
  Year 2004 Publication Angewandte Chemie: international edition in English Abbreviated Journal Angew Chem Int Edit  
  Volume 43 Issue 35 Pages 4562-4564  
  Keywords L1 Letter to the editor; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language Wos 000224008400003 Publication Date 2004-08-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1433-7851;1521-3773; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 11.994 Times cited Open Access  
  Notes Fwo; Iap-Pai Approved Most recent IF: 11.994; 2004 IF: 9.161  
  Call Number (up) UA @ lucian @ c:irua:103253 Serial 2457  
Permanent link to this record
 
 
Author Laffez, P.; Lebedev, O.I.; Ruello, P.; Desfeux, R.; Banerjee, G.; Capon, F. doi  openurl
  Title Evidence of strain induced structural change in hetero-epitaxial NdNiO3 thin films with metal-insulator transition Type A1 Journal article
  Year 2004 Publication European physical journal: applied physics Abbreviated Journal Eur Phys J-Appl Phys  
  Volume 25 Issue 1 Pages 25-31  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Neodymium nickelate thin films have been prepared on NdGaO3 substrates by RF magnetron sputtering and post-annealing treatment under oxygen pressure. Transport properties are found to depend strongly on film thickness. Thick films show transport properties close to bulk ceramics, while very thin films exhibit a large transition from metal to insulator which occurs over a wide temperature range with high resistivity. Structure and surface morphology of the films have been investigated by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). Thin films (approximate to17 nm) grow heteroepitaxially, while thicker films (approximate to73 nm) show a granular structure. The thinnest sample suggests a symmetry change induced by the epitaxial strain of the substrate. This paper discusses the relationship between microstructure and transport properties.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000187286000003 Publication Date 2003-12-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1286-0042;1286-0050; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.684 Times cited 12 Open Access  
  Notes Approved Most recent IF: 0.684; 2004 IF: 0.745  
  Call Number (up) UA @ lucian @ c:irua:103256 Serial 1096  
Permanent link to this record
 
 
Author Linssen, T.; Cassiers, K.; Cool, P.; Lebedev, O.; Whittaker, A.; Vansant, E.F. doi  openurl
  Title Physicochemical and structural characterization of mesoporous aluminosilicates synthesized from leached saponite with additional aluminum incorporation Type A1 Journal article
  Year 2003 Publication Chemistry of materials Abbreviated Journal Chem Mater  
  Volume 15 Issue 25 Pages 4863-4873  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)  
  Abstract A thorough investigation was performed on the physical (mechanical, thermal, and hydrothermal stability) and chemical (ion exchange capacity and silanol number) characteristics of aluminosilicate FSMs, synthesized via a new successful short-time synthesis route using leached saponite and a low concentration of CTAB. Moreover, the influence of an additional Al incorporation, utilizing different aluminum sources, on the structure of the FSM derived from saponite is studied. A mesoporous aluminosilicate with a low Si/Al ratio of 12.8 is synthesized, and still has a very large surface area of 1130 m(2)/g and pore volume of 0.92 cm(3)/g. The aluminum-containing samples all have a high cation exchange capacity of around 1 mmol/9 while they still have a silanol number of about 0.9 OH/nm(2); both characteristics being interesting for high-yield postsynthesis modification reactions. Finally, a study is performed on the transformation of the aluminosilicates into their Bronsted acid form via the exchange with ammonium ions and a consecutive heat treatment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000187250800026 Publication Date 2003-12-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.466 Times cited 11 Open Access  
  Notes Approved Most recent IF: 9.466; 2003 IF: 4.374  
  Call Number (up) UA @ lucian @ c:irua:103265 Serial 2618  
Permanent link to this record
 
 
Author Ball, J.M.; Schryvers, D. doi  openurl
  Title The analysis of macrotwins in NiAl martensite Type A1 Journal article
  Year 2003 Publication Journal de physique: 4 T2 – 10th International Conference on Martensitic Transformations, JUN 10-14, 2002, ESPOO, FINLAND Abbreviated Journal J Phys Iv  
  Volume 112 Issue Part 1 Pages 159-162  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We present a theoretical study of macrotwins arising in cubic to tetragonal martensitic transformations. The results help to explain some features of such macrotwins observed in Ni65Al35.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos 000186503200024 Publication Date 2008-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 11 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103275 Serial 3569  
Permanent link to this record
 
 
Author Lazoryak, B.I.; Baryshnikova, O.V.; Stefanovich, S.Y.; Malakho, A.P.; Morozov, V.A.; Belik, A.A.; Leonidov, I.A.; Leonidova, O.N.; Van Tendeloo, G. pdf  doi
openurl 
  Title Ferroelectric and ionic-conductive properties of nonlinear-optical vanadate, Ca9Bi(VO4)7 Type A1 Journal article
  Year 2003 Publication Chemistry of materials Abbreviated Journal Chem Mater  
  Volume 15 Issue 15 Pages 3003-3010  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Structural, chemical, and physical properties of whitlockite-type Ca9Bi(VO4)(7) were studied by X-ray powder diffraction (XRD), electron diffraction (ED), second-harmonic generation (SHG), thermogravimetry, differential scanning calorimetry, dielectric, and electrical-conductivity measurements. A new phase-transition of the ferroelectric type was found in Ca9Bi(VO4)(7) with a transition temperature, T-c of 1053 +/- 3 K. The polar phase, beta-Ca9Bi(VO4)(7), is stable below T-c down to at least 160 K. The centrosymmetric beta'-phase is stable above T-c up to 1273 +/- 5 K. Above 1273 K, it decomposes to give BiVO4 and whitlockite-type solid solutions of Ca9+1.5xBi1-x(VO4)(7). The beta<---->beta' phase transition is reversible and of second order. Electrical conductivity of beta'-Ca9Bi(VO4)(7) is rather high (sigma = 0.6 x 10(-3) S/cm at 1200 K) and obeys the Arrhenius law with an activation energy of 1.0 eV. Structure parameters of Ca9Bi(VO4)(7) are refined by the Rietveld method from XRD data measured at room temperature (space group R3c; Z = 6; a = 10.8992(1) Angstrom, c = 38.1192(4) Angstrom, and V = 3921.6(1) Angstrom(3); R-wp = 3.06% and R-p = 2.36%). Bi3+ ions together with Ca2+ ions are statistically distributed among the M1, M2, M3, and M5 sites. Ca9Bi(VO4)(7) has a SHG efficiency of about 140 times that of quartz. Through the powder SHG measurements, we estimated the nonlinear optical susceptibility, Digital, at about 6.1-7.2 pm/V. This value for Ca9Bi(VO4)(7) is comparable with that for known nonlinear optical materials such as LiNbO3 and LiTaO3.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000184379900024 Publication Date 2003-07-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.466 Times cited 51 Open Access  
  Notes Iup V-1; Dwtc Approved Most recent IF: 9.466; 2003 IF: 4.374  
  Call Number (up) UA @ lucian @ c:irua:103284 Serial 1179  
Permanent link to this record
 
 
Author Bals, S.; Van Tendeloo, G.; Rijnders, G.; Huijben, M.; Leca, V.; Blank, D.H.A. doi  openurl
  Title Transmission electron microscopy on interface engineered superconducting thin films Type A1 Journal article
  Year 2003 Publication IEEE transactions on applied superconductivity Abbreviated Journal Ieee T Appl Supercon  
  Volume 13 Issue 2:3 Pages 2834-2837  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2Ox buffer layer can avoid a variable interface configuration in YBa2Cu3O7-delta thin films grown on SrTiO3. The growth can also be controlled at an atomic level by, using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0.85La0.15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000184242400101 Publication Date 2003-07-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 13 Open Access  
  Notes Iuap V-1; Fwo Approved Most recent IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103292 Serial 3712  
Permanent link to this record
 
 
Author Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. doi  openurl
  Title A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions Type A1 Journal article
  Year 2003 Publication The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical Abbreviated Journal J Phys Chem B  
  Volume 107 Issue 16 Pages 3690-3696  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)  
  Abstract An alternative pathway to assemble mesoporous molecular sieve silicas is developed using nonionic alkylamines and N,N-dimethylalkylamines (SO) as structure-directing agents in acidic conditions. The synthesized mesostructures possess wormhole-like frameworks with pore sizes and pore volumes in the range of 20-90 Angstrom and 0.5-1.3 cm(3)/g, respectively. The formation of the mesophase is controlled by a counterion-mediated mechanism of the type (S(0)H(+))(X(-)I(+)), where S(0)H(+) are protonated water molecules that are hydrogen bonded to the lone electron pairs on the amine surfactant headgroups (S(0)H(+)), X(-) is the counteranion originating from the acid, and I(+) are the positively charged (protonated) silicate species. We found that the stronger the ion X(-) is bonded to S(0)H(+), the more it catalyzes the silica condensation into (S(0)H(+))(X(-)I(+)). Br(-) is shown to be a strong binding anion and therefore a fast silica polymerization promoter compared to Cl(-) resulting in the formation of a higher quality mesophase for the Br(-) syntheses. We also showed that the polymerization rate of the silica, dictated by the counterion, controls the morphology of the mesostructures from nonuniform agglomerated blocks in the case of Br(-) syntheses to spherical particles for the Cl(-) syntheses. Next to many benefits such as low temperature, short synthesis time, and the use of inexpensive, nontoxic, and easily extractable amine templates, the developed materials have a remarkable higher thermal and hydrothermal stability compared to hexagonal mesoporous silica, which is also prepared with nonionic amines but formed through the S(0)I(0) mechanism.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000182350200005 Publication Date 2003-04-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1520-6106;1520-5207; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.177 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.177; 2003 IF: 3.679  
  Call Number (up) UA @ lucian @ c:irua:103300 Serial 24  
Permanent link to this record
 
 
Author Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. pdf  url
doi  openurl
  Title Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon Type A1 Journal article
  Year 2002 Publication Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY Abbreviated Journal J Phys-Condens Mat  
  Volume 14 Issue 48 Pages 13185-13193  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000180091100068 Publication Date 2002-11-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.649 Times cited 3 Open Access  
  Notes Approved Most recent IF: 2.649; 2002 IF: 1.775  
  Call Number (up) UA @ lucian @ c:irua:103326 Serial 2477  
Permanent link to this record
 
 
Author Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. pdf  url
doi  openurl
  Title Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions Type A1 Journal article
  Year 2002 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat  
  Volume 14 Issue 44 Pages 10983-10988  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000179541700114 Publication Date 2002-10-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.649 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.649; 2002 IF: 1.775  
  Call Number (up) UA @ lucian @ c:irua:103328 Serial 2061  
Permanent link to this record
 
 
Author Antipov, E.V.; Khasanova, N.R.; Pshirkov, J.S.; Putilin, S.N.; Bougerol, C.; Lebedev, O.I.; Van Tendeloo, G.; Baranov, A.N.; Park, Y.W. pdf  doi
openurl 
  Title The superconducting bismuth-based mixed oxides Type A1 Journal article
  Year 2002 Publication Current applied physics T2 – QTSM and QFS 02 Symposium, MAY 08-10, 2002, SEOUL, SOUTH KOREA Abbreviated Journal Curr Appl Phys  
  Volume 2 Issue 5 Pages 425-430  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The present paper describes the synthesis, characterization of mixed-valence bismuthates with three- or two-dimensional perovskite-like structures and structural criteria that influence superconductivity in these compounds. Single-phase samples of Sr1-xKxBiO3 were prepared for the broad range of K-content: 0.25 less than or equal to x less than or equal to 0.65. For these bismuthates the symmetry of the structure changes from monoclinic to orthorhombic and finally to tetragonal upon increasing the K-content thus resulting in the decrease of the Bi-O distances and reduction of the network distortions. Superconductivity with maximum T-c = 12 K exists in the narrow range (x approximate to 0.5-0.6) within the stability field of the tetragonal phase (0.33 less than or equal to x less than or equal to 0.65), when the three-dimensional octahedral framework has close to the ideal perovskite structure arrangement. The layered type (Ba,K)(3)Bi2O7 and (Ba,K)(2)BiO4 bismuthates belonging to the A(n+1)B(n)O(3n+1) homologous series were investigated. Buckling of the (BiO2) layers in the structure of the n = 2 member occurs due to the ordering of alkaline- and alkaline-earth cations between two independent positions. The formation of the one-layer bismuthate was revealed by Electron Microscopy and XRPD studies. Both types of compounds are considered to be possible candidates for new superconducting materials among bismuthates. (C) 2002 Published by Elsevier Science B.V.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000179330900015 Publication Date 2002-11-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1567-1739; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.971 Times cited 2 Open Access  
  Notes Approved Most recent IF: 1.971; 2002 IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103336 Serial 3598  
Permanent link to this record
 
 
Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J. doi  openurl
  Title Microstructural investigation of BaTiO3 thin films deposited on (001) MgO Type A1 Journal article
  Year 2002 Publication Journal of materials research Abbreviated Journal J Mater Res  
  Volume 17 Issue 8 Pages 1923-1931  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The microstructure of BaTiO3 thin films, epitaxially deposited on (001) MgO by pulsed laser ablation, has been investigated by transmission electron microscopy. The films are always c-axis-orientated, but dislocations, {111} stacking faults, and antiphase boundaries are frequently observed. Conventional TEM and high-resolution microscopy allow one to deduce the Burgers vectors of dislocations as b(1) = <100> or b(2) = <110>, both being perfect dislocations. Most extrinsic stacking faults are ending at 1/3<112> or 1/3<111> partial dislocations; the displacement vector of the antiphase boundaries is 1/2<101>. Studying the interfacial structure by means of zone images taken along [100] and [110] shows that the misfit is mainly released by dislocations with Burgers vectors of 1/2<110> and 1/2<101>.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000177208800010 Publication Date 2008-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.673 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.673; 2002 IF: 1.530  
  Call Number (up) UA @ lucian @ c:irua:103343 Serial 2044  
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Author Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. pdf  doi
openurl 
  Title Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques Type A1 Journal article
  Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 91 Issue 4 Pages 2493-2498  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000173553800114 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 27 Open Access  
  Notes Approved Most recent IF: 2.068; 2002 IF: 2.281  
  Call Number (up) UA @ lucian @ c:irua:103372 Serial 2542  
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Author de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. pdf  doi
openurl 
  Title Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM Type A1 Journal article
  Year 2001 Publication Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY Abbreviated Journal Physica B  
  Volume 308 Issue Pages 294-297  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000173660100073 Publication Date 2002-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.386; 2001 IF: 0.663  
  Call Number (up) UA @ lucian @ c:irua:103389 Serial 345  
Permanent link to this record
 
 
Author Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. pdf  doi
openurl 
  Title Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures Type A1 Journal article
  Year 2001 Publication Journal of the electrochemical society Abbreviated Journal J Electrochem Soc  
  Volume 148 Issue 11 Pages G597-G601  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000171653100038 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0013-4651; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.259 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.259; 2001 IF: 2.033  
  Call Number (up) UA @ lucian @ c:irua:103394 Serial 1725  
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Author Mishra, R.S.K.; Pandey, D.; Lemmens, H.; Van Tendeloo, G. url  doi
openurl 
  Title Evidence for another low-temperature phase transition in tetragonal Pb(ZrxTi1-x)O3 (x=0.515,0.520) Type A1 Journal article
  Year 2001 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 64 Issue 5 Pages 054104  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Results of dielectric and resonance frequency (f(r)) measurements below room temperature are presented for Pb(ZrxTi1-x)O-3, x = 0.515 and 0.520. It is shown that the temperature coefficient of f(r) changes sign from negative to positive around 210 and 265 K for x = 0.520 and 200 and 260 K for x = 0.515. Anomalies in the real part of the dielectric constant (epsilon') are observed around the same temperatures at which the temperature coefficient of f(r) changes sign because of the electrostrictive coupling between the elastic and dielectric responses. Low-temperature powder x-ray-diffraction (XRD) data, however, reveal only one transition from the tetragonal to monoclinic phase similar to that reported by Noheda et al. [Phys. Rev. B, 61, 8687 (2000)]. Electron-diffraction data, on the other hand, reveal yet another structural transition at lower temperatures corresponding to the second anomaly in the epsilon' vs T and f(r) vs T curves. This second transition is shown to be a cell-doubling transition not observed by Noheda et al. in their XRD studies. The observation of superlattice reflections raises doubts about the correctness of the Cm space group proposed by Noheda et al. for the monoclinic phase of Pb(ZrxTi(1-x))O-3 below the second transition temperature.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000170267000028 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited Open Access  
  Notes Approved Most recent IF: 3.836; 2001 IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103407 Serial 1093  
Permanent link to this record
 
 
Author Koster, G.; Verbist, K.; Rijnders, G.; Rogalla, H.; Van Tendeloo, G.; Blank, D.H.A. pdf  doi
openurl 
  Title Structure and properties of (Sr,Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition Type A1 Journal article
  Year 2001 Publication Physica: C : superconductivity Abbreviated Journal Physica C  
  Volume 353 Issue 3-4 Pages 167-183  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report on the preparation of CuBa(2)(Sr(x)Ca(1-x))(n)Cu(n-1)O(y) compounds by fabrication of (Ba,Sr,Ca)CuO(2) superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the applicability of PLD to atomic engineering as well as the fabrication of artificial superconductors is demonstrated. The (Sr,Ca)CuO(2)-BaCuO(2) superlattices are characterized by X-ray diffraction, high-resolution electron microscopy (HREM) and selected area electron diffraction. The superlattice period has been deduced from electron diffraction patterns and XRD measurements. For Sr containing films, the best growth behavior is observed and films with the highest degree of crystallinity are obtained, whereas superconductivity is only found in less crystalline, Ca containing films. Under some deposition conditions and depending on the amount of Ba containing layers in the superlattice, it was observed that the BaCuO(2) material is converted to Ba(2)CuO(4-delta). Image simulations to interpret the HREM contrast are performed. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000168861100003 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.404; 2001 IF: 0.806  
  Call Number (up) UA @ lucian @ c:irua:103417 Serial 3293  
Permanent link to this record
 
 
Author Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. pdf  doi
openurl 
  Title The influence of the h-BN morphology and structure on the c-BN growth Type A1 Journal article
  Year 2001 Publication Diamond and related materials T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL Abbreviated Journal Diam Relat Mater  
  Volume 10 Issue 3-7 Pages 1352-1356  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000168730600206 Publication Date 2002-10-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 17 Open Access  
  Notes Approved Most recent IF: 2.561; 2001 IF: 1.902  
  Call Number (up) UA @ lucian @ c:irua:103421 Serial 3586  
Permanent link to this record
 
 
Author Van Tendeloo, G.; Garlea, O.; Darie, C.; Bougerol-Chaillout, C.; Bordet, P. pdf  doi
openurl 
  Title The fine structure of YCuO2+x delafossite determined by synchrotron powder diffraction and electron microscopy Type A1 Journal article
  Year 2001 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 156 Issue 2 Pages 428-436  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract YCuO2 delafossite crystallizes into two stacking variants; hexagonal 2H or rhombohedral 3R, depending on the preparation conditions. The structure of the fully oxygenated material YCuO2.50 has been determined as orthorhombic (a(O) = 6.1961 Angstrom; b(O) = 11.2158 Angstrom; c(O) = 7.1505 Angstrom; space group Pnma). The structure is based on the hexagonal 2H structure (a(O) = a(H)root3; b(O) = c(H); c(O) = 2a(H)). Upon incomplete oxidation, a different YCuOZ phase with ideal composition YCuO2.33 and lattice parameters a(H root)3, a(H)root3, c(H) is also formed. Diffraction patterns are often very complex because of the presence of planar defects and intergrowth of both phases. Under electron beam irradiation, oxygen is released from the structure and one phase gradually transforms into the other. (C) 2001 Academic Press.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000167252000025 Publication Date 2002-09-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.299 Times cited 33 Open Access  
  Notes Approved Most recent IF: 2.299; 2001 IF: 1.614  
  Call Number (up) UA @ lucian @ c:irua:103425 Serial 3581  
Permanent link to this record
 
 
Author Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. openurl 
  Title EFTEM study of plasma etched low-k Si-O-C dielectrics Type A1 Journal article
  Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND Abbreviated Journal  
  Volume Issue 169 Pages 415-418  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0818-4; 0951-3248 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103432 Serial 877  
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. pdf  doi
openurl 
  Title Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer Type A1 Journal article
  Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 77 Issue 4 Pages 507-509  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000088225400016 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 44 Open Access  
  Notes Approved Most recent IF: 3.411; 2000 IF: 3.906  
  Call Number (up) UA @ lucian @ c:irua:103448 Serial 712  
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Author Hervieu, M.; Martin, C.; Maignan, A.; Van Tendeloo, G.; Jirak, Z.; Hejtmanek, J.; Barnabe, A.; Thopart, D.; Raveau, B. doi  openurl
  Title Structural and magnetotransport transitions in the electron-doped Pr1-xSrxMnO3(0.85\leq x\leq1) manganites Type A1 Journal article
  Year 2000 Publication Chemistry and materials Abbreviated Journal Chem Mater  
  Volume 12 Issue 5 Pages 1456-1462  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The exploration of the Mn4+-rich side of the Pr1-xSrxMnO3 system has allowed the extension of the domain of the cubic perovskite, by using a two-step process, combining synthesis under Ar flow at high temperature and O-2 pressure annealing at lower temperature. We show that these Pr-doped cubic perovskites exhibit a coupled structural (cubic-tetragonal) and magnetic (para-antiferro) transition connected with a resistivity jump at the same temperature. The strong interplay between lattice, charges, and spins for these oxides results from the appearance at low temperature of the distorted C-type antiferromagnetic structure. The Pr1-xSrxMnO3 magnetic phase diagram shows, for 0.9 less than or equal to x less than or equal to 1 (i.e., on the Mn4+-rich side), the existence at low temperature of C- and G-type antiferromagnetism. The absence of ferromagnetic-antiferromagnetic competition explains that magnetoresistante properties are not observed in this system, in contrast to Mn4+-rich Ln(1-x)Ca(x)MnO(3) systems.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000087136800039 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.466 Times cited 24 Open Access  
  Notes Approved Most recent IF: 9.466; 2000 IF: 3.580  
  Call Number (up) UA @ lucian @ c:irua:103454 Serial 3198  
Permanent link to this record
 
 
Author Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. url  doi
openurl 
  Title In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures Type A1 Journal article
  Year 2000 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 61 Issue 15 Pages 10336-10345  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000086606200082 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 27 Open Access  
  Notes Conference Name: Microsc. Semicond. Mater. Conf. Approved Most recent IF: 3.836; 2000 IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103456 Serial 1577  
Permanent link to this record
 
 
Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. pdf  openurl
  Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
  Year 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R  
  Volume 5 Issue s:[1] Pages art. no.-W11.38  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Materials research society Place of Publication Warrendale Editor  
  Language Wos 000090103600097 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number (up) UA @ lucian @ c:irua:103471 Serial 423  
Permanent link to this record
 
 
Author Ahonen, P.P.; Kauppinen, E.I.; Joubert, J.C.; Deschanvres, J.L.; Van Tendeloo, G. doi  openurl
  Title Preparation of nanocrystalline titania powder via aerosol pyrolysis of titanium tetrabutoxide Type A1 Journal article
  Year 1999 Publication Journal of materials research Abbreviated Journal J Mater Res  
  Volume 14 Issue 10 Pages 3938-3948  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Nanocrystalline titanium dioxide was prepared via aerosol pyrolysis of titanium alkoxide precursor at 200-580 degrees C in air and in nitrogen atmospheres. Powders were characterized by x-ray diffraction, thermogravimetric analysis, Brunauer-Emmett-Teller analysis, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, x-ray fluorescence, Raman and infrared spectroscopy, and Berner-type low-pressure impactor. The anatase phase transition was initiated at 500 degrees C in nitrogen and at 580 degrees C in air. Under other conditions amorphous powders were observed and transformed to nanocrystalline TiO2 via thermal postannealing. In air, smooth and spherical particles with 2-4-mu m diameter were formed with an as-expected tendency to convert to rutile in the thermal postannealings. In nitrogen, a fraction of the titanium tetrabutoxide precursor evaporated and formed ultrafine particles via the gas-to-particle conversion. At 500 degrees C thermally stable anatase phase was formed in nitrogen. A specific surface area as high as 280 m(2) g(-1) was observed for an as-prepared powder.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000083163700019 Publication Date 2008-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.673 Times cited 38 Open Access  
  Notes Approved Most recent IF: 1.673; 1999 IF: 1.574  
  Call Number (up) UA @ lucian @ c:irua:103485 Serial 2705  
Permanent link to this record
 
 
Author de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. doi  openurl
  Title Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon Type A1 Journal article
  Year 1999 Publication The review of scientific instruments Abbreviated Journal Rev Sci Instrum  
  Volume 70 Issue 9 Pages 3661-3663  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000082289200026 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0034-6748; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.515 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.515; 1999 IF: 1.293  
  Call Number (up) UA @ lucian @ c:irua:103487 Serial 48  
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