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Author de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. doi  openurl
  Title Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon Type A1 Journal article
  Year (down) 1999 Publication The review of scientific instruments Abbreviated Journal Rev Sci Instrum  
  Volume 70 Issue 9 Pages 3661-3663  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000082289200026 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0034-6748; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.515 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.515; 1999 IF: 1.293  
  Call Number UA @ lucian @ c:irua:103487 Serial 48  
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