Abstract: Welding nanocrystals for assembly: The welding of Au domains grown on the tips of shape-controlled cadmium chalcogenide colloidal nanocrystals is used as a strategy for their assembly. Iodine-induced coagulation of selectively grown Au domains leads to assemblies such as flowerlike structures based on bullet-shaped nanocrystals, linear and cross-linked chains of nanorods, and globular networks with tetrapods as building blocks.

Abstract: ITEM specimens of a LaAlO3/SrTiO3 multilayer are prepared by FIB with internal lift out. Using a Ga+1 beam of 5 kV, a final cleaning step yielding top, top-angle, side, and bottom-angle cleaning is performed. Different cleaning procedures, which can be easily implemented in a dual beam FIB system, are described and compared; all cleaning types produce thin lamellae, useful for HRTEM and HAADF-STEM work up to atomic resolution. However, the top cleaned lamellae are strongly affected by the curtain effect. Top-angle cleaned specimens show an amorphous layer of around 5 nm at the specimen surfaces, due to damage and redeposition. Furthermore, it is observed that the LaAlO3 layers are preferentially destroyed and transformed into amorphous material, during the thinning process.

Abstract: Both an organically modified commercial clay of montmorillonite type (MMT) and its nanocomposites, based either on polyamide 6 (PA6) or an epoxy resin, as matrix polymer, have been characterized by transmission electron microscopy (TEM). Sample micrographs, taken at increasing exposure times (t(e)), have shown the gradual disappearance of clay layers, because of an amorphisation of the MMT crystalline structures caused by prolonged sample exposure to electron beam. Indeed, the above phenomenon, which is mostly evident in the case of intercalated nanocomposites, makes the detection of the layered silicate dispersion in the polymer matrix rather difficult and compels to perform TEM measurements using very short exposure times. Moreover, the microscopy accelerating voltage has turned out to affect sample stability; namely, when decreasing the above parameter, the disappearance of clay structure occurs at lower exposure times. (C) 2006 Elsevier B.V. All rights reserved.

Abstract: Annular dark-field transmission electron microscopy uses an annular objective aperture that blocks the central beam and all electrons scattered up to a certain serniangle. A contrast suitable for electron tomography is generated and 3D reconstructions of CdTe tetrapods and C nanotubes (see figure) are successfully obtained. With short exposure times and high contrast, the technique could be useful not only for materials science, but also for biological applications.

Abstract: The local structure of Bi4W2/3Mn1/3O8Cl is determined using quantitative transmission electron microscopy. The electron exit wave, which is closely related to the projected crystal potential, is reconstructed and used as a starting point for statistical parameter estimation. This method allows us to refine all atomic positions on a local scale, including those of the light atoms, with a precision in the picometer range. Using this method one is no longer restricted to the information limit of the electron microscope. Our results are in good agreement with x-ray powder diffraction data demonstrating the reliability of the method. Moreover, it will be shown that local effects can be interpreted using this approach.

Abstract: We have studied the evolution of the structural modulation in epitaxial, c-axis-oriented, Bi2Sr2-xLaCuO6+delta thin films when varying the La content x and for a given x as a function of oxygen content. A series of thin films with 0 <= x <= 0.8 has been prepared in situ by rf-magnetron sputtering and characterized by R(T) measurements, Rutherford backscattering spectroscopy, transmission electron microscopy, and x-ray diffraction techniques. The oxygen content of each individual film was varied by thermal annealing across the phase diagram. The evolution of the structural modulation has been thoroughly studied by x-ray diffraction in determining the variation of the amplitude of satellite reflections in special two axes 2 theta/theta-theta scans (reciprocal space scans). It is shown that the amplitude of the modulation along the c axis decreases strongly when x increases from 0 to 0.2. It is demonstrated that this variation is essentially governed by La content x and that changing the oxygen content by thermal treatments has a much lower influence, even becoming negligible for x > 0.2. Such study is important to understand the electronical properties of Bi2Sr2-xLaxCuO6+gamma thin films.

Abstract: Metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors (M-HEMTs), while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology and crystal structure of the two M-buffers showed different relaxation mechanisms. The graded InAlAs gave a cross-hatched pattern with nearly full relaxation and very effective dislocation filtering, while the bulk InP had a uniform isotropic surface with dislocations propagating further up towards the active layers. Both types of M-buffers had atomic force microscopy root-mean-square roughness values around 2030 Å. The Hall transport properties of high electron mobility transistors (HEMTs) grown on the InAlAs M-buffer, and a baseline HEMT grown lattice matched on InP, both had room-temperature mobilities >10 000 cm2/V s, while the M-HEMT on the InP M-buffer showed a decrease to 9000 cm2/V  s. Similarly, the dc parameters of a double heterojunction bipolar transistor (DHBT) grown on the InAlAs M-buffer were much closer to the baseline heterojunction bipolar transistor than a DHBT grown on the InP M-buffer. A high breakdown voltage of 11.3 V was achieved on an M-DHBT with the InAlAs M-buffer. We speculate that the degradation in device characteristics on the InP M-buffer was related to the incomplete dislocation filtering.