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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
2017 |
Semiconductor Process Integration 10 |
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|
UA library record; WoS full record |
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|
Schulze, A.; Hantschel, T.; Dathe, A.; Eyben, P.; Ke, X.; Vandervorst, W. |
Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects |
2012 |
Nanotechnology |
23 |
29 |
UA library record; WoS full record; WoS citing articles |
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