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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Bliokh, K.Y.; Karimi, E.; Padgett, M.J.; Alonso, M.A.; Dennis, M.R.; Dudley, A.; Forbes, A.; Zahedpour, S.; Hancock, S.W.; Milchberg, H.M.; Rotter, S.; Nori, F.; Ozdemir, S.K.; Bender, N.; Cao, H.; Corkum, P.B.; Hernandez-Garcia, C.; Ren, H.; Kivshar, Y.; Silveirinha, M.G.; Engheta, N.; Rauschenbeutel, A.; Schneeweiss, P.; Volz, J.; Leykam, D.; Smirnova, D.A.; Rong, K.; Wang, B.; Hasman, E.; Picardi, M.F.; Zayats, A.V.; Rodriguez-Fortuno, F.J.; Yang, C.; Ren, J.; Khanikaev, A.B.; Alu, A.; Brasselet, E.; Shats, M.; Verbeeck, J.; Schattschneider, P.; Sarenac, D.; Cory, D.G.; Pushin, D.A.; Birk, M.; Gorlach, A.; Kaminer, I.; Cardano, F.; Marrucci, L.; Krenn, M.; Marquardt, F. |
Roadmap on structured waves |
2023 |
Journal of optics |
25 |
7 |
UA library record; WoS full record; WoS citing articles |
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Dabral, A.; Lu, A.K.A.; Chiappe, D.; Houssa, M.; Pourtois, G. |
A systematic study of various 2D materials in the light of defect formation and oxidation |
2019 |
Physical chemistry, chemical physics |
21 |
1 |
UA library record; WoS full record; WoS citing articles |
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Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
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Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2017 |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
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1 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. |
Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study |
2017 |
Physical review applied |
8 |
6 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. |
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study |
2017 |
ACS applied materials and interfaces |
9 |
10 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. |
On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study |
2017 |
Journal of applied physics |
121 |
|
UA library record; WoS full record; WoS citing articles |
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van den Broek, B.; Houssa, M.; Lu, A.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. |
Silicene nanoribbons on transition metal dichalcogenide substrates : effects on electronic structure and ballistic transport |
2016 |
Nano Research |
9 |
2 |
UA library record; WoS full record; WoS citing articles |
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Suslu, A.; Wu, K.; Sahin, H.; Chen, B.; Yang, S.; Cai, H.; Aoki, T.; Horzum, S.; Kang, J.; Peeters, F.M.; Tongay, S.; |
Unusual dimensionality effects and surface charge density in 2D Mg(OH)2 |
2016 |
Scientific reports |
6 |
39 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
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Cai, H.; Kang, J.; Sahin, H.; Chen, B.; Suslu, A.; Wu, K.; Peeters, F.; Meng, X.; Tongay, S. |
Exciton pumping across type-I gallium chalcogenide heterojunctions |
2016 |
Nanotechnology |
27 |
15 |
UA library record; WoS full record; WoS citing articles |
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Meng, X.; Pant, A.; Cai, H.; Kang, J.; Sahin, H.; Chen, B.; Wu, K.; Yang, S.; Suslu, A.; Peeters, F.M.; Tongay, S.; |
Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique |
2015 |
Nanoscale |
7 |
11 |
UA library record; http://cmt.ua.ac.be/hsahin/publishedpapers/46.pdf; WoS full record; WoS citing articles |
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Aierken, Y.; Sahin, H.; Iyikanat, F.; Horzum, S.; Suslu, A.; Chen, B.; Senger, R.T.; Tongay, S.; Peeters, F.M. |
Portlandite crystal : bulk, bilayer, and monolayer structures |
2015 |
Physical review : B : condensed matter and materials physics |
91 |
29 |
UA library record; WoS full record; WoS citing articles |
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Nishio, K.; Lu, A.K.A.; Pourtois, G. |
Low-strain Si/O superlattices with tunable electronic properties : ab initio calculations |
2015 |
Physical review : B : condensed matter and materials physics |
91 |
6 |
UA library record; WoS full record; WoS citing articles |
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Chen, B.; Sahin, H.; Suslu, A.; Ding, L.; Bertoni, M.I.; Peeters, F.M.; Tongay, S. |
Environmental changes in MoTe2 excitonic dynamics by defects-activated molecular interaction |
2015 |
ACS nano |
9 |
150 |
UA library record; WoS full record; WoS citing articles |
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Yang, S.; Wang, C.; Sahin, H.; Chen, H.; Li, Y.; Li, S.S.; Suslu, A.; Peeters, F.M.; Liu, Q.; Li, J.; Tongay, S.; |
Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering |
2015 |
Nano letters |
15 |
314 |
UA library record; WoS full record; WoS citing articles |
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