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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. |
Single crystalline GaN grown on porous Si(111) by MOVPE |
2007 |
Physica status solidi: C: conferences and critical reviews |
4 |
2 |
UA library record; WoS full record; WoS citing articles |
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Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
2006 |
Journal of electronic materials |
35 |
102 |
UA library record; WoS full record; WoS citing articles |
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Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; |
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors |
2006 |
Applied physics letters |
89 |
15 |
UA library record; WoS full record; WoS citing articles |
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van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.; Germain, M. |
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN |
2005 |
Applied physics letters |
87 |
57 |
UA library record; WoS full record; WoS citing articles |
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van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. |
Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN |
2005 |
Springer proceedings in physics |
107 |
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UA library record; WoS full record; |
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Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
2004 |
Materials Research Society symposium proceedings |
798 |
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UA library record |
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van Daele, B.; Van Tendeloo, G.; Germain, M.; Leys, M.; Bougrioua, Z.; Moerman, I. |
Relation between microstructure and 2DEG properties of AlGaN/GaN structures |
2002 |
Physica status solidi: B: basic research |
234 |
1 |
UA library record; WoS full record; WoS citing articles |
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