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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. |
Single crystalline GaN grown on porous Si(111) by MOVPE |
2007 |
Physica status solidi: C: conferences and critical reviews |
4 |
2 |
UA library record; WoS full record; WoS citing articles |
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|
Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
2006 |
Journal of electronic materials |
35 |
102 |
UA library record; WoS full record; WoS citing articles |
|
|
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Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
2004 |
Materials Research Society symposium proceedings |
798 |
|
UA library record |
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