|  | Author | Title | Year  | Publication | Volume | Times cited | Additional Links | Links | 
	|  | van Oeffelen, L.; Van Roy, W.; Idrissi, H.; Charlier, D.; Lagae, L.; Borghs, G. | Ion current rectification, limiting and overlimiting conductances in nanopores | 2015 | PLoS ONE | 10 | 11 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. | Single crystalline GaN grown on porous Si(111) by MOVPE | 2007 | Physica status solidi: C: conferences and critical reviews | 4 | 2 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. | Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers | 2006 | Journal of electronic materials | 35 | 102 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. | High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers | 2004 | Materials Research Society symposium proceedings | 798 |  | UA library record |  | 
	|  | Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G. | Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films | 2001 | Journal of applied physics | 90 | 2 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. | HREM investigation of a Fe/GaN/Fe tunnel junction | 2001 | Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |  |  | UA library record; WoS full record; |  | 
	|  | Gordon, I.; Wagner, P.; Das, A.; Vanacken, J.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Ziese, M.; Borghs, G. | Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3 | 2000 | Physical review : B : condensed matter and materials physics | 62 | 18 | UA library record; WoS full record; WoS citing articles |   | 
	|  | de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects | 1997 |  |  |  | UA library record |  | 
	|  | Bogaerts, R.; de Keyser, A.; van Bockstal, L.; van der Burgt, M.; van Esch, A.; Provoost, R.; Silverans, R.; Herlach, F.; Swinnen, B.; van de Stadt, A.F.W.; Koenraad, P.M.; Wolter, J.H.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | 2D semiconductors at the Leuven pulsed field facility | 1997 | Physicalia magazine | 19 |  | UA library record |  | 
	|  | de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs | 1996 | Solid state electronics | 40 | 2 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G. | Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs | 1995 | Physica: B : condensed matter | 211 | 2 | UA library record; WoS full record; WoS citing articles |     | 
	|  | de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Hoeks, W.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs | 1995 | Physica: B : condensed matter | 211 | 2 | UA library record; WoS full record; WoS citing articles |   | 
	|  | van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Van Hove, M.; Borghs, G. | Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer | 1995 | Physical review : B : condensed matter and materials physics | 52 | 43 | UA library record; WoS full record; WoS citing articles |     | 
	|  | van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G. | High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer | 1995 |  |  |  | UA library record |  | 
	|  | van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G. | Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer | 1995 | Physical review : B : condensed matter and materials physics | 52 | 35 | UA library record; WoS full record; WoS citing articles |  | 
	|  | van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. | Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs | 1995 | Physica: B : condensed matter | 211 | 2 | UA library record; WoS full record; WoS citing articles |  | 
	|  | Bogaerts, R.; de Keyser, A.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; Borghs, G. | Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs | 1995 |  |  |  | UA library record |  | 
	|  | van der Burgt, M.; van Esch, A.; Peeters, F.M.; van Hove, M.; Borghs, G.; Herlach, F. | High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures | 1993 | Physica: B : condensed matter | 184 | 4 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. | InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy | 1992 | Applied physics letters | 60 | 20 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. | InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy | 1992 | Applied physics letters | 600 | 32 | UA library record; WoS full record; WoS citing articles |     |