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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. |
Influence of twinning on the morphology of AgBr and AgCl microcrystals |
2001 |
The journal of imaging science and technology |
45 |
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UA library record; WoS full record; WoS citing articles |
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Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
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UA library record; WoS full record; |
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Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
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UA library record; WoS full record; |
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; van Roost, C.; de Keyzer, R. |
A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals |
2001 |
The journal of imaging science and technology |
45 |
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UA library record; WoS full record; WoS citing articles |
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Schryvers, D.; Van Landuyt, J. |
Electron microscopy study of twin sequences and branching in NissAl34 3R martensite |
1992 |
ICOMAT |
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Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Electron microscopy of carbon nanotubes and related structures |
1997 |
The journal of physics and chemistry of solids |
58 |
12 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
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UA library record; WoS full record; |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
1997 |
Conference series of the Institute of Physics |
157 |
1 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
1998 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
77 |
23 |
UA library record; WoS full record; WoS citing articles |
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Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V. |
Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins |
1998 |
Journal of solid state chemistry |
135 |
3 |
UA library record; WoS full record; WoS citing articles |
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van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects and growth mechanisms of AgCl(100) tabular crystals |
1998 |
Journal of crystal growth |
187 |
8 |
UA library record; WoS full record; WoS citing articles |
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Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J. |
TEM study on precipitation behavior in Cu-Co alloys |
1998 |
Physica status solidi: A: applied research |
168 |
18 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
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Goessens, C.; Schryvers, D.; van Landuyt, J. |
Transmission electron microscopy studies of (111) twinned silver halide microcrystals |
1998 |
Microscopy research and technique |
42 |
8 |
UA library record; WoS full record; WoS citing articles |
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
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UA library record; WoS full record; |
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Nistor, L.C.; van Landuyt, J.; Dincã, G. |
HREM of defects in cubic boron nitride single crystals |
1998 |
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UA library record; WoS full record; |
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Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
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UA library record; WoS full record; |
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Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views |
1997 |
The journal of imaging science and technology |
41 |
1 |
UA library record; WoS full record; WoS citing articles |
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Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition |
1999 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
17 |
8 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
1999 |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
1999 |
Physica status solidi: A: applied research |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N. |
High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis |
1999 |
Diamonds an related materials |
8 |
7 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; van Landuyt, J.; Ralchenko, V. |
Structural aspects of CVD idamond wafers grown at different hydrogen flow rates |
1999 |
Physica status solidi: A: applied research |
171 |
15 |
UA library record; WoS full record; WoS citing articles |
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De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
1999 |
Microelectronic engineering |
45 |
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UA library record; WoS full record |
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Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane |
1999 |
Physical chemistry, chemical physics |
1 |
10 |
UA library record; WoS full record; WoS citing articles |
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de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
1999 |
The review of scientific instruments |
70 |
5 |
UA library record; WoS full record; WoS citing articles |
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Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
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Rembeza, E.S.; Richard, O.; van Landuyt, J. |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
1999 |
Materials research bulletin |
34 |
17 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
2000 |
Physical review : B : condensed matter and materials physics |
61 |
27 |
UA library record; WoS full record; WoS citing articles |
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