Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. |
An envelope function formalism for lattice-matched heterostructures |
2015 |
Physica: B : condensed matter |
470-471 |
5 |
UA library record; WoS full record; WoS citing articles |
Van de Put, M.L.; Sorée, B.; Magnus, W. |
Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field |
2017 |
Journal of computational physics |
350 |
5 |
UA library record; WoS full record; WoS citing articles |
Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
2022 |
Solid state electronics |
198 |
|
UA library record; WoS full record |
Magnus, W.; Brosens, F.; Sorée, B. |
Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations |
2009 |
Journal of physics : conference series |
193 |
2 |
UA library record; WoS full record; WoS citing articles |
Moors, K.; Sorée, B.; Magnus, W. |
Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering |
2017 |
Microelectronic engineering |
167 |
6 |
UA library record; WoS full record; WoS citing articles |
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics |
2008 |
Solid state communications |
147 |
8 |
UA library record; WoS full record; WoS citing articles |
Osca, J.; Sorée, B. |
Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction |
2021 |
Journal Of Applied Physics |
130 |
|
UA library record; WoS full record; WoS citing articles |
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. |
Phonon-assisted tunneling in direct-bandgap semiconductors |
2019 |
Journal of applied physics |
125 |
2 |
UA library record; WoS full record; WoS citing articles |
Beckers, A.; Thewissen, M.; Sorée, B. |
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors |
2018 |
Journal of applied physics |
124 |
3 |
UA library record; WoS full record; WoS citing articles |
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. |
Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions |
2018 |
Journal of applied physics |
124 |
1 |
UA library record; WoS full record; WoS citing articles |
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides |
2016 |
Journal of applied physics |
120 |
6 |
UA library record; WoS full record; WoS citing articles |
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Inter-ribbon tunneling in graphene: An atomistic Bardeen approach |
2016 |
Journal of applied physics |
119 |
6 |
UA library record; WoS full record; WoS citing articles |
Andrikopoulos, D.; Sorée, B.; De Boeck, J. |
Skyrmion-induced bound states on the surface of three-dimensional topological insulators |
2016 |
Journal of applied physics |
119 |
8 |
UA library record; WoS full record; WoS citing articles |
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors |
2015 |
Journal of applied physics |
118 |
9 |
UA library record; WoS full record; WoS citing articles |
Moors, K.; Sorée, B.; Magnus, W. |
Modeling surface roughness scattering in metallic nanowires |
2015 |
Journal of applied physics |
118 |
11 |
UA library record; WoS full record; WoS citing articles |
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. |
2D ferromagnetism at finite temperatures under quantum scrutiny |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. |
Resistivity scaling and electron relaxation times in metallic nanowires |
2014 |
Journal of applied physics |
116 |
17 |
UA library record; WoS full record; WoS citing articles |
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
2014 |
Journal of applied physics |
115 |
34 |
UA library record; WoS full record; WoS citing articles |
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
2014 |
Journal of applied physics |
115 |
15 |
UA library record; WoS full record; WoS citing articles |
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. |
Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing |
2010 |
Journal Of Physical Chemistry C |
114 |
54 |
UA library record; WoS full record; WoS citing articles |
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
2013 |
Journal of applied physics |
113 |
4 |
UA library record; WoS full record; WoS citing articles |
Duflou, R.; Ciubotaru, F.; Vaysset, A.; Heyns, M.; Sorée, B.; Radu, I.P.; Adelmann, C. |
Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides |
2017 |
Applied physics letters |
111 |
|
UA library record; WoS full record; WoS citing articles |
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
2011 |
Journal of applied physics |
109 |
41 |
UA library record; WoS full record; WoS citing articles |
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A. |
Towards CMOS-compatible single-walled carbon nanotube resonators |
2013 |
Microelectronic engineering |
107 |
6 |
UA library record; WoS full record; WoS citing articles |
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. |
Zener tunneling in semiconductors under nonuniform electric fields |
2010 |
Journal of applied physics |
107 |
22 |
UA library record; WoS full record; WoS citing articles |
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |