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Author Schryvers, D.; Shi, H.; Martinez, G.T.; Van Aert, S.; Frenzel, J.; Van Humbeeck, J.
Title Nano- and microcrystal investigations of precipitates, interfaces and strain fields in Ni-Ti-Nb by various TEM techniques Type P1 Proceeding
Year 2013 Publication Materials science forum T2 – 9th European Symposium on Martensitic Transformations (ESOMAT 2012), SEP 09-16, 2012, St Petersburg, RUSSIA Abbreviated Journal
Volume 738/739 Issue Pages 65-71
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract In the present contribution several advanced electron microscopy techniques are employed in order to describe chemical and structural features of the nano- and microstructure of a Ni45.5Ti45.5Nb9 alloy. A line-up of Nb-rich nano-precipitates is found in the Ni-Ti-rich austenite of as-cast material. Concentration changes of the matrix after annealing are correlated with changes in the transformation temperatures. The formation of rows and plates of larger Nb-rich precipitates and particles is described. The interaction of a twinned martensite plate with a Nb-rich nano-precipitate is discussed and the substitution of Nb atoms on the Ti-sublattice in the matrix is confirmed.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000316089000011 Publication Date 2013-03-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1662-9752; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Fwo Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104692 Serial 2247
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Author Wang, X.; Amin-Ahmadi, B.; Schryvers, D.; Verlinden, B.; Van Humbeeck, J.
Title Effect of annealing on the transformation behavior and mechanical properties of two nanostructured Ti-50.8at.%Ni thin wires produced by different methods Type A1 Journal article
Year 2013 Publication Materials science forum Abbreviated Journal
Volume 738/739 Issue Pages 306-310
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A Ti-50.8at.%Ni wire produced using a co-drawing method and a commercial Ti-50.8at.%Ni wire were annealed at different temperatures between 450°C and 700°C. Grains with diameter less than 100nm were revealed by transmission electron microscopy for both wires before annealing treatment. However, the microstructural heterogeneity of the co-drawn wire is more obvious than that of the commercial wire. Multi-stage martensitic transformation was observed in the co-drawn wire, compared with the one-stage A↔M transformation in the commercial wire after annealing at 600°C for 30min. The differences of total elongation, plateau strain and pseudoelastic recoverable strain between the commercial wire and the co-drawn wire were also observed. The differences of the transformation behavior and mechanical properties between the commercial wire and the co-drawn wire are attributed to the microstructural difference between these two wires.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000316089000055 Publication Date 2013-03-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1662-9752; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104691 Serial 798
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Author Shi, H.; Frenzel, J.; Schryvers, D.
Title EM characterization of precipitates in as-cast and annealed Ni45.5Ti45.5Nb9 shape memory alloys Type P1 Proceeding
Year 2013 Publication Materials science forum Abbreviated Journal
Volume 738/739 Issue Pages 113-117
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract Nb-rich precipitates in the matrix of as-cast and annealed Ni45.5Ti45.5Nb9 alloys are investigated by scanning and scanning transmission electron microscopy, including slice-and-view and geometric phase analysis (GPA). The Nb-rich bcc nano-precipitates in the as-cast alloy have a 10% lattice parameter difference with the B2 matrix and reveal compensating interface dislocations. The 3D reconstruction of the configuration of small Nb-rich precipitates in the annealed alloy reveals a wall-like distribution of precipitates, which may increase the thermal hysteresis of the material.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos 000316089000020 Publication Date 2013-03-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1662-9752; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Fwo Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104690 Serial 1028
Permanent link to this record
 

 
Author Cao, S.; Tirry, W.; van den Broek, W.; Schryvers, D.
Title 3D reconstruction of Ni4Ti3 precipitates in a Ni51Ti49 alloy in a FIB/SEM dual-beam system Type A1 Journal article
Year 2008 Publication Materials science forum Abbreviated Journal
Volume 583 Issue Pages 277-284
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract Ni4Ti3 precipitates play an important role in the shape memory and superelastic behaviour of thermo-mechanically treated Ni-Ti material. The 3D morphology and distribution of such precipitates with lenticular shape and rhombohedral atomic structure in the austenitic B2 matrix of a binary Ni-rich Ni-Ti alloy has been elucidated via a slice view procedure in a Dual-Beam FIB/SEM system. With the sequence of cross-section SE images obtained from the SEM, a 3D reconstruction has been achieved after proper alignment and image processing, from which both qualitative and quantitative analysis can be performed. Careful imaging is needed to ensure that all variants of the precipitates are observed with equal probability, regardless sample orientation. Moreover, due to the weak contrast of the precipitates, proper imaging conditions need to be selected to allow for semi-automated image treatment. Finally, a volume ratio of 10.2% for the Ni4Ti3 precipitates could be calculated, summed over all variants, which yields a net composition of Ni50.36Ti49.64 for the matrix, leading to an increase of 113 degrees for the martensitic start temperature Ms. Also, the expected relative orientation of the different variants of the precipitates could be confirmed. In the near future, other quantitative measures on the distribution of the precipitates can be expected.
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos Publication Date 2009-03-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1662-9752; ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Multimat; Fwo Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:77454 Serial 16
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Author Hendrickx, M.; Paulus, A.; Kirsanova, M.A.; Van Bael, M.K.; Abakumov, A.M.; Hardy, A.; Hadermann, J.
Title The influence of synthesis method on the local structure and electrochemical properties of Li-rich/Mn-rich NMC cathode materials for Li-Ion batteries Type A1 Journal article
Year 2022 Publication Nanomaterials Abbreviated Journal Nanomaterials-Basel
Volume 12 Issue 13 Pages 2269-18
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Electrochemical energy storage plays a vital role in combating global climate change. Nowadays lithium-ion battery technology remains the most prominent technology for rechargeable batteries. A key performance-limiting factor of lithium-ion batteries is the active material of the positive electrode (cathode). Lithium- and manganese-rich nickel manganese cobalt oxide (LMR-NMC) cathode materials for Li-ion batteries are extensively investigated due to their high specific discharge capacities (>280 mAh/g). However, these materials are prone to severe capacity and voltage fade, which deteriorates the electrochemical performance. Capacity and voltage fade are strongly correlated with the particle morphology and nano- and microstructure of LMR-NMCs. By selecting an adequate synthesis strategy, the particle morphology and structure can be controlled, as such steering the electrochemical properties. In this manuscript we comparatively assessed the morphology and nanostructure of LMR-NMC (Li1.2Ni0.13Mn0.54Co0.13O2) prepared via an environmentally friendly aqueous solution-gel and co-precipitation route, respectively. The solution-gel (SG) synthesized material shows a Ni-enriched spinel-type surface layer at the {200} facets, which, based on our post-mortem high-angle annual dark-field scanning transmission electron microscopy and selected-area electron diffraction analysis, could partly explain the retarded voltage fade compared to the co-precipitation (CP) synthesized material. In addition, deviations in voltage fade and capacity fade (the latter being larger for the SG material) could also be correlated with the different particle morphology obtained for both materials.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000824547500001 Publication Date 2022-07-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2079-4991 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.3 Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: 5.3
Call Number UA @ admin @ c:irua:189591 Serial 7098
Permanent link to this record
 

 
Author Lebedev, O.I.; Bals, S.; Van Tendeloo, G.; Snoeck, G.E.; Retoux, R.; Boudin, S.; Hervieu, M.
Title Mixed (Sr1-xCax)33Bi24Al48O141 fullerenoids: the defect structure analysed by (S)TEM techniques Type A1 Journal article
Year 2006 Publication International journal of materials research Abbreviated Journal Int J Mater Res
Volume 97 Issue 7 Pages 978-984
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract (Sr1-xCax)(33)Bi-24,partial derivative Al48O141+3 partial derivative/2 fullerenoid solid solutions have been synthesized and the effect of partial substitution of Sr by Ca has been characterized by (scanning) transmission electron microscopy, applying different imaging methods. Most of the defects commonly observed in face centered cubic compounds, have also been observed in (Sr1-xCax)(33)Bi24-partial derivative Al48O141+3 partial derivative/2. Based on purely geometrical and topological models, structural presentations for the coherent twin boundaries and stacking faults have been constructed on the basis of complex spherical “Al84O210” units. The results are compared to defects observed in the crystallite fullerite C-60.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000239916700017 Publication Date 2013-12-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-5282;2195-8556; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.681 Times cited 1 Open Access
Notes Approved Most recent IF: 0.681; 2006 IF: NA
Call Number UA @ lucian @ c:irua:60966 Serial 2091
Permanent link to this record
 

 
Author van Dyck, D.; Van Aert, S.; Croitoru, M.
Title Atomic resolution electron tomography: a dream? Type A1 Journal article
Year 2006 Publication International journal of materials research Abbreviated Journal Int J Mater Res
Volume 97 Issue 7 Pages 872-879
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000239916700003 Publication Date 2013-12-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-5282;2195-8556; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.681 Times cited 6 Open Access
Notes Approved Most recent IF: 0.681; 2006 IF: NA
Call Number UA @ lucian @ c:irua:60965 Serial 176
Permanent link to this record
 

 
Author Zelaya, E.; Schryvers, D.
Title FCC surface precipitation in Cu-Zn-Al after low angle GA+ ion irradiation Type A1 Journal article
Year 2010 Publication Materials transactions Abbreviated Journal Mater Trans
Volume 51 Issue 12 Pages 2177-2180
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The precipitation of a disordered FCC surface structure after low angle Ga+ ion irradiation during focused ion beam thinning of a B2 Cu-Zn-Al alloy with e/a=1.48 is reported. Conventional as well as high-resolution transmission electron microscopy techniques reveal FCC layers on both sides of the thinned sample. The occurrence of this structure is attributed to disordering and dezincification of the alloy resulting from the sputtering process during the irradiation. Changes in crystallographic sample orientation with respect to the incoming ion beam do not have a significant effect on the appearance of the FCC surface structure.
Address
Corporate Author Thesis
Publisher Place of Publication Sendai Editor
Language Wos 000287390300009 Publication Date 2010-11-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1347-5320;1345-9678; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.713 Times cited 2 Open Access
Notes Bof; Fwo Approved Most recent IF: 0.713; 2010 IF: 0.787
Call Number UA @ lucian @ c:irua:85997 Serial 1175
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Author Santamarta, R.; Schryvers, D.
Title Microstructure of a partially crystallised Ti50Ni25Cu25 melt-spun ribbon Type A1 Journal article
Year 2003 Publication Materials transactions Abbreviated Journal Mater Trans
Volume 44 Issue 9 Pages 1760-1767
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000186013100023 Publication Date 2005-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1345-9678; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.713 Times cited 23 Open Access
Notes Approved Most recent IF: 0.713; 2003 IF: 1.159
Call Number UA @ lucian @ c:irua:48773 Serial 2064
Permanent link to this record
 

 
Author Schryvers, D.; Potapov, P.L.
Title R-phase structure refinement using electron diffraction data Type A1 Journal article
Year 2002 Publication Materials transactions Abbreviated Journal Mater Trans
Volume 43 Issue 5 Pages 774-779
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000176212100002 Publication Date 2005-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1345-9678; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.713 Times cited 25 Open Access
Notes Approved Most recent IF: 0.713; 2002 IF: 0.841
Call Number UA @ lucian @ c:irua:48772 Serial 2805
Permanent link to this record
 

 
Author Delalieux, F.; Tsuji, K.; Wagatsuma, K.; Van Grieken, R.
Title Material analysis methods applied to the study of ancient monuments, works of art and artefacts Type A1 Journal article
Year 2002 Publication Materials transactions Abbreviated Journal
Volume 43 Issue 9 Pages 2197-2200
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000178449800008 Publication Date 2005-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:40618 Serial 8208
Permanent link to this record
 

 
Author Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S.; Leibold, B.; Habermeier, H.U.; Phillipp, F.
Title Structure and magnetotransport properties of La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition Type P1 Proceeding
Year 1998 Publication Materials Research Society symposium proceedings T2 – Symposium on Advances in Laser Ablation of Materials at the 1998 MRS, Spring Meeting, April 13-16, 1998, San Francisco, Calif. Abbreviated Journal
Volume Issue Pages 219-224
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract La1-xCaxMnO3-delta (LCMO) thin films are grown by pulsed laser deposition on a (100) SrTiO3 substrate at temperatures between 530 degrees C and 890 degrees C. The magnetotransport properties show a high negative magnetoresistance and a shift of the maximum of the R(T) curve as function of temperature. The Curie temperature changes with deposition temperature and film quality in the range of 100-220K. The film quality is characterised by X-ray diffraction and transmission electron microscopy (TEM); film and target compositions were verified by atomic emission spectroscopy. The local structure of the film depends on the growth conditions and substrate temperature. TEM reveals a slight distortion of the film leading to a breakdown of the symmetry from orthorhombic to monoclinic. At the highest growth temperatures, a well defined interface is observed within the LCMO film, parallel to the substrate surface; this interface divides the film into two lamellae with a different microstructure. The lamella close to the substrate is perfectly coherent with the substrate, suggesting that it is strained as a result of the lattice parameter mismatch; the upper lamella shows a typical domain structure with unusual translation interfaces characterised by a displacement vector of the type 1/2[010](m) and 1/2[001](m) when referred ten the monoclinic lattice.
Address
Corporate Author Thesis
Publisher Materials research society Place of Publication Warrendale Editor
Language Wos 000077696000032 Publication Date 2011-04-05
Series Editor Series Title Abbreviated Series Title
Series Volume 526 Series Issue Edition
ISSN 1946-4274; ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95838 Serial 3283
Permanent link to this record
 

 
Author Mortet, V.; Zhang, L.; Echert, M.; Soltani, A.; d' Haen, J.; Douheret, O.; Moreau, M.; Osswald, S.; Neyts, E.; Troadec, D.; Wagner, P.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K.
Title Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition Type A3 Journal article
Year 2009 Publication Materials Research Society symposium proceedings Abbreviated Journal
Volume Issue 1203 Pages
Keywords A3 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data.
Address
Corporate Author Thesis
Publisher Place of Publication Wuhan Editor
Language Wos Publication Date 2010-03-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1946-4274; ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:81646 Serial 327
Permanent link to this record
 

 
Author Kahraman, Z.; Yagmurcukardes, M.; Sahin, H.
Title Functionalization of single-layer TaS₂ and formation of ultrathin Janus structures Type A1 Journal article
Year 2020 Publication Journal Of Materials Research Abbreviated Journal J Mater Res
Volume 35 Issue 11 Pages 1397-1406
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Ab initio calculations are performed to investigate the structural, vibrational, electronic, and piezoelectric properties of functionalized single layers of TaS2. We find that single-layer TaS2 is a suitable host material for functionalization via fluorination and hydrogenation. The one-side fluorinated (FTaS2) and hydrogenated (HTaS2) single layers display indirect gap semiconducting behavior in contrast to bare metallic TaS2. On the other hand, it is shown that as both surfaces of TaS2 are saturated anti-symmetrically, the formed Janus structure is a dynamically stable metallic single layer. In addition, it is revealed that out-of-plane piezoelectricity is created in all anti-symmetric structures. Furthermore, the Janus-type single-layer has the highest specific heat capacity to which longitudinal and transverse acoustical phonon modes have contribution at low temperatures. Our findings indicate that single-layer TaS2 is suitable for functionalization via H and F atoms that the formed, anti-symmetric structures display distinctive electronic, vibrational, and piezoelectric properties.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000540764300005 Publication Date 2020-04-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.7 Times cited 1 Open Access
Notes ; Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. Acknowledges financial support from the TUBITAK under the project number 117F095. H.S. acknowledges support from Turkish Academy of Sciences under the GEBIP program. This work is supported by the Flemish Science Foundation (FWO-Vl) by a post-doctoral fellowship (M.Y.). ; Approved Most recent IF: 2.7; 2020 IF: 1.673
Call Number UA @ admin @ c:irua:170185 Serial 6525
Permanent link to this record
 

 
Author Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G.
Title Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study Type A1 Journal article
Year 2005 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume 20 Issue 7 Pages 1741-1750
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000230296100012 Publication Date 2005-07-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.673 Times cited Open Access
Notes Bil 01/73; IAP V-1 Approved Most recent IF: 1.673; 2005 IF: 2.104
Call Number UA @ lucian @ c:irua:54884 Serial 3631
Permanent link to this record
 

 
Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J.
Title Microstructural investigation of BaTiO3 thin films deposited on (001) MgO Type A1 Journal article
Year 2002 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume 17 Issue 8 Pages 1923-1931
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The microstructure of BaTiO3 thin films, epitaxially deposited on (001) MgO by pulsed laser ablation, has been investigated by transmission electron microscopy. The films are always c-axis-orientated, but dislocations, {111} stacking faults, and antiphase boundaries are frequently observed. Conventional TEM and high-resolution microscopy allow one to deduce the Burgers vectors of dislocations as b(1) = <100> or b(2) = <110>, both being perfect dislocations. Most extrinsic stacking faults are ending at 1/3<112> or 1/3<111> partial dislocations; the displacement vector of the antiphase boundaries is 1/2<101>. Studying the interfacial structure by means of zone images taken along [100] and [110] shows that the misfit is mainly released by dislocations with Burgers vectors of 1/2<110> and 1/2<101>.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000177208800010 Publication Date 2008-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.673 Times cited 8 Open Access
Notes Approved Most recent IF: 1.673; 2002 IF: 1.530
Call Number UA @ lucian @ c:irua:103343 Serial 2044
Permanent link to this record
 

 
Author Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates Type A1 Journal article
Year 2001 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume 16 Issue 3 Pages 701-708
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000167407200011 Publication Date 2008-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.673 Times cited 4 Open Access
Notes Approved Most recent IF: 1.673; 2001 IF: 1.539
Call Number UA @ lucian @ c:irua:103926 Serial 1588
Permanent link to this record
 

 
Author Ahonen, P.P.; Kauppinen, E.I.; Joubert, J.C.; Deschanvres, J.L.; Van Tendeloo, G.
Title Preparation of nanocrystalline titania powder via aerosol pyrolysis of titanium tetrabutoxide Type A1 Journal article
Year 1999 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume 14 Issue 10 Pages 3938-3948
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Nanocrystalline titanium dioxide was prepared via aerosol pyrolysis of titanium alkoxide precursor at 200-580 degrees C in air and in nitrogen atmospheres. Powders were characterized by x-ray diffraction, thermogravimetric analysis, Brunauer-Emmett-Teller analysis, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, x-ray fluorescence, Raman and infrared spectroscopy, and Berner-type low-pressure impactor. The anatase phase transition was initiated at 500 degrees C in nitrogen and at 580 degrees C in air. Under other conditions amorphous powders were observed and transformed to nanocrystalline TiO2 via thermal postannealing. In air, smooth and spherical particles with 2-4-mu m diameter were formed with an as-expected tendency to convert to rutile in the thermal postannealings. In nitrogen, a fraction of the titanium tetrabutoxide precursor evaporated and formed ultrafine particles via the gas-to-particle conversion. At 500 degrees C thermally stable anatase phase was formed in nitrogen. A specific surface area as high as 280 m(2) g(-1) was observed for an as-prepared powder.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000083163700019 Publication Date 2008-03-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.673 Times cited 38 Open Access
Notes Approved Most recent IF: 1.673; 1999 IF: 1.574
Call Number UA @ lucian @ c:irua:103485 Serial 2705
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 

 
Author Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A.
Title Theoretical study of silicene and germanene Type P1 Proceeding
Year 2013 Publication Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The structural and electronic properties of silicene and germanene on metallic and non-metallic substrates are investigated theoretically, using first-principles simulations. We first study the interaction of silicene with Ag(111) surfaces, focusing on the (4x4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), silicene is predicted to be semiconducting, with a computed energy gap of about 0.3 eV. However, the charge transfer occurring at the silicene/Ag(111) interface leads to an overall metallic system. We next investigate the interaction of silicene and germanene with hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (semiconducting) (0001) ZnS or ZnSe surfaces, silicene and germanene are found to be semiconducting. Remarkably, the nature (indirect or direct) and magnitude of their energy band gap can be controlled by an out-of-plane electric field.
Address
Corporate Author Thesis
Publisher Electrochemical soc inc Place of Publication Pennington Editor
Language Wos 000354468000006 Publication Date 2013-05-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-60768-374-2; 978-1-62332-023-2 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 6 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:134451 Serial 4529
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Author Tian, H.; Schryvers, D.; Mohanchandra, K.P.; Carman, G.P.; van Humbeeck, J.
Title Fabrication and characterization of functionally graded Ni-Ti multilayer thin films Type A1 Journal article
Year 2009 Publication Functional materials letters Abbreviated Journal Funct Mater Lett
Volume 2 Issue 2 Pages 61-66
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A functionally graded multilayer NiTi thin film was deposited on a SiO2/Si substrate by d.c. sputtering using a ramped heated NiTi alloy target. The stand-alone films were crystallized at 500°C in vacuum better than 10-7 Torr. Transmission electron microscopy micrographs taken along the film cross section show two distinct regions, thin and thick, with weak R and B2 phases, respectively. The film compositions along the thickness were measured and quantified using the standard-less EELSMODEL method. The film deposited during the initial thermal ramp (thin regions) displays an average of 54 at.% Ni while the film deposited at a more elevated target temperature (thick regions) shows about 51 at.% Ni.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000271077000003 Publication Date 2009-07-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1793-6047;1793-7213; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.234 Times cited 9 Open Access
Notes Fwo Approved Most recent IF: 1.234; 2009 IF: 2.561
Call Number UA @ lucian @ c:irua:77655 Serial 1165
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Author Malard, B.; Pilch, J.; Sittner, P.; Gartnerova, V.; Delville, R.; Schryvers, D.; Curfs, C.
Title Microstructure and functional property changes in thin Ni-Ti wires heat teated by electric current: high energy X-ray and TEM investigations Type A1 Journal article
Year 2009 Publication Functional materials letters Abbreviated Journal Funct Mater Lett
Volume 2 Issue 2 Pages 45-54
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High energy synchrotron X-ray diffraction, transmission electron microscopy and mechanical testing were employed to investigate the evolution of microstructure, texture and functional superelastic properties of 0.1 mm thin as drawn NiTi wires subjected to a nonconventional heat treatment by controlled electric current (FTMT-EC method). As drawn NiTi wires were prestrained in tension and exposed to a sequence of short DC power pulses in the millisecond range. The annealing time in the FTMT-EC processing can be very short but the temperature and force could be very high compared to the conventional heat treatment of SMAs. It is shown that the heavily strained, partially amorphous microstructure of the as drawn NiTi wire transforms under the effect of the DC pulse and tensile stress into a wide range of annealed nanosized microstructures depending on the pulse time. The functional superelastic properties and microstructures of the FTMT-EC treated NiTi wire are comparable to those observed in straight annealed wires.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000271077000001 Publication Date 2009-07-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1793-6047;1793-7213; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.234 Times cited 21 Open Access
Notes Multimat Approved Most recent IF: 1.234; 2009 IF: 2.561
Call Number UA @ lucian @ c:irua:77656 Serial 2052
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Author Bussmann-Holder, A.; Michel, K.H.
Title The isotope effect in hydrogen-bonded systems Type A1 Journal article
Year 1998 Publication International journal of modern physics: B: condensed matter physics, statistical physics, applied physics T2 – 1st International Conference on New Theories, Discoveries, and, Applications of Superconductors and Related Materials (New3SC-1), FEB 19-24, 19 Abbreviated Journal Int J Mod Phys B
Volume 12 Issue 29-31 Pages 3406-3408
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The giant isotope effect on the ferro- and antiferroelectric transition temperature upon deuteration of hydrogen-bonded systems is well known experimentally since various decades. Yet, theoretically only recently a microscopic understanding of this effect has been achieved which, specifically, took into account the geometry of the O ... H ... O bond. The implications of this modeling are multiple as numerous hydrogen-bonded organic systems show the same effects as ferro- and antiferroelectrics, i.e., cooperative proton tunneling at a well-defined temperature.
Address
Corporate Author Thesis
Publisher Place of Publication Singapore Editor
Language Wos 000079114500104 Publication Date 2003-10-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0217-9792;1793-6578; ISBN Additional Links UA library record; WoS full record
Impact Factor 0.736 Times cited Open Access
Notes Approved Most recent IF: 0.736; 1998 IF: 0.987
Call Number UA @ lucian @ c:irua:102920 Serial 3589
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Author Afanasov, I.M.; Van Tendeloo, G.
Title Zirconia-modified exfoliated graphite Type A1 Journal article
Year 2011 Publication Inorganic materials Abbreviated Journal Inorg Mater+
Volume 47 Issue 6 Pages 603-608
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Zirconia has been incorporated into exfoliated graphite (EG) through the anodic polarization in the natural graphite-ZrO(NO3)2-HNO3-H2O system, followed by flash heating. The thermal properties of the oxidized graphites employed as precursors to EG have been studied by thermogravimetry in combination with differential scanning calorimetry, and the distribution of ZrO2 particles in the EG has been assessed by scanning and transmission electron microscopy. Conditions are described for the preparation of EG with bulk densities in the range 1.34.7 g/l and ZrO2 contents in the range 434 wt %.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000291698100008 Publication Date 2011-05-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0020-1685;1608-3172; ISBN Additional Links UA library record; WoS full record
Impact Factor 0.62 Times cited Open Access
Notes Approved Most recent IF: 0.62; 2011 IF: 0.414
Call Number UA @ lucian @ c:irua:90447 Serial 3933
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Author Avetisyan, A.A.; Partoens, B.; Peeters, F.M.
Title Electric field tuning of the band gap in four layers of graphene with different stacking order Type P1 Proceeding
Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal
Volume Issue Pages 84140-84148
Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000303856600012 Publication Date 2012-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume 8414 Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the BelgianScience Policy (IAP). One of us (A.A.A.) was supported by a fellowship from the Belgian Federal Science Policy Office (BELSPO). ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:113046 Serial 886
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Author Djotyan, A.P.; Avetisyan, A.A.; Hao, Y.L.; Peeters, F.M.
Title Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip Type P1 Proceeding
Year 2012 Publication Proceedings of the Society of Photo-optical Instrumentation Engineers T2 – Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA Abbreviated Journal
Volume Issue Pages 84140-84148
Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000303856600020 Publication Date 2012-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume 8414 Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), and the Belgian Science Policy. One of us (AAA) was supported by a fellowship from the Belgian Federal Science Policy Office (Belspo). ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:113047 Serial 2987
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Author Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W.
Title Structural characterization of SnS crystals formed by chemical vapour deposition Type A1 Journal article
Year 2017 Publication Journal of microscopy T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND Abbreviated Journal J Microsc-Oxford
Volume 268 Issue 3 Pages 276-287
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract <script type='text/javascript'>document.write(unpmarked('The crystal and defect structure of SnS crystals grown using chemical vapour deposition for application in electronic devices are investigated. The structural analysis shows the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nanometer scale thickness, and much thicker but smaller crystallites. Both show similar Raman response associated with SnS. The structural analysis with transmission electron microscopy shows that the flakes are single crystals of -SnS with [010] normal to the substrate. Parallel with the surface of the flakes, lamellae with varying thickness of a new SnS phase are observed. High-resolution transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), first-principles simulations (DFT) and nanobeam diffraction (NBD) techniques are employed to characterise this phase in detail. DFT results suggest that the phase is a strain stabilised \u0027 one grown epitaxially on the -SnS crystals. TEM analysis shows that the crystallites are also -SnS with generally the [010] direction orthogonal to the substrate. Contrary to the flakes the crystallites consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. Under high-dose electron irradiation, the SnS structure is reduced and -Sn formed. It is shown that this damage only occurs for SnS in direct contact with SiO2. Lay description SnS is a p-type semiconductor, which has attracted significant interest for electronic devices due to its unique properties, low-toxicity and abundance of Sn in nature. Although in the past it has been most extensively studied as the absorber material in solar cells, it has recently garnered interest for application as a p-type two-dimensional semiconductor in nanoelectronic devices due to its anisotropic layered structure similar to the better known phosphorene. Tin sulphide can take the form of several phases and the electronic properties of the material depend strongly on its crystal structure. It is therefore crucial to study the crystal structure of the material in order to predict the electronic properties and gain insight into the growth mechanism. In this work, SnS crystals deposited using a chemical vapour deposition technique are investigated extensively for their crystal and defect structure using transmission electron microscopy (TEM) and related techniques. We find the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nm scale thickness, and much thicker but smaller crystallites. The flakes are single crystals of -SnS and contain lamellae with varying thickness of a different phase which appear to be -SnS at first glance. High-resolution scanning transmission electron microscopy is used to characterise these lamellae where the annular bright field (ABF) mode better reveals the position of the sulphur columns. The sulphur columns in the lamellae are found to be shifted relative to the -SnS structure which indicates the formation of a new phase which is a distorted version of the phase which we tentatively refer to as \u0027-SnS. Simulations based on density functional theory (DFT) are used to model the interface and a similar shift of sulphur columns in the -SnS layer is observed which takes place as a result of strong interaction at the interface between the two phases resulting in strain transfer. Nanobeam electron diffraction (NBD) is used to map the lattice mismatch in the thickness of the flakes which reveals good in-plane matching and some expansion out-of-plane in the lamellae. Contrary to the flakes the crystallites are made solely of -SnS and consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. At high electron doses, SnS is reduced to -Sn, however the damage occurs only for SnS in direct contact with SiO2.'));
Address
Corporate Author Thesis
Publisher Wiley Place of Publication Hoboken Editor
Language Wos 000415900300009 Publication Date 2017-09-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2720 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.692 Times cited 2 Open Access Not_Open_Access
Notes Approved Most recent IF: 1.692
Call Number UA @ lucian @ c:irua:147692 Serial 4898
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Author Reyntjens, P.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.
Title Ultrascaled graphene-capped interconnects : a quantum mechanical study Type P1 Proceeding
Year 2023 Publication Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany Abbreviated Journal
Volume Issue Pages 1-3
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract In this theoretical study, we assess the impact of a graphene capping layer on the resistivity of defective, extremely scaled interconnects. We investigate the effect of graphene capping on the electronic transport in ultrascaled interconnects, in the presence of grain boundary defects in the metal layer. We compare the results obtained using our quantum mechanical model to a simple parallel-conductor model and find that the parallel-conductor model does not capture the effect of the graphene cap correctly. At 0.5 nm metal thickness, the parallel-conductor model underestimates the conductivity by 3.0% to 4.0% for single-sided and double sided graphene capping, respectively.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001027381700006 Publication Date 2023-06-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 979-83-503-1097-9 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:198343 Serial 8949
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Author Hadermann, J.; Abakumov, A.M.
Title Structure solution and refinement of metal-ion battery cathode materials using electron diffraction tomography Type A1 Journal article
Year 2019 Publication And Materials Abbreviated Journal
Volume 75 Issue 4 Pages 485-494
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The applicability of electron diffraction tomography to the structure solution and refinement of charged, discharged or cycled metal-ion battery positive electrode (cathode) materials is discussed in detail. As these materials are often only available in very small amounts as powders, the possibility of obtaining single-crystal data using electron diffraction tomography (EDT) provides unique access to crucial information complementary to X-ray diffraction, neutron diffraction and high-resolution transmission electron microscopy techniques. Using several examples, the ability of EDT to be used to detect lithium and refine its atomic position and occupancy, to solve the structure of materials ex situ at different states of charge and to obtain in situ data on structural changes occurring upon electrochemical cycling in liquid electrolyte is discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000480512600002 Publication Date 2019-08-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes ; The following funding is acknowledged: Fonds Wetenschappelijk Onderzoek (grant No. G040116N); Russian Foundation of Basic Research (grant No. 17-03-00370-a). ; Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:161846 Serial 5397
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Author Shi, W.; Pandey, T.; Lindsay, L.; Woods, L.M.
Title Vibrational properties and thermal transport in quaternary chalcogenides : the case of Te-based compositions Type A1 Journal article
Year 2021 Publication Physical review materials Abbreviated Journal
Volume 5 Issue 4 Pages 045401
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Vibrational thermal properties of CuZn2InTe4, AgZn2InTe4, and Cu2CdSnTe4, derived from binary II-VI zinc-blendes, are reported based on first-principles calculations. While the chalcogenide atoms in these materials have the same lattice positions, the cation atom arrangements vary, resulting in different crystal symmetries and subsequent properties. The compositional differences have important effects on the vibrational thermal characteristics of the studied materials, which demonstrate that low-frequency optical phonons hybridize with acoustic phonons and lead to enhanced phonon-phonon scattering and low lattice thermal conductivities. The phonon density of states, mode Gruneisen parameters, and phonon scattering rates are also calculated, enabling deeper insight into the microscopic thermal conduction processes in these materials. Compositional variations drive differences among the three materials considered here; nonetheless, their structural similarities and generally low thermal conductivities (0.5-4 W/mK at room temperature) suggest that other similar II-VI zinc-blende derived materials will also exhibit similarly low values, as also corroborated by experimental data. This, combined with the versatility in designing a variety of motifs on the overall structure, makes quaternary chalcogenides interesting for thermal management and energy conversion applications that require low thermal conductivity.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000655931400005 Publication Date 2021-04-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2475-9953 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:179140 Serial 7045
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