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Author Aussems, D.U.B.; Bal, K.M.; Morgan, T.W.; van de Sanden, M.C.M.; Neyts, E.C.
Title (down) Mechanisms of elementary hydrogen ion-surface interactions during multilayer graphene etching at high surface temperature as a function of flux Type A1 Journal article
Year 2018 Publication Carbon Abbreviated Journal Carbon
Volume 137 Issue Pages 527-532
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In order to optimize the plasma-synthesis and modification process of carbon nanomaterials for applications such as nanoelectronics and energy storage, a deeper understanding of fundamental hydrogengraphite/graphene interactions is required. Atomistic simulations by Molecular Dynamics have proven to be indispensable to illuminate these phenomena. However, severe time-scale limitations restrict them to very fast processes such as reflection, while slow thermal processes such as surface diffusion and molecular desorption are commonly inaccessible. In this work, we could however reach these thermal processes for the first time at time-scales and surface temperatures (1000 K) similar to high-flux plasma exposure experiments during the simulation of multilayer graphene etching by 5 eV H ions. This was achieved by applying the Collective Variable-Driven Hyperdynamics biasing technique, which extended the inter-impact time over a range of six orders of magnitude, down to a more realistic ion-flux of 1023m2s1. The results show that this not only causes a strong shift from predominant ion-to thermally induced interactions, but also significantly affects the hydrogen uptake and surface evolution. This study thus elucidates H ion-graphite/graphene interaction mechanisms and stresses the importance of including long time-scales in atomistic simulations at high surface temperatures to understand the dynamics of the ion-surface system.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000440661700056 Publication Date 2018-05-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0008-6223 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 6.337 Times cited 4 Open Access Not_Open_Access: Available from 25.05.2020
Notes DIFFER is part of the Netherlands Organisation for Scientific Research (NWO). K.M.B. is funded as PhD fellow (aspirant) of the FWO-Flanders (Fund for Scientific Research-Flanders), Grant 11V8915N. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the FWO and the Flemish Government e department EWI. Approved Most recent IF: 6.337
Call Number PLASMANT @ plasmant @c:irua:152172 Serial 4993
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Author Fleurov, V.; Kikoin, K.; Ivanov, V.A.; Krstajic, P.M.; Peeters, F.M.
Title (down) Mechanisms of double magnetic exchange in dilute magnetic semiconductors Type A1 Journal article
Year 2004 Publication Journal of magnetism and magnetic materials T2 – International Conference on Magnetism (ICM 2003), JUL 27-AUG 01, 2003, Rome, ITALY Abbreviated Journal J Magn Magn Mater
Volume 272 Issue Part 3 Pages 1967-1968
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T-C estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism. (C) 2003 Elsevier B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000222236800142 Publication Date 2004-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-8853; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.63 Times cited 12 Open Access
Notes Approved Most recent IF: 2.63; 2004 IF: 1.031
Call Number UA @ lucian @ c:irua:103233 Serial 1981
Permanent link to this record
 
 
Author Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K.
Title (down) Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium Type A1 Journal article
Year 2011 Publication The journal of physical chemistry: C : nanomaterials and interfaces Abbreviated Journal J Phys Chem C
Volume 115 Issue 35 Pages 17523-17532
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000294386000037 Publication Date 2011-08-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-7447;1932-7455; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.536 Times cited 9 Open Access
Notes Approved Most recent IF: 4.536; 2011 IF: 4.805
Call Number UA @ lucian @ c:irua:91714 Serial 1980
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Author Zhang, Q.-Z.; Tinck, S.; de Marneffe, J.-F.; Zhang, L.; Bogaerts, A.
Title (down) Mechanisms for plasma cryogenic etching of porous materials Type A1 Journal article
Year 2017 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 111 Issue 17 Pages 173104
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials. We explain how the damage occurs in the porous material during plasma etching for a wide range of chuck temperatures and the responsible mechanism for plasma damage-free etching at cryogenic temperature, by a combination of experiments and numerical modeling.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000413863400032 Publication Date 2017-10-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 2 Open Access OpenAccess
Notes We acknowledge the support from Marie Skłodowska- Curie actions (Grant Agreement-702604). This work was carried out in part using the Turing HPC infrastructure at the CalcUA core facility of Universiteit Antwerpen, a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI), and the University of Antwerp. L. Zhang and J.-F. de Marneffe acknowledge Dr. M. Cooke and A. Goodyear from Oxford Instruments Plasma Technology for processing the samples at their Yatton facility in the United Kingdom. Approved Most recent IF: 3.411
Call Number PLASMANT @ plasmant @c:irua:147022 Serial 4762
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Author Mahieu, S.; Ghekiere, P.; de Winter, G.; Heirwegh, S.; Depla, D.; de Gryse, R.; Lebedev, O.I.; Van Tendeloo, G.
Title (down) Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers Type A1 Journal article
Year 2005 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 279 Issue Pages 100-109
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000229348400015 Publication Date 2005-03-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 41 Open Access
Notes Approved Most recent IF: 1.751; 2005 IF: 1.681
Call Number UA @ lucian @ c:irua:54788 Serial 1979
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Author Hoffman, B.M.; Lukoyanov, D.; Yang, Z.-Y.; Dean, D.R.; Seefeldt, L.C.
Title (down) Mechanism of Nitrogen Fixation by Nitrogenase: The Next Stage Type A1 Journal Article
Year 2014 Publication Chemical Reviews Abbreviated Journal Chem. Rev.
Volume 114 Issue 8 Pages 4041-4062
Keywords A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Abstract Ammonia is a crucial nutrient used for plant growth and as a building block in pharmaceutical and chemical industry, produced via nitrogen fixation of the ubiquitous atmospheric N2. Current industrial ammonia production relies heavily on fossil resources, but a lot of work is put into developing non-fossil based pathways. Among these is the use of nonequilibrium plasma. In this work, we investigated water vapor as H source for nitrogen fixation into NH3 by non-equilibrium plasma. The highest selectivity towards NH3 was observed with low amounts of added H2O vapor, but the highest production rate was reached at high H2O vapor.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 2014-04-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0009-2665 ISBN Additional Links
Impact Factor Times cited Open Access
Notes We would like to thank Sylvia Dewilde (Department of Biomedical Sciences) for providing analytical equipment. Approved no
Call Number PLASMANT @ plasmant @ Serial 6337
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Author Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.;
Title (down) Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors Type A1 Journal article
Year 2006 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 89 Issue 20 Pages Artn 201908
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000242100200030 Publication Date 2006-11-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 15 Open Access
Notes Iap V-1; Fwo Approved Most recent IF: 3.411; 2006 IF: 3.977
Call Number UA @ lucian @ c:irua:61919 Serial 1978
Permanent link to this record
 
 
Author Attri, P.; Yusupov, M.; Park, J.H.; Lingamdinne, L.P.; Koduru, J.R.; Shiratani, M.; Choi, E.H.; Bogaerts, A.
Title (down) Mechanism and comparison of needle-type non-thermal direct and indirect atmospheric pressure plasma jets on the degradation of dyes Type A1 Journal article
Year 2016 Publication Scientific reports Abbreviated Journal Sci Rep-Uk
Volume 6 Issue 6 Pages 34419
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Purified water supply for human use, agriculture and industry is the major global priority nowadays. The advanced oxidation process based on atmospheric pressure non-thermal plasma (NTP) has been used for purification of wastewater, although the underlying mechanisms of degradation of organic pollutants are still unknown. In this study we employ two needle-type atmospheric pressure non-thermal plasma jets, i.e., indirect (ID-APPJ) and direct (D-APPJ) jets operating at Ar feed gas, for the treatment of methylene blue, methyl orange and congo red dyes, for two different times (i.e., 20 min and 30 min). Specifically, we study the decolorization/degradation of all three dyes using the above mentioned plasma sources, by means of UV-Vis spectroscopy, HPLC and a density meter. We also employ mass spectroscopy to verify whether only decolorization or also degradation takes place after treatment of the dyes by the NTP jets. Additionally, we analyze the interaction of OH radicals with all three dyes using reactive molecular dynamics simulations, based on the density functional-tight binding method. This investigation represents the first report on the degradation of these three different dyes by two types of NTP setups, analyzed by various methods, and based on both experimental and computational studies.
Address Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp, Belgium
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Wos 000385172300001 Publication Date 2016-10-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.259 Times cited 23 Open Access
Notes We gratefully acknowledge the grant received from the SRC program of the National Research Foundation of Korea (NRF), funded by the Korean Government (MEST) (No. 20100029418). PA is thankful to FY 2015 Japan Society for the Promotion of Science (JSPS) invitation fellowship. This work was partly supported by MEXT KAKENHI Grant Number 24108009 and JSPS KAKENHI Grant Number JP16H03895. M. Y. gratefully acknowledges financial support from the Research Foundation – Flanders (FWO), grant number 1200216N. The computational work was carried out using the Turing HPC infrastructure at the CalcUA core facility of the Universiteit Antwerpen (UA), a division of the Flemish Supercomputer Center VSC, funded by the Hercules Foundation, the Flemish Government (department EWI) and the UA. Approved Most recent IF: 4.259
Call Number PLASMANT @ plasmant @ c:irua:135847 Serial 4283
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Author Zaghi, A.E.; Buffière, M.; Brammertz, G.; Batuk, M.; Lenaers, N.; Kniknie, B.; Hadermann, J.; Meuris, M.; Poortmans, J.; Vleugels, J.
Title (down) Mechanical synthesis of high purity Cu-In-Se alloy nanopowder as precursor for printed CISe thin film solar cells Type A1 Journal article
Year 2014 Publication Advanced powder technology Abbreviated Journal Adv Powder Technol
Volume 25 Issue 4 Pages 1254-1261
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Mechanical alloying and ball milling are low cost, up-scalable techniques for the preparation of high purity chalcogenide nanopowders to be used as precursor material for printing thin film solar cells. In this study, high purity copper indium selenium (Cu-In-Se) alloy nanopowders with 20-200 nm particle size were synthesized from macroscopic elemental Cu, In and Se powders via mechanical alloying and planetary ball milling. The particle size distribution, morphology, composition, and purity level of the synthesized Cu-In-Se alloy nanopowders were investigated. Thin Cu-In-Se alloy nanopowder ink coatings, deposited on Mo-coated glass substrates by doctor blading, were converted into a CuInSe2 semiconductor film by selenization heat treatment in Se vapor. The CuInSe2 film showed semiconducting band gap around 1 eV measured by photoluminescence spectroscopy. CuInSe2 absorber layer based thin film solar cell devices were fabricated to assess their performance. The solar cell device showed a total efficiency of 4.8%, as measured on 0.25 cm(2) area cell. (c) 2014 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Zeist Editor
Language Wos 000341871700015 Publication Date 2014-03-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-8831; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.659 Times cited 10 Open Access
Notes Approved Most recent IF: 2.659; 2014 IF: 2.638
Call Number UA @ lucian @ c:irua:119896 Serial 1977
Permanent link to this record
 
 
Author Li, Y.J.; Wang, J.J.; Ye, J.C.; Ke, X.X.; Gou, G.Y.; Wei, Y.; Xue, F.; Wang, J.; Wang, C.S.; Peng, R.C.; Deng, X.L.; Yang, Y.; Ren, X.B.; Chen, L.Q.; Nan, C.W.; Zhang, J.X.;
Title (down) Mechanical switching of nanoscale multiferroic phase boundaries Type A1 Journal article
Year 2015 Publication Advanced functional materials Abbreviated Journal Adv Funct Mater
Volume 25 Issue 25 Pages 3405-3413
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO3 with a phase mixture, where the material can be reversibly transformed between the soft tetragonal-like and the hard rhombohedral-like structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180 degrees rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.
Address
Corporate Author Thesis
Publisher Place of Publication Weinheim Editor
Language Wos 000355992600017 Publication Date 2015-04-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1616-301X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.124 Times cited 23 Open Access
Notes Approved Most recent IF: 12.124; 2015 IF: 11.805
Call Number c:irua:126430 Serial 1976
Permanent link to this record
 
 
Author Salje, E.K.H.; Zhang, H.; Idrissi, H.; Schryvers, D.; Carpenter, M.A.; Moya, X.; Planes, A.
Title (down) Mechanical resonance of the austenite/martensite interface and the pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79 Type A1 Journal article
Year 2009 Publication Physical review: B: condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 80 Issue 13 Pages 134114,1-1134114,8
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246 and 232 K under heating and cooling, respectively. The phase fronts between the austenite and martensite regions of the sample are weakly mobile with a power-law resonance under external stress fields. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and cannot be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was studied by dynamical mechanical analysis (DMA) and resonant ultrasound spectroscopy. The remnant strain, storage modulus, and internal friction were recorded simultaneously for different applied forces in DMA. With increasing forces, the remnant strain increases monotonously while the internal friction peak height shows a minimum at 300 mN. Transmission electron microscopy shows that the pinning is generated by dislocations which are inherited from the austenite phase.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000271351300033 Publication Date 2009-10-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 38 Open Access
Notes Multimat Approved Most recent IF: 3.836; 2009 IF: 3.475
Call Number UA @ lucian @ c:irua:78542 Serial 1975
Permanent link to this record
 
 
Author Kang, J.; Sahin, H.; Peeters, F.M.
Title (down) Mechanical properties of monolayer sulphides : a comparative study between MoS2, HfS2 and TiS3 Type A1 Journal article
Year 2015 Publication Physical chemistry, chemical physics Abbreviated Journal Phys Chem Chem Phys
Volume 17 Issue 17 Pages 27742-27749
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The in-plane stiffness (C), Poisson's ratio (nu), Young's modulus and ultimate strength (sigma) along two different crystallographic orientations are calculated for the single layer crystals: MoS2, HfS2 and TiS3 in 1H, 1T and monoclinic phases. We find that MoS2 and HfS2 have isotropic in-plane stiffnesses of 124.24 N m(-1) and 79.86 N m(-1), respectively. While for TiS3 the in-plane stiffness is highly anisotropic due to its monoclinic structure, with C-x = 83.33 N m(-1) and C-y = 133.56 N m(-1) (x and y are parallel to its longer and shorter in-plane lattice vectors.). HfS2 which is in the 1T phase has the smallest anisotropy in its ultimate strength, whereas TiS3 in the monoclinic phase has the largest. Along the armchair direction MoS2 has the largest sigma of 23.48 GPa, whereas along y TiS3 has the largest sigma of 18.32 GPa. We have further analyzed the band gap response of these materials under uniaxial tensile strain, and find that they exhibit different behavior. Along both armchair and zigzag directions, the band gap of MoS2 (HfS2) decreases (increases) as strain increases, and the response is almost isotropic. For TiS3, the band gap decreases when strain is along x, while if strain is along y, the band gap increases first and then decreases beyond a threshold strain value. The different characteristics observed in these sulphides with different structures shed light on the relationship between the structure and properties, which is useful for applications in nanotechnology.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000363193800055 Publication Date 2015-09-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1463-9076 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.123 Times cited 83 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem foundation of the Flemish government. Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure), and HPC infrastructure of the University of Antwerp (CalcUA) a division of the Flemish Super-computer Center (VSC), which is funded by the Hercules foundation. H.S. is supported by a FWO Pegasus-Long Marie Curie Fellowship, and J.K. by a FWO Pegasus-Short Marie Curie Fellowship. ; Approved Most recent IF: 4.123; 2015 IF: 4.493
Call Number UA @ lucian @ c:irua:129478 Serial 4204
Permanent link to this record
 
 
Author Yagmurcukardes, M.; Senger, R.T.; Peeters, F.M.; Sahin, H.
Title (down) Mechanical properties of monolayer GaS and GaSe crystals Type A1 Journal article
Year 2016 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 94 Issue 94 Pages 245407
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The mechanical properties of monolayer GaS and GaSe crystals are investigated in terms of their elastic constants: in-plane stiffness (C), Poisson ratio (nu), and ultimate strength (sigma(U)) by means of first-principles calculations. The calculated elastic constants are compared with those of graphene and monolayer MoS2. Our results indicate that monolayer GaS is a stiffer material than monolayer GaSe crystals due to the more ionic character of the Ga-S bonds than the Ga-Se bonds. Although their Poisson ratio values are very close to each other, 0.26 and 0.25 for GaS and GaSe, respectively, monolayer GaS is a stronger material than monolayer GaSe due to its slightly higher sU value. However, GaS and GaSe crystals are found to be more ductile and flexible materials than graphene and MoS2. We have also analyzed the band-gap response of GaS and GaSe monolayers to biaxial tensile strain and predicted a semiconductor-metal crossover after 17% and 14% applied strain, respectively, for monolayer GaS and GaSe. In addition, we investigated how the mechanical properties are affected by charging. We found that the flexibility of single layer GaS and GaSe displays a sharp increase under 0.1e/cell charging due to the repulsive interactions between extra charges located on chalcogen atoms. These charging-controllable mechanical properties of single layers of GaS and GaSe can be of potential use for electromechanical applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000389503400008 Publication Date 2016-12-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950;2469-9969; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 108 Open Access
Notes ; Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. acknowledges support from Bilim Akademisi-The Science Academy, Turkey under the BAGEP program. R.T.S. acknowledges the support from TUBITAK through project 114F397. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:139229 Serial 4356
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Author van der Rest, A.; Idrissi, H.; Henry, F.; Favache, A.; Schryvers, D.; Proost, J.; Raskin, J.-P.; Van Overmeere, Q.; Pardoen, T.
Title (down) Mechanical behavior of ultrathin sputter deposited porous amorphous Al2O3 films Type A1 Journal article
Year 2017 Publication Acta materialia Abbreviated Journal Acta Mater
Volume 125 Issue 125 Pages 27-37
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The determination of the mechanical properties of porous amorphous Al2O3 thin films is essential to address reliability issues in wear-resistant, optical and electronic coating applications. Testing the mechanical properties of Al2O3 films thinner than 200 nm is challenging, and the link between the mechanical behavior and the microstructure of such films is largely unknown. Herein, we report on the elastic and viscoplastic mechanical properties of amorphous Al2O3 thin films synthesized by reactive magnetron sputtering using a combination of internal stress, nanoindentation, and on-chip uniaxial tensile testing, together with mechanical homogenization models to separate the effect of porosity from intrinsic variations of the response of the sound material. The porosity is made of voids with 2e30 nm diameter. The Young's modulus and hardness of the films decrease by a factor of two when the deposition pressure increases from 1.2 to 8 mTorr. The contribution of porosity was found to be small, and a change in the atomic structure of the amorphous Al2O3 matrix is hypothesized to be the main contributing factor. The activation volume associated to the viscoplastic deformation mechanism is around 100 Å3. Differences in the atomic structure of the films could not be revealed by electron diffraction, pointing to a minute effect of atomic arrangement on the elastic properties.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000394201500003 Publication Date 2016-12-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1359-6454 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.301 Times cited 5 Open Access OpenAccess
Notes This work has been funded by the Belgian Science Policy through the IAP 7/21 project. The support of the ‘Fonds Belge pour la Recherche dans l’Industrie et l’Agriculture (FRIA)’ for A.v.d.R. is also gratefully acknowledged, as well as the support of FNRS through the grant PDR T.0122.13 “Mecano”. Approved Most recent IF: 5.301
Call Number EMAT @ emat @ c:irua:138990 Serial 4330
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Author Çakir, D.; Peeters, F.M.; Sevik, C.
Title (down) Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W; X = O, S, Se, Te) monolayers : a comparative study Type A1 Journal article
Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 104 Issue 20 Pages 203110
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Using density functional theory, we obtain the mechanical and thermal properties of MX2 monolayers (where M = Cr, Mo, W and X = O, S, Se, Te). The C-centered phonon frequencies (i.e., A(1), A(2)'', E ', and E ''), relative frequency values of A(1), and E ' modes, and mechanical properties (i.e., elastic constants, Young modulus, and Poisson's ratio) display a strong dependence on the type of metal and chalcogenide atoms. In each chalcogenide (metal) group, transition-metal dichalcogenides (TMDCs) with W (O) atom are found to be much stiffer. Consistent with their stability, the thermal expansion of lattice constants for TMDCs with O (Te) is much slower (faster). Furthermore, in a heterostructure of these materials, the difference of the thermal expansion of lattice constants between the individual components becomes quite tiny over the whole temperature range. The calculated mechanical and thermal properties show that TMDCs are promising materials for heterostructures. (C) 2014 AIP Publishing LLC.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000337140800063 Publication Date 2014-05-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951;1077-3118; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 130 Open Access
Notes ; Cem Sevik acknowledges the support from Scientific and Technological Research Council of Turkey (TUBITAK-113F096) and Anadolu University (BAP-1306F261 and -1306F281) to this project. We would also like to thank the ULAKBIM High Performance and Grid Computing Center for a generous time allocation for our projects. D. C. was supported by a FWO Pegasus-short Marie Curie Fellowship. Part of this work was supported by the Methusalem foundation of the Flemish Government. ; Approved Most recent IF: 3.411; 2014 IF: 3.302
Call Number UA @ lucian @ c:irua:118379 Serial 1974
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Author Hervieu, M.; Michel, C.; Martin, C.; Huvé, M.; Van Tendeloo, G.; Maignan, A.; Pelloquin, D.; Goutenoire, F.; Raveau, B.
Title (down) Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à haute Tc Type A1 Journal article
Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal
Volume 4 Issue Pages 2057-2067
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor
Language Wos A1994PT17900002 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4320 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10041 Serial 1973
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Author Guzzinati, G.; Clark, L.; Béché, A.; Verbeeck, J.
Title (down) Measuring the orbital angular momentum of electron beams Type A1 Journal article
Year 2014 Publication Physical review : A : atomic, molecular and optical physics Abbreviated Journal Phys Rev A
Volume 89 Issue Pages 025803
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The recent demonstration of electron vortex beams has opened up the new possibility of studying orbital angular momentum (OAM) in the interaction between electron beams and matter. To this aim, methods to analyze the OAM of an electron beam are fundamentally important and a necessary next step. We demonstrate the measurement of electron beam OAM through a variety of techniques. The use of forked holographic masks, diffraction from geometric apertures, and diffraction from a knife edge and the application of an astigmatic lens are all experimentally demonstrated. The viability and limitations of each are discussed with supporting numerical simulations.
Address
Corporate Author Thesis
Publisher Place of Publication Lancaster, Pa Editor
Language Wos 000332224100014 Publication Date 2014-02-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1050-2947;1094-1622; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.925 Times cited 42 Open Access
Notes Vortex; FP7; Countatoms; ESTEEM2; esteem2jra3 ECASJO; Approved Most recent IF: 2.925; 2014 IF: 2.808
Call Number UA @ lucian @ c:irua:114577UA @ admin @ c:irua:114577 Serial 1972
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Author Kirilenko, D.A.; Brunkov, P.N.
Title (down) Measuring the height-to-height correlation function of corrugation in suspended graphene Type A1 Journal article
Year 2016 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 165 Issue 165 Pages 1-7
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract Nanocorrugation of 2D crystals is an important phenomenon since it affects their electronic and mechanical properties. The corrugation may have various sources; one of them is flexural phonons that, in particular, are responsible for the thermal conductivity of graphene. A study of corrugation of just the suspended graphene can reveal much of valuable information on the physics of this complicated phenomenon. At the same time, the suspended crystal nanorelief can hardly be measured directly because of high flexibility of the 2D crystal. Moreover, the relief portion related to rapid out-of-plane oscillations (flexural phonons) is also inaccessible by such measurements. Here we present a technique for measuring the Fourier components of the height-height correlation function H(q) of suspended graphene which includes the effect of flexural phonons. The technique is based on the analysis of electron diffraction patterns. The H(q) is measured in the range of wavevectors q approximately 0.4-4.5nm(-1). At the upper limit of this range H(q) does follow the T/kappaq(4) law. So, we measured the value of suspended graphene bending rigidity kappa=1.2+/-0.4eV at ambient temperature T approximately 300K. At intermediate wave vectors, H(q) follows a slightly weaker exponent than theoretically predicted q(-3.15) but is closer to the results of the molecular dynamics simulation. At low wave vectors, the dependence becomes even weaker, which may be a sign of influence of charge carriers on the dynamics of undulations longer than 10nm. The technique presented can be used for studying physics of flexural phonons in other 2D materials.
Address Ioffe Institute, Politekhnicheskaya ul. 26, 194021 St-Petersburg, Russia; ITMO University, Kronverksky pr. 49, 197101 St. Petersburg, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Wos 000375946200001 Publication Date 2016-03-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991 ISBN Additional Links
Impact Factor 2.843 Times cited 3 Open Access
Notes D.K. thanks the RFBR (Grant no. 16-32-60165) for the partial support of this research. The work was carried out in part at the Joint Research Center “Material Science and Characterization in Advanced Technologies” (St-Petersburg, Russia) under the financial support from the Ministry of Education and Science of the Russian Federation (Agreement 14.621.21.0007, 04.12.2014, id RFMEFI62114X0007, the use of the Jeol JEM-2100F microscope) and at EMAT, Universiteit Antwerpen (Antwerpen, Belgium), (the use of the FEI Tecnai G2 microscope). Approved Most recent IF: 2.843
Call Number EMAT @ emat @ Serial 4124
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Author Kirilenko, D.A.; Dideykin, A.T.; Van Tendeloo, G.
Title (down) Measuring the corrugation amplitude of suspended and supported graphene Type A1 Journal article
Year 2011 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B
Volume 84 Issue 23 Pages 235417-235417,5
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Nanoscale corrugation is a fundamental property of graphene arising from its low-dimensional nature. It places a fundamental limit to the conductivity of graphene and influences its properties. However the degree of the influence of the corrugation has not been well established because of the little knowledge about its spectrum in suspended graphene. We present a transmission electron microscopy technique that enables us to measure the average corrugation height and length. We applied the technique also to measure the temperature dependence of the corrugation. The difference in corrugation between suspended and supported graphene has been illustrated.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000297764700003 Publication Date 2011-12-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 31 Open Access
Notes Approved Most recent IF: 3.836; 2011 IF: 3.691
Call Number UA @ lucian @ c:irua:93629 Serial 1971
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Author Potapov, P.L.; Schryvers, D.
Title (down) Measuring the absolute position of EELS ionisation edges in a TEM Type A1 Journal article
Year 2004 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 99 Issue Pages 73-85
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000220804700005 Publication Date 2003-08-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.843 Times cited 29 Open Access
Notes Approved Most recent IF: 2.843; 2004 IF: 2.215
Call Number UA @ lucian @ c:irua:48781 Serial 1970
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Author Schryvers, D.; Tirry, W.; Yang, Z.Q.;
Title (down) Measuring strain fields and concentration gradients around Ni4Ti3 precipitates Type A1 Journal article
Year 2006 Publication Materials science and engineering A: structural materials properties microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct
Volume 438 Issue Pages 485-488
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000242900900105 Publication Date 2006-07-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.094 Times cited 35 Open Access
Notes Goa Approved Most recent IF: 3.094; 2006 IF: 1.490
Call Number UA @ lucian @ c:irua:62329 Serial 1969
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Author van der Burgt, M.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Foxon, C.T.
Title (down) Measuring quantum Hall resistors in pulsed magnetic fields Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 750-753
Keywords P3 Proceeding; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher World Scientific Place of Publication Singapore Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:12207 Serial 1968
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Author Biermans, E.; Molina, L.; Batenburg, K.J.; Bals, S.; Van Tendeloo, G.
Title (down) Measuring porosity at the nanoscale by quantitative electron tomography Type A1 Journal article
Year 2010 Publication Nano letters Abbreviated Journal Nano Lett
Volume 10 Issue 12 Pages 5014-5019
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract Quantitative electron tomography is proposed to characterize porous materials at a nanoscale. To achieve reliable three-dimensional (3D) quantitative information, the influence of missing wedge artifacts and segmentation methods is investigated. We are presenting the Discrete Algebraic Reconstruction Algorithm as the most adequate tomography method to measure porosity at the nanoscale. It provides accurate 3D quantitative information, regardless the presence of a missing wedge. As an example, we applied our approach to nanovoids in La2Zr2O7 thin films.
Address
Corporate Author Thesis
Publisher Place of Publication Washington Editor
Language Wos 000284990900040 Publication Date 2010-11-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1530-6984;1530-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.712 Times cited 79 Open Access
Notes Esteem 026019 Approved Most recent IF: 12.712; 2010 IF: 12.219
Call Number UA @ lucian @ c:irua:87658 Serial 1967
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Author Felten, A.; Gillon, X.; Gulas, M.; Pireaux, J.-J.; Ke, X.; Van Tendeloo, G.; Bittencourt, C.; Najafi, E.; Hitchcock, A.P.
Title (down) Measuring point defect density in individual carbon nanotubes using polarization-dependent X-ray microscopy Type A1 Journal article
Year 2010 Publication ACS nano Abbreviated Journal Acs Nano
Volume 4 Issue 8 Pages 4431-4436
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The presence of defects in carbon nanotubes strongly modifies their electrical, mechanical, and chemical properties. It was long thought undesirable, but recent experiments have shown that introduction of structural defects using ion or electron irradiation can lead to novel nanodevices. We demonstrate a method for detecting and quantifying point defect density in individual carbon nanotubes (CNTs) based on measuring the polarization dependence (linear dichroism) of the C 1s → π* transition at specific locations along individual CNTs with a scanning transmission X-ray microscope (STXM). We show that STXM can be used to probe defect density in individual CNTs with high spatial resolution. The quantitative relationship between ion dose, nanotube diameter, and defect density was explored by purposely irradiating selected sections of nanotubes with kiloelectronvolt (keV) Ga+ ions. Our results establish polarization-dependent X-ray microscopy as a new and very powerful characterization technique for carbon nanotubes and other anisotropic nanostructures.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000281052700014 Publication Date 2010-07-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1936-0851;1936-086X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 13.942 Times cited 26 Open Access
Notes Approved Most recent IF: 13.942; 2010 IF: 9.865
Call Number UA @ lucian @ c:irua:84734 Serial 1966
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Author Goris, B.; de Beenhouwer, J.; de Backer, A.; Zanaga, D.; Batenburg, K.J.; Sánchez-Iglesias, A.; Liz-Marzán, L.M.; Van Aert, S.; Bals, S.; Sijbers, J.; Van Tendeloo, G.
Title (down) Measuring lattice strain in three dimensions through electron microscopy Type A1 Journal article
Year 2015 Publication Nano letters Abbreviated Journal Nano Lett
Volume 15 Issue 15 Pages 6996-7001
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Vision lab
Abstract The three-dimensional (3D) atomic structure of nanomaterials, including strain, is crucial to understand their properties. Here, we investigate lattice strain in Au nanodecahedra using electron tomography. Although different electron tomography techniques enabled 3D characterizations of nanostructures at the atomic level, a reliable determination of lattice strain is not straightforward. We therefore propose a novel model-based approach from which atomic coordinates are measured. Our findings demonstrate the importance of investigating lattice strain in 3D.
Address
Corporate Author Thesis
Publisher Place of Publication Washington Editor
Language Wos 000363003100108 Publication Date 2015-09-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1530-6984;1530-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 12.712 Times cited 87 Open Access OpenAccess
Notes Fwo; 335078 Colouratom; 267867 Plasmaquo; 312483 Esteem2; 262348 Esmi; esteem2jra4; ECASSara; (ROMEO:white; preprint:; postprint:restricted 12 months embargo; pdfversion:cannot); Approved Most recent IF: 12.712; 2015 IF: 13.592
Call Number c:irua:127639 c:irua:127639 Serial 1965
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Author Rosenberg, E.; De Santis, F.; Kontozova-Deutsch, V.; Odlyha, M.; Van Grieken, R.; Vichi, F.
Title (down) Measuring gaseous and particulate pollutants: instruments and instrumental problems Type H2 Book chapter
Year 2010 Publication Abbreviated Journal
Volume Issue Pages 115-146 T2 - Basic environmental mechanisms: affec
Keywords H2 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-88-404-4334-8 Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:83559 Serial 8213
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Author Van Passel, S.; Nevens, F.; Mathijs, E.; Van Huylenbroeck, G.
Title (down) Measuring farm sustainability and explaining differences in sustainable efficiency Type A1 Journal article
Year 2007 Publication Ecological Economics Abbreviated Journal Ecol Econ
Volume 62 Issue 1 Pages 149-161
Keywords A1 Journal article; Economics
Abstract A major objective of European agricultural policy is to have a sustainable and efficient farming sector that is applying environmentally-friendly production methods. Policy makers aim to combine a strong economic performance and a sustainable use of natural resources. Therefore, it is important to measure and to assess farm sustainability. For a large dataset of Flemish dairy farms, a valuation method that is based on the concept of opportunity costs is used to calculate and analyze differences among the sample farms with respect to the creation of sustainable value. But more important than measuring the creation of sustainable value is to analyze differences in sustainable efficiency. Therefore, sustainable efficiency measures are calculated and differences in sustainable efficiency are explained. Using panel data, an effect model captures the determinants of sustainable efficiency of the studied farms. The empirical model shows that, in general, larger farms have a higher sustainable efficiency. Also farmer's age and dependency on support payments proved to be determining characteristics for observed differences in sustainable efficiency.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000246021800015 Publication Date 2006-07-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-8009; 1873-6106 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.965 Times cited 101 Open Access
Notes Approved Most recent IF: 2.965; 2007 IF: 1.549
Call Number UA @ admin @ c:irua:136767 Serial 6226
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Author De wael, A.; De Backer, A.; Jones, L.; Varambhia, A.; Nellist, P.D.; Van Aert, S.
Title (down) Measuring Dynamic Structural Changes of Nanoparticles at the Atomic Scale Using Scanning Transmission Electron Microscopy Type A1 Journal article
Year 2020 Publication Physical Review Letters Abbreviated Journal Phys Rev Lett
Volume 124 Issue 10 Pages 106105
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We propose a new method to measure atomic scale dynamics of nanoparticles from experimental high-resolution annular dark field scanning transmission electron microscopy images. By using the so-called hidden Markov model, which explicitly models the possibility of structural changes, the number of atoms in each atomic column can be quantified over time. This newly proposed method outperforms the current atom-counting procedure and enables the determination of the probabilities and cross sections for surface diffusion. This method is therefore of great importance for revealing and quantifying the atomic structure when it evolves over time via adatom dynamics, surface diffusion, beam effects, or during in situ experiments.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000519718100015 Publication Date 2020-03-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-9007 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 8.6 Times cited Open Access OpenAccess
Notes This project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (Grant Agreement No. 770887 and No. 823717 ESTEEM3). The authors acknowledge financial support from the Research Foundation Flanders (FWO, Belgium) through grants to A.D.w. and A.D.B. and projects G.0502.18N and EOS 30489208. L.J. acknowledges the SFI AMBER Centre for support. A.V. and P.D.N. acknowledge the UK Engineering and Physical Sciences Council (EPSRC) for support (EP/K040375/1 and 1772738). A.V. also acknowledges Johnson-Matthey for support. We would like to thank Brian Theobald and Jonathan Sharman from JMTC Sonning for provision of the Pt sample. Approved Most recent IF: 8.6; 2020 IF: 8.462
Call Number EMAT @ emat @c:irua:167148 Serial 6347
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Author Spiller, M.
Title (down) Measuring adaptive capacity of urban wastewater infrastructure : change impact and change propagation Type A1 Journal article
Year 2017 Publication The science of the total environment Abbreviated Journal
Volume 601-602 Issue Pages 571-579
Keywords A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
Abstract The ability of urban wastewater systems to adapt and transform as a response to change is an integral part of sustainable development. This requires technology and infrastructure that can be adapted to new operational challenges. In this study the adaptive capacity of urban wastewater systems is evaluated by assessing the interdependencies between system components. In interdependent and therefore tightly coupled systems, changes to one systems component will require alteration elsewhere in the system, therefore impairing the capacity of these systems to be changed. The aim of this paper is to develop a methodology to evaluate the adaptive capacity of urban wastewater systems by assessing how change drivers and innovation affect existing wastewater technology and infrastructure. The methodology comprises 7 steps and applies a change impact table and a design structure matrix that are completed by experts during workshops. Change impact tables quantify where change drivers, such as energy neutrality and resource recovery, require innovation in a system. The design structure matrix is a tool to quantify emerging changes that are a result of the innovation. The method is applied for the change driver of energy neutrality and shown for two innovations: a decentralised upflow anaerobic sludge blanket reactor followed by an anammox process and a conventional activated sludge treatment with enhanced chemical precipitation and high temperature-high pressure hydrolysis. The results show that the energy neutrality of wastewater systems can be address by either innovation in the decentralised or centralised treatment. The quantification of the emerging changes for both innovations indicates that the decentralised treatment is more disruptive, or in other words, the system needs to undergo more adaptation. It is concluded that the change impact and change propagation method can be used to characterise and quantify the technological or infrastructural transformations. In addition, it provides insight into the stakeholders affected by change.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000406294900057 Publication Date 2017-05-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0048-9697; 1879-1026 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:143926 Serial 8212
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Author Alföldy, B.; Lööv, J.B.; Lagler, F.; Bencs, L.; Horemans, B.; Van Grieken, R.; et al.
Title (down) Measurements of air pollution emission factors for marine transportation in SECA Type A1 Journal article
Year 2013 Publication Atmospheric measurement techniques Abbreviated Journal
Volume 6 Issue 7 Pages 1777-1791
Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract The chemical composition of the plumes of seagoing ships was measured during a two week long measurement campaign in the port of Rotterdam, Hoek van Holland The Netherlands, in September 2009. Altogether, 497 ships were monitored and a statistical evaluation of emission factors (g kg−1 fuel) was provided. The concerned main atmospheric components were SO2, NO2, NOx and the aerosol particle number. In addition, the elemental and water-soluble ionic composition of the emitted particulate matter was determined. Emission factors were expressed as a function of ship type, power and crankshaft rotational speed. The average SO2 emission factor was found to be roughly half of what is allowed in sulphur emission control areas (16 vs. 30 g kg−1 fuel), and exceedances of this limit were rarely registered. A significant linear relationship was observed between the SO2 and particle number emission factors. The intercept of the regression line, 4.8 × 1015 (kg fuel)−1, gives the average number of particles formed during the burning of 1 kg zero sulphur content fuel, while the slope, 2 × 1018, provides the average number of particles formed with 1 kg sulphur burnt with the fuel. Water-soluble ionic composition analysis of the aerosol samples from the plumes showed that ~144 g of particulate sulphate was emitted from 1 kg sulphur burnt with the fuel. The mass median diameter of sulphate particles estimated from the measurements was ~42 nm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000322546800014 Publication Date 2013-07-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1867-1381; 1867-8548 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ admin @ c:irua:109265 Serial 8211
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