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“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
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“Electron mobility in Si delta doped GaAs”. Koenraad PM, van de Stadt AFW, Hai GQ, Shi JM, Vansant P, Peeters FM, Devreese JT, Perenboom JAAJ, Wolter JH, Physica: B : condensed matter 211, 462 (1995). http://doi.org/10.1016/0921-4526(94)01094-H
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.319
Times cited: 9
DOI: 10.1016/0921-4526(94)01094-H
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“Empirical evaluation of metal deposition for the analysis of organic compounds with static secondary ion mass spectrometry (S-SIMS)”. de Mondt R, Adriaensen L, Vangaever F, Lenaerts J, van Vaeck L, Gijbels R, Applied surface science 252, 6652 (2006). http://doi.org/10.1016/j.apsusc.2006.02.110
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.387
Times cited: 9
DOI: 10.1016/j.apsusc.2006.02.110
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“Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields”. Bogaerts R, Herlach F, de Keyser A, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Physical review : B : condensed matter and materials physics 53, 15951 (1996). http://doi.org/10.1103/PhysRevB.53.15951
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 9
DOI: 10.1103/PhysRevB.53.15951
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“Experimental study of the energy band structure of Sc1-xErxAs layers in pulsed magnetic fields”. Bogaerts R, van Esch A, van Bockstal L, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Allen SJ, Physica: B : condensed matter 184, 232 (1993). http://doi.org/10.1016/0921-4526(93)90356-B
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 9
DOI: 10.1016/0921-4526(93)90356-B
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“Fabrication and characterization of functionally graded Ni-Ti multilayer thin films”. Tian H, Schryvers D, Mohanchandra KP, Carman GP, van Humbeeck J, Functional materials letters 2, 61 (2009). http://doi.org/10.1142/S1793604709000570
Abstract: A functionally graded multilayer NiTi thin film was deposited on a SiO2/Si substrate by d.c. sputtering using a ramped heated NiTi alloy target. The stand-alone films were crystallized at 500°C in vacuum better than 10-7 Torr. Transmission electron microscopy micrographs taken along the film cross section show two distinct regions, thin and thick, with weak R and B2 phases, respectively. The film compositions along the thickness were measured and quantified using the standard-less EELSMODEL method. The film deposited during the initial thermal ramp (thin regions) displays an average of 54 at.% Ni while the film deposited at a more elevated target temperature (thick regions) shows about 51 at.% Ni.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.234
Times cited: 9
DOI: 10.1142/S1793604709000570
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“Fluid simulation of the bias effect in inductive/capacitive discharges”. Zhang Y-R, Gao F, Li X-C, Bogaerts A, Wang Y-N, Journal of vacuum science and technology: A: vacuum surfaces and films 33, 061303 (2015). http://doi.org/10.1116/1.4928033
Abstract: Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0300V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120V at 2MHz and 90V at 27.12 MHz.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.374
Times cited: 9
DOI: 10.1116/1.4928033
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“The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study”. Frangis N, Stoemenos J, van Landuyt J, Nejim A, Hemment PLF, Journal of crystal growth 181, 218 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 9
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“Generic ordering of structural transitions in quasi-one-dimensional Wigner crystals”. Galvan-Moya JE, Misko VR, Peeters FM, Physical review : B : condensed matter and materials physics 90, 094111 (2014). http://doi.org/10.1103/PhysRevB.90.094111
Abstract: We investigate the dependence of the structural phase transitions in an infinite quasi-one-dimensional system of repulsively interacting particles on the profile of the confining channel. Three different functional expressions for the confinement potential related to real experimental systems are used that can be tuned continuously from a parabolic to a hard-wall potential in order to find a thorough understanding of the ordering of the chainlike structure transitions. We resolve the long-standing issue why the most theories predicted a 1-2-4-3-4 sequence of chain configurations with increasing density, while some experiments found the 1-2-3-4 sequence.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.90.094111
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“The Hall resistivity of a two-dimensional electron gas in the presence of magnetic clusters with perpendicular magnetization”. Reijniers J, Peeters FM, Matulis A, Physica. E: Low-dimensional systems and nanostructures 6, 759 (2000). http://doi.org/10.1016/S1386-9477(99)00197-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 2.221
Times cited: 9
DOI: 10.1016/S1386-9477(99)00197-6
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“Heating mechanism in direct current superposed single-frequency and dual-frequency capacitively coupled plasmas”. Zhang Q-Z, Liu Y-X, Jiang W, Bogaerts A, Wang Y-N, Plasma sources science and technology 22, 025014 (2013). http://doi.org/10.1088/0963-0252/22/2/025014
Abstract: In this work particle-in-cell/Monte Carlo collision simulations are performed to study the heating mechanism and plasma characteristics in direct current (dc) superposed radio-frequency (RF) capacitively coupled plasmas, operated both in single-frequency (SF) and dual-frequency (DF) regimes. An RF (60/2 MHz) source is applied on the bottom electrode to sustain the discharge, and a dc source is fixed on the top electrode. The heating mechanism appears to be very different in dc superposed SF and DF discharges. When only a single source of 60 MHz is applied, the plasma bulk region is reduced by the dc source, thus the ionization rate and hence the electron density decrease with rising dc voltage. However, when a DF source of 60 and 2 MHz is applied, the electron density can increase upon addition of a dc voltage, depending on the gap length and applied dc voltage. This is explained from the spatiotemporal ionization rates in the DF discharge. In fact, a completely different behavior is observed for the ionization rate in the two half-periods of the LF source. In the first LF half-period, the situation resembles the dc superposed SF discharge, and the reduced plasma bulk region due to the negative dc bias results in a very small effective discharge area and a low ionization rate. On the other hand, in the second half-period, the negative dc bias is to some extent counteracted by the LF voltage, and the sheath close to the dc electrode becomes particularly thin. Consequently, the amplitude of the high-frequency sheath oscillations at the top electrode is largely enhanced, while the LF sheath at the bottom electrode is in its expanding phase and can thus well confine the high-energy electrons. Therefore, the ionization rate increases considerably in this second LF half-period. Furthermore, in addition to the comparison between SF and DF discharges and the effect of gap length and dc voltage, the effect of secondary electrons is examined.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.302
Times cited: 9
DOI: 10.1088/0963-0252/22/2/025014
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“Heating mode transition in a hybrid direct current/dual-frequency capacitively coupled CF4 discharge”. Zhang Q-Z, Wang Y-N, Bogaerts A, Journal of applied physics 115, 223302 (2014). http://doi.org/10.1063/1.4882297
Abstract: Computer simulations based on the particle-in-cell/Monte Carlo collision method are performed to study the plasma characteristics and especially the transition in electron heating mechanisms in a hybrid direct current (dc)/dual-frequency (DF) capacitively coupled CF 4 discharge. When applying a superposed dc voltage, the plasma density first increases, then decreases, and finally increases again, which is in good agreement with experiments. This trend can be explained by the transition between the four main heating modes, i.e., DF coupling, dc and DF coupling, dc source dominant heating, and secondary electron dominant heating.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 9
DOI: 10.1063/1.4882297
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“High magnetic ordering temperature in the perovskites Sr4-xLaxFe3ReO12 (x=0.0, 1.0, 2.0)”. Retuerto M, Li MR, Go YB, Ignatov A, Croft M, Ramanujachary KV, Herber RH, Nowik I, Hodges JP, Dachraoui W, Hadermann J, Greenblatt M;, Journal of solid state chemistry 194, 48 (2012). http://doi.org/10.1016/j.jssc.2012.06.031
Abstract: A series of perovskites Sr4−xLaxFe3ReO12 (x=0.0, 1.0, 2.0) has been prepared by wet chemistry methods. The structure analyses by powder X-ray and neutron diffraction and electron microscopy show that these compounds adopt simple perovskite structures without cation ordering over the B sites: tetragonal (I4/mcm) for x=0.0 and 1.0 and orthorhombic (Pbmn) for x=2.0. The oxidation states of the cations in the compound with x=0.0 appear to be Fe3+/4+ and Re7+ and decrease for both with La substitution as evidenced by X-ray absorption spectroscopy. All the compounds are antiferromagnetically ordered above room temperature, as demonstrated by Mössbauer spectroscopy and the magnetic structures, which were determined by powder neutron diffraction. The substitution of Sr by La strongly affects the magnetic properties with an increase of TN up to ∼750 K.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 9
DOI: 10.1016/j.jssc.2012.06.031
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“Strain engineering of the electronic properties of bilayer graphene quantum dots: Strain engineering of the electronic properties of bilayer graphene quantum dots”. Moldovan D, Peeters FM, Physica status solidi: rapid research letters 10, 39 (2015). http://doi.org/10.1002/pssr.201510228
Abstract: We study the effect of mechanical deformations on the elec- tronic properties of hexagonal flakes of bilayer graphene. The behavior of electrons induced by triaxial strain can be de- scribed by an effective pseudo-magnetic field which is homo- geneous in the center of the flake. We find that in-plane strain, applied to both layers equally, can break the layer symmetry leading to different behavior in the top and bottom layers of graphene. At low energy, just one of the layers feels
the pseudo-magnetic field: the zero-energy pseudo-Landau level is missing in the second layer, thus creating a gap be- tween the lowest non-zero levels. While the layer asymmetry is most significant at zero energy, interaction with the edges of the flake extends the effect to higher pseudo-Landau lev- els. The behavior of the top and bottom layers may be re- versed by rotating the triaxial strain by 60°.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.032
Times cited: 9
DOI: 10.1002/pssr.201510228
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“Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux”. Bogaerts A, Okhrimovskyy A, Baguer N, Gijbels R, Plasma sources science and technology 14, 191 (2005). http://doi.org/10.1088/0963-0252/14/1/021
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.302
Times cited: 9
DOI: 10.1088/0963-0252/14/1/021
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“Impact of spin-orbit coupling on the Holstein polaron”. Li Z, Covaci L, Berciu M, Baillie D, Marsiglio F, Physical review : B : condensed matter and materials physics 83, 195104 (2011). http://doi.org/10.1103/PhysRevB.83.195104
Abstract: We utilize an exact variational numerical procedure to calculate the ground state properties of a polaron in the presence of a Rashba-like spin-orbit interaction. Our results corroborate previous work performed with the momentum average approximation and with weak-coupling perturbation theory. We find that spin-orbit coupling increases the effective mass in the regime with weak electron-phonon coupling, and decreases the effective mass in the regimes of intermediate and strong electron-phonon coupling. Analytical strong-coupling perturbation theory results confirm our numerical results in the small-polaron regime. A large amount of spin-orbit coupling can lead to a significant lowering of the polaron effective mass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.83.195104
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“Influence of oxygen content on the charge-ordering process in La0.5Ca0.5MnO3”. Schuddinck W, Van Tendeloo G, Martin C, Hervieu M, Raveau B, Journal of alloys and compounds 333, 13 (2002). http://doi.org/10.1016/S0925-8388(01)01691-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.133
Times cited: 9
DOI: 10.1016/S0925-8388(01)01691-7
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“Interface controlled electronic variations in correlated heterostructures”. Gehrke K, Moshnyaga V, Samwer K, Lebedev OI, Verbeeck J, Kirilenko D, Van Tendeloo G, Physical review : B : condensed matter and materials physics 82, 113101 (2010). http://doi.org/10.1103/PhysRevB.82.113101
Abstract: An interface modification of (LaCa)MnO3-BaTiO3 superlattices was found to massively influence magnetic and magnetotransport properties. Moreover it determines the crystal structure of the manganite layers, changing it from orthorhombic (Pnma) for the conventional superlattice (cSL), to rhombohedral (R3̅ c) for the modified one (mSL). While the cSL shows extremely nonlinear ac transport, the mSL is an electrically homogeneous material. The observations go beyond an oversimplified picture of dead interface layers and evidence the importance of electronic correlations at perovskite interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.82.113101
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“Investigation of (Bi,Pb)2212 crystals : observation of modulation-free phase”. Musolino N, Bals S, Van Tendeloo G, Clayton N, Walker E, Flukiger R, Physica: C : superconductivity 401, 270 (2004). http://doi.org/10.1016/j.physc.2003.09.052
Abstract: We report the complete disappearance of the structural modulation in heavily lead-doped Bi2-xPbxSr2CaCu2O8+delta crystals observed by transmission electron microscopy. Crystals with a nominal lead content of x = 0.8, corresponding to an effective lead content of x = 0.39, yield the non-modulated phase. The superconducting properties of this modulation-free phase (beta phase) have been studied and compared to those of undoped crystals displaying the modulated phase (alpha phase). Magnetisation measurements reveal that the irreversibility field H-irr(T) and relaxation rates are strongly improved within the beta phase. Measurements of the lower critical field, H-cl, show that the anisotropy factor, E, is considerably reduced in the modulation-free crystals. This is the signature of stronger coupling between CuO2 layers which in turn deeply influences the effectiveness of the pinning. These measurements explain the enhanced pinning properties in moderately Pb-doped crystals in which the a phase and P phase coexist. The enhanced pinning is not only due to the alpha/beta interfaces, which act as effective pinning centers: the emergence of modulation-free domains, characterized by a strongly reduced anisotropy, also significantly contribute to this effect. (C) 2003 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 9
DOI: 10.1016/j.physc.2003.09.052
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“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 9
DOI: 10.1016/0168-583X(95)01236-2
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“Lattice deformations at martensite-martensite interfaces in Ni-Al”. Schryvers D, Boullay P, Kohn R, Ball J, Journal de physique: 4 11, 23 (2001). http://doi.org/10.1051/jp4:2001804
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1051/jp4:2001804
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“Layered oxygen vacancy ordering in Nb-doped SrCo1-xFexO3-\delta perovskite”. Van Rompaey S, Dachraoui W, Turner S, Podyacheva OY, Tan H, Verbeeck J, Abakumov A, Hadermann J, Zeitschrift für Kristallographie 228, 28 (2013). http://doi.org/10.1524/zkri.2013.1556
Abstract: The crystal structure of SrCo0.7Fe0.2Nb0.1O2.72 was determined using a combination of precession electron diffraction (PED), high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and spatially resolved electron energy loss spectroscopy (STEM-EELS). The structure has a tetragonal P4/mmm symmetry with cell parameters a = b = a(p), c = 2a(p) (a(p) being the cell parameter of the perovskite parent structure). Octahedral BO2 layers alternate with the anion-deficient BO1.4 layers, the different B cations are randomly distributed over both layers. The specific feature of the SrCo0.7Fe0.2NB0.1O2.72 microstructure is a presence of extensive nanoscale twinning resulting in domains with alignment of the tetragonal c-axis along all three cubic direction of the perovskite subcell.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.179
Times cited: 9
DOI: 10.1524/zkri.2013.1556
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“Magnetoexciton in vertically coupled InP/GaInP quantum disks: effect of strain on the exciton ground state”. Janssens KL, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 69, 235320 (2004). http://doi.org/10.1103/PhysRevB.69.235320
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.69.235320
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“Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium”. Delabie A, Sioncke S, Rip J, van Elshocht S, Caymax M, Pourtois G, Pierloot K, The journal of physical chemistry: C : nanomaterials and interfaces 115, 17523 (2011). http://doi.org/10.1021/jp206070y
Abstract: Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 9
DOI: 10.1021/jp206070y
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“Microstructural characterization of diamond films deposited on c-BN crystals”. Nistor L, Buschmann V, Ralchenko V, Dinca G, Vlasov I, van Landuyt J, Fuess H, Diamond and related materials
T2 –, 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC 9, 269 (2000). http://doi.org/10.1016/S0925-9635(99)00246-0
Abstract: The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 9
DOI: 10.1016/S0925-9635(99)00246-0
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“Microstructure of tough polycrystalline natural diamond”. Chen JH, Van Tendeloo G, Journal of electron microscopy 48, 121 (1999). http://doi.org/10.1093/oxfordjournals.jmicro.a023658
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 9
DOI: 10.1093/oxfordjournals.jmicro.a023658
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“Model-based determination of dielectric function by STEM low-loss EELS”. Zhang L, Turner S, Brosens F, Verbeeck J, Physical review : B : condensed matter and materials physics 81, 035102 (2010). http://doi.org/10.1103/PhysRevB.81.035102
Abstract: Dielectric properties of materials are crucial in describing the electromagnetic response of materials. As devices are becoming considerably smaller than the optical wavelength, the conventional measuring methods based on optical response are limited by their spatial resolution. Electron energy loss spectroscopy performed in a scanning transmission electron microscope is a good alternative to obtain the dielectric properties with excellent spatial resolution. Due to the overlap of diffraction discs in scanning transmission electron microscopy, it is difficult to apply conventional experimental settings to suppress retardation losses. In this contribution, a relativistic dielectric model for the loss function is presented which is used in a model based optimization scheme to estimate the complex dielectric function of a material. The method is applied to experiments on bulk diamond and SrTiO3 and shows a good agreement with optical reference data when retardation effects are included. Application of this technique to nanoparticles is possible but several theoretical assumptions made in the model of the loss function are violated and interpretation becomes problematic.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Theory of quantum systems and complex systems
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.81.035102
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“Modeling and experimental study of trichloroethylene abatement with a negative direct current corona discharge”. Vandenbroucke AM, Aerts R, Van Gaens W, De Geyter N, Leys C, Morent R, Bogaerts A, Plasma chemistry and plasma processing 35, 217 (2015). http://doi.org/10.1007/s11090-014-9584-7
Abstract: In this work, we study the abatement of dilute trichloroethylene (TCE) in air with a negative direct current corona discharge. A numerical model is used to theoretically investigate the underlying plasma chemistry for the removal of TCE, and a reaction pathway for the abatement of TCE is proposed. The Cl atom, mainly produced by dissociation of COCl, is one of the controlling species in the TCE destruction chemistry and contributes to the production of chlorine containing by-products. The effect of humidity on the removal efficiency is studied and a good agreement is found between experiments and the model for both dry (5 % relative humidity (RH)) and humid air (50 % RH). An increase of the relative humidity from 5 % to 50 % has a negative effect on the removal efficiency, decreasing by ±15 % in humid air. The main loss reactions for TCE are with ClO·, O· and CHCl2. Finally, the by-products and energy cost of TCE abatement are discussed.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.355
Times cited: 9
DOI: 10.1007/s11090-014-9584-7
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“Modeling the impact of junction angles in tunnel field-effect transistors”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, Solid state electronics 69, 31 (2012). http://doi.org/10.1016/j.sse.2011.10.032
Abstract: We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.58
Times cited: 9
DOI: 10.1016/j.sse.2011.10.032
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“Molecular speciation of inorganic mixtures by Fourier transform laser microprobe mass sepctrometry”. Ignatova VA, van Vaeck L, Gijbels R, Adams F, International journal of mass spectrometry 225, 213 (2003). http://doi.org/10.1016/S1387-3806(02)01116-8
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.702
Times cited: 9
DOI: 10.1016/S1387-3806(02)01116-8
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