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Author van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J.
Title Microscopy of gemmological materials Type H3 Book chapter
Year 1997 Publication Abbreviated Journal
Volume Issue Pages 293-320
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Vch Place of Publication Weinheim Editor
Language Wos A1995BC72X00044 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 4 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21419 Serial 2037
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Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L.
Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B
Volume B112 Issue Pages 133-138
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996UW20100029 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited (up) 4 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15453 Serial 2423
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Author Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J.
Title A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant Type A1 Journal article
Year 1994 Publication Philosophical magazine letters Abbreviated Journal Phil Mag Lett
Volume 70 Issue 5 Pages 303-310
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1994PQ20900008 Publication Date 2007-07-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0839;1362-3036; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.087 Times cited (up) 4 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99816 Serial 3715
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Author de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
Title Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon Type A1 Journal article
Year 1999 Publication The review of scientific instruments Abbreviated Journal Rev Sci Instrum
Volume 70 Issue 9 Pages 3661-3663
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000082289200026 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0034-6748; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.515 Times cited (up) 5 Open Access
Notes Approved Most recent IF: 1.515; 1999 IF: 1.293
Call Number UA @ lucian @ c:irua:103487 Serial 48
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Author Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F.
Title Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions Type A1 Journal article
Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 92 Issue 8 Pages 4336-4341
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000178318000024 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited (up) 5 Open Access
Notes Approved Most recent IF: 2.068; 2002 IF: 2.281
Call Number UA @ lucian @ c:irua:39872 Serial 2005
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Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J.
Title Modification of the multislice method for calculating coherent STEM images Type A1 Journal article
Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal
Volume 150 Issue Pages 13-22
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1995RQ21500002 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 5 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13292 Serial 2159
Permanent link to this record
 

 
Author Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
Title Reliability of copper dual damascene influenced by pre-clean Type P1 Proceeding
Year 2002 Publication Analysis Of Integrated Circuits Abbreviated Journal
Volume Issue Pages 118-123
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos 000177689400022 Publication Date 2003-06-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 5 Open Access
Notes Conference name: Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104170 Serial 2865
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Author Vanhellemont, J.; Claeys, C.; van Landuyt, J.
Title In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces Type A1 Journal article
Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal
Volume 150 Issue Pages 497-506
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1995RQ21500043 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 6 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13293 Serial 1582
Permanent link to this record
 

 
Author Fanidis, C.; van Dyck, D.; van Landuyt, J.
Title Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: part 2: solution of the equations and applications to concrete cases Type A1 Journal article
Year 1993 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 48 Issue Pages 133-164
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1993KM78800013 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited (up) 6 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6782 Serial 1609
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Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.
Title New erbium silicide superstructures: a study by high resolution electron microscopy Type A1 Journal article
Year 1996 Publication Physica status solidi: A: applied research Abbreviated Journal
Volume 158 Issue Pages 107-116
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1996VY72800013 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 6 Open Access
Notes Approved PHYSICS, APPLIED 28/145 Q1 #
Call Number UA @ lucian @ c:irua:15460 Serial 2313
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Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures Type A1 Journal article
Year 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc
Volume 4 Issue 1/3 Pages 117-119
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000167727200028 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.359 Times cited (up) 6 Open Access
Notes Approved Most recent IF: 2.359; 2001 IF: 0.419
Call Number UA @ lucian @ c:irua:94968 Serial 3602
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R.
Title Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals Type A1 Journal article
Year 1994 Publication Physica status solidi: A Abbreviated Journal
Volume 143 Issue 2 Pages 277-287
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1994NW15300010 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99870 Serial 919
Permanent link to this record
 

 
Author Volkov, V.V.; Luyten, W.; van Landuyt, J.; Férauge, C.; Oksenoid, K.G.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B.
Title Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy Type A1 Journal article
Year 1993 Publication Physica status solidi: A: applied research Abbreviated Journal
Volume 140 Issue Pages 73-85
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos A1993MM00800004 Publication Date 2007-01-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6159 Serial 945
Permanent link to this record
 

 
Author Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N.
Title High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis Type A1 Journal article
Year 1999 Publication Diamonds an related materials Abbreviated Journal Diam Relat Mater
Volume 8 Issue Pages 738-742
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000080437000123 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited (up) 7 Open Access
Notes Approved Most recent IF: 2.561; 1999 IF: 1.924
Call Number UA @ lucian @ c:irua:27519 Serial 1445
Permanent link to this record
 

 
Author van Landuyt, J.
Title High resolution electron microscopy for materials Type H3 Book chapter
Year 1992 Publication Abbreviated Journal
Volume Issue Pages 23-32
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Eurem 92 Place of Publication Granada Editor
Language Wos 000166175900005 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4097 Serial 1448
Permanent link to this record
 

 
Author Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E.
Title Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions Type A1 Journal article
Year 2002 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat
Volume 14 Issue 44 Pages 10983-10988
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000179541700114 Publication Date 2002-10-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.649 Times cited (up) 7 Open Access
Notes Approved Most recent IF: 2.649; 2002 IF: 1.775
Call Number UA @ lucian @ c:irua:103328 Serial 2061
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited (up) 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope Type A3 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal
Volume 11 Issue Pages 1194-1204
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1995TQ95100016 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13297 Serial 2655
Permanent link to this record
 

 
Author Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G.
Title A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals Type A1 Journal article
Year 1995 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal
Volume 71 Issue 5 Pages 1177-1189
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995QW79500016 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13296 Serial 3721
Permanent link to this record
 

 
Author Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A.
Title Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition Type A1 Journal article
Year 1999 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A
Volume 17 Issue 1 Pages 249-255
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000078136300038 Publication Date 2002-07-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.374 Times cited (up) 8 Open Access
Notes Approved Most recent IF: 1.374; 1999 IF: 1.742
Call Number UA @ lucian @ c:irua:29689 Serial 581
Permanent link to this record
 

 
Author van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
Title Defects and growth mechanisms of AgCl(100) tabular crystals Type A1 Journal article
Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 187 Issue Pages 410-420
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000073710800014 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited (up) 8 Open Access
Notes Approved Most recent IF: 1.751; 1998 IF: 1.307
Call Number UA @ lucian @ c:irua:29675 Serial 625
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.
Title Transmission electron microscopy studies of (111) twinned silver halide microcrystals Type A1 Journal article
Year 1998 Publication Microscopy research and technique Abbreviated Journal Microsc Res Techniq
Volume 42 Issue Pages 85-99
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000075521300003 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1059-910X;1097-0029; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.147 Times cited (up) 8 Open Access
Notes Approved Most recent IF: 1.147; 1998 IF: 0.765
Call Number UA @ lucian @ c:irua:29676 Serial 3713
Permanent link to this record
 

 
Author Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J.
Title A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions Type A1 Journal article
Year 2003 Publication The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical Abbreviated Journal J Phys Chem B
Volume 107 Issue 16 Pages 3690-3696
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Abstract An alternative pathway to assemble mesoporous molecular sieve silicas is developed using nonionic alkylamines and N,N-dimethylalkylamines (SO) as structure-directing agents in acidic conditions. The synthesized mesostructures possess wormhole-like frameworks with pore sizes and pore volumes in the range of 20-90 Angstrom and 0.5-1.3 cm(3)/g, respectively. The formation of the mesophase is controlled by a counterion-mediated mechanism of the type (S(0)H(+))(X(-)I(+)), where S(0)H(+) are protonated water molecules that are hydrogen bonded to the lone electron pairs on the amine surfactant headgroups (S(0)H(+)), X(-) is the counteranion originating from the acid, and I(+) are the positively charged (protonated) silicate species. We found that the stronger the ion X(-) is bonded to S(0)H(+), the more it catalyzes the silica condensation into (S(0)H(+))(X(-)I(+)). Br(-) is shown to be a strong binding anion and therefore a fast silica polymerization promoter compared to Cl(-) resulting in the formation of a higher quality mesophase for the Br(-) syntheses. We also showed that the polymerization rate of the silica, dictated by the counterion, controls the morphology of the mesostructures from nonuniform agglomerated blocks in the case of Br(-) syntheses to spherical particles for the Cl(-) syntheses. Next to many benefits such as low temperature, short synthesis time, and the use of inexpensive, nontoxic, and easily extractable amine templates, the developed materials have a remarkable higher thermal and hydrothermal stability compared to hexagonal mesoporous silica, which is also prepared with nonionic amines but formed through the S(0)I(0) mechanism.
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos 000182350200005 Publication Date 2003-04-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1520-6106;1520-5207; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.177 Times cited (up) 9 Open Access
Notes Approved Most recent IF: 3.177; 2003 IF: 3.679
Call Number UA @ lucian @ c:irua:103300 Serial 24
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A.
Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci
Volume 102 Issue Pages 163-168
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1996VJ86100037 Publication Date 2003-05-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited (up) 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15458 Serial 953
Permanent link to this record
 

 
Author Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F.
Title The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study Type A1 Journal article
Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 181 Issue Pages 218-228
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997YD52700007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited (up) 9 Open Access
Notes Approved Most recent IF: 1.751; 1997 IF: 1.259
Call Number UA @ lucian @ c:irua:21415 Serial 1253
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B
Volume 112 Issue 1-4 Pages 325-329
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Address
Corporate Author Thesis
Publisher Elsevier science bv Place of Publication Amsterdam Editor
Language Wos A1996UW20100069 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited (up) 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95886 Serial 1742
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Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
Title Microstructural characterization of diamond films deposited on c-BN crystals Type A1 Journal article
Year 2000 Publication Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater
Volume 9 Issue 3-6 Pages 269-273
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000087382400009 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited (up) 9 Open Access
Notes Approved Most recent IF: 2.561; 2000 IF: 1.591
Call Number UA @ lucian @ c:irua:102877 Serial 2041
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Author Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J.
Title An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) Type A1 Journal article
Year 1996 Publication Macromolecules Abbreviated Journal Macromolecules
Volume 29 Issue 5 Pages 1554-1561
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Washington, D.C. Editor
Language Wos A1996TY13900024 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0024-9297;1520-5835; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 5.8 Times cited (up) 10 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:15452 Serial 939
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Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.
Title In situ HREM study of electron irradiation effects in AgCl microcrystals Type A1 Journal article
Year 1992 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy
Volume 40 Issue Pages 151-162
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1992HN13400005 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.436 Times cited (up) 10 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4094 Serial 1581
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Author Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J.
Title Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane Type A1 Journal article
Year 1999 Publication Physical chemistry, chemical physics Abbreviated Journal Phys Chem Chem Phys
Volume 1 Issue Pages 3703-3708
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000081765300046 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1463-9076;1463-9084; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.123 Times cited (up) 10 Open Access
Notes Approved Most recent IF: 4.123; 1999 IF: NA
Call Number UA @ lucian @ c:irua:28250 Serial 1660
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