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“Quantum states in a magnetic anti-dot”. Reijniers J, Peeters FM, Matulis A, Physical review : B : condensed matter and materials physics 59, 2817 (1999). http://doi.org/10.1103/PhysRevB.59.2817
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 3.836
Times cited: 92
DOI: 10.1103/PhysRevB.59.2817
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“Dirac electrons in a Kronig-Penney potential: dispersion relation and transmission periodic in the strength of the barriers”. Barbier M, Vasilopoulos P, Peeters FM, Physical review : B : solid state 80, 205415 (2009). http://doi.org/10.1103/PhysRevB.80.205415
Abstract: The transmission T and conductance G through one or multiple one-dimensional, ä-function barriers of two-dimensional fermions with a linear energy spectrum are studied. T and G are periodic functions of the strength P of the ä-function barrier V(x,y)/ℏvF=Pä(x). The dispersion relation of a Kronig-Penney (KP) model of a superlattice is also a periodic function of P and causes collimation of an incident electron beam for P=2ðn and n integer. For a KP superlattice with alternating sign of the height of the barriers the Dirac point becomes a Dirac line for P=(n+1/2)ð.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 93
DOI: 10.1103/PhysRevB.80.205415
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“Stone-Wales defects in silicene : formation, stability, and reactivity of defect sites”. Sahin H, Sivek J, Li S, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 88, 045434 (2013). http://doi.org/10.1103/PhysRevB.88.045434
Abstract: During the synthesis of ultrathin materials with hexagonal lattice structure Stone-Wales (SW) type of defects are quite likely to be formed and the existence of such topological defects in the graphenelike structures results in dramatic changes of their electronic and mechanical properties. Here we investigate the formation and reactivity of such SW defects in silicene. We report the energy barrier for the formation of SW defects in freestanding (similar to 2.4 eV) and Ag(111)-supported (similar to 2.8 eV) silicene and found it to be significantly lower than in graphene (similar to 9.2 eV). Moreover, the buckled nature of silicene provides a large energy barrier for the healing of the SW defect and therefore defective silicene is stable even at high temperatures. Silicene with SW defects is semiconducting with a direct band gap of 0.02 eV and this value depends on the concentration of defects. Furthermore, nitrogen substitution in SW-defected silicene shows that the defect lattice sites are the least preferable substitution locations for the N atoms. Our findings show the easy formation of SW defects in silicene and also provide a guideline for band gap engineering in silicene-based materials through such defects.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 93
DOI: 10.1103/PhysRevB.88.045434
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“Vortex shells in mesoscopic superconducting disks”. Baelus BJ, Cabral LRE, Peeters FM, Physical review : B : condensed matter and materials physics 69, 064506 (2004). http://doi.org/10.1103/PhysRevB.69.064506
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 94
DOI: 10.1103/PhysRevB.69.064506
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“Size-dependent enhancement of superconductivity in Al and Sn nanowires: shape-resonance effect”. Shanenko AA, Croitoru MD, Zgirski M, Peeters FM, Arutyunov K, Physical review : B : condensed matter and materials physics 74, 052502 (2006). http://doi.org/10.1103/PhysRevB.74.052502
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 95
DOI: 10.1103/PhysRevB.74.052502
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“Wave-packet dynamics and valley filter in strained graphene”. Chaves A, Covaci L, Rakhimov KY, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 82, 205430 (2010). http://doi.org/10.1103/PhysRevB.82.205430
Abstract: The time evolution of a wave packet in strained graphene is studied within the tight-binding model and continuum model. The effect of an external magnetic field, as well as a strain-induced pseudomagnetic field, on the wave-packet trajectories and zitterbewegung are analyzed. Combining the effects of strain with those of an external magnetic field produces an effective magnetic field which is large in one of the Dirac cones, but can be practically zero in the other. We construct an efficient valley filter, where for a propagating incoming wave packet consisting of momenta around the K and K' Dirac points, the outgoing wave packet exhibits momenta in only one of these Dirac points while the components of the packet that belong to the other Dirac point are reflected due to the Lorentz force. We also found that the zitterbewegung is permanent in time in the presence of either external or strain-induced magnetic fields, but when both the external and strain-induced magnetic fields are present, the zitterbewegung is transient in one of the Dirac cones, whereas in the other cone the wave packet exhibits permanent spatial oscillations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 95
DOI: 10.1103/PhysRevB.82.205430
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“Theory of elastic and piezoelectric effects in two-dimensional hexagonal boron nitride”. Michel KH, Verberck B, Physical review : B : solid state 80, 224301 (2009). http://doi.org/10.1103/PhysRevB.80.224301
Abstract: Starting from an empirical force constant model of valence interactions and calculating by Ewalds method the ion-ion force constants, we derive the dynamical matrix for a monolayer crystal of hexagonal boron nitride (h-BN). The phonon dispersion relations are calculated. The interplay between valence and Coulomb forces is discussed. It is shown by analytical methods that the longitudinal and the transverse optical (LO and TO) phonon branches for in-plane motion are degenerate at the Γ point of the Brillouin zone. Away from Γ, the LO branch exhibits pronounced overbending. It is found that the nonanalytic Coulomb contribution to the dynamical matrix causes a linear increase of the LO branch with increasing wave vector starting at Γ. This effect is general for two-dimensional (2D) ionic crystals. Performing a long-wavelength expansion of the dynamical matrix, we use Borns perturbation method to calculate the elastic constants (tension coefficients). Since the crystal is noncentrosymmetric, internal displacements due to relative shifts between the two sublattices (B and N) contribute to the elastic constants. These internal displacements are responsible for piezoelectric and dielectric phenomena. The piezoelectric stress constant and the dielectric susceptibility of 2D h-BN are calculated.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 96
DOI: 10.1103/PhysRevB.80.224301
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“Vortex configurations and critical parameters in superconducting thin films containing antidot arrays: nonlinear Ginzburg-Landau theory”. Berdiyorov GR, Milošević, MV, Peeters FM, Physical review : B : condensed matter and materials physics 74, Artn 174512 (2006). http://doi.org/10.1103/PhysRevB.74.174512
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 97
DOI: 10.1103/PhysRevB.74.174512
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“Interfacial spin glass state and exchange bias in manganite bilayers with competing magnetic orders”. Ding JF, Lebedev OI, Turner S, Tian YF, Hu WJ, Seo JW, Panagopoulos C, Prellier W, Van Tendeloo G, Wu T, Physical review : B : condensed matter and materials physics 87, 054428 (2013). http://doi.org/10.1103/PhysRevB.87.054428
Abstract: The magnetic properties of manganite bilayers composed of G-type antiferromagnetic (AFM) SrMnO3 and double-exchange ferromagnetic (FM) La0.7Sr0.3MnO3 are studied. A spin-glass state is observed as a result of competing magnetic orders and spin frustration at the La0.7Sr0.3MnO3/SrMnO3 interface. The dependence of the irreversible temperature on the cooling magnetic field follows the Almeida-Thouless line. Although an ideal G-type AFM SrMnO3 is featured with a compensated spin configuration, the bilayers exhibit exchange bias below the spin glass freezing temperature, which is much lower than the Néel temperature of SMO, indicating that the exchange bias is strongly correlated with the spin glass state. The results indicate that the spin frustration that originates from the competition between the AFM super-exchange and the FM double-exchange interactions can induce a strong magnetic anisotropy at the La0.7Sr0.3MnO3/SrMnO3 interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 98
DOI: 10.1103/PhysRevB.87.054428
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“Hexagonal A1N : dimensional-crossover-driven band-gap transition”. Bacaksiz C, Sahin H, Ozaydin HD, Horzum S, Senger RT, Peeters FM, Physical review : B : condensed matter and materials physics 91, 085430 (2015). http://doi.org/10.1103/PhysRevB.91.085430
Abstract: Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013)], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm(-1) and an E-g mode at 703 cm(-1), which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA'-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N = 1 – 9, we predict that thicker structures (N >= 10) have a direct band gap at the Gamma point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 99
DOI: 10.1103/PhysRevB.91.085430
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“Magnetic field dependence of the energy of negatively charged excitons in semiconductor quantum wells”. Riva C, Peeters FM, Varga K, Physical review : B : condensed matter and materials physics 63, 115302 (2001). http://doi.org/10.1103/PhysRevB.63.115302
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 100
DOI: 10.1103/PhysRevB.63.115302
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“Proximity induced metal-insulator transition in YBa2Cu3O7/La2/3Ca1/3MnO3 superlattices”. Holden T, Habermeier H-U, Cristiani G, Golnik A, Boris A, Pimenov A, Humlicek J, Lebedev OI, Van Tendeloo G, Keimer B, Bernhard C, Physical review : B : condensed matter and materials physics 69, 064505 (2004). http://doi.org/10.1103/PhysRevB.69.064505
Abstract: The far-infrared dielectric response of superlattices (SL) composed of superconducting YBa2Cu3O7 (YBCO) and ferromagnetic La0.67Ca0.33MnO3 (LCMO) has been investigated by ellipsometry. A drastic decrease of the free-carrier response is observed which involves an unusually large length scale of d(crit)approximate to20 nm in YBCO and d(crit)approximate to10 nm in LCMO. A corresponding suppression of metallicity is not observed in SL's where LCMO is replaced by the paramagnetic metal LaNiO3. Our data suggest that either a long-range charge transfer from the YBCO to the LCMO layers or alternatively a strong coupling of the charge carriers to the different and competitive kind of magnetic correlations in the LCMO and YBCO layers is at the heart of the observed metal-insulator transition. The low free-carrier response observed in the far-infrared dielectric response of the magnetic superconductor RuSr2GdCu2O8 is possibly related to this effect.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 101
DOI: 10.1103/PhysRevB.69.064505
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“Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 102
DOI: 10.1103/PhysRevB.48.4666
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“Rearrangement of the vortex lattice due to instabilities of vortex flow”. Vodolazov DY, Peeters FM, Physical review : B : condensed matter and materials physics 76, 014521 (2007). http://doi.org/10.1103/PhysRevB.76.014521
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 103
DOI: 10.1103/PhysRevB.76.014521
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“Electric-field control of the band gap and Fermi energy in graphene multilayers by top and back gates”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : solid state 80, 195401 (2009). http://doi.org/10.1103/PhysRevB.80.195401
Abstract: It is known that a perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum which is tunable by the gate voltage. Here we consider a system of graphene multilayers in the presence of a positively charged top and a negatively charged back gate to control independently the density of electrons on the graphene layers and the Fermi energy of the system. The band structure of three- and four-layer graphene systems in the presence of the top and back gates is obtained using a tight-binding approach. A self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We predict that for opposite and equal charges on the top and bottom layers an energy gap is opened at the Fermi level. For an even number of layers this gap is larger than in the case of an odd number of graphene layers. We find that the circular asymmetry of the spectrum, which is a consequence of the trigonal warping, changes the size of the induced electronic gap, even when the total density of the induced electrons on the graphene layers is low.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.80.195401
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“Electric field tuning of the band gap in graphene multilayers”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : solid state 79, 035421 (2009). http://doi.org/10.1103/PhysRevB.79.035421
Abstract: A perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum. This gap is tunable by the gate voltage and its size depends on the number of layers. We use a tight-binding approach to calculate the band structure and include a self-consistent calculation in order to obtain the density of charge carriers. Results are presented for systems consisting of three and four layers of graphene. The effect of the circular asymmetry of the band structure on the gap is critically examined.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.79.035421
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“Procedure to count atoms with trustworthy single-atom sensitivity”. Van Aert S, de Backer A, Martinez GT, Goris B, Bals S, Van Tendeloo G, Rosenauer A, Physical review : B : condensed matter and materials physics 87, 064107 (2013). http://doi.org/10.1103/PhysRevB.87.064107
Abstract: We report a method to reliably count the number of atoms from high-angle annular dark field scanning transmission electron microscopy images. A model-based analysis of the experimental images is used to measure scattering cross sections at the atomic level. The high sensitivity of these measurements in combination with a thorough statistical analysis enables us to count atoms with single-atom sensitivity. The validity of the results is confirmed by means of detailed image simulations. We will show that the method can be applied to nanocrystals of arbitrary shape, size, and atom type without the need for a priori knowledge about the atomic structure.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.87.064107
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“Nanoindentation of a circular sheet of bilayer graphene”. Neek-Amal M, Peeters FM, Physical review : B : condensed matter and materials physics 81, 235421 (2010). http://doi.org/10.1103/PhysRevB.81.235421
Abstract: Nanoindentation of bilayer graphene is studied using molecular-dynamics simulations. We compared our simulation results with those from elasticity theory as based on the nonlinear Föppl-Hencky equations with rigid boundary condition. The force-deflection values of bilayer graphene are compared to those of monolayer graphene. Youngs modulus of bilayer graphene is estimated to be 0.8 TPa which is close to the value for graphite. Moreover, an almost flat bilayer membrane at low temperature under central load has a 14% smaller Youngs modulus as compared to the one at room temperature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 108
DOI: 10.1103/PhysRevB.81.235421
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“Mechanical properties of monolayer GaS and GaSe crystals”. Yagmurcukardes M, Senger RT, Peeters FM, Sahin H, Physical review B 94, 245407 (2016). http://doi.org/10.1103/PHYSREVB.94.245407
Abstract: The mechanical properties of monolayer GaS and GaSe crystals are investigated in terms of their elastic constants: in-plane stiffness (C), Poisson ratio (nu), and ultimate strength (sigma(U)) by means of first-principles calculations. The calculated elastic constants are compared with those of graphene and monolayer MoS2. Our results indicate that monolayer GaS is a stiffer material than monolayer GaSe crystals due to the more ionic character of the Ga-S bonds than the Ga-Se bonds. Although their Poisson ratio values are very close to each other, 0.26 and 0.25 for GaS and GaSe, respectively, monolayer GaS is a stronger material than monolayer GaSe due to its slightly higher sU value. However, GaS and GaSe crystals are found to be more ductile and flexible materials than graphene and MoS2. We have also analyzed the band-gap response of GaS and GaSe monolayers to biaxial tensile strain and predicted a semiconductor-metal crossover after 17% and 14% applied strain, respectively, for monolayer GaS and GaSe. In addition, we investigated how the mechanical properties are affected by charging. We found that the flexibility of single layer GaS and GaSe displays a sharp increase under 0.1e/cell charging due to the repulsive interactions between extra charges located on chalcogen atoms. These charging-controllable mechanical properties of single layers of GaS and GaSe can be of potential use for electromechanical applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 108
DOI: 10.1103/PHYSREVB.94.245407
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“Spin-current modulation and square-wave transmission through periodically stubbed electron waveguides”. Wang XF, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 65, 165217 (2002). http://doi.org/10.1103/PhysRevB.65.165217
Abstract: Ballistic spin transport through waveguides, with symmetric or asymmetric double stubs attached to them periodically, is studied systematically in the presence of a weak spin-orbit coupling that makes the electrons precess. By an appropriate choice of the waveguide length and of the stub parameters injected spin-polarized electrons can be blocked completely and the transmission shows a periodic and nearly-square-type behavior, with values 1 and 0, with wide gaps when only one mode is allowed to propagate in the waveguide. A similar behavior is possible for a certain range of the stub parameters even when two modes can propagate in the waveguide and the conductance is doubled. Such a structure is a good candidate for establishing a realistic spin transistor. A further modulation of the spin current can be achieved by inserting defects in a finite-number stub superlattice. Finite-temperature effects on the spin conductance are also considered.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 112
DOI: 10.1103/PhysRevB.65.165217
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“Hydrogenation of bilayer graphene and the formation of bilayer graphane from first principles”. Leenaerts O, Partoens B, Peeters FM, Physical review : B : solid state 80, 245422 (2009). http://doi.org/10.1103/PhysRevB.80.245422
Abstract: We performed ab initio density-functional theory calculations to investigate the process of hydrogenation of a bilayer of graphene. 50% hydrogen coverage is possible in case that the hydrogen atoms are allowed to adsorb on both sides of the bilayer. In this case interlayer chemical bonding occurs which stabilizes the structure. At maximum coverage, a bilayer of graphane is formed which has properties that are similar to those of a single layer of graphane.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 113
DOI: 10.1103/PhysRevB.80.245422
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“Double-exchange mechanisms for Mn-doped III-V ferromagnetic semiconductors”. Krstajić, PM, Peeters FM, Ivanov VA, Fleurov V, Kikoin K, Physical review : B : condensed matter and materials physics 70, 195215 (2004). http://doi.org/10.1103/PhysRevB.70.195215
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 115
DOI: 10.1103/PhysRevB.70.195215
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“Stability, dynamical properties and melting of a classical bi-layer Wigner crystal”. Goldoni G, Peeters FM, Physical review : B : condensed matter and materials physics 53, 4591 (1996). http://doi.org/10.1103/PhysRevB.53.4591
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 117
DOI: 10.1103/PhysRevB.53.4591
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“Excitons and charged excitons in semiconductor quantum wells”. Riva C, Peeters FM, Varga K, Physical review : B : condensed matter and materials physics 61, 13873 (2000). http://doi.org/10.1103/PhysRevB.61.13873
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 120
DOI: 10.1103/PhysRevB.61.13873
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“From VO2(B) to VO2(R): theoretical structures of VO2 polymorphs and in situ electron microscopy”. Leroux C, Nihoul G, Van Tendeloo G, Physical review : B : condensed matter and materials physics 57, 5111 (1998). http://doi.org/10.1103/PhysRevB.57.5111
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 122
DOI: 10.1103/PhysRevB.57.5111
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“Neutron-scattering and electron microscopy studies of premartensitic phenomena in NixAl100-x alloys”. Shapiro SM, Yang BX, Noda Y, Tanner LE, Schryvers D, Physical review : B : condensed matter and materials physics 44, 9301 (1991)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 123
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“Thermal properties of black and blue phosphorenes from a first-principles quasiharmonic approach”. Aierken Y, Çakır D, Sevik C, Peeters FM, Physical review : B : condensed matter and materials physics 92, 081408 (2015). http://doi.org/10.1103/PhysRevB.92.081408
Abstract: Different allotropes of phosphorene are possible of which black and blue phosphorus are the most stable. While blue phosphorus has isotropic properties, black phosphorus is strongly anisotropic in its electronic and optical properties due to its anisotropic crystal structure. In this work, we systematically investigated the lattice thermal properties of black and blue phosphorene by using first-principles calculations based on the quasiharmonic approximation approach. Similar to the optoelectronic and electronic properties, we predict that black phosphorene has highly anisotropic thermal properties, in contrast to the blue phase. The linear thermal expansion coefficients along the zigzag and armchair direction differ up to 20% in black phosphorene. The armchair direction of black phosphorene is more expandable as compared to the zigzag direction and the biaxial expansion of blue phosphorene under finite temperature. Our comparative analysis reveals that the inclusion of finite-temperature effects makes the blue phase thermodynamically more stable over the black phase above 135 K.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 124
DOI: 10.1103/PhysRevB.92.081408
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“Spintronic single-qubit gate based on a quantum ring with spin-orbit interaction”. Földi P, Molnár B, Benedict MG, Peeters FM, Physical review : B : condensed matter and materials physics 71, 033309 (2005). http://doi.org/10.1103/PhysRevB.71.033309
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 126
DOI: 10.1103/PhysRevB.71.033309
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“Significant effect of stacking on the electronic and optical properties of few-layer black phosphorus”. Çakir D, Sevik C, Peeters FM, Physical review : B : condensed matter and materials physics 92, 165406 (2015). http://doi.org/10.1103/PhysRevB.92.165406
Abstract: The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first-principles calculations within the framework of density functional theory. We find that inclusion of many-body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and optical properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G(0)W(0) scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene are very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangements that are different from the ground state structure in both bilayer and trilayer black phosphorus exhibit significant modified valence bands along the zigzag direction and result in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. The calculated binding energy of the bound exciton hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 127
DOI: 10.1103/PhysRevB.92.165406
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“Electronic, vibrational, elastic, and piezoelectric properties of monolayer Janus MoSTe phases: A first-principles study”. Yagmurcukardes M, Sevik C, Peeters FM, Physical review B 100, 045415 (2019). http://doi.org/10.1103/PHYSREVB.100.045415
Abstract: By performing density functional theory based first-principles calculations, the electronic, vibrational, elastic, and piezoelectric properties of two dynamically stable crystal phases of monolayer Janus MoSTe, namely 1H-MoSTe and 1T'-MoSTe, are investigated. Vibrational frequency analysis reveals that the other possible crystal structure, 1T-MoSTe, of this Janus monolayer does not exhibit dynamical stability. The 1H-MoSTe phase is found to be an indirect band-gap semiconductor while 1T'-MoSTe is predicted as small-gap semiconductor. Notably, in contrast to the direct band-gap nature of monolayers 1H-MoS2 and 1H-MoTe2, 1H-MoSTe is found to be an indirect gap semiconductor driven by the induced surface strains on each side of the structure. The calculated Raman spectrum of each structure shows unique character enabling us to clearly distinguish the stable crystal phases via Raman measurements. The systematic piezoelectric stress and strain coefficient analysis reveals that out-of-plane piezoelectricity appears in 1H-MoSTe and the noncentral symmetric 1T'-MoSTe has large piezoelectric coefficients. Static total-energy calculations show clearly that the formation of 1T'-MoSTe is feasible by using 1T'-MoTe2 as a basis monolayer. Therefore, we propose that the Janus MoSTe structure can be fabricated in two dynamically stable phases which possess unique electronic, dynamical, and piezoelectric properties.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 128
DOI: 10.1103/PHYSREVB.100.045415
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