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“BCS-BEC crossover in quantum confined superconductors”. Guidini A, Flammia L, Milošević, MV, Perali A, Journal of superconductivity and novel magnetism 29, 711 (2016). http://doi.org/10.1007/s10948-015-3308-y
Abstract: Ultranarrow superconductors are in the strong quantum confinement regime with formation of multiple coherent condensates associated with the many subbands of the electronic structure. Here, we analyze the multiband BCS-BEC crossover induced by the chemical potential tuned close to a subband bottom, in correspondence of a superconducting shape resonance. The evolution of the condensate fraction and of the pair correlation length in the ground state as functions of the chemical potential demonstrates the tunability of the BCS-BEC crossover for the condensate component of the selected subband. The extension of the crossover regime increases when the pairing strength and/or the characteristic energy of the interaction get larger. Our results indicate the coexistence of large and small Cooper pairs in the crossover regime, leading to the optimal parameter configuration for high transition temperature superconductivity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.18
Times cited: 12
DOI: 10.1007/s10948-015-3308-y
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“Spontaneous symmetry breaking in vortex systems with two repulsive lengthscales”. Curran PJ, Desoky WM, Milošević, MV, Chaves A, Laloe J-B, Moodera JS, Bending SJ, Scientific reports 5, 15569 (2015). http://doi.org/10.1038/srep15569
Abstract: Scanning Hall probe microscopy (SHPM) has been used to study vortex structures in thin epitaxial films of the superconductor MgB2. Unusual vortex patterns observed in MgB2 single crystals have previously been attributed to a competition between short-range repulsive and long-range attractive vortex-vortex interactions in this two band superconductor; the type 1.5 superconductivity scenario. Our films have much higher levels of disorder than bulk single crystals and therefore both superconducting condensates are expected to be pushed deep into the type 2 regime with purely repulsive vortex interactions. We observe broken symmetry vortex patterns at low fields in all samples after field-cooling from above T-c. These are consistent with those seen in systems with competing repulsions on disparate length scales, and remarkably similar structures are reproduced in dirty two band Ginzburg-Landau calculations, where the simulation parameters have been defined by experimental observations. This suggests that in our dirty MgB2 films, the symmetry of the vortex structures is broken by the presence of vortex repulsions with two different lengthscales, originating from the two distinct superconducting condensates. This represents an entirely new mechanism for spontaneous symmetry breaking in systems of superconducting vortices, with important implications for pinning phenomena and high current density applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 4.259
Times cited: 12
DOI: 10.1038/srep15569
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“Quantum-Transport Characteristics of a p-n Junction on Single-Layer TiS3”. Iyikanat F, Senger RT, Peeters FM, Sahin H, ChemPhysChem : a European journal of chemical physics and physical chemistry 17, 3985 (2016). http://doi.org/10.1002/CPHC.201600751
Abstract: By using density functional theory and non-equilibrium Green's function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p-n junction. We constructed a lateral p-n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p-n junction. In addition, the spin-dependent current-volt-age characteristics of the constructed TiS3 p-n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p-n junction. These prominent conduction properties of the TiS3 p-n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.075
Times cited: 12
DOI: 10.1002/CPHC.201600751
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“Strained graphene Hall bar”. Milovanovic SP, Peeters FM, Journal of physics : condensed matter 29, 075601 (2017). http://doi.org/10.1088/1361-648X/AA50D3
Abstract: The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport theory and we found that both approaches exhibit similar characteristic features. The effects of the Gaussian bump are manifested by a decrease of the bend resistance, RB, around zero-magnetic field and the occurrence of side-peaks in RB. These features are explained as a consequence of bump-assisted scattering of electrons towards different terminals of the Hall bar. Using these features we are able to give an estimate of the size of the bump. Additional oscillations in RB are found in the quantum description that are due to the population/depopulation of Landau levels. The bump has a minor influence on the Hall resistance even for very high values of the pseudo-magnetic field. When the bump is placed outside the center of the Hall bar valley polarized electrons can be collected in the leads.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 12
DOI: 10.1088/1361-648X/AA50D3
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“Electronic and transport properties of n-type monolayer black phosphorus at low temperatures”. Han FW, Xu W, Li LL, Zhang C, Dong HM, Peeters FM, Physical review B 95, 115436 (2017). http://doi.org/10.1103/PhysRevB.95.115436
Abstract: We present a detailed theoretical study of the electronic and transport properties of monolayer black phosphorus (BP). This study is motivated by recent experimental activities in investigating n-type few-layer BP systems. The electron density of states, the screening length, and the low-temperature electron mobility are calculated for monolayer BP (MLBP). In particular, the electron transport mobilities along the armchair and zigzag directions are examined on the basis of the momentum-balance equation derived from a semiclassical Boltzmann equation. The anisotropic electron mobilities in MLBP along different directions are demonstrated where the electron-impurity scattering is considered. Furthermore, we compare the results obtained from two electronic band structures of MLBP and find that the simplified model can describe quite rightly the electronic and transport properties of MLBP. This study is relevant to the application of few-layer BP based electronic systems as advanced electronic devices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PhysRevB.95.115436
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“Structural and electronic properties of defects at grain boundaries in CuInSe2”. Saniz R, Bekaert J, Partoens B, Lamoen D, Physical chemistry, chemical physics 19, 14770 (2017). http://doi.org/10.1039/C7CP02033C
Abstract: We report on a first-principles study of the structural and electronic properties of a Sigma3 (112) grain boundary model in CuInSe2. The study focuses on a coherent, stoichiometry preserving, cation–Se terminated grain boundary, addressing the properties of the grain boundary as such, as well as the effect
of well known defects in CuInSe2. We show that in spite of its apparent simplicity, such a grain boundary exhibits a very rich phenomenology, providing an explanation for several of the experimentally observed properties of grain boundaries in CuInSe2 thin films. In particular, we show that the combined effect of Cu vacancies and cation antisites can result in the observed Cu depletion with no In enrichment at the grain boundaries. Furthermore, Cu vacancies are unlikely to produce a hole barrier at the grain boundaries, but Na may indeed have such an effect. We find that Na-on-Cu defects will tend to form abundantly at
the grain boundaries, and can provide a mechanism for the carrier depletion and/or type inversion experimentally reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 12
DOI: 10.1039/C7CP02033C
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“Nonlinear light mixing by graphene plasmons”. Kundys D, Van Duppen B, Marshall OP, Rodriguez F, Torre I, Tomadin A, Polini M, Grigorenko AN, Nano letters 18, 282 (2018). http://doi.org/10.1021/ACS.NANOLETT.7B04114
Abstract: <script type='text/javascript'>document.write(unpmarked('Graphene is known to possess strong optical nonlinearity which turned out to be suitable for creation of efficient saturable absorbers in mode locked fiber lasers. Nonlinear response of graphene can be further enhanced by the presence of graphene plasmons. Here, we report a novel nonlinear effect observed in nanostructured graphene which comes about due to excitation of graphene plasmons. We experimentally detect and theoretically explain enhanced mixing of near-infrared and mid-infrared light in arrays of graphene nanoribbons. Strong compression of light by graphene plasmons implies that the described effect of light mixing is nonlocal in nature and orders of magnitude larger than the conventional local graphene nonlinearity. Both second and third order nonlinear effects were observed in our experiments with the recalculated third-order nonlinearity coefficient reaching values of 4.5 x 10(-6) esu. The suggested effect could be used in variety of applications including nonlinear light modulators, light multiplexers, light logic, and sensing devices.'));
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 12.712
Times cited: 12
DOI: 10.1021/ACS.NANOLETT.7B04114
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“Self-limiting growth of two-dimensional palladium between graphene oxide layers”. Su Y, Prestat E, Hu C, Puthiyapura VK, Neek-Amal M, Xiao H, Huang K, Kravets VG, Haigh SJ, Hardacre C, Peeters FM, Nair RR, Nano letters 19, 4678 (2019). http://doi.org/10.1021/ACS.NANOLETT.9B01733
Abstract: The ability of different materials to display self-limiting growth has recently attracted an enormous amount of attention because of the importance of nanoscale materials in applications for catalysis, energy conversion, (opto)-electronics, and so forth. Here, we show that the electrochemical deposition of palladium (Pd) between graphene oxide (GO) sheets result in the self-limiting growth of 5-nm-thick Pd nanosheets. The self-limiting growth is found to be a consequence of the strong interaction of Pd with the confining GO sheets, which results in the bulk growth of Pd being energetically unfavorable for larger thicknesses. Furthermore, we have successfully carried out liquid exfoliation of the resulting Pd-GO laminates to isolate Pd nanosheets and have demonstrated their high efficiency in continuous flow catalysis and electrocatalysis.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 12.712
Times cited: 12
DOI: 10.1021/ACS.NANOLETT.9B01733
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“Interfacial characteristics, Schottky contact, and optical performance of a graphene/Ga2SSe van der Waals heterostructure: Strain engineering and electric field tunability”. Nguyen HTT, Obeid MM, Bafekry A, Idrees M, Vu TV, Phuc H V, Hieu NN, Le Hoa T, Amin B, Nguyen C V, Physical Review B 102, 075414 (2020). http://doi.org/10.1103/PHYSREVB.102.075414
Abstract: Two-dimensional graphene-based van der Waals heterostructures have received considerable interest because of their intriguing characteristics compared with the constituent single-layer two-dimensional materials. Here, we investigate the interfacial characteristics, Schottky contact, and optical performance of graphene/Ga2SSe van der Waals (vdW) heterostructure using first-principles calculations. The effects of stacking patterns, electric gating, and interlayer coupling on the interfacial properties of graphene/Ga2SSe heterostructures are also examined. Our results demonstrate that the Dirac cone of graphene is well preserved at the F point in all stacking patterns due to the weak vdW interactions, which keep the heterostructures feasible such that they can be obtained in further experiments. Moreover, depending on the stacking patterns, a small band gap of about 13-17 meV opens in graphene and has a high carrier mobility, indicating that the graphene/Ga2SSe heterostructures are potential candidates for future high-speed nanoelectronic applications. In the ground state, the graphene/Ga2SSe heterostructures form an n-type Schottky contact. The transformation from an n-type to a p-type Schottky contact or to an Ohmic contact can be forced by electric gating or by varying the interlayer coupling. Our findings could provide physical guidance for designing controllable Schottky nanodevices with high electronic and optical performances.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 12
DOI: 10.1103/PHYSREVB.102.075414
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“Breakdown of universal scaling for nanometer-sized bubbles in graphene”. Villarreal R, Lin P-C, Faraji F, Hassani N, Bana H, Zarkua Z, Nair MN, Tsai H-C, Auge M, Junge F, Hofsaess HC, De Gendt S, De Feyter S, Brems S, Ahlgren EH, Neyts EC, Covaci L, Peeters FM, Neek-Amal M, Pereira LMC, Nano Letters 21, 8103 (2021). http://doi.org/10.1021/ACS.NANOLETT.1C02470
Abstract: We report the formation of nanobubbles on graphene with a radius of the order of 1 nm, using ultralow energy implantation of noble gas ions (He, Ne, Ar) into graphene grown on a Pt(111) surface. We show that the universal scaling of the aspect ratio, which has previously been established for larger bubbles, breaks down when the bubble radius approaches 1 nm, resulting in much larger aspect ratios. Moreover, we observe that the bubble stability and aspect ratio depend on the substrate onto which the graphene is grown (bubbles are stable for Pt but not for Cu) and trapped element. We interpret these dependencies in terms of the atomic compressibility of the noble gas as well as of the adhesion energies between graphene, the substrate, and trapped atoms.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 12.712
Times cited: 12
DOI: 10.1021/ACS.NANOLETT.1C02470
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“Statics and dynamics of skyrmions interacting with disorder and nanostructures”. Reichhardt C, Reichhardt CJO, Milošević, MV, Reviews of modern physics 94, 035005 (2022). http://doi.org/10.1103/REVMODPHYS.94.035005
Abstract: Magnetic skyrmions are topologically stable nanoscale particlelike objects that were discovered in 2009. Since that time, intense research interest in the field has led to the identification of numerous compounds that support skyrmions over a range of conditions spanning from cryogenic to room temperatures. Skyrmions can be set into motion under various types of driving, and the combination of their size, stability, and dynamics makes them ideal candidates for numerous applications. At the same time, skyrmions represent a new class of system in which the energy scales of the skyrmion-skyrmion interactions, sample disorder, temperature, and drive can compete. A growing body of work indicates that the static and dynamic states of skyrmions can be influenced strongly by pinning or disorder in the sample; thus, an understanding of such effects is essential for the eventual use of skyrmions in applications. The current state of knowledge regarding individual skyrmions and skyrmion assemblies interacting with quenched disorder or pinning is reviewed. The microscopic mechanisms for skyrmion pinning, including the repulsive and attractive interactions that can arise from impurities, grain boundaries, or nanostructures, are outlined. This is followed by descriptions of depinning phenomena, sliding states over disorder, the effect of pinning on the skyrmion Hall angle, the competition between thermal and pinning effects, the control of skyrmion motion using ordered potential landscapes such as one-or two-dimensional periodic asymmetric substrates, the creation of skyrmion diodes, and skyrmion ratchet effects. Highlighted are the distinctions arising from internal modes and the strong gyrotropic or Magnus forces that cause the dynamical states of skyrmions to differ from those of other systems with pinning, such as vortices in type-II superconductors, charge density waves, or colloidal particles. Throughout this review future directions and open questions related to the and in are also discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 44.1
Times cited: 12
DOI: 10.1103/REVMODPHYS.94.035005
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“Application of optical beams to electrons in graphene”. Matulis A, Masir MR, Peeters FM, Physical review : B : condensed matter and materials physics 83, 115458 (2011). http://doi.org/10.1103/PhysRevB.83.115458
Abstract: The technique of beam optics is applied to the description of the wave function of Dirac electrons. This approach is illustrated by considering electron transmission through simple nonhomogeneous structures, such as flat and bent p-n junctions and superlattices. We found that a convex p-n junction compresses the beam waist, while a concave interface widens it without loosing its focusing properties. At a flat p-n junction the waist of the transmitted Gaussian beam can be narrowed or widened, depending on the angle of incidence. A general condition is derived for the occurrence of beam collimation in a superlattice which is less stringent than previous discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.83.115458
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“Current-induced cutting and recombination of magnetic superconducting vortex loops in mesoscopic superconductor-ferromagnet heterostructures”. Berdiyorov GR, Doria MM, de Romaguera ARC, Milošević, MV, Brandt EH, Peeters FM, Physical review : B : condensed matter and materials physics 87, 184508 (2013). http://doi.org/10.1103/PhysRevB.87.184508
Abstract: Vortex loops are generated by the inhomogeneous stray field of a magnetic dipole on top of a current-carrying mesoscopic superconductor. Cutting and recombination processes unfold under the applied drive, resulting in periodic voltage oscillations across the sample. We show that a direct and detectable consequence of the cutting and recombination of these vortex loops in the present setup is the onset of vortices at surfaces where they were absent prior to the application of the external current. The nonlinear dynamics of vortex loops is studied within the time-dependent Ginzburg-Landau theory to describe the profound three-dimensional features of their time evolution.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.87.184508
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“Electron polarization function and plasmons in metallic armchair graphene nanoribbons”. Shylau AA, Badalyan SM, Peeters FM, Jauho AP, Physical review : B : condensed matter and materials physics 91, 205444 (2015). http://doi.org/10.1103/PhysRevB.91.205444
Abstract: Plasmon excitations in metallic armchair graphene nanoribbons are investigated using the random phase approximation. An exact analytical expression for the polarization function of Dirac fermions is obtained, valid for arbitrary temperature and doping. We find that at finite temperatures, due to the phase space redistribution among inter-band and intra-band electronic transitions in the conduction and valence bands, the full polarization function becomes independent of temperature and position of the chemical potential. It is shown that for a given width of nanoribbon there exists a single plasmon mode whose energy dispersion is determined by the graphene's fine structure constant. In the case of two Coulomb-coupled nanoribbons, this plasmon splits into in-phase and out-of-phase plasmon modes with splitting energy determined by the inter-ribbon spacing.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.91.205444
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“Electronic and dynamical properties of Si/Ge core-shell nanowires”. Peelaers H, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 82, 113411 (2010). http://doi.org/10.1103/PhysRevB.82.113411
Abstract: Full ab initio techniques are applied to study the electronic and dynamical properties of free standing, hydrogen-passivated Si/Ge core-shell nanowires oriented along the [110] direction. All studied wires exhibit a direct band gap and are found to be structurally stable. The different contributions of the core and shell atoms to the phonon spectra are identified. The acoustic phonon velocities and the frequencies of some typical optical modes are compared with those of pure Si and Ge nanowires. These depend either on the concentration or on the type of core material. Optical modes are hardened and longitudinal acoustic velocities are softened with decreasing wire diameter.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.82.113411
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“Enhancement and decrease of critical current due to suppression of superconductivity by a magnetic field”. Vodolazov DY, Golubovic DS, Peeters FM, Moshchalkov VV, Physical review : B : condensed matter and materials physics 76, 134505 (2007). http://doi.org/10.1103/PhysRevB.76.134505
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.76.134505
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“Exciton states and oscillator strength in two vertically coupled InP/InGaP quantum discs”. Tadić, M, Peeters FM, Journal of physics : condensed matter 16, 8633 (2004). http://doi.org/10.1088/0953-8984/16/47/015
Abstract: Quantum mechanical coupling and strain in two vertically arranged InP/InGaP quantum dots is studied as a function of the size of the dots and the spacer thickness. The strain distribution is determined by the continuum mechanical model, while the single-band effective-mass equation and the multiband k (.) p theory are employed to compute the conduction and valence band energy levels, respectively. The exciton states are obtained from an exact diagonalization approach, and we also compute the oscillator strength for recombination. We found that the light holes are confined by strain to the spacer, which is the reason that the hole states exhibit coupling at much larger distances as compared with the electrons. At small d, the doublet structure of the hole energy levels arises as a consequence of the relocation of the light hole from the matrix to the regions located-outside the stack, close to the dot-matrix interface. When d varies, the exciton ground state exhibits numerous anticrossings with other states, which are related to the changing spatial localization of the hole as a function of d. The oscillator strength of the exciton recombination is strongly reduced in a certain range of spacer thicknesses, which effectively turns a bright exciton state into a dark one. This effect is associated with anticrossings between exciton energy levels.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 13
DOI: 10.1088/0953-8984/16/47/015
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“Excitonic Aharonov-Bohm effect : unstrained versus strained type-I semiconductor nanorings”. Tadić, M, Čukarić, N, Arsoski V, Peeters FM, Physical review : B : condensed matter and materials physics 84, 125307 (2011). http://doi.org/10.1103/PhysRevB.84.125307
Abstract: We study how mechanical strain affects the magnetic field dependence of the exciton states in type-I semiconductor nanorings. Strain spatially separates the electron and hole in (In,Ga)As/GaAs nanorings which is beneficial for the occurrence of the excitonic Aharonov-Bohm (AB) effect. In narrow strained (In,Ga)As/GaAs nanorings the AB oscillations in the exciton ground-state energy are due to anticrossings with the first excited state. No such AB oscillations are found in unstrained GaAs/(Al,Ga)As nanorings irrespective of the ring width. Our results are obtained within an exact numerical diagonalization scheme and are shown to be accurately described by a two-level model with off-diagonal coupling t. The later transfer integral expresses the Coulomb coupling between states of electron-hole pairs. We also found that the oscillator strength for exciton recombination in (In,Ga)As/GaAs nanorings exhibits AB oscillations, which are superimposed on a linear increase with magnetic field. Our results agree qualitatively with recent experiments on the excitonic Aharonov-Bohm effect in type-I (In,Ga)As/GaAs nanorings.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.84.125307
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“Free-carrier effects in gallium nitride epilayers: Valence-band dispersion”. Shields PA, Nicholas RJ, Peeters FM, Beaumont B, Gibart P, Physical Review B 64, 155303 (2001). http://doi.org/10.1103/PhysRevB.64.081203
Abstract: The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magnetoexcitonic states in polarized interband magnetoreflectivity and is found to be strongly nonparabolic with a mass in the range 1.2-1.8m(e). It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at about an LO-phonon energy above the band gap and a strong nonparabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.64.081203
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“Ground-state energy of confined bosons in two dimensions”. Gonzalez A, Partoens B, Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 59, 1653 (1999). http://doi.org/10.1103/PhysRevB.59.1653
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.59.1653
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“Hall potentiometer in the ballistic regime”. Baelus BJ, Peeters FM, Applied physics letters 74, 1600 (1999). http://doi.org/10.1063/1.123629
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 13
DOI: 10.1063/1.123629
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“Hole subbands in freestanding nanowires : six-band versus eight-band k.p modelling”. Kishore VVR, Čukarić, N, Partoens B, Tadić, M, Peeters FM, Journal of physics : condensed matter 24, 135302 (2012). http://doi.org/10.1088/0953-8984/24/13/135302
Abstract: The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k.p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E-P) value.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 13
DOI: 10.1088/0953-8984/24/13/135302
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“Hydrogen impurities and native defects in CdO”. Amini MN, Saniz R, Lamoen D, Partoens B, Journal of applied physics 110, 063521 (2011). http://doi.org/10.1063/1.3641971
Abstract: We have used first-principles calculations based on density functional theory to study point defects in CdO within the local density approximation and beyond (LDA+U). Hydrogen interstitials and oxygen vacancies are found to act as shallow donors and can be interpreted as the cause of conductivity in CdO. Hydrogen can also occupy an oxygen vacancy in its substitutional form and also acts as a shallow donor. Similar to what was found for ZnO and MgO, hydrogen creates a multicenter bond with its six oxygen neighbors in CdO. The charge neutrality level for native defects and hydrogen impurities has been calculated. It is shown that in the case of native defects, it is not uniquely defined. Indeed, this level depends highly on the chemical potentials of the species and one can obtain different values for different end states in the experiment. Therefore, a comparison with experiment can only be made if the chemical potentials of the species in the experiment are well defined. However, for the hydrogen interstitial defect, since this level is independent of the chemical potential of hydrogen, one can obtain a unique value for the charge neutrality level. We find that the Fermi level stabilizes at 0.43 eV above the conduction band minimum in the case of the hydrogen interstitial defect, which is in good agreement with the experimentally reported value of 0.4 eV.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 13
DOI: 10.1063/1.3641971
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“Influence of impurities and surface defects on the flux-induced current in mesoscopic d-wave superconducting loops”. Zha G-Q, Milošević, MV, Zhou S-P, Peeters FM, Physical review : B : condensed matter and materials physics 84, 132501 (2011). http://doi.org/10.1103/PhysRevB.84.132501
Abstract: We investigated the magnetic flux dependence of the supercurrent in mesoscopic d-wave superconducting loops, containing impurities and surface defects, by numerically solving the Bogoliubovde Gennes equations self-consistently. In the presence of impurities, bound states arise close to the Fermi energy. In the case of a single impurity, the flux-induced current is found to be suppressed. This can be different when more impurities are introduced in the sample due to the quantum interference effect, which depends sensitively on the relative position between the impurities. We further analyze the effect of small surface defects at the inner or outer edge of the loop, and show that indentation and bulge defects have pronounced and different effects on the supercurrent.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.84.132501
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“Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells”. Brammertz G, Oueslati S, Buffiere M, Bekaert J, El Anzeery H, Messaoud KB, Sahayaraj S, Nuytten T, Koble C, Meuris M, Poortmans J;, IEEE journal of photovoltaics 5, 649 (2015). http://doi.org/10.1109/JPHOTOV.2014.2376053
Abstract: We have investigated different nonidealities in Cu2ZnSnSe4CdSZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorberbuffer heterojunction leading to a strong crossover behavior between dark and illuminated currentvoltage curves. In addition, a barrier of about 130 meV is present at the Moabsorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 3.712
Times cited: 13
DOI: 10.1109/JPHOTOV.2014.2376053
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“Magnetic flux periodicity in mesoscopic d-wave symmetric and asymmetric superconducting loops”. Zha G-Q, Milošević, MV, Zhou S-P, Peeters FM, Physical review : B : solid state 80, 144501 (2009). http://doi.org/10.1103/PhysRevB.80.144501
Abstract: The magnetic flux dependence of energy and supercurrent in mesoscopic d-wave symmetric and asymmetric superconducting loops is investigated by numerically solving the Bogoliubov-de Gennes equations self-consistently. For square loops, we find an hc/e-flux periodicity in energy and supercurrent and demonstrate that the flux periodicity is sensitive to the hole size and the superconducting pairing strength as well as temperature. The hc/2e-periodic behavior can be restored almost entirely when we displace the central hole sufficiently out of the center of the sample. In rectangular loops, the discrete current-carrying low-energy spectrum can exist for an odd winding number of the order parameter.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.80.144501
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“Magnetoresistance in multilayer fullerene spin valves: A first-principles study”. Çakir D, Otalvaro DM, Brocks G, Physical review : B : condensed matter and materials physics 90, 245404 (2014). http://doi.org/10.1103/PhysRevB.90.245404
Abstract: Carbon-based molecular semiconductors are explored for application in spintronics because their small spinorbit coupling promises long spin lifetimes. We calculate the electronic transport from first principles through spin valves comprising bi-and tri-layers of the fullerene molecules C-60 and C-70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C-70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C-60 layers. Exploiting a generalized Julliere model we can trace the differences in spin-dependent transport between C-60 and C-70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.90.245404
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“Microscopic model for multiple flux transitions in mesoscopic superconducting loops”. Vodolazov DY, Peeters FM, Hongisto TT, Arutyunov KY, Europhysics letters 75, 315 (2006). http://doi.org/10.1209/epl/i2006-10112-y
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.957
Times cited: 13
DOI: 10.1209/epl/i2006-10112-y
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“Multiband tunneling in trilayer graphene”. Van Duppen B, Sena SHR, Peeters FM, Physical review : B : condensed matter and materials physics 87, 195439 (2013). http://doi.org/10.1103/PhysRevB.87.195439
Abstract: The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for p-n and p-n-p junctions as realized by using a single gate (SG) or a double gate (DG). For the rhombohedral form, due to the chirality of the electrons, the Klein paradox is found at normal incidence for SG devices, while at high-energy interband scattering between additional propagation modes can occur. The electrons in Bernal ABA TLG can have a monolayer- or bilayer-like character when incident on a SG device. Using a DG, however, both propagation modes will couple by breaking the mirror symmetry of the system, which induces intermode scattering and resonances that depend on the width of the DG p-n-p junction. For ABC TLG the DG opens up a band gap which suppresses Klein tunneling. The DG induces also an unexpected asymmetry in the tunneling angle for single-valley electrons.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.87.195439
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“Selective suppression of Dresselhaus or Rashba spin-orbit coupling effects by the Zeeman interaction in quantum dots”. Szafran B, Nowak MP, Bednarek S, Chwiej T, Peeters FM, Physical review : B : solid state 79, 235303 (2009). http://doi.org/10.1103/PhysRevB.79.235303
Abstract: We study single- and two-electron parabolic quantum dots in the presence of linear Dresselhaus and Rashba spin-orbit interactions. Contributions of both types of spin-orbit coupling are investigated in the context of the spin polarization of the system at high magnetic fields. We demonstrate that for negative Landé factors the effect of the Dresselhaus coupling is suppressed at high magnetic field, which for structures without inversion asymmetry leads to a completely spin-polarized system and a strict antisymmetry of the wave functions with respect to the interchange of spatial-electron coordinates. For negative Landé factor the Rashba coupling is preserved at high field and consequently the spin polarization of the systems as well as the spatial antisymmetry of the two-electron wave function remain approximate.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PhysRevB.79.235303
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