Abstract: Magnetotransport in bilayer graphene in the presence of a weak and periodic potential is investigated in the presence of a perpendicular magnetic field B. The modulation broadens the Landau levels into bands and for weak magnetic fields leads to the well-known Weiss oscillations in their bandwidth and their transport coefficients at very low B and to the Shubnikov-de Haas oscillations at larger B. The amplitude of the Weiss oscillations is severely reduced if the periodic potentials applied to the two layers oscillate out of phase. We also contrast some results with those corresponding to single-layer graphene. Relative to them the flat-band condition and the oscillation amplitude differ substantially, due to the interlayer coupling, and agree only when this coupling is extremely weak. We further show that the Hall conductivity exhibits the well-known steps at half-integer and integer multiples of 4e(2)/h in single-layer and bilayer graphene, respectively, even for very weak magnetic fields. The results are pertinent to weak and periodic corrugations when the potential modulation dominates the strain-induced magnetic modulation.

Abstract: We numerically investigate the spin-orbit (SO) coupling effect on the magnetic flux evolution of energy and supercurrent in mesoscopic d-wave superconducting loops by solving the spin-generalized Bogoliubov-de Gennes equations self-consistently. It is found that the energy spectrum splits when the SO interaction is involved and the Majorana zero mode can be realized in the [100] edges of square systems for an appropriate SO coupling strength. Superconducting phase transitions appear when the energy gap closes, accompanied by energy jumps between different energy parabolas in the ground state, which provides a possible mechanism to support fractional flux periodicity of supercurrent. Moreover, in the case of rectangular loops with SO coupling, the jumps of the ground-state energy gradually disappear by increasing the ratio of length to height of the sample, and a paramagnetic response with opposite direction of the screening current around zero flux value can occur in such systems.

Abstract: The coupling of angstrom-sized electron probes with spin-polarized electronic transitions shows that the inelastically scattered probe electron is in a mixed state containing electron vortices with nonzero orbital angular momentum. These electrons create an asymmetric intensity distribution in energy filtered diffraction patterns, giving access to maps of the magnetic moments with atomic resolution. A feasibility experiment shows evidence of the predicted effect. Potential applications are column-by-column maps of magnetic ordering, and the creation of angstrom-sized free electrons with orbital angular momentum by inelastic scattering in a thin ferromagnetic foil.

Abstract: Nanoscale corrugation is a fundamental property of graphene arising from its low-dimensional nature. It places a fundamental limit to the conductivity of graphene and influences its properties. However the degree of the influence of the corrugation has not been well established because of the little knowledge about its spectrum in suspended graphene. We present a transmission electron microscopy technique that enables us to measure the average corrugation height and length. We applied the technique also to measure the temperature dependence of the corrugation. The difference in corrugation between suspended and supported graphene has been illustrated.

Abstract: A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246 and 232 K under heating and cooling, respectively. The phase fronts between the austenite and martensite regions of the sample are weakly mobile with a power-law resonance under external stress fields. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and cannot be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was studied by dynamical mechanical analysis (DMA) and resonant ultrasound spectroscopy. The remnant strain, storage modulus, and internal friction were recorded simultaneously for different applied forces in DMA. With increasing forces, the remnant strain increases monotonously while the internal friction peak height shows a minimum at 300 mN. Transmission electron microscopy shows that the pinning is generated by dislocations which are inherited from the austenite phase.

Abstract: Germanium combined with high-κ dielectrics is investigated for the next generations of CMOS devices. Therefore, we study reaction mechanisms for Al2O3 atomic layer deposition on sulfur passivated Ge using calculations based on density functional theory and total reflection X-ray fluorescence (TXRF). TXRF indicates 6 S/nm2 and 4 Al/nm2 after the first TMA/H2O reaction cycle, and growth inhibition from the second reaction cycle on. Calculations are performed on molecular clusters representing −GeSH surface sites. The calculations confirm that the TMA reaction does not affect the S content. On fully SH-terminated Ge, TMA favorably reacts with up to three −GeSH sites, resulting in a near tetrahedral Al coordination. Electron deficient structures with a GeS site shared between two Al atoms are proposed. The impact of the cluster size on the structures and reaction energetics is systematically investigated.