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Resistivity scaling and electron relaxation times in metallic nanowires”. Moors K, Sorée B, Tokei Z, Magnus W, Journal of applied physics 116, 063714 (2014). http://doi.org/10.1063/1.4892984
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Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation”. Kao K-H, Verhulst AS, Van de Put M, Vandenberghe WG, Sorée B, Magnus W, De Meyer K, Journal of applied physics 115, 044505 (2014). http://doi.org/10.1063/1.4862806
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Zener tunneling in semiconductors under nonuniform electric fields”. Vandenberghe W, Sorée B, Magnus W, Groeseneken G, Journal of applied physics 107, 054520 (2010). http://doi.org/10.1063/1.3311550
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Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors”. Agarwal T, Sorée B, Radu I, Raghavan P, Fiori G, Iannaccone G, Thean A, Heyns M, Dehaene W, Applied physics letters 108, 023506 (2016). http://doi.org/10.1063/1.4939933
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Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put M, Sorée B, Magnus W, Mocuta A, Collaert N, Thean A, Groeseneken G, Journal of applied physics 118, 134502 (2015). http://doi.org/10.1063/1.4931890
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Inter-ribbon tunneling in graphene: An atomistic Bardeen approach”. Van de Put ML, Vandenberghe WG, Sorée B, Magnus W, Fischetti MV, Journal of applied physics 119, 214306 (2016). http://doi.org/10.1063/1.4953148
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Modeling surface roughness scattering in metallic nanowires”. Moors K, Sorée B, Magnus W, Journal of applied physics 118, 124307 (2015). http://doi.org/10.1063/1.4931573
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Skyrmion-induced bound states on the surface of three-dimensional topological insulators”. Andrikopoulos D, Sorée B, De Boeck J, Journal of applied physics 119, 193903 (2016). http://doi.org/10.1063/1.4950759
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Can p-channel tunnel field-effect transistors perform as good as n-channel?”.Verhulst AS, Verreck D, Pourghaderi MA, Van de Put M, Sorée B, Groeseneken G, Collaert N, Thean AV-Y, Applied physics letters 105, 043103 (2014). http://doi.org/10.1063/1.4891348
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Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides”. Mohammed M, Verhulst AS, Verreck D, Van de Put M, Simoen E, Sorée B, Kaczer B, Degraeve R, Mocuta A, Collaert N, Thean A, Groeseneken G, Journal of applied physics 120, 245704 (2016). http://doi.org/10.1063/1.4972482
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Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors”. Beckers A, Thewissen M, Sorée B, Journal of applied physics 124, 144304 (2018). http://doi.org/10.1063/1.5043543
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Resistivity scaling model for metals with conduction band anisotropy”. De Clercq M, Moors K, Sankaran K, Pourtois G, Dutta S, Adelmann C, Magnus W, Sorée B, Physical review materials 2, 033801 (2018). http://doi.org/10.1103/PHYSREVMATERIALS.2.033801
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Spectral force approach to solve the time-dependent Wigner-Liouville equation”. Van de Put M, Thewissen M, Magnus W, Sorée B, Sellier JM, 2014 International Workshop On Computational Electronics (iwce) (2014)
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15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors”. Verreck D, Van de Put ML, Verhulst AS, Sorée B, Magnus W, Dabral A, Thean A, Groeseneken G, 18th International Workshop On Computational Electronics (iwce 2015) (2015). http://doi.org/10.1109/IWCE.2015.7301988
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Analytic solution of Ando's surface roughness model with finite domain distribution functions”. Moors K, Sorée B, Magnus W, 18th International Workshop On Computational Electronics (iwce 2015) (2015)
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Modeling and tackling resistivity scaling in metal nanowires”. Moors K, Sorée B, Magnus W, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC , 222 (2015)
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Modeling of inter-ribbon tunneling in graphene”. Van de Put ML, Vandenberghe WG, Magnus W, Sorée B, Fischetti MV, 18th International Workshop On Computational Electronics (iwce 2015) (2015)
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Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Sorée B, Collaert N, Mocuta A, Thean A, Groeseneken G, Solid-State Device Research (ESSDERC), European Conference T2 –, 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND , 412 (2016)
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Perspective of tunnel-FET for future low-power technology nodes”. Verhulst AS, Verreck D, Smets Q, Kao K-H, Van de Put M, Rooyackers R, Sorée B, Vandooren A, De Meyer K, Groeseneken G, Heyns MM, Mocuta A, Collaert N, Thean AV-Y, 2014 Ieee International Electron Devices Meeting (iedm) (2014)
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Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put ML, Sorée B, Magnus W, Collaert N, Mocuta A, Groeseneken G, Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) , 29 (2017)
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Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs”. Bizindavyi J, Verhulst AS, Sorée B, Groeseneken G, Conference digest T2 –, 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA (2018)
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Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes”. Bizindavyi J, Verhulst AS, Smets Q, Verreck D, Sorée B, Groeseneken G, IEEE journal of the Electron Devices Society 6, 633 (2018). http://doi.org/10.1109/JEDS.2018.2834825
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Exchange-driven magnetic logic”. Zografos O, Manfrini M, Vaysset A, Sorée B, Ciubotaru F, Adelmann C, Lauwereins R, Raghavan P, Radu IP, Scientific reports 7, 12154 (2017). http://doi.org/10.1038/S41598-017-12447-8
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Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation”. Dutta S, Zografos O, Gurunarayanan S, Radu I, Sorée B, Catthoor F, Naeemi A, Scientific reports 7, 17866 (2017). http://doi.org/10.1038/S41598-017-17954-2
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Skyrmion electrical detection with the use of three-dimensional Topological Insulators/Ferromagnetic bilayers”. Andrikopoulos D, Sorée B, Scientific reports 7, 17871 (2017). http://doi.org/10.1038/S41598-017-17727-X
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The junctionless nanowire transistor”. Sorée B, Pham A-T, Sels D, Magnus W Pan Stanford, S.l., page ? (2011).
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Transport in nanostructures”. Magnus W, Carrillo-Nunez H, Sorée B Pan Stanford, S.l. (2011).
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2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors”. Sels D, Sorée B, Groeseneken G, 14th International Workshop on Computational Electronics, 85 (2010)
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