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Author Blank, D.H.A.; Rijnders, A.J.H.M.; Verhoeven, M.A.J.; Bergs, R.M.H.; Rogalla, H.; Verbist, K.; Lebedev, O.; Van Tendeloo, G. doi  openurl
  Title Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy Type A1 Journal article
  Year 1997 Publication Journal of alloys and compounds T2 – Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France Abbreviated Journal J Alloy Compd  
  Volume 251 Issue 1-2 Pages 206-208  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier Science Place of Publication Lausanne Editor  
  Language Wos A1997XM34000046 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.133 Times cited Open Access  
  Notes Approved Most recent IF: 3.133; 1997 IF: 1.035  
  Call Number UA @ lucian @ c:irua:95868 Serial 310  
Permanent link to this record
 

 
Author Razdobarin, A.G.; Mukhin, E.E.; Semenov, V.V.; Yu.Tolstyakov, S.; Kochergin, M.M.; Kurskiev, G.S.; Podushnikova, K.A.; Kirilenko, D.A.; Sitnikova, A.A.; Gorodetsky, А.Е.; Bukhovets, V.L.; Zalavutdinov, R.K.; Zakharov, А.P.; Arkhipov, I.I.; Voitsenya, V.S.; Bondarenko, V.N.; Konovalov, V.G.; Ryzhkov, I.V.; pdf  doi
openurl 
  Title High reflective mirrors for in-vessel applications in ITER Type A1 Journal article
  Year 2010 Publication Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment Abbreviated Journal Nucl Instrum Meth A  
  Volume 623 Issue 2 Pages 809-811  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure and surface morphology of aluminum and silver mirrors covered with protective dielectric oxide layer were studied by means of TEM and SEM. The presence of needle-like pores throughout the thickness of the ZrO(2) film and bubble-like pores in Al(2)O(3) was observed. The test for resistivity to deuterium ion bombardment shows that the exposition to a fluence of similar to 2 x 10(20) ions/cm(2) with the ion energy of 40-50 eV results in appearance of blisters on the surface of mirrors covered wit h Al(2)O(3). For the mirrors protected with ZrO(2) no noticeable changes in surface morphology and reflectivity were found even after order of magnitude higher ion fluence. The effect of different porous structures on blistering phenomena is discussed. (C) 2010 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier Science Place of Publication Amsterdam Editor  
  Language Wos 000284343600041 Publication Date 2010-04-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.362 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.362; 2010 IF: 1.142  
  Call Number UA @ lucian @ c:irua:95545 Serial 1442  
Permanent link to this record
 

 
Author Antipov, E.V.; Putilin, S.N.; Shpanchenko, R.V.; Alyoshin, V.A.; Rozova, M.G.; Abakumov, A.M.; Mikhailova, D.A.; Balagurov, A.M.; Lebedev, O.; Van Tendeloo, G. doi  openurl
  Title Structural features, oxygen and fluorine doping in Cu-based superconductors Type A1 Journal article
  Year 1997 Publication Physica: C : superconductivity T2 – International Conference on Materials and Mechanisms of, Superconductivity – High Temperature Superconductors V, Feb. 28-Mar. 04, 1997, Beijing, Peoples R. China Abbreviated Journal Physica C  
  Volume 282 Issue Part 1 Pages 61-64  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The variation of structures and superconducting properties by changing extra oxygen or fluorine atoms concentration in Hg-based Cu mixed oxides and YBa2Cu3O6+delta was studied. The data obtained by NPD study of Hg-1201 can be considered as an evidence of the conventional oxygen doping mechanism with 2 delta holes per (CuO2) layer. The extra oxygen atom was found to be located in the middle of the Hg mesh only. Different formal charges of oxygen and fluorine inserted into reduced 123 structure results in its distinct variations. The fluorine incorporation into strongly reduced YBa2Cu3O6+delta causes a significant structural rearrangement and the formation of a new compound with a composition close to YBa2Cu3O6F2 (tetragonal alpha = 3.87 Angstrom and c approximate to 13 Angstrom), which structure was deduced from the combined results of X-ray diffraction, electron diffraction and high resolution electron microscopy. Fluorination treatment by XeF2 of nonsuperconducting 123 samples causes an appearance of bulk superconductivity with T-c up to 94K.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier Science Place of Publication Amsterdam Editor  
  Language Wos A1997XZ90400019 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.404; 1997 IF: 2.199  
  Call Number UA @ lucian @ c:irua:95866 Serial 3237  
Permanent link to this record
 

 
Author de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. pdf  doi
openurl 
  Title Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM Type A1 Journal article
  Year 2001 Publication Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY Abbreviated Journal Physica B  
  Volume 308 Issue Pages 294-297  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000173660100073 Publication Date 2002-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.386 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.386; 2001 IF: 0.663  
  Call Number UA @ lucian @ c:irua:103389 Serial 345  
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. doi  openurl
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B  
  Volume 112 Issue 1-4 Pages 325-329  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100069 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95886 Serial 1742  
Permanent link to this record
 

 
Author de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. doi  openurl
  Title Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks Type A1 Journal article
  Year 2003 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 203 Issue Pages 523-526  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000180527300119 Publication Date 2002-12-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 15 Open Access  
  Notes Approved Most recent IF: 3.387; 2003 IF: 1.284  
  Call Number UA @ lucian @ c:irua:51975 Serial 1743  
Permanent link to this record
 

 
Author Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; pdf  doi
openurl 
  Title Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry Type A1 Journal article
  Year 1993 Publication Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE Abbreviated Journal Appl Surf Sci  
  Volume 63 Issue 1-4 Pages 45-51  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1993KF03400009 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 13 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:104539 Serial 2932  
Permanent link to this record
 

 
Author Berdiyorov, G.R.; Madjet, M.E.; El-Mellouhi, F.; Peeters, F.M. pdf  doi
openurl 
  Title Effect of crystal structure on the electronic transport properties of the organometallic perovskite CH3NH3PbI3 Type A1 Journal article
  Year 2016 Publication Solar energy materials and solar cells T2 – 2nd International Renewable and Sustainable Energy Conference (IRSEC), OCT 17-19, 2014, Ouarzazate, MOROCCO Abbreviated Journal Sol Energ Mat Sol C  
  Volume 148 Issue 148 Pages 60-66  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Using density-functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of the crystal lattice structure of organometallic perovskite CH3NH3PbI3 on its electronic transport properties. Both dispersive interactions and spin-orbit coupling are taken into account in describing structural and electronic properties of the system. We consider two different phases of the material, namely the orthorhombic and cubic lattice structures, which are energetically stable at low (< 160 K) and high (> 330 K) temperatures, respectively. The sizable geometrical differences between the two structures in term of lattice parameters, PbI6 octahedral tilts, rotation and deformations, have considerable impact on the transport properties of the material. For example, at zero bias and for all considered electron energies, the cubic phase has a larger transmission than the orthorhombic one, although both show similar electronic densities of states. Depending on the applied voltage, the current in the cubic system can be several orders of magnitude larger as compared to the one obtained for the orthorhombic sample. We attribute this enhancement in the transmission to the presence of extended states in the cubic phase due to the symmetrically shaped and ordered PbI6 octaherdra. (C) 2015 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000371944500011 Publication Date 2015-11-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0927-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.784 Times cited 16 Open Access  
  Notes ; ; Approved Most recent IF: 4.784  
  Call Number UA @ lucian @ c:irua:133151 Serial 4163  
Permanent link to this record
 

 
Author Berdiyorov, G.R.; El-Mellouhi, F.; Madjet, M.E.; Alharbi, F.H.; Peeters, F.M.; Kais, S. pdf  doi
openurl 
  Title Effect of halide-mixing on the electronic transport properties of organometallic perovskites Type A1 Journal article
  Year 2016 Publication Solar energy materials and solar cells T2 – 2nd International Renewable and Sustainable Energy Conference (IRSEC), OCT 17-19, 2014, Ouarzazate, MOROCCO Abbreviated Journal Sol Energ Mat Sol C  
  Volume 148 Issue 148 Pages 2-10  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Using density-functional theory in combination with the nonequilibrium Green's function formalism, we study the effect of iodide/chloride and iodide/bromide mixing on the electronic transport in lead based organometallic perovskite CH3NH3PbI3, which is known to be an effective tool to tune the electronic and optical properties of such materials. We found that depending on the level and position of the halide mixing, the electronic transport can be increased by more than a factor of 4 for a given voltage biasing. The largest current is observed for small concentration of bromide substitutions located at the equatorial sites. However, full halide substitution has a negative effect on the transport properties of this material: the current drops by an order of magnitude for both CH3NH3PbCl3 and CH3NH3PbBr3 samples. (C) 2015 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000371944500002 Publication Date 2015-12-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0927-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.784 Times cited 23 Open Access  
  Notes ; ; Approved Most recent IF: 4.784  
  Call Number UA @ lucian @ c:irua:133150 Serial 4165  
Permanent link to this record
 

 
Author Gorle, C.; Garcia Sánchez, C.; Iaccarino, G. pdf  doi
openurl 
  Title Quantifying inflow and RANS turbulence model form uncertainties for wind engineering flows Type A1 Journal article
  Year 2015 Publication Journal of wind engineering and industrial aerodynamics T2 – 6th International Symposium on Computational Wind Engineering (CWE), JUN 08-12, 2014, Hamburg, GERMANY Abbreviated Journal J Wind Eng Ind Aerod  
  Volume 144 Issue 144 Pages 202-212  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Reynolds-averaged Navier-Stokes (RANS) simulations are often used in the wind engineering practice for the analysis of turbulent bluff body flows. An approach that allows identifying the uncertainty related to the use of reduced-order turbulence models in RANS simulations would significantly increase the confidence in the use of simulation results as a basis for design decisions. In the present study we apply a strategy that enables quantifying these uncertainties by introducing perturbations in the Reynolds stress tensor to simulations of the flow in downtown Oklahoma City. The method is combined with a framework to quantify uncertainties in the inflow wind direction and intensity, and the final result of the UQ approach is compared to field measurement data for the velocity at 13 locations in the downtown area. (C) 2015 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos 000360874900023 Publication Date 2015-08-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-6105 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.049 Times cited 22 Open Access  
  Notes Approved Most recent IF: 2.049; 2015 IF: 1.414  
  Call Number UA @ lucian @ c:irua:127843 Serial 4230  
Permanent link to this record
 

 
Author Razdobarin, A.G.; Mukhin, E.E.; Semenov, V.V.; Tolstyakov, S.Y.; Kochergin, M.M.; Kurskiev, G.S.; Podushnikova, K.A.; Kirilenko, D.A.; Sitnikova, A.A.; Konovalov, V.G.; Solodovchenko, S.I.; Nekhaieva, O.M.; Skorik, O.A.; Bondarenko, V.N.; Voitsenya, V.S.; pdf  doi
openurl 
  Title Diagnostic mirrors with transparent protection layer for ITER Type A1 Journal article
  Year 2011 Publication Fusion engineering and design Abbreviated Journal Fusion Eng Des  
  Volume 86 Issue 6-8 Pages 1341-1344  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Fast degradation of in-vessel optics is one of the most serious problems for all optical diagnostics in ITER. To provide the resistance to mechanical and thermal stresses along with a high stability of optical characteristics under deposition-dominated conditions we suggest using high-reflective metallic (Ag or Al) film mirrors coated on silicon substrate and protected with thin oxide film in the divertor Thomson Scattering (TS) diagnostics. The mirrors coated with Al2O3 and ZrO2 films were tested under irradiation by deuterium ions. The experimental results on the oxide films sputtering are discussed in the context of their applicability for the first mirror protection in ITER.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science sa Place of Publication Amsterdam Editor  
  Language Wos 000297426500203 Publication Date 2011-03-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0920-3796; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.319 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.319; 2011 IF: 1.490  
  Call Number UA @ lucian @ c:irua:93631 Serial 686  
Permanent link to this record
 

 
Author Schryvers, D.; Cao, S.; Pourbabak; Shi, H.; Lu doi  openurl
  Title Recent EM investigations on nano-and micro-defect structures in SMAs Type A1 Journal article
  Year 2013 Publication Journal of alloys and compounds Abbreviated Journal J Alloy Compd  
  Volume 577 Issue s:[1] Pages S705-S709  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The present contribution reviews some recent electron microscopy investigations on different shape memory systems in which a variety of nano- and micro-defect structures play an essential role in the functional behaviour of the material. (NiTi3)-Ti-4 precipitates in Ni-Ti are a well-known example for which the focus is now on the 3D configurations, in Ni-Ti-Nb Nb-rich nanoprecipitates are thought to have a large impact on the hysteresis, in Co-Ni-Al an Al-enriched zone nearby the y'-precipitates yields a small sandwiched austenite while some first signs of quasidynamical lattice deformation in non-frozen Ni-Ti strain glass are measured by Cs-aberration-corrected transmission electron microscopy. (C) 2011 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier science sa Place of Publication Lausanne Editor  
  Language Wos 000329891400146 Publication Date 2011-11-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.133 Times cited 7 Open Access  
  Notes Approved Most recent IF: 3.133; 2013 IF: 2.726  
  Call Number UA @ lucian @ c:irua:114832 Serial 2839  
Permanent link to this record
 

 
Author Zhang, H.; Wang, W.; Li, X.; Han, L.; Yan, M.; Zhong, Y.; Tu, X. pdf  url
doi  openurl
  Title Plasma activation of methane for hydrogen production in a N2 rotating gliding arc warm plasma : a chemical kinetics study Type A1 Journal article
  Year 2018 Publication Chemical engineering journal Abbreviated Journal Chem Eng J  
  Volume 345 Issue 345 Pages 67-78  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, a chemical kinetics study on methane activation for hydrogen production in a warm plasma, i.e., N-2 rotating gliding arc (RGA), was performed for the first time to get new insights into the underlying reaction mechanisms and pathways. A zero-dimensional chemical kinetics model was developed, which showed a good agreement with the experimental results in terms of the conversion of CH4 and product selectivities, allowing us to get a better understanding of the relative significance of various important species and their related reactions to the formation and loss of CH4, H-2, and C2H2 etc. An overall reaction scheme was obtained to provide a realistic picture of the plasma chemistry. The results reveal that the electrons and excited nitrogen species (mainly N-2(A)) play a dominant role in the initial dissociation of CH4. However, the H atom induced reaction CH4+ H -> CH3+ H-2, which has an enhanced reaction rate due to the high gas temperature (over 1200 K), is the major contributor to both the conversion of CH4 and H-2 production, with its relative contributions of > 90% and > 85%, respectively, when only considering the forward reactions. The coexistence and interaction of thermochemical and plasma chemical processes in the rotating gliding arc warm plasma significantly enhance the process performance. The formation of C-2 hydrocarbons follows a nearly one-way path of C2H6 -> C2H4 -> C2H2, explaining why the selectivities of C-2 products decreased in the order of C2H2 > C2H4 > C2H6.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Elsevier Sequoia Place of Publication Lausanne Editor  
  Language Wos 000430696500008 Publication Date 2018-03-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1385-8947; 1873-3212 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 6.216 Times cited 25 Open Access OpenAccess  
  Notes Approved Most recent IF: 6.216  
  Call Number UA @ lucian @ c:irua:151450 Serial 5036  
Permanent link to this record
 

 
Author van Vaeck, L.; van Espen, P.; Gijbels, R.; Baykut, G.; Laukien, F.H. doi  openurl
  Title A new electrostatic transfer line for improved transmission in Fourier transform laser microprobe mass spectrometry with external ion source Type A1 Journal article
  Year 2000 Publication European mass spectrometry Abbreviated Journal Eur Mass Spectrom  
  Volume 6 Issue Pages 277-287  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Chemometrics (Mitac 3)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (up) I.M. Place of Publication Chichester Editor  
  Language Wos 000165327900008 Publication Date 2007-12-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1356-1049; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 10 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:34088 Serial 2312  
Permanent link to this record
 

 
Author Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. url  doi
openurl 
  Title Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes Type A1 Journal article
  Year 2018 Publication IEEE journal of the Electron Devices Society Abbreviated Journal Ieee J Electron Devi  
  Volume 6 Issue 1 Pages 633-641  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature.  
  Address  
  Corporate Author Thesis  
  Publisher (up) IEEE, Electron Devices Society Place of Publication New York, N.Y. Editor  
  Language Wos 000435505000013 Publication Date 2018-05-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2168-6734 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.141 Times cited 5 Open Access  
  Notes ; J. Bizindavyi gratefully acknowledges FWO-Vlaanderen for a Strategic Basic Research PhD fellowship. ; Approved Most recent IF: 3.141  
  Call Number UA @ lucian @ c:irua:152097UA @ admin @ c:irua:152097 Serial 5014  
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. pdf  doi
openurl 
  Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond  
  Volume 11 Issue 11 Pages 1194-1202  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Inst Materials Place of Publication London Editor  
  Language Wos A1995TQ95100016 Publication Date 2014-01-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.995 Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95911 Serial 2654  
Permanent link to this record
 

 
Author Sieger, M.; Pahlke, P.; Ottolinger, R.; Stafford, B.H.; Lao, M.; Meledin, A.; Bauer, M.; Eisterer, M.; Van Tendeloo, G.; Schultz, L.; Nielsch, K.; Hühne, R. url  doi
openurl 
  Title Influence of substrate tilt angle on the incorporation of BaHfO3 in thick YBa2Cu3O7-δ films Type A1 Journal article
  Year 2016 Publication IEEE transactions on applied superconductivity Abbreviated Journal  
  Volume 27 Issue 27 Pages 1-4  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High critical current densities can be realized in high-temperature superconductors such as YBa2Cu3O7-δ (YBCO) by controlling density, shape, size and direction of a secondary phase. Whereas the dependence on the growth rate and deposition temperature has been widely studied as key parameters for nano-engineering the pinning landscape, the vicinal tilt of the substrate surface might have an additional influence. Therefore, we deposited 6 mol% BaHfO3 (BHO) doped YBCO on SrTiO3 (STO) substrates with vicinal angles α between 0° and 40° to identify the influence of the tilt on the growth mode of BHO. An undisturbed epitaxial growth of the superconductor as well as an epitaxial integration of the BHO phase in the YBCO matrix is observed for all vicinal angles investigated. The critical temperature is constant up to α = 20°, whereas the self-field critical current density at 77 K starts to decrease above 10°. A detailed structural analysis of the film cross sections showed that the growth mode of BHO changes already for a vicinal tilt of 2° from a pure c-axis oriented growth to a layered structure with BHO aligned parallel to the YBCO ab-plane. We identified a strong influence of such a microstructure on the current flow in BHO doped YBCO films on STO substrates as well as on MgO based coated conductors prepared by inclined substrate deposition  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Electrical and Electronics Engineers (IEEE) Place of Publication Editor  
  Language Wos 000418469400001 Publication Date 2016-11-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes This work was supported by EUROTAPES, a collaborative project funded by the European Commission’s Seventh Framework Program (FP7 / 2007 – 2013) under Grant Agreement n.280432.The authors would like to thank R. Nast, M. Reitner, M. Kühnel, U. Fiedler and J. Scheiter for technical assistance. Approved Most recent IF: NA  
  Call Number EMAT @ emat @ Sieger_2016a c:irua:138603 Serial 4317  
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Author Kolev, S.; Bogaerts, A. pdf  url
doi  openurl
  Title A 2D model for a gliding arc discharge Type A1 Journal article
  Year 2015 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 24 Issue 24 Pages 015025  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this study we report on a 2D fluid model of a gliding arc discharge in argon. Despite the 3D nature of the discharge, 2D models are found to be capable of providing very useful information about the operation of the discharge. We employ two modelsan axisymmetric and a Cartesian one. We show that for the considered experiment and the conditions of a low current arc (around 30 mA) in argon, there is no significant heating of the cathode surface and the discharge is sustained by field electron emission from the cathode accompanied by the formation of a cathode spot. The obtained discharge power and voltage are relatively sensitive to the surface properties and particularly to the surface roughness, causing effectively an amplification of the normal electric field. The arc body and anode region are not influenced by this and depend mainly on the current value. The gliding of the arc is modelled by means of a 2D Cartesian model. The arcelectrode contact points are analysed and the gliding mechanism along the electrode surface is discussed. Following experimental observations, the cathode spot is simulated as jumping from one point to another. A complete arc cycle is modelled from initial ignition to arc decay. The results show that there is no interaction between the successive gliding arcs.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000348298200026 Publication Date 2014-12-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 34 Open Access  
  Notes Approved Most recent IF: 3.302; 2015 IF: 3.591  
  Call Number c:irua:122538 c:irua:122538 c:irua:122538 c:irua:122538 Serial 3  
Permanent link to this record
 

 
Author Bultinck, E.; Bogaerts, A. pdf  doi
openurl 
  Title Characterization of an Ar/O2 magnetron plasma by a multi-species Monte Carlo model Type A1 Journal article
  Year 2011 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 20 Issue 4 Pages 045013-045013,12  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A combined Monte Carlo (MC)/analytical surface model is developed to study the plasma processes occurring during the reactive sputter deposition of TiOx thin films. This model describes the important plasma species with a MC approach (i.e. electrons, Ar+ ions, {\rm O}_2  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000295829800015 Publication Date 2011-06-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 7 Open Access  
  Notes Approved Most recent IF: 3.302; 2011 IF: 2.521  
  Call Number UA @ lucian @ c:irua:89732 Serial 316  
Permanent link to this record
 

 
Author Bogaerts, A. doi  openurl
  Title Comprehensive modelling network for dc glow discharges in argon Type A1 Journal article
  Year 1999 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 8 Issue Pages 210-229  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000080660600004 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 27 Open Access  
  Notes Approved Most recent IF: 3.302; 1999 IF: 2.038  
  Call Number UA @ lucian @ c:irua:24129 Serial 451  
Permanent link to this record
 

 
Author Tinck, S.; Bogaerts, A. doi  openurl
  Title Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition Type A1 Journal article
  Year 2011 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 20 Issue 1 Pages 015008-015008,10  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper, an O2 inductively coupled plasma used for plasma enhanced atomic layer deposition of Al2O3 thin films is investigated by means of modeling. This work intends to provide more information about basic plasma properties such as species densities and species fluxes to the substrate as a function of power and pressure, which might be hard to measure experimentally. For this purpose, a hybrid model developed by Kushner et al is applied to calculate the plasma characteristics in the reactor volume for different chamber pressures ranging from 1 to 10 mTorr and different coil powers ranging from 50 to 500 W. Density profiles of the various oxygen containing plasma species are reported as well as fluxes to the substrate under various operating conditions. Furthermore, different orientations of the substrate, which can be placed vertically or horizontally in the reactor, are taken into account. In addition, special attention is paid to the recombination process of atomic oxygen on the different reactor walls under the stated operating conditions. From this work it can be concluded that the plasma properties change significantly in different locations of the reactor. The plasma density near the cylindrical coil is high, while it is almost negligible in the neighborhood of the substrate. Ion and excited species fluxes to the substrate are found to be very low and negligible. Finally, the orientation of the substrate has a minor effect on the flux of O2, while it has a significant effect on the flux of O. In the horizontal configuration, the flux of atomic oxygen can be up to one order of magnitude lower than in the vertical configuration.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000286592200009 Publication Date 2011-01-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 11 Open Access  
  Notes Approved Most recent IF: 3.302; 2011 IF: 2.521  
  Call Number UA @ lucian @ c:irua:85285 Serial 467  
Permanent link to this record
 

 
Author Paulussen, S.; Verheyde, B.; Tu, X.; De Bie, C.; Martens, T.; Petrovic, D.; Bogaerts, A.; Sels, B. pdf  doi
openurl 
  Title Conversion of carbon dioxide to value-added chemicals in atmospheric pressure dielectric barrier discharges Type A1 Journal article
  Year 2010 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 19 Issue 3 Pages 034015,1-034015,6  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The aim of this work consists of the evaluation of atmospheric pressure dielectric barrier discharges for the conversion of greenhouse gases into useful compounds. Therefore, pure CO2 feed flows are administered to the discharge zone at varying discharge frequency, power input, gas temperature and feed flow rates, aiming at the formation of CO and O2. The discharge obtained in CO2 is characterized as a filamentary mode with a microdischarge zone in each half cycle of the applied voltage. It is shown that the most important parameter affecting the CO2-conversion levels is the gas flow rate. At low flow rates, both the conversion and the CO-yield are significantly higher. In addition, also an increase in the gas temperature and the power input give rise to higher conversion levels, although the effect on the CO-yield is limited. The optimum discharge frequency depends on the power input level and it cannot be unambiguously stated that higher frequencies give rise to increased conversion levels. A maximum CO2 conversion of 30% is achieved at a flow rate of 0.05 L min−1, a power density of 14.75 W cm−3 and a frequency of 60 kHz. The most energy efficient conversions are achieved at a flow rate of 0.2 L min−1, a power density of 11 W cm−3 and a discharge frequency of 30 kHz.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000277982800016 Publication Date 2010-05-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 116 Open Access  
  Notes Approved Most recent IF: 3.302; 2010 IF: 2.218  
  Call Number UA @ lucian @ c:irua:82408 Serial 512  
Permanent link to this record
 

 
Author De Bie, C.; Martens, T.; van Dijk, J.; Paulussen, S.; Verheyde, B.; Corthals, S.; Bogaerts, A. pdf  doi
openurl 
  Title Dielectric barrier discharges used for the conversion of greenhouse gases: modeling the plasma chemistry by fluid simulations Type A1 Journal article
  Year 2011 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 20 Issue 2 Pages 024008,1-024008,11  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The conversion of methane to value-added chemicals and fuels is considered to be one of the challenges of the 21st century. In this paper we study, by means of fluid modeling, the conversion of methane to higher hydrocarbons or oxygenates by partial oxidation with CO2 or O2 in a dielectric barrier discharge. Sixty-nine different plasma species (electrons, ions, molecules, radicals) are included in the model, as well as a comprehensive set of chemical reactions. The calculation results presented in this paper include the conversion of the reactants and the yields of the reaction products as a function of residence time in the reactor, for different gas mixing ratios. Syngas (i.e. H2 + CO) and higher hydrocarbons (C2Hx) are typically found to be important reaction products.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000290719900009 Publication Date 2011-04-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 38 Open Access  
  Notes Approved Most recent IF: 3.302; 2011 IF: 2.521  
  Call Number UA @ lucian @ c:irua:87868 Serial 689  
Permanent link to this record
 

 
Author Peerenboom, K.; Parente, A.; Kozák, T.; Bogaerts, A.; Degrez, G. pdf  url
doi  openurl
  Title Dimension reduction of non-equilibrium plasma kinetic models using principal component analysis Type A1 Journal article
  Year 2015 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 24 Issue 24 Pages 025004  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The chemical complexity of non-equilibrium plasmas poses a challenge for plasma modeling because of the computational load. This paper presents a dimension reduction method for such chemically complex plasmas based on principal component analysis (PCA). PCA is used to identify a low-dimensional manifold in chemical state space that is described by a small number of parameters: the principal components. Reduction is obtained since continuity equations only need to be solved for these principal components and not for all the species. Application of the presented method to a CO2 plasma model including state-to-state vibrational kinetics of CO2 and CO demonstrates the potential of the PCA method for dimension reduction. A manifold described by only two principal components is able to predict the CO2 to CO conversion at varying ionization degrees very accurately.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000356816200008 Publication Date 2015-01-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 11 Open Access  
  Notes Approved Most recent IF: 3.302; 2015 IF: 3.591  
  Call Number c:irua:123534 Serial 704  
Permanent link to this record
 

 
Author Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A. pdf  doi
openurl 
  Title The effect of F2 attachment by low-energy electrons on the electron behaviour in an Ar/CF4 inductively coupled plasma Type A1 Journal article
  Year 2012 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 21 Issue 2 Pages 025008-025008,13  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electron behaviour in an Ar/CF4 inductively coupled plasma is investigated by a Langmuir probe and a hybrid model. The simulated and measured results include electron density, temperature and electron energy distribution function for different values of Ar/CF4 ratio, coil power and gas pressure. The hybrid plasma equipment model simulations show qualitative agreement with experiment. The effect of F2 electron attachment on the electron behaviour is explored by comparing two sets of data based on different F atom boundary conditions. It is demonstrated that electron attachment at F2 molecules is responsible for the depletion of low-energy electrons, causing a density decrease as well as a temperature increase when CF4 is added to an Ar plasma.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000302779400022 Publication Date 2012-03-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 23 Open Access  
  Notes Approved Most recent IF: 3.302; 2012 IF: 2.515  
  Call Number UA @ lucian @ c:irua:96549 Serial 841  
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Author Liu, Y.-X.; Zhang, Q.-Z.; Liu, L.; Song, Y.-H.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Electron bounce resonance heating in dual-frequency capacitively coupled oxygen discharges Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 2 Pages 025012-11  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The electron bounce resonance heating (BRH) in dual-frequency capacitively coupled plasmas operated in oxygen is studied by different experimental methods and a particle-in-cell/Monte Carlo collision (PIC/MCC) simulation, and compared with the electropositive argon discharge. In comparison with argon, the experimental results show that in an oxygen discharge the resonance peaks in positive-ion density and light intensity tend to occur at larger electrode gaps. Moreover, at electrode gaps L > 2.5 cm, the positive-ion (and electron) density and the light emission drop monotonically in the oxygen discharge upon increasing L, whereas they rise (after an initial drop) in the argon case. At resonance gap the electronegativity reaches its maximum due to the BRH. All these experimental observations are explained by PIC/MCC simulations, which show that in the oxygen discharge the bulk electric field becomes quite strong and is out of phase with the sheath field. Therefore, it retards the resonance electrons when traversing the bulk, resulting in a suppressed BRH. Both experiment and simulation results show that this effect becomes more pronounced at lower high-frequency power, when the discharge mode changes from electropositive to electronegative. In a pure oxygen discharge, the BRH is suppressed with increasing pressure and almost diminishes at 12 Pa. Finally, the driving frequency significantly affects the BRH, because it determines the phase relation between bulk electric field and sheath electric field.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000317275400014 Publication Date 2013-03-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 20 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:106534 Serial 911  
Permanent link to this record
 

 
Author Yan, M.; Bogaerts, A.; Goedheer, W.J.; Gijbels, R. doi  openurl
  Title Electron energy distribution function in capacitively coupled RF discharges: differences between electropositive Ar and electronegative SiH4 discharges Type A1 Journal article
  Year 2000 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 9 Issue Pages 583-591  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000165341000015 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 21 Open Access  
  Notes Approved Most recent IF: 3.302; 2000 IF: 1.963  
  Call Number UA @ lucian @ c:irua:34071 Serial 929  
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Author Van Laer, K.; Tinck, S.; Samara, V.; de Marneffe, J.F.; Bogaerts, A. pdf  doi
openurl 
  Title Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma : modeling and experimental investigation Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 2 Pages 025011-25019  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper, we investigate the etch process of so-called low-k organic material by means of a N2/H2 capacitively coupled plasma, as applied in the micro-electronics industry for the manufacturing of computer chips. In recent years, such an organic material has emerged as a possible alternative for replacing bulk SiO2 as a dielectric material in the back-end-of-line, because of the smaller parasitic capacity between adjacent conducting lines, and thus a faster propagation of the electrical signals throughout the chip. Numerical simulations with a hybrid plasma model, using an extensive plasma and surface chemistry set, as well as experiments are performed, focusing on the plasma properties as well as the actual etching process, to obtain a better insight into the underlying mechanisms. Furthermore, the effects of gas pressure, applied power and gas composition are investigated to try to optimize the etch process. In general, the plasma density reaches a maximum near the wafer edge due to the so-called 'edge effect'. As a result, the etch rate is not uniform but will also reach its maximum near the wafer edge. The pressure seems not to have a big effect. A higher power increases the etch rate, but the uniformity becomes (slightly) worse. The gas mixing ratio has no significant effect on the etch process, except when a pure H2 or N2 plasma is used, illustrating the synergistic effects of a N2/H2 plasma. In fact, our calculations reveal that the N2/H2 plasma entails an ion-enhanced etch process. The simulation results are in reasonable agreement with the experimental values. The microscopic etch profile shows the desired anisotropic shape under all conditions under study.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000317275400013 Publication Date 2013-03-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:106654 Serial 1084  
Permanent link to this record
 

 
Author Kozák, T.; Bogaerts, A. pdf  url
doi  openurl
  Title Evaluation of the energy efficiency of CO2 conversion in microwave discharges using a reaction kinetics model Type A1 Journal article
  Year 2015 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 24 Issue 24 Pages 015024  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We use a zero-dimensional reaction kinetics model to simulate CO2 conversion in microwave discharges where the excitation of the vibrational levels plays a significant role in the dissociation kinetics. The model includes a description of the CO2 vibrational kinetics, taking into account state-specific VT and VV relaxation reactions and the effect of vibrational excitation on other chemical reactions. The model is used to simulate a general tubular microwave reactor, where a stream of CO2 flows through a plasma column generated by microwave radiation. We study the effects of the internal plasma parameters, namely the reduced electric field, electron density and the total specific energy input, on the CO2 conversion and its energy efficiency. We report the highest energy efficiency (up to 30%) for a specific energy input in the range 0.41.0 eV/molecule and a reduced electric field in the range 50100 Td and for high values of the electron density (an ionization degree greater than 10−5). The energy efficiency is mainly limited by the VT relaxation which contributes dominantly to the vibrational energy losses and also contributes significantly to the heating of the reacting gas. The model analysis provides useful insight into the potential and limitations of CO2 conversion in microwave discharges.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000348298200025 Publication Date 2014-12-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 100 Open Access  
  Notes Approved Most recent IF: 3.302; 2015 IF: 3.591  
  Call Number c:irua:122243 Serial 1087  
Permanent link to this record
 

 
Author Zhao, S.-X.; Gao, F.; Wang, Y.-N.; Bogaerts, A. pdf  doi
openurl 
  Title Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF4 plasma Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 1 Pages 015017-15018  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, a hybrid model is used to investigate the effect of different gas ratios on the Si etching and polymer film deposition characteristics in an Ar/CF4 inductively coupled plasma. The influence of the surface processes on the bulk plasma properties is studied, and also the spatial characteristics of important gas phase and etched species. The densities of F and CF2 decrease when the surface module is included in the simulations, due to the species consumption caused by etching and polymer deposition. The influence of the surface processes on the bulk plasma depends on the Ar/CF4 gas ratio. The deposited polymer becomes thicker at high CF4 content because of more abundant CFx radicals. As a result of the competition between the polymer thickness and the F flux, the etch rate first increases and then decreases upon increasing the CF4 content. The electron properties, more specifically the electron density profile, affect the Si etch characteristics substantially by determining the radical density and flux profiles. In fact, the radial profile of the etch rate is more uniform at low CF4 content since the electron density has a smooth distribution. At high CF4 content, the etch rate is less uniform with a minimum halfway along the wafer radius, because the electron density distribution is more localized. Therefore, our calculations predict that it is better to work at relatively high Ar/CF4 gas ratios, in order to obtain high etch rate and good profile uniformity for etch applications. This, in fact, corresponds to the typical experimental etch conditions in Ar/CF4 gas mixtures as found in the literature, where Ar is typically present at a much higher concentration than CF4.  
  Address  
  Corporate Author Thesis  
  Publisher (up) Institute of Physics Place of Publication Bristol Editor  
  Language Wos 000314966300022 Publication Date 2012-12-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 11 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:102583 Serial 1320  
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