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Quantum mechanical solver for confined heterostructure tunnel field-effect transistors”. Verreck D, Van de Put M, Sorée B, Verhulst AS, Magnus W, Vandenberghe WG, Collaert N, Thean A, Groeseneken G, Journal of applied physics 115, 053706 (2014). http://doi.org/10.1063/1.4864128
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Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 96, 2305 (2004). http://doi.org/10.1063/1.1767619
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Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Journal of applied physics 93, 1230 (2003). http://doi.org/10.1063/1.1533108
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Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Magnus W, Schoenmaker W, Sorée B, Solid state communications 147, 31 (2008). http://doi.org/10.1016/j.ssc.2008.04.025
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Quasiparticle energies and uniaxial pressure effects on the properties of SnO2”. Saniz R, Dixit H, Lamoen D, Partoens B, Applied physics letters 97, 261901 (2010). http://doi.org/10.1063/1.3532109
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Radial fluctuations induced stabilization of the ordered state in two-dimensional classical clusters”. Schweigert IV, Schweigert VA, Peeters FM, Physical review letters 84, 4381 (2000). http://doi.org/10.1103/PhysRevLett.84.4381
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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates”. Delabie A, Sioncke S, Rip J, Van Elshocht S, Pourtois G, Mueller M, Beckhoff B, Pierloot K, Journal of vacuum science and technology: A: vacuum surfaces and films 30, 01a127 (2012). http://doi.org/10.1116/1.3664090
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Real-space calculation of the conductivity tensor for disordered topological matter”. Garcia JH, Covaci L, Rappoport TG, Physical review letters 114, 116602 (2015). http://doi.org/10.1103/PhysRevLett.114.116602
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Realization of artificial ice systems for magnetic vortices in a superconducting MoGe thin film with patterned nanostructures”. Latimer ML, Berdiyorov GR, Xiao ZL, Peeters FM, Kwok WK, Physical review letters 111, 067001 (2013). http://doi.org/10.1103/PhysRevLett.111.067001
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Realization of free-standing silicene using bilayer graphene”. Neek-Amal M, Sadeghi A, Berdiyorov GR, Peeters FM, Applied physics letters 103, 261904 (2013). http://doi.org/10.1063/1.4852636
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Reconstruction of the La0.9Sr0.1MnO3-SrTiO3 interface by quantitative high-resolution electron microscopy”. Geuens P, Lebedev OI, Van Tendeloo G, Solid state communications 116, 643 (2000). http://doi.org/10.1016/S0038-1098(00)00411-7
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Rectification by an imprinted phase in a Josephson junction”. Berdiyorov GR, Milošević, MV, Covaci L, Peeters FM, Physical review letters 107, 177008 (2011). http://doi.org/10.1103/PhysRevLett.107.177008
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Reducing the formation of FIB-induced FCC layers on Cu-Zn-Al austenite”. Zelaya E, Schryvers D, Microscopy research and technique 74, 84 (2011). http://doi.org/10.1002/jemt.20877
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Relaxation phenomena at the metal-to-insulator transition in La0.8Sr0.2MnO3 single crystals”. Dominiczak M, Ruyter A, Limelette P, Monot-Laffez I, Giovannelli F, Rossell MD, Van Tendeloo G, Solid state communications 148, 340 (2008). http://doi.org/10.1016/j.ssc.2008.08.029
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Reply to Rinn and Maass”. Schweigert IV, Schweigert VA, Peeters FM, Physical review letters 86, 4712 (2001). http://doi.org/10.1103/PhysRevLett.86.4712
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Resistance maps for a submicron Hall electrosensor in the diffusive regime”. Papp G, Peeters FM, Journal of applied physics 101, 113717 (2007). http://doi.org/10.1063/1.2745345
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Resistance maps from local probing of a ballistic mesoscopic Hall bar”. Papp G, Peeters FM, Journal of applied physics 101, 063715 (2007). http://doi.org/10.1063/1.2713365
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Resistive switching at manganite/manganite interfaces”. Kalkert C, Krisponeit J-O, Esseling M, Lebedev OI, Moshnyaga V, Damaschke B, Van Tendeloo G, Samwer K, Applied physics letters 99, 132512 (2011). http://doi.org/10.1063/1.3643425
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Resistivity scaling and electron relaxation times in metallic nanowires”. Moors K, Sorée B, Tokei Z, Magnus W, Journal of applied physics 116, 063714 (2014). http://doi.org/10.1063/1.4892984
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Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures”. Wang YJ, Nickel HA, McCombe BD, Peeters FM, Shi JM, Hai GQ, Wu XG, Eustis TJ, Schaff W, Physical review letters 79, 3226 (1997)
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Response function of a Hall magnetosensor in the diffusive regime”. Cornelissens YG, Peeters FM, Journal of applied physics 92, 2006 (2002). http://doi.org/10.1063/1.1487909
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Reversible Li-intercalation through oxygen reactivity in Li-rich Li-Fe-Te oxide materials”. McCalla E, Prakash AS, Berg E, Saubanere M, Abakumov AM, Foix D, Klobes B, Sougrati MT, Rousse G, Lepoivre F, Mariyappan S, Doublet ML, Gonbeau D, Novak P, Van Tendeloo G, Hermann RP, Tarascon JM;, Journal of the electrochemical society 162, A1341 (2015). http://doi.org/10.1149/2.0991507jes
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Revisiting the interplay between ablation, collisional, and radiative processes during ns-laser ablation”. Autrique D, Gornushkin I, Alexiades V, Chen Z, Bogaerts A, Rethfeld B, Applied physics letters 103, 174102 (2013). http://doi.org/10.1063/1.4826505
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The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M, Germain M, Applied physics letters 87, 061905 (2005). http://doi.org/10.1063/1.2008361
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The role of fast argon ions and atoms in the ionization of argon in a direct current glow discharge: a mathematical simulation”. Bogaerts A, Gijbels R, Journal of applied physics 78, 6427 (1995). http://doi.org/10.1063/1.360526
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The role of mass removal mechanisms in the onset of ns-laser induced plasma formation”. Autrique D, Clair G, L'Hermite D, Alexiades V, Bogaerts A, Rethfeld B, Journal of applied physics 114, 023301 (2013). http://doi.org/10.1063/1.4812577
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The role of phase compatibility in martensite”. Salman OU, Finel A, Delville R, Schryvers D, Journal of applied physics T2 –, 22nd International Symposium on Integrated Functionalities (ISIF), JUN 13-16, 2010, San Juan, PR 111, 103517 (2012). http://doi.org/10.1063/1.4712629
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Role of sputtered Cu atoms and ions in a direct current glow discharge: combined fluid and Monte Carlo model”. Bogaerts A, Gijbels R, Journal of applied physics 79, 1279 (1996). http://doi.org/10.1063/1.361023
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Role of Ar2+ and Ar+2 ions in a direct current argon glow discharge: a numerical description”. Bogaerts A, Gijbels R, Journal of applied physics 86, 4124 (1999). http://doi.org/10.1063/1.371337
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Role of the fast Ar atoms, Ar+ ions and metastable Ar atoms in a hollow cathode glow discharge: study by a hybrid model”. Baguer N, Bogaerts A, Gijbels R, Journal of applied physics 94, 2212 (2003). http://doi.org/10.1063/1.1594276
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