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	Author	Sieger, M.; Pahlke, P.; Lao, M.; Eisterer, M.; Meledin, A.; Van Tendeloo, G.; Ottolinger, R.; Haenisch, J.; Holzapfel, B.; Usoskin, A.; Kursumovic, A.; MacManus-Driscoll, J.L.; Stafford, B.H.; Bauer, M.; Nielsch, K.; Schultz, L.; Huehne, R.
	Title	Tailoring microstructure and superconducting properties in thick BaHfO₃ and Ba₂YNb/Ta)O-6 doped YBCO films on technical templates			Type	A1 Journal article
	Year	2017	Publication	IEEE transactions on applied superconductivity	Abbreviated Journal
	Volume	27	Issue	4	Pages	6601407
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The current transport capability of YBa2Cu3O7-x(YBCO) based coated conductors (CCs) is mainly limited by two features: the grain boundaries of the used textured template, which are transferred into the superconducting film through the buffer layers, and the ability to pin magnetic flux lines by incorporation of defined defects in the crystal lattice. By adjusting the deposition conditions, it is possible to tailor the pinning landscape in doped YBCO in order to meet specific working conditions (T, B) for CC applications. To study these effects, we deposited YBCO layers with a thickness of about 1-2 mu m using pulsed laser deposition on buffered rolling-assisted biaxially textured Ni-W substrates as well as on metal tapes having either an ion-beam-texturedYSZbuffer or an MgO layer textured by inclined substrate deposition. BaHfO3 and the mixed double-perovskite Ba2Y(Nb/Ta)O-6 were incorporated as artificial pinning centers in these YBCO layers. X-ray diffraction confirmed the epitaxial growth of the superconductor on these templates as well as the biaxially oriented incorporation of the secondary phase additions in the YBCO matrix. A critical current density J(c) of more than 2 MA/cm(2) was achieved at 77 K in self-field for 1-2 mu m thick films. Detailed TEM (transmission electron microscopy) studies revealed that the structure of the secondary phase can be tuned, forming c-axis aligned nanocolumns, ab-oriented platelets, or a combination of both. Transport measurements show that the J(c) anisotropy in magnetic fields is reduced by doping and the peak in the J(c) (theta) curves can be correlated to the microstructural features.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000394588100001	Publication Date	2016-12-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	12	Open Access	OpenAccess
	Notes	; This work was supported by EUROTAPES, a collaborative project funded by the European Commission's Seventh Framework Program (FP7/2007-2013) under Grant Agreement no. 280432. ;			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:141961			Serial	4693
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	Author	Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S.
	Title	Towards rapid nanoscale measurement of strain in III-nitride heterostructures			Type	A1 Journal article
	Year	2013	Publication	Applied Physics Letters	Abbreviated Journal	Appl Phys Lett
	Volume	103	Issue		Pages	231904
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000328634900025	Publication Date	2013-12-03
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	6	Open Access
	Notes				Approved	Most recent IF: 3.411; 2013 IF: 3.515
	Call Number	UA @ lucian @ c:irua:136443			Serial	4513
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	Author	Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R.
	Title	Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography			Type	A1 Journal article
	Year	2011	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	99	Issue		Pages	261911-261913
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000298638500027	Publication Date	2012-01-03
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	26	Open Access
	Notes				Approved	Most recent IF: 3.411; 2011 IF: 3.844
	Call Number	UA @ lucian @ c:irua:136428			Serial	4507
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	Author	Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L.
	Title	Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy			Type	A1 Journal article
	Year	2012	Publication	Applied Physics Letters	Abbreviated Journal	Appl Phys Lett
	Volume	100	Issue		Pages	233121
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos		Publication Date	2012-06-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited		Open Access
	Notes				Approved	Most recent IF: 3.411; 2012 IF: 3.794
	Call Number	UA @ lucian @ c:irua:136432			Serial	4509
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	Author	Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L.
	Title	Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy			Type	A1 Journal article
	Year	2012	Publication	Applied Physics Letters	Abbreviated Journal	Appl Phys Lett
	Volume	112	Issue		Pages	124505
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000312829400128	Publication Date	2012-12-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	14	Open Access
	Notes				Approved	Most recent IF: 3.411; 2012 IF: 3.794
	Call Number	UA @ lucian @ c:irua:136433			Serial	4510
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	Author	Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D.
	Title	Improved strain precision with high spatial resolution using nanobeam precession electron diffraction			Type	A1 Journal article
	Year	2013	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	103	Issue		Pages	241913
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	NanoBeam Electron Diffraction is a simple and efficient technique to measure strain in nanostructures. Here, we show that improved results can be obtained by precessing the electron beam while maintaining a few nanometer probe size, i.e., by doing Nanobeam Precession Electron Diffraction (N-PED). The precession of the beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise. In N-PED, smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots. Precision in the strain measurement better than 2 × 10−4 is obtained with a probe size approaching 1 nm in diameter.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000328706500031	Publication Date	2013-12-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	53	Open Access
	Notes				Approved	Most recent IF: 3.411; 2013 IF: 3.515
	Call Number	UA @ lucian @ c:irua:136442			Serial	4502
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	Author	Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M.
	Title	Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs			Type	A1 Journal article
	Year	2017	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	111	Issue	4	Pages	041901
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000406779700008	Publication Date	2017-07-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951; 1077-3118	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	78	Open Access	Not_Open_Access
	Notes	; The authors are grateful to Professor Michael Uren and Dr. Roland B. Simon (University of Bristol) for helpful discussions and to Dr. Sien Drijkoningen (Hasselt University) for taking the SEM micrographs. This work was in part supported by DARPA under Contract No. FA8650-15-C-7517, monitored by Dr. Avram Bar Cohen and Dr. John Blevins, and supported by Dr. Joseph Maurer and Dr. Abirami Sivananthan. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of DARPA. Y.Z. acknowledges China Scholarship Council for the financial support. S.K. and J.V. acknowledge the FWO-Vlaanderen for financial support under contract G.0044.13N “Charge ordering.” ;			Approved	Most recent IF: 3.411
	Call Number	UA @ lucian @ c:irua:145203			Serial	4728
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	Author	Groenendijk, D.J.; Autieri, C.; Girovsky, J.; Martinez-Velarte, M.C.; Manca, N.; Mattoni, G.; Monteiro, A.M.R.V.L.; Gauquelin, N.; Verbeeck, J.; Otte, A.F.; Gabay, M.; Picozzi, S.; Caviglia, A.D.
	Title	Spin-orbit semimetal SrIrO₃ in the two-dimensional limit			Type	A1 Journal article
	Year	2017	Publication	Physical review letters	Abbreviated Journal	Phys Rev Lett
	Volume	119	Issue	25	Pages	256403
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	<script type='text/javascript'>document.write(unpmarked('We investigate the thickness-dependent electronic properties of ultrathin SrIrO3 and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO(3)d is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO3 requires antiferromagnetic order.'));
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000418619100014	Publication Date	2017-12-22
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-9007	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	8.462	Times cited	79	Open Access	OpenAccess
	Notes	; This work was supported by The Netherlands Organisation for Scientific Research (NWO/OCW) as part of the Frontiers of Nanoscience program (NanoFront), by the Dutch Foundation for Fundamental Research on Matter (FOM), and by the European Research Council under the European Union's H2020 programme/ERC Grant Agreement No. [677458]. The authors thank R. Claessen, P. Schutz, D. Di Sante, G. Sangiovanni, and A. Santander Syro for useful discussions. M. G. gratefully acknowledges support from the French National Research Agency (ANR) (Project LACUNES No. ANR-13-BS04-0006-01). C. A. and S. P. acknowledge financial support from Fondazione Cariplo via the project Magister (Project No. 2013-0726) and from CNR-SPIN via the Seed Project “CAMEO”. N. G. and J. V. acknowledge support from the GOA project “Solarpaint” of the University of Antwerp. The Qu-AntEM microscope was partly funded by the Hercules fund from the Flemish Government. ;			Approved	Most recent IF: 8.462
	Call Number	UA @ lucian @ c:irua:148510			Serial	4897
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	Author	Geenen, F.A.; van Stiphout, K.; Nanakoudis, A.; Bals, S.; Vantomme, A.; Jordan-Sweet, J.; Lavoie, C.; Detavernier, C.
	Title	Controlling the formation and stability of ultra-thin nickel silicides : an alloying strategy for preventing agglomeration			Type	A1 Journal article
	Year	2018	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
	Volume	123	Issue	123	Pages	075303
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t(c) = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 degrees C, thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of “thickness gradients,” which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness t(c). The results are discussed in the framework of classical nucleation theory. Published by AIP Publishing.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000425807400018	Publication Date	2018-02-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979; 1089-7550	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.068	Times cited	23	Open Access	OpenAccess
	Notes	; The authors acknowledge the FWO Vlaanderen, the Hercules Foundation, and BOF-UGent (GOA 01G01513) for providing financial support for this work. This research used resources of the National Synchrotron Light Source, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-AC02-98CH10886. ;			Approved	Most recent IF: 2.068
	Call Number	UA @ lucian @ c:irua:149912UA @ admin @ c:irua:149912			Serial	4929
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	Author	Roxana Vlad, V.; Bartolome, E.; Vilardell, M.; Calleja, A.; Meledin, A.; Obradors, X.; Puig, T.; Ricart, S.; Van Tendeloo, G.; Usoskin, A.; Lee, S.; Petrykin, V.; Molodyk, A.
	Title	Inkjet printing multideposited YBCO on CGO/LMO/MgO/Y₂O₃/Al₂O₃/Hastelloy tape for 2G-coated conductors			Type	A1 Journal article
	Year	2018	Publication	IEEE transactions on applied superconductivity	Abbreviated Journal
	Volume	28	Issue	4	Pages	6601805
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We present the preparation of a new architecture of coated conductor by Inkjet printing of low fluorine YBa2Cu3O7-x (YBCO) on top of SuperOx tape: CGO/LMO/IBAD-MgO/Y2O3/Al-2 O-3/Hastelloy. A five-layered multideposited, 475-nm-thick YBCO film was structurally and magnetically characterized. A good texture was achieved using this combination of buffer layers, requiring only a 30-nm-thin ion-beam-assisted deposition (IBAD)-MgO layer. The LF-YBCO CC reaches self-field critical current density values of J(c)(GB) similar to NJ 15.9 MA/cm(2) (5 K), similar to 1.23 MA/cm(2) (77 K) corresponding to an I-c (77 K) = 58.4 A/cm-width. Inkjet printing offers a flexible and cost effective method for YBCO deposition, allowing patterning of structures.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000429010900001	Publication Date	2018-02-22
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.288	Times cited	2	Open Access	Not_Open_Access
	Notes	; This work was performed within the framework of the EUROTAPES Project FP7-NMP.2011.2.2-1 under Grant280432, funded by the EU. ICMAB research was financed by the Ministry of Economy and Competitiveness, and FEDER funds under Projects MAT2011-28874-C02-01, MAT2014-51778-C2-1-R, ENE2014-56109-C3-3-R, and Consolider Nanoselect CSD2007-00041, and by Generalitat de Catalunya (2009 SGR 770, 2015 SGR 753, and Xarmae). ICMAB acknowledges support from Severo Ochoa Program (MINECO) under Grant SEV-2015-0496. ;			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:150711			Serial	4971
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	Author	Sieger, M.; Pahlke, P.; Lao, M.; Meledin, A.; Eisterer, M.; Van Tendeloo, G.; Schultz, L.; Nielsch, K.; Huehne, R.
	Title	Thick secondary phase pinning-enhanced YBCO films on technical templates			Type	A1 Journal article
	Year	2018	Publication	IEEE transactions on applied superconductivity	Abbreviated Journal
	Volume	28	Issue	4	Pages	8000505
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The critical current I-c(B) of YBa2Cu3O7-delta (YBCO) coated conductors can be increased by growing thicker superconductor layers as well as improving the critical current density J(c)(B) by the incorporation of artificial pinning centers. We studied the properties of pulsed laser deposited BaHfO3 (BHO)-doped YBCO films with thicknesses of up to 5 mu m on buffered rolling-assisted biaxially textured Ni-5 at % W tape and alternating beam assisted deposition textured Yttrium-stabilized ZrO2 layers on stainless steel. X-Ray diffraction confirms the epitaxial growth of the superconductor on the buffered metallic template. BHO additions reduce the film porosity and lower the probability to grow misoriented grains, hence preventing the J(c) decrease observed in undoped YBCO films with thicknesses > 2 mu m. Thereby, a continuous increase in I-c at 77 K is achieved. A mixed structure of secondary phase nanorods and platelets with different orientations increases J(c)(B) in the full angular range and simultaneously lowers the J(c) anisotropy compared to pristine YBCO.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000427623700001	Publication Date	2018-01-30
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.288	Times cited	1	Open Access	Not_Open_Access
	Notes	; This work was supported by EUROTAPES, a collaborative project funded by the European Commission's Seventh Framework Program (FP7 / 2007 – 2013) under Grant Agreement no. 280432. Max Sieger acknowledges funding by the Graduate Academy of the Technical University Dresden, funded by means of the Excellence Initiative by the German Federal and State Governments. ;			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:150712			Serial	4986
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	Author	Lubk, A.; Clark, L.; Guzzinati, G.; Verbeeck, J.
	Title	Topological analysis of paraxially scattered electron vortex beams			Type	A1 Journal article
	Year	2013	Publication	Physical review : A : atomic, molecular and optical physics	Abbreviated Journal	Phys Rev A
	Volume	87	Issue	3	Pages	033834-33838
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	We investigate topological aspects of subnanometer electron vortex beams upon elastic propagation through atomic scattering potentials. Two main aspects can be distinguished: (i) significantly reduced delocalization compared to a similar nonvortex beam if the beam centers on an atomic column and (ii) site symmetry dependent splitting of higher-order vortex beams. Furthermore, the results provide insight into the complex vortex line fabric within the elastically scattered wave containing characteristic vortex loops predominantly attached to atomic columns and characteristic twists of vortex lines around atomic columns. DOI: 10.1103/PhysRevA.87.033834
	Address
	Corporate Author				Thesis
	Publisher	American Physical Society	Place of Publication	New York, N.Y	Editor
	Language		Wos	000316790600011	Publication Date	2013-03-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1050-2947;1094-1622;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.925	Times cited	26	Open Access
	Notes	Countatoms; Vortex; Esteem2; esteem2jra3 ECASJO;			Approved	Most recent IF: 2.925; 2013 IF: 2.991
	Call Number	UA @ lucian @ c:irua:108496			Serial	3673
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	Author	Augustyns, V.; van Stiphout, K.; Joly, V.; Lima, T.A.L.; Lippertz, G.; Trekels, M.; Menendez, E.; Kremer, F.; Wahl, U.; Costa, A.R.G.; Correia, J.G.; Banerjee, D.; Gunnlaugsson, H.P.; von Bardeleben, J.; Vickridge, I.; Van Bael, M.J.; Hadermann, J.; Araujo, J.P.; Temst, K.; Vantomme, A.; Pereira, L.M.C.
	Title	Evidence of tetragonal distortion as the origin of the ferromagnetic ground state in gamma-Fe nanoparticles			Type	A1 Journal article
	Year	2017	Publication	Physical review B	Abbreviated Journal	Phys Rev B
	Volume	96	Issue	17	Pages	174410
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	<script type='text/javascript'>document.write(unpmarked('gamma-Fe and related alloys are model systems of the coupling between structure and magnetism in solids. Since different electronic states (with different volumes and magnetic ordering states) are closely spaced in energy, small perturbations can alter which one is the actual ground state. Here, we demonstrate that the ferromagnetic state of gamma-Fe nanoparticles is associated with a tetragonal distortion of the fcc structure. Combining a wide range of complementary experimental techniques, including low-temperature Mossbauer spectroscopy, advanced transmission electron microscopy, and synchrotron radiation techniques, we unambiguously identify the tetragonally distorted ferromagnetic ground state, with lattice parameters a = 3.76(2) angstrom and c = 3.50(2) angstrom, and a magnetic moment of 2.45(5) mu(B) per Fe atom. Our findings indicate that the ferromagnetic order in nanostructured gamma-Fe is generally associated with a tetragonal distortion. This observation motivates a theoretical reassessment of the electronic structure of gamma-Fe taking tetragonal distortion into account.'));
	Address
	Corporate Author				Thesis
	Publisher	American Physical Society	Place of Publication	New York, N.Y	Editor
	Language		Wos	000414525200005	Publication Date	2017-11-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9969; 2469-9950	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	1	Open Access	OpenAccess
	Notes	; The authors thank the Fund for Scientific Research-Flanders, the Concerted Research Action of the KU Leuven (GOA/14/007), the KU Leuven BOF (STRT/14/002), the Hercules Foundation, the Portuguese Foundation for Science and Technology (CERN/FIS-NUC/0004/2015), and the European Union Seventh Framework through ENSAR2 (European Nuclear Science and Applications Research, Project No. 654002), and SPIRIT (Support of Public and Industrial Research Using Ion Beam Technology, Contract No. 227012). We acknowledge the European Synchrotron Radiation Facility (ESRF) for providing beam time (experiments 26-01-1018, 26-01-1057, 20-02-728, HC-1850, HC-2208), as well as C. Baehtz, N. Boudet, and N. Blancand for support during the experiments. We acknowledge the ISOLDE-CERN facility for providing beam time (experiment IS580) and technical assistance. The authors (L.M.C.P., F.K.) acknowledge the facilities and the scientific and technical assistance of the Australian Microscopy & Microanalysis Research Facility at the Centre for Advanced Microscopy, Australian National University. We also acknowledge the contribution of Prof. Mark Ridgway (Australian National University), who passed away before the work was completed. ;			Approved	Most recent IF: 3.836
	Call Number	UA @ lucian @ c:irua:147387			Serial	4873
Permanent link to this record



	Author	Carmesin, C.; Schowalter, M.; Lorke, M.; Mourad, D.; Grieb, T.; Müller-Caspary, K.; Yacob, M.; Reithmaier, J.P.; Benyoucef, M.; Rosenauer, A.; Jahnke, F.
	Title	Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 \mum telecom wavelength			Type	A1 Journal article
	Year	2017	Publication	Physical review B	Abbreviated Journal	Phys Rev B
	Volume	96	Issue	23	Pages	235309
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	<script type='text/javascript'>document.write(unpmarked('Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP quantum dots suitable for single-photon emission at the 1.55 mu m telecom wavelength are reported. The structural and compositional properties of the system are obtained from high-resolution scanning transmission electron microscopy of individual quantum dots. The system is composed of almost pure InAs quantum dots embedded in quaternary InAlGaAs barrier material, which is lattice matched to the InP substrate. When using the measured results for a representative quantum-dot geometry as well as experimentally reconstructed alloy concentrations, a combination of strain-field and electronic-state calculations is able to reproduce the quantum-dot emission wavelength in agreement with the experimentally determined photoluminescence spectrum. The inhomogeneous broadening of the latter can be related to calculated variations of the emission wavelength for the experimentally deduced In-concentration fluctuations and size variations.'));
	Address
	Corporate Author				Thesis
	Publisher	American Physical Society	Place of Publication	New York, N.Y	Editor
	Language		Wos	000418654200009	Publication Date	2017-12-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9969; 2469-9950	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	3	Open Access	OpenAccess
	Notes	; The authors gratefully acknowledge financial support from the Deutsche Forschungsgemeinschaft Project No. JA 14-1, the BMBF Projects Q.com-H No. 16KIS0111 and No. 16KIS0112, as well as computational resources from HLRN (Hannover, Berlin). ;			Approved	Most recent IF: 3.836
	Call Number	UA @ lucian @ c:irua:148505			Serial	4882
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	Author	Müller-Caspary, K.; Duchamp, M.; Roesner, M.; Migunov, V.; Winkler, F.; Yang, H.; Huth, M.; Ritz, R.; Simson, M.; Ihle, S.; Soltau, H.; Wehling, T.; Dunin-Borkowski, R.E.; Van Aert, S.; Rosenauer, A.
	Title	Atomic-scale quantification of charge densities in two-dimensional materials			Type	A1 Journal article
	Year	2018	Publication	Physical review B	Abbreviated Journal	Phys Rev B
	Volume	98	Issue	12	Pages	121408
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The charge density is among the most fundamental solid state properties determining bonding, electrical characteristics, and adsorption or catalysis at surfaces. While atomic-scale charge densities have as yet been retrieved by solid state theory, we demonstrate both charge density and electric field mapping across a mono-/bilayer boundary in 2D MoS2 by momentum-resolved scanning transmission electron microscopy. Based on consistency of the four-dimensional experimental data, statistical parameter estimation and dynamical electron scattering simulations using strain-relaxed supercells, we are able to identify an AA-type bilayer stacking and charge depletion at the Mo-terminated layer edge.
	Address
	Corporate Author				Thesis
	Publisher	American Physical Society	Place of Publication	New York, N.Y	Editor
	Language		Wos	000445508200004	Publication Date	2018-09-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2469-9969; 2469-9950	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.836	Times cited	10	Open Access	OpenAccess
	Notes	; K.M.-C. acknowledges funding from the Initiative and Network Fund of the Helmholtz Association (VH-NG-1317) within the framework of the Helmholtz Young Investigator Group moreSTEM at Forschungszentrum Julich, Germany. ;			Approved	Most recent IF: 3.836
	Call Number	UA @ lucian @ c:irua:153621			Serial	5078
Permanent link to this record



	Author	Schryvers, D.; Van Aert, S.; Delville, R.; Idrissi, H.; Turner, S.; Salje, E.K.H.
	Title	Dedicated TEM on domain boundaries from phase transformations and crystal growth			Type	A1 Journal article
	Year	2013	Publication	Phase transitions	Abbreviated Journal	Phase Transit
	Volume	86	Issue	1	Pages	15-22
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Investigating domain boundaries and their effects on the behaviour of materials automatically implies the need for detailed knowledge on the structural aspects of the atomic configurations at these interfaces. Not only in view of nearest neighbour interactions but also at a larger scale, often surpassing the unit cell, the boundaries can contain structural elements that do not exist in the bulk. In the present contribution, a number of special boundaries resulting from phase transformations or crystal growth and those recently investigated by advanced transmission electron microscopy techniques in different systems will be reviewed. These include macrotwins between microtwinned martensite plates in NiAl, austenite-single variant martensite habit planes in low hysteresis NiTiPd, nanotwins in non-textured nanostructured Pd and ferroelastic domain boundaries in CaTiO3. In all discussed cases these boundaries play an essential role in the properties of the respective materials.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000312586700003	Publication Date	2012-12-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-1594;1029-0338;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.06	Times cited		Open Access
	Notes	Fwo; Iap			Approved	Most recent IF: 1.06; 2013 IF: 1.044
	Call Number	UA @ lucian @ c:irua:101222			Serial	612
Permanent link to this record



	Author	Colomer, J.-F.; Henrard, L.; Lambin, P.; Van Tendeloo, G.
	Title	Electron diffraction of nanotubes bundles : unique helicity and tube-tube atomically coherent packing			Type	P1 Proceeding
	Year	2002	Publication	AIP conference proceedings T2 – 16th International Winterschool on Electronic Properties of Novel, Materials, MAR 02-09, 2002, KIRCHBERG, AUSTRIA	Abbreviated Journal
	Volume		Issue		Pages	314-317
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract	The atomic structure of single-wall carbon nanotube bundles produced by three different techniques has been characterized by electron diffraction and microscopy. Small bundles produced by Catalytical Chemical Vapor Deposition (CCVD) exhibit only one or two tube chiralities within a single bundle while bundles produced by arc-discharge or laser-ablation exhibit more chiralities. A detailed analysis of the central line of diffraction is also presented. The CCVD nanotubes present more intense spots around 1.7 Angstrom(-1) < k < 2Angstrom(-1) (k is the momentum transfer) compared to what is observed for nanotubes produced by other methods. Amongst the possible explanation for such an anomaly, we put forward that in this range of momentum transfer, the relative tube orientations and translations are important for what concerns the interpretation of the diffraction peaks intensities.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000178866600070	Publication Date	2003-02-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume	633	Series Issue		Edition
	ISSN	0-7354-0088-1; 0094-243x	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104172			Serial	921
Permanent link to this record



	Author	Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E.
	Title	Electron microscopy study of the formation of Ni₅Al₃ in a Ni_62.5Al_37.5 B2 alloy: 1: precipitation and growth			Type	A1 Journal article
	Year	1995	Publication	Acta metallurgica et materialia	Abbreviated Journal
	Volume	43	Issue	11	Pages	4045-4056
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	A1995TA33200014	Publication Date	2003-12-05
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0956-7151;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	27	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13164			Serial	973
Permanent link to this record



	Author	Schryvers, D.; Ma, Y.; Toth, L.; Tanner, L.E.
	Title	Electron microscopy study of the formation of Ni₅Al₃ in a Ni_62.5Al_37.5 B2 alloy: 2: plate crystallography			Type	A1 Journal article
	Year	1995	Publication	Acta metallurgica et materialia	Abbreviated Journal
	Volume	43	Issue	11	Pages	4057-4065
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	A1995TA33200015	Publication Date	2003-12-05
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0956-7151;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	11	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13165			Serial	974
Permanent link to this record



	Author	Bismayer, U.; Mathes, D.; Oroyo, M.; Bosbach, D.; Putnis, A.; Van Tendeloo, G.; Güttler, B.
	Title	Ferroelastic domains in lead phosphate-arsenate: an AFM, X-ray diffraction, TEM and raman study			Type	A1 Journal article
	Year	2000	Publication	Phase transitions	Abbreviated Journal	Phase Transit
	Volume	71	Issue		Pages	243-270
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000088137000006	Publication Date	2007-07-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-1594;1029-0338;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.06	Times cited	6	Open Access
	Notes				Approved	Most recent IF: 1.06; 2000 IF: NA
	Call Number	UA @ lucian @ c:irua:54723			Serial	1177
Permanent link to this record



	Author	Abakumov, A.M.; Lebedev, O.I.; Nistor, L.; Van Tendeloo, G.; Amelinckx, S.
	Title	The ferroelectric phase transition in tridymite type BaAl₂O₄ studied by electron microscopy			Type	A1 Journal article
	Year	2000	Publication	Phase transitions	Abbreviated Journal	Phase Transit
	Volume	71	Issue		Pages	143-160
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000088795800005	Publication Date	2007-07-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-1594;1029-0338;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.06	Times cited	21	Open Access
	Notes				Approved	Most recent IF: 1.06; 2000 IF: NA
	Call Number	UA @ lucian @ c:irua:54724			Serial	1181
Permanent link to this record



	Author	Van Aert, S.; Turner, S.; Delville, R.; Schryvers, D.; Van Tendeloo, G.; Ding, X.; Salje, E.K.H.
	Title	Functional twin boundaries			Type	A1 Journal article
	Year	2013	Publication	Phase transitions	Abbreviated Journal	Phase Transit
	Volume	86	Issue	11	Pages	1052-1059
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Functional interfaces are at the core of research in the emerging field of domain boundary engineering where polar, conducting, chiral, and other interfaces and twin boundaries have been discovered. Ferroelectricity was found in twin walls of paraelectric CaTiO3. We show that the effect of functional interfaces can be optimized if the number of twin boundaries is increased in densely twinned materials. Such materials can be produced by shear in the ferroelastic phase rather than by rapid quench from the paraelastic phase.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000327475900002	Publication Date	2013-01-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-1594;1029-0338;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.06	Times cited	5	Open Access
	Notes				Approved	Most recent IF: 1.06; 2013 IF: 1.044
	Call Number	UA @ lucian @ c:irua:107344			Serial	1304
Permanent link to this record



	Author	Van Aert, S.; den Dekker, A.J.; van Dyck, D.; van den Bos, A.
	Title	High-resolution electron microscopy and electron tomography: resolution versus precision			Type	A1 Journal article
	Year	2002	Publication	Journal of structural biology	Abbreviated Journal	J Struct Biol
	Volume	138	Issue		Pages	21-33
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000177978800003	Publication Date	2002-09-17
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1047-8477;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.767	Times cited	33	Open Access
	Notes				Approved	Most recent IF: 2.767; 2002 IF: 4.194
	Call Number	UA @ lucian @ c:irua:47520			Serial	1446
Permanent link to this record



	Author	Yandouzi, M.; Toth, L.; Schryvers, D.
	Title	High resolution transmission electron microscopy study of nanoscale Ni-rich Ni-Al films evaporated onto NaCl and KCl			Type	A1 Journal article
	Year	1998	Publication	Nanostructured materials	Abbreviated Journal	Nanostruct Mater
	Volume	10	Issue		Pages	99-115
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000073840600011	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0965-9773;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	2	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:48370			Serial	1463
Permanent link to this record



	Author	Muto, S.; Schryvers, D.; Merk, N.; Tanner, L.E.
	Title	HREM and ED study of the displacive transformation of the Ni₂Al phase in a Ni₆₅Al₃₅ alloy and associated with the martensitic transformation			Type	A1 Journal article
	Year	1993	Publication	Acta metallurgica et materialia	Abbreviated Journal
	Volume	41	Issue		Pages	2377-2383
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	A1993LN82900011	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0956-7151	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	31	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:6778			Serial	1497
Permanent link to this record



	Author	Schryvers, D.; Lahjouji, D.E.; Slootmaekers, B.; Potapov, P.L.
	Title	HREM investigation of martensite precursor effects and stacking sequences in Ni-Mn-Ti alloys			Type	A1 Journal article
	Year	1996	Publication	Scripta metallurgica et materialia	Abbreviated Journal	Scripta Mater
	Volume	35	Issue		Pages	1235-1241
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	A1996VL92800019	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1359-6462;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.224	Times cited	2	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:15427			Serial	1506
Permanent link to this record



	Author	Peirs, J.; Tirry, W.; Amin-Ahmadi, B.; Coghe, F.; Verleysen, P.; Rabet, L.; Schryvers, D.; Degrieck, J.
	Title	Microstructure of adiabatic shear bands in Ti6Al4V			Type	A1 Journal article
	Year	2013	Publication	Materials characterization	Abbreviated Journal	Mater Charact
	Volume	75	Issue		Pages	79-92
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Microstructural deformation mechanisms in adiabatic shear bands in Ti6Al4V are studied using traditional TEM and selected area diffraction, and more advanced microstructural characterisation techniques such as energy dispersive X-ray spectroscopy, high angle annular dark field STEM and conical dark field TEM. The shear bands under investigation are induced in Ti6Al4V samples by high strain rate compression of cylindrical and hat-shaped specimens in a split Hopkinson pressure bar setup. Samples from experiments interrupted at different levels of deformation are used to study the evolution of the microstructure in and nearby the shear bands. From the early stages of adiabatic shear band formation, TEM revealed strongly elongated equiaxed grains in the shear band. These band-like grains become narrower towards the centre of the band and start to fraction even further along their elongated direction to finally result in a nano-crystalline region in the core. In fully developed shear bands, twins and a needle-like martensite morphology are observed near the shear band.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000314860900011	Publication Date	2012-11-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1044-5803;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.714	Times cited	56	Open Access
	Notes	Iuap; Fwo			Approved	Most recent IF: 2.714; 2013 IF: 1.925
	Call Number	UA @ lucian @ c:irua:105300			Serial	2065
Permanent link to this record



	Author	Meynen, V.; Busuioc, A.M.; Beyers, E.; Cool, P.; Vansant, E.F.; Bilba, N.; Mertens, M.; Lebedev, O.; Van Tendeloo, G.
	Title	Nanodesign of combined micro- and mesoporous materials for specific applications in adsorption and catalysis			Type	H3 Book chapter
	Year	2007	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Nova	Place of Publication	New York	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:63126			Serial	2251
Permanent link to this record



	Author	Meyer, H.W.; Bismayer, U.; Adiwidjaja, G.; Zhang, M.; Nistor, L.; Van Tendeloo, G.
	Title	Natural titanite and malayite: structural investigations and the 500K anomaly			Type	A1 Journal article
	Year	1998	Publication	Phase transitions	Abbreviated Journal	Phase Transit
	Volume	67	Issue		Pages	27-49
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000079806000003	Publication Date	2007-07-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-1594;1029-0338;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.06	Times cited	9	Open Access
	Notes	)			Approved	Most recent IF: 1.06; 1998 IF: 0.551
	Call Number	UA @ lucian @ c:irua:25683			Serial	2287
Permanent link to this record



	Author	Van Tendeloo, G.; Amelinckx, S.
	Title	The origin of diffuse intensity in electron diffraction patterns			Type	A1 Journal article
	Year	1998	Publication	Phase transitions	Abbreviated Journal	Phase Transit
	Volume	67	Issue		Pages	101-135
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York	Editor
	Language		Wos	000079806000006	Publication Date	2007-07-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-1594;1029-0338;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.06	Times cited	17	Open Access
	Notes				Approved	Most recent IF: 1.06; 1998 IF: 0.551
	Call Number	UA @ lucian @ c:irua:25682			Serial	2523
Permanent link to this record

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