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Author Sels, D.; Sorée, B.; Groeseneken, G.
Title 2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors Type A1 Journal article
Year 2010 Publication Abbreviated Journal
Volume Issue Pages 85-88
Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Abstract
Address
Corporate Author Thesis
Publisher Pisa University Press Place of Publication (down) Pisa Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title 14th International Workshop on Computational Electronics
Series Volume Series Issue Edition
ISSN 978-1-4244-9381-4 ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:91699 Serial 6
Permanent link to this record
 
 
Author Maeyens, A.; Tempère, J.
Title How would a superconducting liquid flow in a magnetic field? Type A3 Journal article
Year 2007 Publication Europhysics news Abbreviated Journal
Volume 38 Issue 5 Pages 18
Keywords A3 Journal article; Theory of quantum systems and complex systems; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Petit-Lancy Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0531-7479 ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:66156 Serial 1496
Permanent link to this record
 
 
Author Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M.
Title Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems Type A1 Journal article
Year 2012 Publication ECS solid state letters Abbreviated Journal Ecs Solid State Lett
Volume 1 Issue 4 Pages 63-65
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication (down) Pennington (N.J.) Editor
Language Wos 000318340300005 Publication Date 2012-08-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8742;2162-8750; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.184 Times cited 11 Open Access
Notes Approved Most recent IF: 1.184; 2012 IF: NA
Call Number UA @ lucian @ c:irua:108530 Serial 160
Permanent link to this record
 
 
Author Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.;
Title Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates Type A1 Journal article
Year 2013 Publication ECS solid state letters Abbreviated Journal Ecs Solid State Lett
Volume 2 Issue 11 Pages P104-P106
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication (down) Pennington (N.J.) Editor
Language Wos 000324582600006 Publication Date 2013-09-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8742;2162-8750; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.184 Times cited 12 Open Access
Notes Approved Most recent IF: 1.184; 2013 IF: 0.781
Call Number UA @ lucian @ c:irua:111208 Serial 1070
Permanent link to this record
 
 
Author Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G.
Title Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations Type A1 Journal article
Year 2015 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 4 Issue 4 Pages N3127-N3133
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication (down) Pennington (N.J.) Editor
Language Wos 000349547900018 Publication Date 2014-11-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769;2162-8777; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 19 Open Access
Notes Approved Most recent IF: 1.787; 2015 IF: 1.558
Call Number c:irua:125296 Serial 1150
Permanent link to this record
 
 
Author Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N.
Title Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures Type A1 Journal article
Year 2018 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 7 Issue 2 Pages P66-P72
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. (C) The Author(s) 2018. Published by ECS.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication (down) Pennington (N.J.) Editor
Language Wos 000425215200010 Publication Date 2018-01-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769; 2162-8777 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 5 Open Access OpenAccess
Notes Approved Most recent IF: 1.787
Call Number UA @ lucian @ c:irua:149326 Serial 4933
Permanent link to this record
 
 
Author Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M.
Title Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations Type A1 Journal article
Year 2018 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 7 Issue 6 Pages N73-N80
Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication (down) Pennington (N.J.) Editor
Language Wos 000440836000004 Publication Date 2018-05-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769; 2162-8777 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 2 Open Access Not_Open_Access
Notes ; The authors thank the imec core CMOS program members, the European Commission, its TAKEMI5 ECSEL research project and the local authorities for their support. ; Approved Most recent IF: 1.787
Call Number UA @ lucian @ c:irua:153205UA @ admin @ c:irua:153205 Serial 5130
Permanent link to this record
 
 
Author Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W.
Title On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications Type A1 Journal article
Year 2018 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 7 Issue 5 Pages P228-P237
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (<1%). Literature proposes the formation of local semiconducting Si3P4 complexes to explain the observed behaviors in Si:P [Z. Ye et al., ECS Trans., 50(9) 2013, p. 1007-10111. The development of tensile strain and the saturation in active carrier is attributed to the presence of local complexes while their dispersal on annealing is attributed to strain reduction and increase in active carrier density. However, the existence of such local complexes is not proven and a fundamental void exists in understanding the structure-property correlation in Si:P films. In this respect, our work investigates the reason behind the evolution of strain and electrical properties in the as-grown and annealed Si:P epitaxial layers using ab-initio techniques and corroborate the results with physical characterization techniques. It will be shown that the strain developed in Si:P films is not due to any specific complexes while the formation of Phosphorus-vacancy complexes will be shown responsible for the carrier saturation and the increase in resistivity in the as-grown films. Interstitial/precipitate formation is suggested to be a reason for the strain loss in the annealed films. (C) The Author(s) 2018. Published by ECS.
Address
Corporate Author Thesis
Publisher Electrochemical society Place of Publication (down) Pennington (N.J.) Editor
Language Wos 000440834200010 Publication Date 2018-05-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769; 2162-8777 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 4 Open Access OpenAccess
Notes Approved Most recent IF: 1.787
Call Number UA @ lucian @ c:irua:153204 Serial 5122
Permanent link to this record
 
 
Author Neyts, E.C.; Bogaerts, A.
Title Modeling the growth of SWNTs and graphene on the atomic scale Type A1 Journal article
Year 2012 Publication ECS transactions Abbreviated Journal
Volume 45 Issue 4 Pages 73-78
Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The possibility of application of nanomaterials is determined by our ability to control the properties of the materials, which are ultimately determined by their structure and hence their growth processes. We employ hybrid molecular dynamics / Monte Carlo (MD/MC) simulations to explore the growth of SWNTs and graphene on nickel as a catalyst, with the specific goal of unraveling the growth mechanisms. While the general observations are in agreement with the literature, we find a number of interesting phenomena to be operative which are crucial for the growth, and which are not accessible by MD simulations alone due to the associated time scale. Specifically, we observe metal mediated healing and restructuring processes to take place, reorganizing the carbon network during the initial nucleation step. In the case of carbon nanotube growth, this leads to the growth of tubes with a determinable chirality. In the case of graphene formation, we find that graphene is only formed at temperatures above 700 K. These results are of importance for understanding the growth mechanisms of these carbon nanomaterials on the fundamental level.
Address
Corporate Author Thesis
Publisher Electrochemical Society Place of Publication (down) Pennington Editor
Language Wos 000316890000008 Publication Date 2012-04-27
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1938-6737;1938-5862; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:108535 Serial 2144
Permanent link to this record
 
 
Author Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A.
Title Theoretical study of silicene and germanene Type P1 Proceeding
Year 2013 Publication Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The structural and electronic properties of silicene and germanene on metallic and non-metallic substrates are investigated theoretically, using first-principles simulations. We first study the interaction of silicene with Ag(111) surfaces, focusing on the (4x4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), silicene is predicted to be semiconducting, with a computed energy gap of about 0.3 eV. However, the charge transfer occurring at the silicene/Ag(111) interface leads to an overall metallic system. We next investigate the interaction of silicene and germanene with hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (semiconducting) (0001) ZnS or ZnSe surfaces, silicene and germanene are found to be semiconducting. Remarkably, the nature (indirect or direct) and magnitude of their energy band gap can be controlled by an out-of-plane electric field.
Address
Corporate Author Thesis
Publisher Electrochemical soc inc Place of Publication (down) Pennington Editor
Language Wos 000354468000006 Publication Date 2013-05-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-60768-374-2; 978-1-62332-023-2 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 6 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:134451 Serial 4529
Permanent link to this record
 
 
Author Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N.
Title Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures Type P1 Proceeding
Year 2017 Publication Semiconductor Process Integration 10 Abbreviated Journal
Volume Issue Pages 241-252
Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.
Address
Corporate Author Thesis
Publisher Electrochemical soc inc Place of Publication (down) Pennington Editor
Language Wos 000426269800024 Publication Date 2017-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume 80 Series Issue 4 Edition
ISSN 978-1-60768-821-1; 978-1-62332-473-5 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:149965 Serial 4966
Permanent link to this record
 
 
Author Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N.
Title Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations Type P1 Proceeding
Year 2017 Publication Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar Abbreviated Journal
Volume Issue Pages 303-311
Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
Address
Corporate Author Thesis
Publisher Electrochemical soc inc Place of Publication (down) Pennington Editor
Language Wos 000426271800028 Publication Date 2017-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume 80 Series Issue 1 Edition
ISSN 978-1-62332-470-4; 978-1-60768-818-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access Not_Open_Access
Notes ; ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:149966 Serial 4976
Permanent link to this record
 
 
Author Shenderova, O.; Vargas, A.; Turner, S.; Ivanov, D.M.; Ivanov, M.G.
Title Nanodiamond-based nanolubricants : investigation of friction surfaces Type A1 Journal article
Year 2014 Publication Tribology transactions Abbreviated Journal Tribol T
Volume 57 Issue 6 Pages 1051-1057
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Synergistic compositions of detonation nanodiamond (DND) particles with polytetrafluoroethylene and molybdenum dialkyldithiophosphate were used in ring-on-ring, four-ball, and block-on-ring tests as an additive to polyalphaolefins and engine oils. Modest to significant reductions in the friction coefficients, wear, or both were observed. In the wear scars produced in the block-on-ring tests, the friction surfaces were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and profilometry. Significant polishing effects of the friction surfaces in lubricants containing DND were revealed in SEM observations and roughness measurements. The roughness of the scar surfaces produced in the presence of DND additives was about 35% lower than the roughness of the scars observed in pure oil experiments.
Address
Corporate Author Thesis
Publisher Place of Publication (down) Park Ridge, Ill. Editor
Language Wos 000345317900009 Publication Date 2014-06-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1040-2004;1547-397X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.685 Times cited 23 Open Access
Notes Approved Most recent IF: 1.685; 2014 IF: 1.349
Call Number UA @ lucian @ c:irua:122161 Serial 2252
Permanent link to this record
 
 
Author Vandelannoote, R.; Blommaert, W.; van Grieken, R.; Gijbels, R.
Title L'analyse des eaux géothermales par spectrométrie de masse à étincelles Type A3 Journal article
Year 1979 Publication Spectra 2000: la revue de l'instrumentation Abbreviated Journal
Volume 53 Issue Pages 66
Keywords A3 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0399-1172 ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:116645 Serial 98
Permanent link to this record
 
 
Author da Silva, A.L.C.; Candido, L.; Teixeira Rabelo, J.N.; Hai, G.-Q.; Peeters, F.M.
Title Anharmonic effects on thermodynamic properties of a graphene monolayer Type A1 Journal article
Year 2014 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 107 Issue 5 Pages 56004
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We extend the unsymmetrized self-consistent-field method (USF) for anharmonic crystals to layered non-Bravais crystals to investigate structural, dynamical and thermodynamic properties of a free-standing graphene monolayer. In this theory, the main anharmonicity of the crystal lattice has been included and the quantum corrections are taken into account in an h-expansion for the one-particle density matrix. The obtained result for the thermal expansion coefficient (TEC) of graphene shows a strong temperature dependence and agrees with experimental results by Bao et al. (Nat. Nanotechnol., 4 (2009) 562). The obtained value of TEC at room temperature (300 K) is -6.4 x 10(- 6) K- 1 and it becomes positive for T > T-alpha = 358K. We find that quantum effects are significant for T < 1000 K. The interatomic distance, effective amplitudes of the graphene lattice vibrations, adiabatic and isothermal bulk moduli, isobaric and isochoric heat capacities are also calculated and their temperature dependences are determined. Copyright (C) EPLA, 2014
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000341559900020 Publication Date 2014-09-05
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 23 Open Access
Notes ; This research was supported by the Brazilian agencies CNPq, FAPEG and FAPESP, the Flemish Science Foundation (FWO-Vl) and the Methusalem Foundation of the Flemish Government. ; Approved Most recent IF: 1.957; 2014 IF: 2.095
Call Number UA @ lucian @ c:irua:119289 Serial 118
Permanent link to this record
 
 
Author Elmurodov, A.K.; Vodolazov, D.Y.; Peeters, F.M.
Title The break-up of the vortex structure in a mesoscopic wire containing a constriction Type A1 Journal article
Year 2006 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 74 Issue 1 Pages 151-155
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000236197000023 Publication Date 2006-02-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 11 Open Access
Notes Approved Most recent IF: 1.957; 2006 IF: 2.229
Call Number UA @ lucian @ c:irua:57460 Serial 255
Permanent link to this record
 
 
Author Reijniers, J.; Matulis, A.; Chang, K.; Peeters, F.M.; Vasilopoulos, P.
Title Confined magnetic guiding orbit states Type A1 Journal article
Year 2002 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 59 Issue 5 Pages 749-753
Keywords A1 Journal article; Engineering Management (ENM); Condensed Matter Theory (CMT)
Abstract We show how snake-orbit states which run along a magnetic edge can be confined electrically. We consider a two-dimensional electron gas (2DEG) confined into a quantum wire, subjected to a strong perpendicular and steplike magnetic field B/ − B. Close to this magnetic step, new, spatially confined bound states arise as a result of the lateral confinement and the magnetic-field step. The number of states, with energy below the first Landau level, increases as B becomes stronger or as the wire width becomes larger. These bound states can be understood as an interference between two counter-propagating one-dimensional snake-orbit states.
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000177761700018 Publication Date 2003-12-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 26 Open Access
Notes Approved Most recent IF: 1.957; 2002 IF: 2.360
Call Number UA @ lucian @ c:irua:92387 Serial 483
Permanent link to this record
 
 
Author Connolly, M.R.; Milošević, M.V.; Bending, S.J.; Clem, J.R.; Tamegai, T.
Title Continuum vs. discrete flux behaviour in large mesoscopic Bi2Sr2CaCu2O8+\delta disks Type A1 Journal article
Year 2009 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 85 Issue 1 Pages 17008,1-17008,6
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Scanning Hall probe and local Hall magnetometry measurements have been used to investigate flux distributions in large mesoscopic superconducting disks with sizes that lie near the crossover between the bulk and mesoscopic vortex regimes. Results obtained by directly mapping the magnetic induction profiles of the disks at different applied fields can be quite successfully fitted to analytic models which assume a continuous distribution of flux in the sample. At low fields, however, we do observe clear signatures of the underlying discrete vortex structure and can resolve the characteristic mesoscopic compression of vortex clusters in increasing magnetic fields. Even at higher fields, where single-vortex resolution is lost, we are still able to track configurational changes in the vortex patterns, since competing vortex orders impose unmistakable signatures on “local” magnetisation curves as a function of the applied field. Our observations are in excellent agreement with molecular-dynamics numerical simulations which lead us to a natural definition of the lengthscale for the crossover between discrete and continuum behaviours in our system.
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000263692500029 Publication Date 2009-01-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 17 Open Access
Notes Approved Most recent IF: 1.957; 2009 IF: 2.893
Call Number UA @ lucian @ c:irua:76306 Serial 495
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Author Das, P.; Koblischka, M.R.; Turner, S.; Van Tendeloo, G.; Wolf, T.; Jirsa, M.; Hartmann, U.
Title Direct observation of nanometer-scale pinning sites in (Nd0.33Eu0.20Gd0.47)Ba2Cu3O7-\delta single crystals Type A1 Journal article
Year 2008 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 83 Issue 3 Pages 37005,1-37005,4
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report on the observation of self-organized stripe-like structures on the as-grown surface and in the bulk of (Nd,Eu,Gd)Ba2Cu3Oy single crystals. The periodicity of the stripes on the surface lies between 500800 nm. These are possibly the growth steps of the crystal. Transmission electron microscopy investigations revealed stripes of periodicity in the range of 2040 nm in the bulk. From electron back scattered diffraction investigations, no crystallographic misorientation due to the nanostripes has been found. Scanning tunneling spectroscopic experiments revealed nonsuperconducting regions, running along twin directions, which presumably constitute strong pinning sites.
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000259022600032 Publication Date 2008-07-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 5 Open Access
Notes Approved Most recent IF: 1.957; 2008 IF: 2.203
Call Number UA @ lucian @ c:irua:76496 Serial 719
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Author Samal, D.; Tan, H.; Takamura, Y.; Siemons, W.; Verbeeck, J.; Van Tendeloo, G.; Arenholz, E.; Jenkins, C.A.; Rijnders, G.; Koster, G.
Title Direct structural and spectroscopic investigation of ultrathin films of tetragonal CuO: Six-fold coordinated copper Type A1 Journal article
Year 2014 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 105 Issue 1 Pages 17003-17005
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Unlike other 3d transition metal monoxides (MnO, FeO, CoO, and NiO), CuO is found in a low-symmetry distorted monoclinic structure rather than the rocksalt structure. We report here of the growth of ultrathin CuO films on SrTiO3 substrates; scanning transmission electron microscopy was used to show the stabilization of a tetragonal rocksalt structure with an elongated c-axis such that c/a similar to 1.34 and the Cu-O-Cu bond angle similar to 180 degrees, pointing to metastable six-fold coordinated Cu. X-ray absorption spectroscopy demonstrates that the hole at the Cu site for the CuO is localized in 3d(x2-y2) orbital unlike the well-studied monoclinic CuO phase. The experimental confirmation of the tetragonal structure of CuO opens up new avenues to explore electronic and magnetic properties of six-fold coordinated Cu. Copyright (C) EPLA, 2014
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000331197100015 Publication Date 2014-01-30
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 15 Open Access
Notes This work was carried out with financial support from the AFOSR and EOARD projects (project No.: FA8655-10-1-3077) and also supported by funding from the European Research Council under the 7th Framework Program (FP7), ERC grant No. 246791 – COUNTATOMS, ERC Starting Grant 278510 VORTEX, Grant No. NMP3-LA-2010-246102 IFOX and an Integrated Infrastructure Initiative, reference No. 312483-ESTEEM2. The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. Advanced Light Source is supported by the Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy (DOE) under Contract No. DE-AC02-05CH11231. YT acknowledges support from the National Science Foundation (DMR-0747896). WS was supported by the US DOE, Basic Energy Sciences, Materials Sciences and Engineering Division. ECASJO_; Approved Most recent IF: 1.957; 2014 IF: 2.095
Call Number UA @ lucian @ c:irua:115806UA @ admin @ c:irua:115806 Serial 722
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Author Nelissen, K.; Partoens, B.; Peeters, F.M.
Title Dynamics of topological defects and the effects of the cooling rate on finite-size two-dimensional screened Coulomb clusters Type A1 Journal article
Year 2007 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 79 Issue 6 Pages 66001,1-5
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000250409500013 Publication Date 2007-08-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 9 Open Access
Notes Approved Most recent IF: 1.957; 2007 IF: 2.206
Call Number UA @ lucian @ c:irua:66690 Serial 785
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Author Schryvers, D.; Potapov, P.
Title Electron diffraction refinement of the TiNi(Fe) R-phase structure Type A1 Journal article
Year 2003 Publication Journal de physique Abbreviated Journal J Phys Iv
Volume 112 Issue Pages 751-754
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000186503400030 Publication Date 2008-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:48389 Serial 922
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Author Weill; Chevalier; Chambon; Tressaud; Darriet; Etourneau; Van Tendeloo, G.
Title Electron-microscopy investigation of superconducting la2cu(o, f)4+y oxyfluoride Type A1 Journal article
Year 1993 Publication European journal of solid state and inorganic chemistry Abbreviated Journal
Volume 30 Issue 11 Pages 1095-1108
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The fluorination of La2CuO4 can lead to different oxyfluoride compounds depending on the TF2 temperature of the fluorine gas treatment. When 150-degrees-C T(F2) less-than-or-equal-to 200-degrees-c less-than-or-equal-to 200-degrees-C a superconducting material is obtained. Previous neutron diffraction experiments as well as the EXAFS measurements at the La L(III) edge indicate that extra anions lie in an interstitial site between the two (LaO) layers. Electron diffraction patterns clearly show the existence of an incommensurate modulation due to the presence of shear planes. A second phase is also pointed out which can be obtained as a major component when the fluorination temperature is raised to 230-degrees-C. This phase which is not a superconductor crystallizes with the monoclinic symmetry.
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos A1993MX13500006 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0992-4361 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95476 Serial 954
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Author Weill, F.; Chevalier, B.; Chambon, M.; Tressaud, A.; Darriet, B.; Etourneau, J.; Van Tendeloo, G.
Title Electron microscopy investigation of superconducting La2Cu(O,F)4+y oxyfluoride Type A1 Journal article
Year 1993 Publication European journal of solid state and inorganic chemistry Abbreviated Journal
Volume 30 Issue Pages 1095-1108
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos A1993MX13500006 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0992-4361 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:7505 Serial 955
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Author Smondyrev, M.A.; Kochetov, E.A.; Verbist, G.; Peeters, F.M.; Devreese, J.T.
Title Equivalence of 3D bipolarons in a strong magnetic field to 1D bipolarons Type A1 Journal article
Year 1992 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 19 Issue 6 Pages 519-524
Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos A1992JG44300013 Publication Date 2007-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.095 Times cited 17 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:2911 Serial 1079
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Author Laffez, P.; Lebedev, O.I.; Ruello, P.; Desfeux, R.; Banerjee, G.; Capon, F.
Title Evidence of strain induced structural change in hetero-epitaxial NdNiO3 thin films with metal-insulator transition Type A1 Journal article
Year 2004 Publication European physical journal: applied physics Abbreviated Journal Eur Phys J-Appl Phys
Volume 25 Issue 1 Pages 25-31
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Neodymium nickelate thin films have been prepared on NdGaO3 substrates by RF magnetron sputtering and post-annealing treatment under oxygen pressure. Transport properties are found to depend strongly on film thickness. Thick films show transport properties close to bulk ceramics, while very thin films exhibit a large transition from metal to insulator which occurs over a wide temperature range with high resistivity. Structure and surface morphology of the films have been investigated by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). Thin films (approximate to17 nm) grow heteroepitaxially, while thicker films (approximate to73 nm) show a granular structure. The thinnest sample suggests a symmetry change induced by the epitaxial strain of the substrate. This paper discusses the relationship between microstructure and transport properties.
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000187286000003 Publication Date 2003-12-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1286-0042;1286-0050; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.684 Times cited 12 Open Access
Notes Approved Most recent IF: 0.684; 2004 IF: 0.745
Call Number UA @ lucian @ c:irua:103256 Serial 1096
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Author Milošević, M.V.; Peeters, F.M.
Title Field-enhanced critical parameters in magnetically nanostructured superconductors Type A1 Journal article
Year 2005 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 70 Issue 5 Pages 670-676
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000229819000016 Publication Date 2005-04-28
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 40 Open Access
Notes Approved Most recent IF: 1.957; 2005 IF: 2.237
Call Number UA @ lucian @ c:irua:57247 Serial 1191
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Author Leroux, C.; Badeche, T.; Nihoul, G.; Richard, O.; Van Tendeloo, G.
Title A homologous series Pb2n+1Nb2n-1O7n-1 studied by electron microscopy Type A1 Journal article
Year 1999 Publication European physical journal: applied physics Abbreviated Journal Eur Phys J-Appl Phys
Volume 7 Issue Pages 33-40
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000082211000005 Publication Date 2003-06-20
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1286-0042;1286-0050; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.684 Times cited 4 Open Access
Notes Approved Most recent IF: 0.684; 1999 IF: 0.208
Call Number UA @ lucian @ c:irua:29717 Serial 1488
Permanent link to this record
 
 
Author van Vaeck, L.; Gijbels, R.
Title Identification des substances inorganiques et organiques en surface des solides par la microsonde laser Type H3 Book chapter
Year 1992 Publication Abbreviated Journal
Volume Issue Pages 27-53
Keywords H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Eyrolles Place of Publication (down) Paris Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:4205 Serial 1546
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Author Nelissen, K.; Partoens, B.; Schweigert, I.; Peeters, F.M.
Title Induced order and re-entrant melting in classical two-dimensional binary clusters Type A1 Journal article
Year 2006 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett
Volume 74 Issue 6 Pages 1046-1052
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (down) Paris Editor
Language Wos 000238029600017 Publication Date 2006-05-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.957 Times cited 17 Open Access
Notes Approved Most recent IF: 1.957; 2006 IF: 2.229
Call Number UA @ lucian @ c:irua:59453 Serial 1602
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