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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. |
Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects |
2017 |
Physica status solidi : A : applications and materials science |
214 |
8 |
UA library record; WoS full record; WoS citing articles |
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Semkina, A.S.; Abakumov, M.A.; Abakumov, A.M.; Nukolova, N.V.; Chekhonin, V.P. |
Relationship between the Size of Magnetic Nanoparticles and Efficiency of MRT Imaging of Cerebral Glioma in Rats |
2016 |
Bulletin of experimental biology and medicine |
161 |
5 |
UA library record; WoS full record; WoS citing articles |
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Shen, Y.; Lebedev, O.I.; Turner, S.; Van Tendeloo, G.; Song, X.; Yu, X.; Wang, Q.; Chen, H.; Dayeh, S.A.; Wu, T. |
Size-Induced Switching of Nanowire Growth Direction: a New Approach Toward Kinked Nanostructures |
2016 |
Advanced functional materials |
26 |
2 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. |
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study |
2017 |
ACS applied materials and interfaces |
9 |
10 |
UA library record; WoS full record; WoS citing articles |
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Wang, W.; Kong, L.; Geng, J.; Wei, F.; Xia, G. |
Wall ablation of heated compound-materials into non-equilibrium discharge plasmas |
2017 |
Journal of physics: D: applied physics |
50 |
19 |
UA library record; WoS full record; WoS citing articles |
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Pardo, J.A.; Santiso, J.; Solis, C.; Garcia, G.; Figueras, A.; Rossell, M.D. |
Thickness-dependent transport properties of Sr4Fe6O13 epitaxial thin films |
2006 |
Solid state ionics |
177 |
|
UA library record; WoS full record; WoS citing articles |
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Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. |
Towards rapid nanoscale measurement of strain in III-nitride heterostructures |
2013 |
Applied Physics Letters |
103 |
6 |
UA library record; WoS full record; WoS citing articles |
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Woo, S.Y.; Gauquelin, N.; Nguyen, H.P.T.; Mi, Z.; Botton, G.A. |
Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy |
2015 |
Nanotechnology |
26 |
19 |
UA library record; WoS full record; WoS citing articles |
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de Backer, A.; De wael, A.; Gonnissen, J.; Martinez, G.T.; Béché, A.; MacArthur, K.E.; Jones, L.; Nellist, P.D.; Van Aert, S. |
Quantitative annular dark field scanning transmission electron microscopy for nanoparticle atom-counting : what are the limits? |
2015 |
Journal of physics : conference series |
644 |
|
UA library record |
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Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R. |
Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography |
2011 |
Applied physics letters |
99 |
26 |
UA library record; WoS full record; WoS citing articles |
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Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. |
The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography |
2011 |
Semiconductor science and technology |
26 |
|
UA library record; WoS full record; WoS citing articles |
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Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy |
2012 |
Applied Physics Letters |
100 |
|
UA library record; WoS full record; WoS citing articles |
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Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
2012 |
Applied Physics Letters |
112 |
14 |
UA library record; WoS full record; WoS citing articles |
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Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
2013 |
Applied physics letters |
103 |
53 |
UA library record; WoS full record; WoS citing articles |
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Grubova, I.Y.; Surmeneva, M.A.; Huygh, S.; Surmenev, R.A.; Neyts, E.C. |
Density functional theory study of interface interactions in hydroxyapatite/rutile composites for biomedical applications |
2017 |
The journal of physical chemistry: C : nanomaterials and interfaces |
121 |
5 |
UA library record; WoS full record; WoS citing articles |
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Vets, C.; Neyts, E.C. |
Stabilities of bimetallic nanoparticles for chirality-selective carbon nanotube growth and the effect of carbon interstitials |
2017 |
The journal of physical chemistry: C : nanomaterials and interfaces |
121 |
2 |
UA library record; WoS full record; WoS citing articles |
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Bal, K.M.; Cautereels, J.; Blockhuys, F. |
Structures and spectroscopic properties of sulfur-nitrogen-pnictogen chains : R2P-N=S=N-PR2 and R2P-N=S=N-AsR2 |
2017 |
Journal of molecular structure |
1132 |
|
UA library record; WoS full record |
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Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. |
Thickness dependence of the resistivity of platinum-group metal thin films |
2017 |
Journal of applied physics |
122 |
42 |
UA library record; WoS full record; WoS citing articles |
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Wang, H.; Wang, W.; Yan, J.D.; Qi, H.; Geng, J.; Wu, Y. |
Thermodynamic properties and transport coefficients of a two-temperature polytetrafluoroethylene vapor plasma for ablation-controlled discharge applications |
2017 |
Journal of physics: D: applied physics |
50 |
3 |
UA library record; WoS full record; WoS citing articles |
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Klinkhammer, C.; Verlackt, C.; Smilowicz, D.; Kogelheide, F.; Bogaerts, A.; Metzler-Nolte, N.; Stapelmann, K.; Havenith, M.; Lackmann, J.-W. |
Elucidation of plasma-induced chemical modifications on glutathione and glutathione disulphide |
2017 |
Scientific reports |
7 |
17 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. |
Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study |
2017 |
Physical review applied |
8 |
6 |
UA library record; WoS full record; WoS citing articles |
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Torfs, E.; Vajs, J.; Bidart de Macedo, M.; Cools, F.; Vanhoutte, B.; Gorbanev, Y.; Bogaerts, A.; Verschaeve, L.; Caljon, G.; Maes, L.; Delputte, P.; Cos, P.; Komrlj, J.; Cappoen, D. |
Synthesis and in vitro investigation of halogenated 1,3-bis(4-nitrophenyl)triazenide salts as antitubercular compounds |
2017 |
Chemical biology and drug design |
|
5 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. |
Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories |
2017 |
Journal of computational electronics |
16 |
2 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
Structural characterization of SnS crystals formed by chemical vapour deposition |
2017 |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
268 |
2 |
UA library record; WoS full record; WoS citing articles |
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Neyts, E.C. |
Atomistic simulations of plasma catalytic processes |
2018 |
Frontiers of Chemical Science and Engineering |
12 |
5 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
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Radi, A.; Khalil-Allafi, J.; Etminanfar, M.R.; Pourbabak, S.; Schryvers, D.; Amin-Ahmadi, B. |
Influence of stress aging process on variants of nano-N4Ti3precipitates and martensitic transformation temperatures in NiTi shape memory alloy |
2018 |
Materials & design |
262 |
|
UA library record; ; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors |
2018 |
Physical review B |
97 |
2 |
UA library record; WoS full record; WoS citing articles |
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Nematollahi, P.; Neyts, E.C. |
A comparative DFT study on CO oxidation reaction over Si-doped BC2N nanosheet and nanotube |
2018 |
Applied surface science |
439 |
8 |
UA library record; WoS full record; WoS citing articles |
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