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Reply to “Comment on 'Vortices induced in a superconducting loop by asymmetric kinetic inductance and their detection in transport measurements' ””. Berdiyorov GR, Milošević, MV, Peeters FM, Physical review : B : condensed matter and materials physics 90, 056502 (2014). http://doi.org/10.1103/PhysRevB.90.056502
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Comment on “Creating in-plane pseudomagnetic fields in excess of 1000 T by misoriented stacking in a graphene bilayer””. Van der Donck M, Peeters FM, Van Duppen B, Physical review B 93, 247401 (2016). http://doi.org/10.1103/PhysRevB.93.247401
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Comment on “Impurity spectra of graphene under electric and magnetic fields””. Van Pottelberge R, Zarenia M, Peeters FM, Physical review B 97, 207403 (2018). http://doi.org/10.1103/PHYSREVB.97.207403
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Comment on “Electron states for gapped pseudospin-1 fermions in the field of a charged impurity””. Van Pottelberge R, Physical Review B 101, 197102 (2020). http://doi.org/10.1103/PHYSREVB.101.197102
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Reply to “Comment on `Excitons, trions, and biexcitons in transition-metal dichalcogenides: Magnetic-field dependence'””. Van der Donck M, Zarenia M, Peeters FM, Physical Review B 101, 127402 (2020). http://doi.org/10.1103/PHYSREVB.101.127402
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Electroluminescence spectra of an STM-tip-induced quantum dot”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physical review : B : condensed matter and materials physics 68, 195307 (2003). http://doi.org/10.1103/PhysRevB.68.195307
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Electric-field-driven Mott metal-insulator transition in correlated thin films : an inhomogeneous dynamical mean-field theory approach”. Bakalov P, Esfahani DN, Covaci L, Peeters FM, Tempere J, Locquet J-P, Physical review : B : condensed matter and materials physics 93, 165112 (2016). http://doi.org/10.1103/PhysRevB.93.165112
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Pattern formation in vortex matter with pinning and frustrated intervortex interactions”. Zhao HJ, Misko VR, Tempere J, Nori F, Physical review B 95, 104519 (2017). http://doi.org/10.1103/PHYSREVB.95.104519
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Josephson effect as a signature of electron-hole superfluidity in bilayers of van der Waals heterostructures”. Pascucci F, Conti S, Neilson D, Tempère J, Perali A, Physical review B 106, L220503 (2022). http://doi.org/10.1103/PHYSREVB.106.DO20503
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Low-strain Si/O superlattices with tunable electronic properties : ab initio calculations”. Nishio K, Lu AKA, Pourtois G, Physical review : B : condensed matter and materials physics 91, 165303 (2015). http://doi.org/10.1103/PhysRevB.91.165303
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Oxidation of the GaAs(001) surface : insights from first-principles calculations”. Scarrozza M, Pourtois G, Houssa M, Heyns M, Stesmans A, Physical review : B : condensed matter and materials physics 85, 195307 (2012). http://doi.org/10.1103/PhysRevB.85.195307
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Uniform-acceptance force-bias Monte Carlo method with time scale to study solid-state diffusion”. Mees MJ, Pourtois G, Neyts EC, Thijsse BJ, Stesmans A, Physical review : B : condensed matter and materials physics 85, 134301 (2012). http://doi.org/10.1103/PhysRevB.85.134301
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Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta vertical bar CoFe vertical bar MgO magnetic tunnel junctions : a first-principles study”. Sankaran K, Swerts J, Couet S, Stokbro K, Pourtois G, Physical review B 94, 094424 (2016). http://doi.org/10.1103/PHYSREVB.94.094424
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Calculation of binary and ternary metallic immiscible clusters with icosahedral structures”. Dzhurakhalov AA, Atanasov I, Hou M, Physical review : B : condensed matter and materials physics , 115415 (2008). http://doi.org/10.1103/PHYSREVB.77.115415
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Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors”. de de Meux AJ, Pourtois G, Genoe J, Heremans P, Physical review B 97, 045208 (2018). http://doi.org/10.1103/PHYSREVB.97.045208
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Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots”. Nistor SV, Stefan M, Nistor LC, Goovaerts E, Van Tendeloo G, Physical review : B : condensed matter and materials physics 81, 035336 (2010). http://doi.org/10.1103/PhysRevB.81.035336
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Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots”. Janssen G, Goovaerts E, Bouwen A, Partoens B, van Daele B, Zurauskiene N, Koenraad PM, Wolter JH, Physical review : B : condensed matter and materials physics 68, 045329 (2003). http://doi.org/10.1103/PhysRevB.68.045329
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Electronic structure, screening and charging effects at a metal/organic tunneling junction: a first principles study”. Lamoen D, Ballone P, Parrinello M, Physical review B 54, 5097 (1996)
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First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, Physical Review B 72, 1 (2005). http://doi.org/10.1103/PhysRevB.72.085326
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High pressure limiting forms of the zero-temperature equations of state of Ta and Pu from relativistic Thomas-Fermi theory”. Leys FE, March NH, Lamoen D, Physical Review B 67, 064109 (2003). http://doi.org/10.1103/PhysRevB.67.064109
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Self consistent nonlocal linear-response theory of a relativistic electron gas”. Leys FE, March NH, Angilella GGN, Lamoen D, Physical Review B 67, 113105 (2003). http://doi.org/10.1103/PhysRevB.67.113105
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Strong enhancement of superconductivity in a nanosized Pb bridge”. Misko VR, Fomin VM, Devreese JT, Physical Review B 64, 014517 (2001). http://doi.org/10.1103/PhysRevB.64.014517
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Superconducting mesoscopic square loop”. Fomin VM, Misko VR, Devreese JT, Moshchalkov VV, Physical Review B 58, 11703 (1998). http://doi.org/10.1103/PhysRevB.58.11703
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Model-based determination of dielectric function by STEM low-loss EELS”. Zhang L, Turner S, Brosens F, Verbeeck J, Physical review : B : condensed matter and materials physics 81, 035102 (2010). http://doi.org/10.1103/PhysRevB.81.035102
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Attracting shallow donors : hydrogen passivation in (Al,Ga,In)-doped ZnO”. Matsubara M, Amini MN, Saniz R, Lamoen D, Partoens B, Physical review : B : condensed matter and materials physics 86, 165207 (2012). http://doi.org/10.1103/PhysRevB.86.165207
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Effect of Bi bilayers on the topological states of Bi2Se3 : a first-principles study”. Govaerts K, Park K, De Beule C, Partoens B, Lamoen D, Physical review : B : condensed matter and materials physics 90, 155124 (2014). http://doi.org/10.1103/PhysRevB.90.155124
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Erratum : First-principles study of possible shallow donors in ZnAl2O4 spinel [Phys. Rev. B 87, 174101 (2013)]”. Dixit H, Tandon N, Cottenier S, Saniz R, Lamoen D, Partoens B, Physical review : B : condensed matter and materials physics 88, 059905 (2013). http://doi.org/10.1103/PhysRevB.88.059905
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First-principles study of possible shallow donors in ZnAl2O4 spinel”. Dixit H, Tandon N, Cottenier S, Saniz R, Lamoen D, Partoens B, Physical review : B : condensed matter and materials physics 87, 174101 (2013). http://doi.org/10.1103/PhysRevB.87.174101
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Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems : ab initio study”. Govaerts K, Sluiter MHF, Partoens B, Lamoen D, Physical review : B : condensed matter and materials physics 89, 054106 (2014). http://doi.org/10.1103/PhysRevB.89.054106
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Influence of Al concentration on the optoelectronic properties of Al-doped MgO”. Sarmadian N, Saniz R, Lamoen D, Partoens B, Physical review : B : condensed matter and materials physics 86, 205129 (2012). http://doi.org/10.1103/PhysRevB.86.205129
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