|
Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
|
Beckers, A.; Thewissen, M.; Sorée, B. |
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors |
2018 |
Journal of applied physics |
124 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated platinum diselenide : the impact of platinum vacancies |
2021 |
Materials |
14 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Moors, K.; Sorée, B.; Magnus, W. |
Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering |
2017 |
Microelectronic engineering |
167 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
2014 |
Journal of applied physics |
115 |
34 |
UA library record; WoS full record; WoS citing articles |
|
|
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
2013 |
Journal of applied physics |
113 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
Devolder, T.; Bultynck, O.; Bouquin, P.; Nguyen, V.D.; Rao, S.; Wan, D.; Sorée, B.; Radu, I.P.; Kar, G.S.; Couet, S. |
Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions |
2020 |
Physical Review B |
102 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
|
|
Duflou, R.; Ciubotaru, F.; Vaysset, A.; Heyns, M.; Sorée, B.; Radu, I.P.; Adelmann, C. |
Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides |
2017 |
Applied physics letters |
111 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
|
|
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
|
|
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects |
2019 |
2D materials |
6 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
Moors, K.; Contino, A.; Van de Put, M.L.; Vandenberghe, W.G.; Fischetti, M., V; Magnus, W.; Sorée, B. |
Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness |
2019 |
Physical review materials |
3 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Magnetic properties and critical behavior of magnetically intercalated WSe₂ : a theoretical study |
2021 |
2d Materials |
8 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
Lauwens, J.; Kerkhofs, L.; Sala, A.; Sorée, B. |
Superconductor-semiconductor hybrid capacitance with a nonlinear charge-voltage profile |
2024 |
Journal of physics: D: applied physics |
57 |
|
UA library record; WoS full record |
|
|
Vermeulen, B.B.; Raymenants, E.; Pham, V.T.; Pizzini, S.; Sorée, B.; Wostyn, K.; Couet, S.; Nguyen, V.D.; Temst, K. |
Towards fully electrically controlled domain-wall logic |
2024 |
AIP advances |
14 |
|
UA library record; WoS full record |
|
|
Vermeulen, B.B.; Monteiro, M.G.; Giuliano, D.; Sorée, B.; Couet, S.; Temst, K.; Nguyen, V.D. |
Magnetization-switching dynamics driven by chiral coupling |
2024 |
Physical review applied |
21 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. |
Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions |
2018 |
Journal of applied physics |
124 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
2010 |
Applied Physics Letters |
96 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
Sethu, K.K.V.; Yasin, F.; Swerts, J.; Sorée, B.; De Boeck, J.; Kar, G.S.; Garello, K.; Couet, S. |
Spin-orbit torque vector quantification in nanoscale magnetic tunnel junctions |
2024 |
ACS nano |
18 |
|
UA library record; WoS full record |
|
|
Sorée, B.; Magnus, W.; Vandenberghe, W. |
Low-field mobility in ultrathin silicon nanowire junctionless transistors |
2011 |
Applied physics letters |
99 |
20 |
UA library record; WoS full record; WoS citing articles |
|
|
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic |
2014 |
Applied physics letters |
105 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
Vanherck, J.; Sorée, B.; Magnus, W. |
Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields |
2018 |
Journal of physics : condensed matter |
30 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Moors, K.; Sorée, B.; Magnus, W. |
Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires |
2016 |
Journal of physics : condensed matter |
28 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
|
|
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
De Clercq, M.; Moors, K.; Sankaran, K.; Pourtois, G.; Dutta, S.; Adelmann, C.; Magnus, W.; Sorée, B. |
Resistivity scaling model for metals with conduction band anisotropy |
2018 |
Physical review materials |
2 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Magnus, W.; Brosens, F.; Sorée, B. |
Modeling drive currents and leakage currents : a dynamic approach |
2009 |
Journal of computational electronics |
8 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Uniform strain in heterostructure tunnel field-effect transistors |
2016 |
IEEE electron device letters |
37 |
17 |
UA library record; WoS full record; WoS citing articles |
|