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Records |
Links |
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Author |
Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J. |
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Title |
TEM study on precipitation behavior in Cu-Co alloys |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
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Volume |
168 |
Issue |
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Pages |
27-35 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
000075226500005 |
Publication Date |
2002-09-10 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-8965;1521-396X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
18 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29677 |
Serial |
3494 |
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Permanent link to this record |
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Author |
de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
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Title |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
The review of scientific instruments |
Abbreviated Journal |
Rev Sci Instrum |
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Volume |
70 |
Issue |
9 |
Pages |
3661-3663 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
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Corporate Author |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000082289200026 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0034-6748; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.515 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.515; 1999 IF: 1.293 |
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Call Number |
UA @ lucian @ c:irua:103487 |
Serial |
48 |
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Permanent link to this record |
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Author |
Amelinckx, S.; Bernaerts, D.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
A structure model and growth mechanism for multishell carbon nanotubes |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Science |
Abbreviated Journal |
Science |
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Volume |
267 |
Issue |
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Pages |
1334-1338 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
A1995QK06800041 |
Publication Date |
2006-10-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0036-8075;1095-9203; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
33.611 |
Times cited |
169 |
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:13309 |
Serial |
3305 |
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Permanent link to this record |
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Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R. |
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Title |
Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Surface science : a journal devoted to the physics and chemistry of interfaces |
Abbreviated Journal |
Surf Sci |
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Volume |
337 |
Issue |
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Pages |
153-165 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1995RQ74900024 |
Publication Date |
2003-05-13 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0039-6028; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.925 |
Times cited |
10 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13162 |
Serial |
1836 |
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Permanent link to this record |
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Author |
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
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Title |
Defects in high-dose oxygen implanted silicon : a TEM study |
Type |
A1 Journal article |
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Year |
1991 |
Publication |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
Abbreviated Journal |
Vacuum |
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Volume |
42 |
Issue |
5-6 |
Pages |
367-369 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
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Address |
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Corporate Author |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
A1991EV61700007 |
Publication Date |
2002-10-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0042-207X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.858 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
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Call Number |
UA @ lucian @ c:irua:104022 |
Serial |
629 |
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Permanent link to this record |
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Author |
Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy |
Type |
A3 Journal article |
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Year |
1992 |
Publication |
Dentistry in Japan |
Abbreviated Journal |
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Volume |
29 |
Issue |
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Pages |
91-102 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Tokyo |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0070-3737 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:4105 |
Serial |
313 |
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Permanent link to this record |
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Author |
Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
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Title |
Graphene textures: tubules and whiskers related to fullerene crystallography |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Acta crystallographica: section A: foundations of crystallography |
Abbreviated Journal |
Acta Crystallogr A |
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Volume |
49 |
Issue |
|
Pages |
355 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Copenhagen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
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ISSN |
0108-7673 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
2.307 |
Times cited |
|
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:6842 |
Serial |
1378 |
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Permanent link to this record |
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Author |
Krekels, T.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J. |
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Title |
Structural effects of element substitution in the CuO plane of the 1-2-3 YBCO superconductor |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Acta crystallographica: section A: foundations of crystallography |
Abbreviated Journal |
Acta Crystallogr A |
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Volume |
49 |
Issue |
|
Pages |
287 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Copenhagen |
Editor |
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Language |
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Wos |
A1993KR35400006 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
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ISSN |
0108-7673 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.307 |
Times cited |
56 |
Open Access |
|
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:6840 |
Serial |
3233 |
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Permanent link to this record |
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Author |
Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
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Title |
Superlattice variants in Sr2CuO2(CO3): an electron microscopy study |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Acta crystallographica: section A: foundations of crystallography |
Abbreviated Journal |
Acta Crystallogr A |
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Volume |
49 |
Issue |
|
Pages |
357 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Copenhagen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0108-7673 |
ISBN |
|
Additional Links |
UA library record |
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Impact Factor |
2.307 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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|
Call Number |
UA @ lucian @ c:irua:6841 |
Serial |
3379 |
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Permanent link to this record |
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Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
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Title |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
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Volume |
77 |
Issue |
2 |
Pages |
423-435 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000071976400010 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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|
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
23 |
Open Access |
|
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|
Notes |
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Approved |
Most recent IF: NA |
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|
Call Number |
UA @ lucian @ c:irua:29671 |
Serial |
2440 |
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Permanent link to this record |
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Author |
Zhang, Z.; Geng, W.; van Landuyt, J.; Van Tendeloo, G. |
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Title |
A transmission electron microscopy study of tweed-like structures in Al62Cu17.5CO17.5Si3 decagonal quasicrystals |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
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|
Volume |
71 |
Issue |
5 |
Pages |
1177-1189 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1995QW79500016 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
7 |
Open Access |
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Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:13296 |
Serial |
3721 |
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Permanent link to this record |
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Author |
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
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Title |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
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|
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Volume |
74 |
Issue |
3 |
Pages |
723-740 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1996VG17300010 |
Publication Date |
2007-07-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
20 |
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
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Call Number |
UA @ lucian @ c:irua:15456 |
Serial |
359 |
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Permanent link to this record |
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Author |
Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.; Ivanov, V.; Nagy, J.B. |
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Title |
Electron microscopy study of coiled carbon tubules |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
|
|
|
Volume |
71 |
Issue |
3 |
Pages |
605-630 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
|
Wos |
A1995QQ40400009 |
Publication Date |
2007-07-08 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
|
Times cited |
72 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:13290 |
Serial |
969 |
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Permanent link to this record |
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Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
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Title |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
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|
|
Volume |
67 |
Issue |
3 |
Pages |
745-756 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1993 |
Publication Date |
2007-07-08 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
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ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
1 |
Open Access |
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Notes |
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Approved |
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|
Call Number |
UA @ lucian @ c:irua:6783 |
Serial |
2808 |
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Permanent link to this record |
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Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
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Title |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
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Volume |
61 |
Issue |
15 |
Pages |
10336-10345 |
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|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
|
Editor |
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|
Language |
|
Wos |
000086606200082 |
Publication Date |
2002-07-27 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0163-1829;1095-3795; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.836 |
Times cited |
27 |
Open Access |
|
|
|
Notes |
Conference Name: Microsc. Semicond. Mater. Conf. |
Approved |
Most recent IF: 3.836; 2000 IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:103456 |
Serial |
1577 |
|
Permanent link to this record |
|
|
|
|
Author |
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
|
|
Title |
Ion beam synthesis of β-SiC at 9500C and structural characterization |
Type |
A3 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research |
Abbreviated Journal |
|
|
|
Volume |
B112 |
Issue |
|
Pages |
325-329 |
|
|
Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0167-5087 |
ISBN |
|
Additional Links |
UA library record |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15454 |
Serial |
1740 |
|
Permanent link to this record |
|
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|
|
Author |
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
|
|
Title |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
Microelectron Eng |
|
|
Volume |
45 |
Issue |
2-3 |
Pages |
277-282 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
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|
Language |
|
Wos |
000081748600023 |
Publication Date |
2002-07-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0167-9317; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
1.806 |
Times cited |
|
Open Access |
|
|
|
Notes |
Fwo-G.0051.97; Fwo-G.00117.86 |
Approved |
Most recent IF: 1.806; 1999 IF: 0.815 |
|
|
Call Number |
UA @ lucian @ c:irua:95791 |
Serial |
47 |
|
Permanent link to this record |
|
|
|
|
Author |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
|
|
Title |
Defect characterization in high temperature implanted 6H-SiC using TEM |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Nuclear instruments and methods in physics research: B |
Abbreviated Journal |
Nucl Instrum Meth B |
|
|
Volume |
127/128 |
Issue |
|
Pages |
347-349 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Wos |
A1997XG60500078 |
Publication Date |
2002-07-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.109 |
Times cited |
17 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.109; 1997 IF: 1.016 |
|
|
Call Number |
UA @ lucian @ c:irua:21411 |
Serial |
613 |
|
Permanent link to this record |
|
|
|
|
Author |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
|
|
Title |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
Nucl Instrum Meth B |
|
|
Volume |
120 |
Issue |
1-4 |
Pages |
186-189 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
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Language |
|
Wos |
A1996VZ24500040 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.124 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95882 |
Serial |
947 |
|
Permanent link to this record |
|
|
|
|
Author |
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
|
|
Title |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
Abbreviated Journal |
Nucl Instrum Meth B |
|
|
Volume |
112 |
Issue |
1-4 |
Pages |
325-329 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix. |
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Address |
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Corporate Author |
|
Thesis |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
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|
Language |
|
Wos |
A1996UW20100069 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.124 |
Times cited |
9 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95886 |
Serial |
1742 |
|
Permanent link to this record |
|
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|
Author |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
|
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Title |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research |
Abbreviated Journal |
Nucl Instrum Meth B |
|
|
Volume |
B112 |
Issue |
|
Pages |
133-138 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
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Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
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|
Language |
|
Wos |
A1996UW20100029 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.124 |
Times cited |
4 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15453 |
Serial |
2423 |
|
Permanent link to this record |
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|
Author |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
|
|
Title |
Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Applied surface science |
Abbreviated Journal |
Appl Surf Sci |
|
|
Volume |
102 |
Issue |
|
Pages |
163-168 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
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|
Address |
|
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|
Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
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|
Language |
|
Wos |
A1996VJ86100037 |
Publication Date |
2003-05-12 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.711 |
Times cited |
9 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15458 |
Serial |
953 |
|
Permanent link to this record |
|
|
|
|
Author |
Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J. |
|
|
Title |
High crystalline quality erbium silicide films on (100) silicon grown in high vacuum |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Applied surface science |
Abbreviated Journal |
Appl Surf Sci |
|
|
Volume |
102 |
Issue |
|
Pages |
151-155 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1996VJ86100034 |
Publication Date |
2003-05-12 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.711 |
Times cited |
14 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15459 |
Serial |
1423 |
|
Permanent link to this record |
|
|
|
|
Author |
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. |
|
|
Title |
Photoelectric and electrical responses of several erbium silicide/silicon interfaces |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Applied surface science
T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE |
Abbreviated Journal |
Appl Surf Sci |
|
|
Volume |
102 |
Issue |
|
Pages |
173-177 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si. |
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Address |
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Corporate Author |
|
Thesis |
|
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|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1996VJ86100039 |
Publication Date |
2003-05-12 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.711 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:104392 |
Serial |
2611 |
|
Permanent link to this record |
|
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|
|
Author |
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
|
|
Title |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
Abbreviated Journal |
Appl Surf Sci |
|
|
Volume |
63 |
Issue |
1-4 |
Pages |
45-51 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE. |
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|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1993KF03400009 |
Publication Date |
2002-10-16 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.711 |
Times cited |
13 |
Open Access |
|
|
|
Notes |
|
Approved |
|
|
|
Call Number |
UA @ lucian @ c:irua:104539 |
Serial |
2932 |
|
Permanent link to this record |
|
|
|
|
Author |
Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
|
|
Title |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Crystal research and technology |
Abbreviated Journal |
Cryst Res Technol |
|
|
Volume |
28 |
Issue |
8 |
Pages |
1051-1061 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported. |
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Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
|
Language |
|
Wos |
A1993MN86700003 |
Publication Date |
2007-01-13 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0232-1300;1521-4079; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.935 |
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:6788 |
Serial |
952 |
|
Permanent link to this record |
|
|
|
|
Author |
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
|
|
Title |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
Abbreviated Journal |
Mater Sci Forum |
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Volume |
338-3 |
Issue |
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Pages |
309-312 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. |
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Publisher |
Trans tech publications ltd |
Place of Publication |
Zurich-uetikon |
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Wos |
000165996700075 |
Publication Date |
0000-00-00 |
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Edition |
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ISSN |
0255-5476 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
2 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:104262 |
Serial |
1071 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
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Title |
Crystallography of fullerites and related graphene textures |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
150/151 |
Issue |
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Pages |
53-64 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Place of Publication |
Lausanne |
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Wos |
A1994BC12F00004 |
Publication Date |
0000-00-00 |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10001 |
Serial |
590 |
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Permanent link to this record |
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Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
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Title |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
239-241 |
Issue |
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Pages |
671-674 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1997BH33W00145 |
Publication Date |
0000-00-00 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:21404 |
Serial |
1460 |
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Permanent link to this record |
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Author |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. |
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Title |
Structural studies of nanocrystalline diamond thin films |
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A1 Journal article |
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Year |
1997 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
239-241 |
Issue |
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Pages |
115-118 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1997BH33W00026 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:21403 |
Serial |
3260 |
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Permanent link to this record |